Yb Ions Research Articles

414.9 W in-band pumped Er/Yb co-doped fiber amplifier seeded by a random fiber laser.

We demonstrated a 414.9 W large-mode-area Er/Yb co-doped fiber amplifier with a good time-domain stability, seeded by a 1568 nm random fiber laser (RFL) seed with a half-open cavity. We believe this to be the highest output power of the RFL in a 1.5 µm band to date. At the maximum output power, the optical efficiency was 36.9% and the 3 dB linewidth was 0.69 nm. The 1535 nm fiber lasers were used as the pumping source of the main amplifier to avoid the parasitic lasing of Yb ions. The spectral linewidth broadening was suppressed during the amplification process due to the stable temporal output of the RFL seed. The M2 factor increased from 2.28 at 145.7 W to 2.83 at 280.8 W. Our research provides a robust approach for achieving high-power and high-spectral-purity RFLs in the 1.5 µm band.

Anisotropy of radiation-induced defects in Yb-implanted β-Ga2O3

RE-doped β-Ga2O3 seems attractive for future high-power LEDs operating in high irradiation environments. In this work, we pay special attention to the issue of radiation-induced defect anisotropy in β-Ga2O3, which is crucial for device manufacturing. Using the RBS/c technique, we have carefully studied the structural changes caused by implantation and post-implantation annealing in two of the most commonly used crystallographic orientations of β-Ga2O3, namely the (-201) and (010). The analysis was supported by advanced computer simulations using the McChasy code. Our studies reveal a strong dependence of the structural damage induced by Yb-ion implantation on the crystal orientation, with a significantly higher level of extended defects observed in the (-201) direction than for the (010). In contrast, the concentration and behavior of simple defects seem similar for both oriented crystals, although their evolution suggests the co-existence of two different types of defects in the implanted zone with their different sensitivity to both, radiation and annealing. It has also been found that Yb ions mostly occupy the interstitial positions in β-Ga2O3 crystals that remain unchanged after annealing. The location is independent of the crystal orientations. We believe that these studies noticeably extend the knowledge of the radiation-induced defect structure, because they dispel doubts about the differences in the damage level depending on crystal orientation, and are important for further practical applications.

Preparation, microstructure and properties of Yb2O3-x optical hydrophobic films for infrared windows

In order to improve the adaptability of infrared windows in harsh wet environments, Yb2O3-x films were prepared by ion assisted reactive thermal evaporating deposition. The surface morphology, microstructure, composition, optical properties, hardness, residual stress and hydrophobicity of Yb2O3-x films were comprehensively characterized. The effects of the oxygen flow rate on the properties of the Yb2O3-x films had been explored. It is found that the root-mean-square roughness of the films increases as the flow rate increases from 10 sccm to 35 sccm. The crystallization characteristics are closely related to the oxygen flow rate, and the film prepared at 15 sccm exhibits the best crystallinity. X-ray photoelectron spectroscopy (XPS) testing shows that the ratio of Yb to lattice oxygen decreases, while the content of trivalent Yb ions in the film increases with increasing oxygen flow rate. Thin film prepared at lowest oxygen flow rate exhibits highest optical absorption, which is related to oxygen defects in the films. Moreover, films prepared at 15 sccm, 25 sccm and 35 sccm show good transparency in the long-wave infrared band. The hardness of the film prepared at 15 sccm is about 9 GPa. Due to change in density of the thin film, the compressive stress of the film decreases with increase of oxygen flow rate. The hydrophobicity of the film is affected by the surface chemical composition and surface roughness, and the maximum water contact angle is 100°. In a word, the Yb2O3-x films are found to be excellent hydrophobic protective coatings for infrared windows.

Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3.

