Radiation Resistance Research Articles

Enhancing strength and ductility of Nb alloy via Y addition by vacuum electromagnetic levitation melting under oxygen carrier route

Niobium (Nb) is considered as candidate material for heat pipe in space nuclear reactors due to high melting point, low density, excellent compatibility with alkali liquid metals, irradiation resistance, workability and welding performance, but low strength restricts it's engineering application. In this work, yttrium (Y) was introduced into Nb matrix to achieve solution strengthening from Y atoms and dispersion strengthening from yttrium oxides. The latter one was realized by oxygen carrier route and vacuum electromagnetic levitation melting technique. Finally, one Nb521 (Nb-5.0 wt%W-1.7 wt%Mo-1.0 wt%Zr-0.07 wt%C) and four kinds of Nb521-xY (x = 0.1, 0.2 0.3 and 0.4 wt%) alloys were prepared. TEM characterization indicated that 80 nm Y2O3 particles were formed in Nb521-0.1Y, which exhibited the highest yield strength of 673 MPa, ultimate tensile strength of 740 MPa as well as larger elongation of 12.8%. Moreover, the solution strengthening of Y atoms and Orowan strengthening of yttrium oxides were evaluated quantitatively.

A simulation study of irradiation effect on InAs/GaAsSb type II quantum dot structures

Particles in space cause irradiation damage to the solar cells (SCs), resulting in the degradation of their performance. Quantum dot solar cells (QDSCs) have higher theoretical efficiency and better irradiation resistance than the conventional GaAs SCs, which makes them highly promising for application in space. In this paper, we study the proton irradiation effect on InAs/GaAs0.8Sb0.2 QDSCs by SRIM program. The simulation result shows that the InAs/GaAs0.8Sb0.2 QDSCs have fewer vacancies than GaAs SCs when irradiated with low-energy proton, which indicates that the InAs/GaAs0.8Sb0.2 QDSCs have better anti-irradiation characteristics. The study about displacements per atom and proton concentration in two SCs shows that protons with low energy and high irradiation fluences will cause more serious damage in InAs/GaAs0.8Sb0.2 QDSCs. In addition, the proton incident angle affects the vacancy distribution, while the number of QD layers has little effect on it.

Atomistic Insights into the Irradiation Resistance of Co-Free High Entropy Alloy FeMnNiCr

Atomistic Insights into the Irradiation Resistance of Co-Free High Entropy Alloy FeMnNiCr

Enlargement of effective area in Schottky barrier diodes on heteroepitaxial (001) diamond substrates by defect reduction and their radiation tolerance

A major obstacle to realizing diamond electronics is the presence of device-killing defects. Characteristics of diamond-based diodes are degraded with increasing contact size, and a large Ohmic-like leakage current can be generated. Here, we introduced a buffer layer to suppress the killer defects, which extended from the substrate to the epitaxial layer. With the utilization of the buffer layer created using the metal-assisted termination (MAT) technique, Schottky barrier diodes (SBDs) with diametric sizes of Schottky contact ranging from 65 to 1000 μm were fabricated on heteroepitaxial-grown diamond (001) substrates. The SBDs exhibited an explicit rectifying behavior with a rectification ratio of >1010 even with 1000 μm circular contact (7.85 × 10−3 cm2). Satisfying diode parameters were obtained with an ideality factor of 1.52, a Schottky barrier height of 1.66 eV, and a picoampere of leakage current at a reverse bias of 10 V. Interestingly, the diode parameters of the diamond-based SBDs such as ideality factor, Schottky barrier height and rectifying ratio were likely not changed or degraded even after absorption to 1 MGy in the dose of white X-ray. Overall, this demonstration indicates a promising way to realize a large active area of diamond electronics that is applicable to high-output power transmission devices and detector applications.

