Silicon carbide has excellent mechanical strength, thermal stability and chemical inertness, and avoids several of the problems inherent in the performance of commercial supports, such as alumina, silicon oxide and carbon-based materials [1]. SiC supported catalyst exhibit high performance in automotive exhaust treatment, selective isomerization of paraffinic hydrocarbons, and H2S removal by direct oxidation into elemental sulfur [1]. SiC is also a wide band gap semiconductor for high temperature, high frequency and high voltage power application and optical sensors in the ultraviolet region [2]. These unique properties of SiC are of great interest to material scientists. Several routes have been used to synthesize SiC, for instance, carbothermal reduction of silica [3], sol–gel process [4, 5], decomposition of organic silicon compounds [6], chemical vapor deposition [7], and direct combustion synthesis [8]. Pure SiC was obtained by removal of the impurities through calcination to burn away residual carbon and acid treatment to remove SiO2 and/or catalyst [5, 7]. In the above-mentioned studies, many efforts have been done on the synthesis of high surface area SiC. For instance, SiC, synthesized with activated carbon granulates loaded with small amounts of nickel through fluidized bed chemical vapor deposition, exhibits surface areas ranging between 25 and 80 m2/g [9]. SiC synthesized by SiO vapors and activated charcoal reaches a surface area of 50 m2/g by a reaction at 1200 ◦C for 15 hr and a high (Si + SiO2)/C weight ratio [10]. Recently, porous SiC has been synthesized with a surface area from 112 to 120 m2/g by a modified sol– gel method [5], chemical vapor infiltration and a carbothermal reduction process [3]. In the latter process, MCM-48 silica was filled with pyrolytic carbon using propylene as carbon precursor and treated up to 1250– 1450 ◦C in inert atmosphere leading to the formation of SiC [3].