β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In this work, we investigate the crystal lattice recovery of (2¯01)-oriented β-Ga2O3 crystals implanted with Yb ions to the fluence of 1 ×1014 at/cm2. Post-implantation annealing at a range of temperature and different atmospheres was used to investigate the β-Ga2O3 crystal structure recovery and optical activation of Yb ions. Ion implantation is a renowned technique used for material doping, but in spite of its many advantages such as the controlled introduction of dopants in concentrations exceeding the solubility limits, it also causes damage to the crystal lattice, which strongly influences the optical response from the material. In this work, post-implantation defects in β-Ga2O3:Yb crystals, their transformation, and the recovery of the crystal lattice after thermal treatment have been investigated by channeling Rutherford backscattering spectrometry (RBS/c) supported by McChasy simulations, and the optical response was tested. It has been shown that post-implantation annealing at temperatures of 700-900 °C results in partial crystal lattice recovery, but it is accompanied by the out-diffusion of Yb ions toward the surface if the annealing temperature and time exceed 800 °C and 10 min, respectively. High-temperature implantation at 500-900 °C strongly limits post-implantation damage to the crystal lattice, but it does not cause the intense luminescence of Yb ions. This suggests that the recovery of the crystal lattice is not a sufficient condition for strong rare-earth photoluminescence at room temperature and that oxygen annealing is beneficial for intense infrared luminescence compared to other tested environments.

Effect of Ho3+ Doping on Structural and Magnetic Properties of Multiferroic YbMnO3

Using the traditional solid-state reaction approach, multiferroic ceramics with the compositional formula Yb1−xHoxMnO3, where x = 0 to 0.4 with 0.1 variation were synthesized. The structural and magnetic properties of the prepared poly-crystalline samples Yb1−xHoxMnO3 were investigated to show the effect of higher magnetic moment Ho3+ ion over the Yb ion. X-ray diffraction was used to analyze the compound’s crystal structure and confirm that they have a hexagonal single-phase structure with a P6 3 cm space group. The presence of functional groups and their shifting to lower frequency regions were revealed by Fourier-transform infrared spectroscopy. UV–vis absorbance spectra were used to calculate the energy gap values, and the resultant data shows a decrease in band gap values with an increase in Ho3+ doping. Crystal deformation with the doping of Ho3+ was observed using Raman spectra. Room-temperature magnetic studies were used to reveal the paramagnetic nature of the samples and the increase in magnetic parameters due to the doping of the higher magnetic moment Ho3+ ion.

Sonochemical synthesis, characterization, and infrared-driven photocatalytic performance of 2%Er/x%Yb co-doped BiVO4 nanoparticles (x=2–10%)

This study investigates the influence of Yb co-doping on the photocatalytic performance of 2% Er-doped BiVO4 nanoparticles under infrared light for wastewater treatment. Er/Yb co-doping induces a phase transformation from monoclinic to tetragonal BiVO4, significantly enhancing infrared light absorption and photocatalytic activity. The optimal Yb concentration for maximizing activity is found to be 2%, achieving a one-order-of-magnitude improvement compared to undoped BiVO4. Up-conversion processes involving Yb and Er ions play a crucial role in this enhancement, converting low-energy infrared photons into higher-energy visible emissions that drive photocatalysis. These findings demonstrate a promising strategy for developing highly efficient and sustainable photocatalysts for wastewater treatment utilizing the abundant yet underexplored infrared region of the solar spectrum.

Spectral properties of Yb-doped AgBiS2 and AgInS2 nanocrystals

Subject of study. The spectral features of nanocrystals with ternary compositions I-V-VI2 and I-III-VI2 doped with the rare earth metal ytterbium are investigated and described. Purpose of the study. The aim of this work is to develop a novel synthesis method for these nanocrystals to further examine their optical and morphological properties. Method. The average sizes of AgInS2:Yb and AgBiS2:Yb nanocrystals are analyzed using atomic force microscopy and dynamic light scattering, and the results are compared. Spectrophotometry and spectrofluorimetry are employed to record the absorption and photoluminescence spectra, respectively. Additionally, the photoluminescence decay kinetics are recorded using a laser scanning luminescence microscope for a deeper exploration of the electronic structure of the synthesized materials. Main results. Morphological analysis reveals that single-stage synthesis produced nanocrystals based on the AgInS2 matrix are smaller than the reference sample, while two-stage synthesis results in average nanocrystal sizes 1.5 times larger than the reference sample. The absorption spectra of the AgInS2:Yb and AgBiS2:Yb samples, as well as their reference samples, correspond to typical absorption spectra of semiconductor nanocrystals of ternary compounds. The absorption spectrum of AgBiS2:Yb nanocrystals, unlike AgInS2:Yb, spans a broad range from 300 nm to 1300 nm. In the photoluminescence spectra of AgInS2 and AgInS2:Yb nanocrystals, no significant shift of the band maximum is observed, and photoluminescence typical of Yb ions is absent. It is found that the weighted average photoluminescence lifetime in AgInS2:Yb nanocrystals can be modulated by ytterbium doping. Photoluminescence in AgBiS2 and AgBiS2:Yb samples is not detected in the red and near-infrared regions. Practical significance. These materials may be used in the fabrication of absorber layers for solar cells, as well as sensitizers for photodynamic and photothermal therapy. Further studies of isotropic samples of these nanocrystals could not only expand their potential applications but also enhance the physical properties of nanoparticles in the long term.