Impact of proton radiation on Zr-doped HfO2-based ferroelectric memory

HfO2-based ferroelectric random access memory (FeRAM) has attracted tremendous attention in the field of data storage. However, the radiation performance and tolerance of FeRAM have not been investigated comprehensively. In this work, the electrical and structural properties of the W/TiN/Zr-doped HfO2(HZO)/TiN ferroelectric memory after radiation by 5 MeV proton at room temperature (RT) and low temperature (LT) were studied. After performing electrical and piezoresponse force microscopy (PFM) characterization, it was demonstrated that the radiation effect of HZO MFM ferroelectric memory strongly depends on the radiation temperature. The dielectric constant (Ɛr) and the remanent polarization (2Pr) values of the capacitor first decreased and then increased with the increasing of fluence at RT. Once the HZO thin film was radiated by protons at extremely low temperature, the performance of the HZO memory would be completely degraded. The increased ferroelectric properties due to RT radiation will be partially weakened after annealing at room temperature. The ferroelectric properties of the samples radiated by LT proton radiation would be restored due to the domain unpinning effect.

On how Doping with Atoms of Gadolinium and Scandium affects the Surface Structure of Silicon

The experimental team has developed a technology of step-by-step low-temperature diffusion doping of gadolinium and scandium into silicon that allows the clusters of impurity atoms to be uniformly distributed throughout the entire bulk of the silicon material. It was shown that, unlike the samples obtained under the high-temperature diffusion doping technology, in the samples obtained under the novel technology the team had detected any surface erosion or formation of alloys and silicide in the near-surface region. The authors have revealed increased thermostability and radiation resistance of silicon samples dotted with clusters of impurity atoms of gadolinium and scandium. The authors have conducted comprehensive studies by using the techniques of tagged atoms, autoradiography, measurement of conductivity and Hall effect, isothermal relaxation of capacitance and current of diffusion, solubility, and electrophysical properties of scandium in silicon under various doping conditions and for a wide temperature range (1100 ÷ 1250 0С). Diffusion parameters, solubility and acceptor nature of scandium in silicon as well as thermal stability of silicon doped with gadolinium and scandium impurity atoms have been established.

Preparing high performance FeAl/Al2O3 coating as tritium permeation barrier

Preparation of tritium permeation barrier (TPB) coating on the surface of structural materials is one of the most effective solutions to solve the issue of tritium permeation in tritium breeder blanket. The FeAl/Al2O3 coating is considered as the most promising candidate material for TPB coating due to its low hydrogen isotopes permeability, good adhesion and excellent radiation resistance. However, the current reported performance of FeAl/Al2O3 coating is much lower than its theoretical value. This work proposed a three-step process to prepare FeAl/Al2O3 TPB coating. By magnetron sputtering deposition, aluminizing and in-situ oxidation, a layer of high quality γ-Al2O3 about 250 nm thick was successfully formed on the 304 stainless steels. The Al2O3 layer was dense and no obvious defects were found. The gas-driven permeation measurements showed that the coating sample had strong ability to inhibit deuterium permeation, where the deuterium permeation flux was reduced by 5 orders of magnitude compared to the uncoated one at 600 °C, which is the best reported performance. Meanwhile, the thermal shock resistance test showed that the coating had no cracks after 50 thermal cycles. Moreover, the coating had a high electrical resistivity of approximately 3.42 × 1014 Ω cm, which could effectively reduce the magneto-hydrodynamic pressure drop (MHD) effects.

Durability enhancement of cement-based repair mortars through waterborne polyurethane modification: Experimental characterization and molecular dynamics simulations