Boosting electrochemical energy storage properties of SrGd2O4 through Yb3+ and Tm3+ rare earth ion doping

Electrochemical supercapacitors represent advanced energy storage devices that excel in the swift storage and delivery of electrical energy, effectively bridging the gap between conventional capacitors and batteries. The present work, aimed to investigate charge storage properties of SrGd2O4 and rare earth ions Yb3+ and Tm3+ doped in SrGd2O4. Both materials were prepared via simple sol-gel synthesis and characterized by XRD, XPS, and FE-SEM with EDS. Characterization confirmed the presence of Tm3+ and Yb3+ in the SrGd2O4 matrix with a uniform distribution of elements. The charge storage behavior of pure SrGd2O4 and SrGd2O4:Yb4Tm1 in various electrolytes was thoroughly explored. Large electrochemical potential windows were shown by both electrode materials in aqueous 6 M KOH (1.7 V), which is essential for supercapacitors to achieve high specific energy. Furthermore, SrGd2O4:Yb4Tm1 demonstrated a substantially more pronounced charge storage effect in 6 M KOH electrolyte, with almost double times higher specific capacitance values compared with an un-doped SrGd2O4 sample. The main impact on the electrochemical window had matrix SrGd2O4, while the main impact on specific capacitance had rear earth dopants (Yb3+ and Tm3+). Improved charge storage characteristics of SrGd2O4:Yb4Tm1 were also evident through a notable reduction in overall resistance observed in electrochemical impedance spectroscopy experiments. Concerning the two-electrode GCD measurements, the SrGd2O4:Yb4Tm1 electrode in 6 M KOH showed a specific capacitance of 143 F g−1, with the specific energy of 12.5 Wh kg−1 at 0.6 A g−1. These findings demonstrate the potential of rare earth ion doping in enhancing the energy storage properties of SrGd2O4, offering promising avenues for the development of high-performance supercapacitors.

Inkjet Printing of Yb:YAG Transparent Ceramic Planar Waveguide Laser Gain Medium

Herein, a YAG/10 at% Yb:YAG/YAG transparent ceramic planar waveguide (PWG) gain medium has been molded via inkjet printing and dry pressing molding. The composition and rheological property of ink are optimized along with the printing process to enhance the printing accuracy and quality. The PWG has dimensions of 13.5 × 8.0 × 1.8 mm3, while the thickness of the core Yb:YAG layer is ≈190 μm. The in‐line transmittance of the PWG reaches 81.7% at 1030 nm, and the average grain size is ≈2.3 μm. The diffusion characteristics of Yb ions across the interface between the cladding YAG layer and the core Yb:YAG layer are investigated by calculating the diffusion coefficient and the mean diffusion distance of 172Yb ions. The Yb:YAG PWG oscillator, which is pumped from a single end by a 940 nm laser diode, produces continuous wave laser at a wavelength of 1030 nm and exhibits the highest power (3.8 W) and highest absorbed–output slope efficiency (64.6%).

Robust antibacterial activity of rare-earth ions on planktonic and biofilm bacteria.