With the rapid development of society and economy, more and more concrete structures are facing severe damage and deterioration, requiring repair. However, traditional cement repair materials generally suffer from brittleness, poor durability, and other deficiencies, failing to meet the demands for durable repair materials. In this study, we designed and synthesized an anionic waterborne polyurethane (WPU) emulsion for cement-based materials, characterized its performance, and applied it to modify cement mortars, evaluating the durability of the WPU-modified cement composite repair materials. The experimental results showed that the cured WPU exhibited good radiation resistance, tensile properties, and alkali resistance, and the WPU emulsion demonstrated good compatibility with cement mortars. The WPU-modified cement mortars exhibited improved resistance to drying shrinkage, thermal expansion, freeze-thaw cycles, and water penetration, with increasing WPU content further enhancing the durability of mortar. Simultaneously, the organic-inorganic phase distribution and microstructure of the WPU-modified cement-based composites were investigated. WPU can interact with the cement paste, forming an interpenetrating network structure and increasing the material's density. Finally, molecular dynamics simulations were employed to study the adsorption behavior of WPU on calcium silicate hydrate (CSH) and the transport of water molecules in WPU-modified CSH nanopores. The study found that WPU spontaneously adsorbed onto the CSH surface through hydrogen bonding and weakened the transport efficiency of water molecules in CSH nanopores. Overall, the WPU modification enhanced the density and durability of the cement repair mortars, and the MD method provided molecular-scale insights into the improved water penetration resistance. This study hopes to aid in the design and practical application of polymer-modified cement-based repair materials.

Diamond energy-dispersive dosimeter for measuring linear energy deposition distributions in clinical carbon beam therapy

A thin diamond membrane energy-dispersive dosimeter 50 μm thick was fabricated for estimating clinical dose distribution. In contrast to conventional semiconductors, diamond wide-bandgap semiconductors are expected to have excellent radiation tolerance and biological compatibility based on the linear relationship of stopping power ratio for clinical carbon particles. Linear energy transfer (LET) spectra were obtained along with the Bragg curve for a clinical carbon beam generated at Gunma University Heavy Ion Medical Center. The relative biological effectiveness (RBE) distributions were estimated from the LET spectra for both the mono-energy and spread-out Bragg peak irradiation configurations. The diamond detector was also used as a solid ionization chamber to obtain the radiation-induced current (RIC) distribution, which represents the physical dose distribution. The clinical dose distribution was estimated from the RIC and RBE distributions as proof of concept for the clinical carbon beam therapy field with a single-chip diamond energy-dispersive dosimeter.

Targeting S6K/NFκB/SQSTM1/Polθ signaling to suppress radiation resistance in prostate cancer

In this study we have identified POLθ-S6K-p62 as a novel druggable regulator of radiation response in prostate cancer. Despite significant advances in delivery, radiotherapy continues to negatively affect treatment outcomes and quality of life due to resistance and late toxic effects to the surrounding normal tissues such as bladder and rectum. It is essential to develop new and effective strategies to achieve better control of tumor. We found that ribosomal protein S6K (RPS6KB1) is elevated in human prostate tumors, and contributes to resistance to radiation. As a downstream effector of mTOR signaling, S6K is known to be involved in growth regulation. However, the impact of S6K signaling on radiation response has not been fully explored. Here we show that loss of S6K led to formation of smaller tumors with less metastatic ability in mice. Mechanistically we found that S6K depletion reduced NFκB and SQSTM1 (p62) reporter activity and DNA polymerase θ (POLθ) that is involved in alternate end-joining repair. We further show that the natural compound berberine interacts with S6K in a in a hitherto unreported novel mode and that pharmacological inhibition of S6K with berberine reduces Polθ and downregulates p62 transcriptional activity via NFκB. Loss of S6K or pre-treatment with berberine improved response to radiation in prostate cancer cells and prevented radiation-mediated resurgence of PSA in animals implanted with prostate cancer cells. Notably, silencing POLQ in S6K overexpressing cells enhanced response to radiation suggesting S6K sensitizes prostate cancer cells to radiation via POLQ. Additionally, inhibition of autophagy with CQ potentiated growth inhibition induced by berberine plus radiation. These observations suggest that pharmacological inhibition of S6K with berberine not only downregulates NFκB/p62 signaling to disrupt autophagic flux but also decreases Polθ. Therefore, combination treatment with radiation and berberine inhibits autophagy and alternate end-joining DNA repair, two processes associated with radioresistance leading to increased radiation sensitivity.