Bacterial infections pose a serious threat to human health, with emerging antibiotic resistance, necessitating the development of new antibacterial agents. Cu2+and Ag+are widely recognized antibacterial agents with a low propensity for inducing bacterial resistance; however, their considerable cytotoxicity constrains their clinical applications. Rare-earth ions, owing to their unique electronic layer structure, hold promise as promising alternatives. However, their antibacterial efficacy and biocompatibility relative to conventional antibacterial agents remain underexplored, and the variations in activity across different rare-earth ions remain unclear. Here, we systematically evaluate the antibacterial activity of five rare-earth ions (Yb3+, Gd3+, Sm3+, Tb3+, and La3+) againstStaphylococcus aureusandPseudomonas aeruginosa, benchmarked against well-established antibacterial agents (Cu2+, Ag+) and the antibiotic norfloxacin. Cytotoxicity is also assessed via live/dead staining of fibroblasts after 24 h rare-earth ion exposure. Our findings reveal that rare-earth ions require higher concentrations to match the antibacterial effects of traditional agents but offer the advantage of significantly lower cytotoxicity. In particular, Gd3+demonstrates potent bactericidal efficacy against both planktonic and biofilm bacteria, while maintaining the lowest cytotoxicity toward mammalian cells. Moreover, the tested rare-earth ions also exhibited excellent antifungal activity againstCandida albicans. This study provides a critical empirical framework to guide the selection of rare-earth ions for biomedical applications, offering a strategic direction for the development of novel antimicrobial agents.

Characteristics of the incorporation of Yb defect states in CuO:ZnO nanocomposite

Exploring magnetic order in nonferromagnetic substances, such as CuO:ZnO, becomes especially attractive when introducing defect states through nonmagnetic ion doping. In this study, we delved into the impact of Yb doping on the structural, morphological, optical, and magnetic properties of CuO:ZnO. The Yb doped CuO:ZnO was prepared with different Yb concentrations (x = 0.00–20 %) via the temperature-assisted co-precipitation method. X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), UV–Vis spectroscopy, and vibrating sample magnetometer (VSM) were used to investigate the structural, morphological, optical, and magnetic properties of Yb doped CuO:ZnO nanocomposites.The incorporation of Yb in CuO:ZnO nanocomposites leads to a notable shift of the characteristic XRD peaks of CuO and ZnO to lower angles, accompanied by an increase in the lattice parameters. UV–visible absorption spectroscopy shows an overall decrease in the optical band gap energy of ZnO as the Yb defect level increases. FE-SEM studies revealed the transformation of spherical structures into agglomerated non-spherical structures upon the introduction of Yb ions into CuO:ZnO nanocomposites. According to XPS data, the predominant valences of Yb-doped CuO:ZnO nanocomposites are Zn2+, Cu2+, and Yb3+. One noteworthy observation from the XPS results is that, in comparison to the intensity of OL or Oad peaks, the intensity of OV (Oxygen vacancy) defect peak increases when the Yb impurity concentration increases. Magnetic measurements demonstrated a diamagnetic order in pure ZnO, which converts to a ferromagnetic order with the incorporation of Yb defect states. The ferromagnetic properties of the Yb-doped CuO:ZnO nanocomposite can be ascribed to the exchange interaction of Yb3+ ions with defect states (Oxygen Vacancy) in ZnO and CuO.

Study of NIR long afterglow luminescent materials are used in silicon solar cells to produce electricity under dark condition