Threshold displacement energy map of Frenkel pair generation in [formula omitted]-Ga2O3 from machine-learning-driven molecular dynamics simulations

β-gallium oxide (β-Ga2O3) shows great promise for electronics applications, particularly, in future space operating devices exposed to harsh radiation environments for extended times. This study focuses on crucial, yet not fully explored, aspects of radiation damage in this material, such as threshold displacement energies and formation of various radiation-induced Frenkel pairs. Analyzing over 5,000 molecular dynamics simulations based on our machine-learning potentials, we conclude that the threshold displacement energies for two Ga sites, the tetrahedral (22.9 eV) and octahedral (20 eV) ones, differ stronger than the same values for three different O sites, which range only between 17 eV and 17.4 eV. Mapping of threshold displacement energies unveils significant differences in displacements for all five atomic sites. Our newly developed defect identification methodology successfully classified multiple Frenkel pair types in β-Ga2O3, with over ten different Ga and two primary O ones with a predominant O split interstitial at the O1 site. Finally, the calculated recombination energy barriers suggest that O Frenkel pairs are more likely to recombine upon annealing than Ga. These insights are pivotal for understanding the radiation damage and defect formation in Ga2O3, providing the basis for design of Ga2O3-based electronics with high radiation resistance.

Displacement cascade and defect-driven simulations in V-Ti-Ta-Nb high-entropy alloy

High-entropy alloys (HEA) have attracted considerable attention in the development of nuclear materials due to their excellent properties. In this study, the primary irradiation damage and long-term defect evolution of pure V, V-5Ti-5Ta conventional alloy, V-Ti-Ta MEA and V-Ti-Ta-Nb HEA were simulated by molecular dynamics (MD) to understand the irradiation resistance mechanism of these four systems. The primary irradiation damage simulation results indicate that the V-Ti-Ta MEA and V-Ti-Ta-Nb HEA exhibit a delayed thermal peak, a longer defect recombination time and a slightly higher number of final Frenkel pairs (FPs) than pure V and V-5Ti-5Ta alloy. Both primary irradiation damage and long-time defect evolution results show that V-Ti-Ta MEA and V-Ti-Ta-Nb HEA have lower defect clustering fraction, cluster size and dislocation loop size than pure V and V-5Ti-5Ta. This is because V-Ti-Ta MEA and V-Ti-Ta-Nb HEA exhibit lower dislocation loop binding energy and defect mobility compared to pure V and V-5Ti-5Ta alloy. This study investigates the reasons for the better radiation resistance of V-Ti-Ta MEA and V-Ti-Ta-Nb HEA than pure V and V-5Ti-5Ta conventional alloys.

Enhanced irradiation tolerance of the body-centered cubic structured FeCrW medium-entropy alloy as revealed from primary damage process

Multi-principal element alloys have attracted much attention in the development of nuclear reactor materials due to their potentially excellent irradiation resistance. Here, we employed Molecular Dynamics (MD) simulations to investigate displacement cascades resulting from Primary Knock-on Atoms (PKA) energies ranging from 10 to 50 keV in body-centered cubic structured FeCrW, FeCr and α-Fe. The analysis encompasses irradiation-induced defect generation and evolution, aiming to elucidate mechanism of irradiation tolerance. The simulations results indicate that FeCrW medium-entropy alloys generate more Frenkel defects during the thermal spike stage compared to α-Fe, yet fewer residual defects are observed in FeCrW at the end of the cascade. The suppression of the increase in defects number in FeCrW compared to α-Fe is significantly enhanced with the increasing PKA energies. It is foreseeable that the number of residual defects in FeCrW will be much smaller than that of α-Fe with a dramatic increase of PKA energy, which will be attributed to the improved defect self-self-healing ability in FeCrW. Moreover, the mechanism of enhanced defect self-self-healing is attributed to the size of the defect cluster, the formation and distribution of defects, the enhanced thermal spike, and the chemical disorder caused by the increase in composition leading to low thermal conductivity. The spectral energy density (SED) curves spikes of α-Fe, FeCr and FeCrW reveal an important role in the enhanced phonon scattering in improving defect self-repairing ability due to chemical disorder. Our research provides valuable insights for guiding the development of advanced multi-principal element alloy structural materials in nuclear industry, particularly for the fourth-generation fast reactor.

Physicochemical characterization of 10W-40 engine oil irradiated with gamma-rays

Today, the increasing use of oil and grease in industry with the aim of improving the performance of industrial machinery, equipment and protecting against damage to mechanical parts during work is not hidden from anyone. In this experimental study, the effects of gamma-rays on some physicochemical properties including the pour point, flash point, viscosity index, and kinematic viscosity of an engine oil at 40 °C, and 100 °C were investigated at various radiation doses up to 100 kGy. For this purpose, a commercial engine oil of type SAE 10W-40 was selected. To explore the structural changes of the samples at different doses, FTIR, and UV–Vis analyses were performed. These analyses confirmed the deformation of CH2 and CH3 groups in aldehydes at 2976-2838 cm−1, 1468 cm−1, and 1454 cm−1, and also predominance of the chain-scission or degradation up to 50 kGy. The findings indicated that within 0–50 kGy, the viscosity decreased significantly as the dose increased, while at 100 kGy, the hydrocarbons underwent crosslinking, leading to a negligible increase in the viscosity. Therefore, the stability of certain properties of the oil plays a crucial role in ensuring radiation tolerance designed for radiation applications.

Spectral features of pristine and irradiated white emitting InGaN LEDs with quantum wells

The emission spectra of InGaN/GaN white light emitting diodes (WLEDs) were measured. The main emission components were a LED blue line with λmax = 443 nm and a wide double band in the range of 500…650 nm of the secondary emission of AIT-YAG phosphor (Ce). The observed non-monotonic temperature dependence of the emission was attributed to the electric-field screening effect by mobile carriers as well as to thermal quenching due to the increased density of the phonon gas. The power conversion factor of phosphor emission increased in the temperature range of 200…290 K. The total energy losses for the Stokes shift were 82% and 77% for the first (blue) and the second band, respectively. The decrement of emission at high injection currents (over 20 mA) was attributed to ballistic transfer of carriers above the quantum wells and subsequent non-radiative recombination in the barrier layers. The existence of long-term relaxation processes in the white LEDs was assumed to be due to the accumulation of In atoms. Electron beam irradiation caused WLED efficiency degradation due to the introduction of deep traps in the quantum well region. The radiation resistance of the AIT-YAG phosphor was ~1.6 times higher than that of the InGaN part.

Irradiation Effect in Thermoelectric Polymer Polyaniline Induced by High-Energy Electron Beam

A comprehensive investigation was conducted on the relationships between molecular structure, morphology and thermoelectric properties of HCl-doped polyaniline (PANi) nanorods subjected to 10[Formula: see text]MeV electron beam irradiation. Morphological and structural characterization revealed that the crystallinity of irradiated PANi nanorods remained almost unchanged, and minimal oxygen content was detected. This resulted in minimal alterations to the thermo-stability. In addition, the thermoelectric properties of PANi were enhanced. A maximum conductivity of 22.85[Formula: see text]S/cm was obtained at 50[Formula: see text]kGy, which was 1.46 times that of pristine PANi. Interestingly, the Seebeck coefficient reached a maximum of −3.56[Formula: see text][Formula: see text]V/K at 100[Formula: see text]kGy, indicating [Formula: see text]-type organic semiconductor properties. However, a peak power factor of 0.024[Formula: see text][Formula: see text]W[Formula: see text]m[Formula: see text] K[Formula: see text] was achieved with 60[Formula: see text]kGy irradiation, which was slightly enhanced compared to 0.018[Formula: see text][Formula: see text]W[Formula: see text]m[Formula: see text][Formula: see text]K[Formula: see text] for pristine PANi. These results demonstrate that PANi exhibits good irradiation resistance after irradiated with a dose of 100[Formula: see text]kGy. Thus, PANi could be used in high-[Formula: see text] ray (electron) environments, such as radioisotope thermoelectric generators (RTGs).