It is well known that the silicon solar cells can realize effective photoelectric conversion only under sunlight irradiation, and that can not generate electricity under dark condition. Thus, the effective working (photoelectric conversion) time of silicon solar cells throughout the whole day is very limited. In this paper, the up-conversion NIR long afterglow luminescent materials, Zn3Ga2-x-y-zGe2O10:xCr3+,yYb3+,zEr3+, were successfully prepared through high temperature calcination method. The structure, morphology, elemental composition and optical property of the prepared samples were analyzed by a series of characterization methods. In addition, the mechanisms of afterglow luminescent of these materials and the energy transfer mechanisms of up-conversion luminescent between the luminescent center Cr3+ and sensitizer ions (Yb3+ and Er3+) are discussed, respectively. Finally, the prepared luminescent materials are fixed on glass sheets with reflective capacity, and then are integrated with silicon solar cells in the form of a cover plate. And then, under dark conditions, the current density-voltage (J-V) curves and current density-time (J-T) curves of these silicon solar cells were tested to explore the influences of doping proportions of Cr3+, Yb3+, Er3+, Yb3+-Er3+ pairs and the calcination temperatures of Zn3Ga2-xGe2O10:xCr3+ on the power generation of the silicon solar cells. The results show that the photovoltaic conversion instantaneous efficiency of silicon solar cell with Zn3Ga1.975Ge2O10:1.0Cr3+,1.0 Yb3+,0.5Er3+ reaches the maximum value of 2.549 % under dark condition. The average efficiency within 300 s is 0.238%. At the same time, the silicon solar cell can generate dark current for up to 8.0 h, whose maximum dark current density and open-circuit voltage of 4.88 μA/cm2 and 0.914 mV, respectively. It is hoped that this study can provide some new ideas for silicon solar cells to generate electricity without sunlight irradiation.

Benign separation, adsorption, and recovery of rare-earth Yb(III) ions with specific ligand-based composite adsorbent

This study developed a ligand-based composite adsorbent (ComA) for efficient Ytterbium (Yb(III)) adsorption and recovery from waste samples. The organic ligand of 1E,1`E,1``E,1```E (tetrakis(3-carboxysalicylidene)) naphthalene-1,2,5,5-tetramine (TSNT) was synthesized and TSTN was successfully immobilized onto mesoporous silica by a direct immobilization approach. The experiment conditions were optimized based on contact time, solution acidity, initial Pb(II) concentration pH value, and diverse metal salt concentrations. The Europium (Eu(III)) ion was selected from the lanthanides (Ln(III)) series for green and robust adsorption and recovery based on the adsorption, complexation, and selectivity tendency from the standpoint of the pH-dependent factor. The chemical compound of TSTN consisted of O- and N-donor atoms and was able to make stable complexation with Ln(III) ions in optimum conditions due to the open functionality of the ComA. The experimental data revealed that the maximum Yb(III) adsorption was possible at pH 5.0. The presence of other cations and anions did not adversely affect the Yb(III) capturing by the adsorbent. The bonding mechanism suggested that O- and N-donor atoms of TSTN were strongly coordinated to Eu(III) with a 2:1 ratio complexation. The maximum adsorption capacity was determined to be as high as 149.27 mg/g. The extraction of Yb(III) ions from the saturated adsorbent was possible with 0.25 M HNO3. The regenerated adsorbent that remained maintained the high selectivity to Yb(III) ions and exhibited almost the same adsorption capacity as that of the original adsorbent. However, the adsorption efficiency slightly decreased after several cycles. Therefore, the proposed adsorbent offered a cost-effective material and may be considered a viable alternative for effective adsorption and recovery of Yb(III) ions from water samples.

Polarity-Mediated Antisolvent Control Enables Efficient Lanthanide-Based near-Infrared Perovskite LEDs.

Alloying lanthanide ions (Yb3+) into perovskite quantum dots (Yb3+:CsPb(Cl1-xBrx)3) is an effective method to achieve efficient near-infrared (NIR) luminescence (>950 nm). Increasing the Yb3+ alloying ratio in the perovskite matrix enhances the luminescence intensity of Yb3+ emission at 990 nm. However, high Yb3+ alloying (>15%) results in vacancy-induced inferior material stability. In this work, we developed a polarity-mediated antisolvent manipulation strategy to resolve the incompatibility between a high Yb3+ alloying ratio and inferior stability of Yb3+:CsPb(Cl1-xBrx)3. Precise control of solution polarity enables increased uniformity of the perovskite matrix with fewer trap densities. Employing this strategy, we obtain Yb3+:CsPb(Cl1-xBrx)3 with the highest Yb3+ alloying ratio of 30.2% and a 2-fold higher electroluminescence intensity at 990 nm. We lever the engineered Yb3+:CsPb(Cl1-xBrx)3 to fabricate NIR-LEDs, achieving a peak external quantum efficiency (EQE) of 8.5% at 990 nm: this represents the highest among perovskite NIR-LEDs with an emission wavelength above 950 nm.