Enhancing the radiation hardness of vertical 4H–SiC detectors by the metal-oxide-semiconductor structure

In this work, 4H–SiC α-particle detectors with metal/semiconductor (MS) and metal/oxide/semiconductor (MOS) structures have been fabricated. The effects of introducing a SiO2 dielectric layer to form a MOS structure on the electrical properties, the performances, and the radiation hardness of the detectors have been evaluated systematically by comparing those with the MS structure. It is found that the reverse leakage current and the signal-to-noise ratio of α-particle detectors at high voltages can be improved by the MOS structure. Furthermore, the MOS structure exhibits much higher radiation hardness, as the energy resolution degradation of α particle detectors with MOS and MS structures after the γ irradiation is 0.59% and 2.87%, respectively. This work may provide a way to enhance the radiation hardness of 4H–SiC α-particle detectors.

LMIC-03. BRAINSTEM RADIATION NECROSIS IN A PATIENT WITH RECURRENT MEDULLOBLASTOMA. SUCCESFULL TREATMENT OF A HIGHLY FEARED COMPLICATION

Abstract BACKGROUND Medulloblastoma is the most common malignant brain tumor in pediatric population. Standard treatment combines surgery, risk-adapted craniospinal irradiation and chemotherapy. Given the well-known cognitive sequelae in young children associated to radiation, strategies in infants try to avoid upfront radiation. A significant number of patients treated during infancy will ultimately relapse. Re-irradition in relapse setting has proven to be effective in disease control (survival depending on several factors) although there is a concern in exceeding radiation tolerance and risk of toxicity. METHODS Herein, we describe the case of male patient that presented at 1 year of age with a non-metastatic anaplastic medulloblastoma that was completely resected. He received 3 cycles of adjuvant chemotherapy (as per Head Start II), local relapse was detected in tumor bed during evaluation and was completely resected, afterwards he received myeloablative chemotherapy with stem cell rescue and posterior fossa radiation therapy (54 Gy). At 8 months off therapy patient developed spinal relapse in imaging with negative cytology, then treated with spinal irradiation 36Gy without adjuvant chemotherapy. He remained disease free during 12 months, then tumor recur at the right cerebellopontine angle, surgery was complete and there was no evidence of distant disease. Patient received adjuvant local radiation with 30.6Gy followed by chemotherapy (bi weekly bevacizumab + irinotecan). Cumulative maximal dose to brainstem was 84Gy. 2 months after radiation patient presented with extreme sleepiness and imaging findings compatible with brainstem radiation necrosis, symptoms resolved promptly after scheduled bevacizumab. Patient is currently 6-year-old and remains free of disease after 3 years off therapy. CONCLUSION Medulloblastoma treatment in infants is challenging because survival is not the only goal. Future clinical trials will help to better tailored treatment based on molecular biology. Re-irradiation in medulloblastoma has been described as well tolerated but clinician should be aware of its complications and management.

DIPG-77. SOMATICTP53,PIK3R1, NF1 ORTERT MUTATIONS ARE ASSOCIATED WITH INFERIOR CLINICAL OUTCOME IN H3K27M-ALTERED DIFFUSE MIDLINE GLIOMA

Abstract BACKGROUND H3K27-altered diffuse midline gliomas (DMGs) have poor prognosis with no standard of care therapy beyond radiation (RT). While RT prologues survival, not all patients respond. Prior work has shown somatic TP53 mutations predict radiation resistance, and poorer outcomes. We report on a multi-center retrospective cohort study to identify molecular biomarkers of RT response in DMG patients. METHODS We performed retrospective chart reviews of patients with biopsy-proven H3K27M-altered DMG between 2013-2023 from six US medical centers and the DMG Center in Zurich. Patients with tumor genomic sequencing and completion of RT were eligible. Genomic alterations were evaluated for somatic mutations, fusions, and chromosomal instability. Cox proportional hazard models were used to evaluate associations between genomic alterations and survival. Multivariate analysis included all significant variables at P <0.1 in initial analysis, including age at diagnosis, tumor location, TP53 and PIK3R1 alterations. RESULTS 297 patients (135 female; median age 8.3years; range 0.2-71.4 years) were included. Median progression-free survival (PFS) and overall survival (OS) was 7.6months (95%-CI 6.9-8.6) and 14.0months (95%-CI 12.9-15.7). Univariate analysis identified TP53 or PIK3R1 status to be associated with shorter OS (TP53-mutant 12.5months vs. TP53-wildtype 17.5months; HR=1.5; 95%-CI (1.1-2.0), P=0.005); (PIK3R1-mutant 12.6months vs. PIK3R1-wildtype 14.5months; HR=1.9, 95%-CI (1.1-3.4), P=0.03). Multivariate analysis corroborated TP53 status association with shorter OS (HR=1.5; 95%-CI (1.2-2.0), P=0.003). Subgroup univariate analysis of pontine DMG patients showed reduced OS with TP53, NF1, or TERT mutations (TP53-mutant 11.9months vs. TP53-wildtype 15.2months; HR=1.6; 95%-CI (1.1-2.3), P=0.02); (NF1-mutant 8.4months vs. NF1-wildtype 13.6months; HR=2.3; 95%-CI (1.1-5.0), P=0.03); (TERT-mutant 8.5months vs. TERT-wildtype 13.6months; HR=2.5; 95%-CI (1.1-5.7), P=0.03). Subsequent multivariate analysis corroborated the association of TERT mutations with shorter OS in pontine DMG (HR=2.5; 95%-CI (1.05, 5.9), P=0.03). CONCLUSIONS This is one of the largest molecular characterized cohorts of H3K27M-altered DMG patients. DMGs with somatic TP53 or PIK3R1 mutations demonstrate inferior OS. Pontine DMG patients with somatic TP53, NF1 or TERT mutations demonstrate inferior OS.

Mission Results: Creating a 3D Map of a Very High Radiation Confined Space Using the LiDAR-Equipped Elios 3 Drone

A prototype configuration of an Elios 3 indoor inspection drone, made by Flyability, comprising a lightweight light detection and ranging (LiDAR) system and a wide-range, electronic dosimeter was developed and tested to quickly measure radiation levels and collect three-dimensional (3D) spatial data from within a very high radiation nuclear waste storage facility at the U.S. Department of Energy−operated Idaho National Laboratory (INL) site. The compact drone configuration was used for inspecting and collecting data from areas difficult or hazardous to access using conventional methods. Validation testing of the prototype drone configuration was performed, including maneuverability, radiation tolerance, dosimeter integration, and elevated ambient temperature testing. The drone configuration was shown to operate successfully in an ionizing radiation field as high as 100 Gy/h (10 000 rad/h), with an accumulated radiation dose of 40 Gy (4000 rad) and ambient air temperatures of 54°C (130°F). On November 16, 2022, the LiDAR and dosimeter-equipped prototype drone was used to successfully collect 3D spatial data and radiation measurements from within a very high radiation nuclear waste storage facility at the INL site, where it encountered radiation levels up to 7 Gy/h (700 rad/h). The mission, which included three flights of the prototype drone configuration, represents the first-ever drone flight within a very high radiation nuclear waste storage facility. On the third flight into the storage facility, the drone was unable to produce adequate lift necessary to fly back out of the facility. The lessons learned suggest the loss of adequate lift was due to the added weight of the dosimeter payload and the increasing temperature of the air inside the facility due to radioactive decay. Although the prototype drone was not retrievable, the drone’s wireless transmission system successfully transmitted the radiation measurements to engineers outside of the facility.