Defect accumulation in β-Ga2O3 implanted with Yb

Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper presents the detailed study of defect accumulation in the β-Ga2O3 single crystal implanted with Ytterbium (Yb) ions and the impact of Rapid Thermal Annealing (RTA) on the defects formed. The (2¯01)oriented β-Ga2O3 single crystals were implanted with eleven fluences of Yb ions ranging from 1 × 1012 to 5 × 1015 at/cm2. Channeling Rutherford Backscattering Spectrometry (RBS/c) was used to study the crystal lattice damage induced by ion implantation and the level of structure recovery after annealing. The quantitative and qualitative analyses of collected spectra were performed by computer simulations. As a result, we present the first defect accumulation curve of β-Ga2O3 implanted with rare earth ion that reveals a two-step damage process. In the first stage, the damage of the β-Ga2O3 is inconspicuous, but begins to grow rapidly from the fluence of 1 × 1013 at/cm2, reaching the saturation at the random level for the Yb ion fluence of 1 × 1014 at/cm2. Further irradiation causes the damage peak to become bimodal, indicating that at least two new defect forms develop for the higher ion fluence. These two damage zones differently react to annealing, suggesting that they could origin from two phases, the amorphization phase and the new crystalline phase of Ga2O3. High-resolution x-ray diffraction (HRXRD) demonstrates the presence of strain and the γ phase of Ga2O3 after implantation, which disappear after annealing.

Strong green up-conversion luminescence and optical thermometry of Ho3+/Yb3+ Co-doped AlN submicron towers

Rare-earth (RE) doped aluminum nitride (AlN) holds great promise for integrated optoelectronic devices. Here, the Ho and Yb co-doped AlN (AlN:Ho3+/Yb3+) submicron towers were prepared by a direct nitridation route. XRD, Raman, XPS and EDS studies showed successful doping of Ho and Yb ions into AlN. SEM images show that the submicron towers have an interesting layered structure by layer-by-layer stacking of hexagonal AlN nanosheets. Under excitation at 980 nm, AlN:Ho3+/Yb3+ submicron towers exhibit up-conversion (UC) luminescence at 540, 550, 659, and 762 nm, which are due to Ho3+/Yb3+ system from 5F4, 5S2→5I8, 5F5→5I8, and 5F4, 5S2→5I7 respectively. Based on the intensity ratio and decay lifetime of UC luminescence, the optical temperature sensing characteristics are investigated from 298 K to 548 K. The maximum relative sensitivities associated with the intensity ratio of I540, 550 and I659 and decay lifetime of 659 nm are as high as 2.73% K−1 and 0.43% K−1, respectively. This work broadens the optoelectronic properties of RE doped AlN.

3D Printing of Gradient-Doped Yb:YAG Laser Ceramics by Leveraging Active Mixing

Gradient-doped laser ceramics fabricated via 3D printing have great potential for high-power laser applications. However, it is challenging to produce such types of gain media because it is inconvenient to fabricate different component slurries prepared offline using traditional methods precisely. To address these issues, a facile approach for the additive manufacturing of high-power laser ceramics is proposed for gradient structure fabrication. First, a material-extrusion-based 3D printing device with a homemade active mixing module is developed to fabricate gradient-doped Yb:YAG(Y3Al5O12) laser ceramics using two slurries with different doping concentrations. Subsequently, the active mixing module is systematically investigated to obtain different Yb-doped concentrations of printing slurries with a uniform element distribution. By measuring the switching delay volume between different components, a proper volume adjustment enables the Yb concentration distribution of the green bodies to be consistent with the designed profile in the 3D process. Finally, multi-component (0–5–10–5–0 at% Yb:YAG) green bodies are printed, and experimental tests are conducted to evaluate the performance of these gradient-doped laser ceramics. The results show that the gradient-doped ceramic obtained 82.1% in-line transmittance at 1100 nm (4.6 mm thickness, along with the doping concentration gradient) and the average Yb ions diffusion distance across the interface fitted in the 20–30 μm range. Furthermore, a 1030 nm laser output with an output power of 4.5 W with a slope efficiency of 41.3% is achieved when pumped with a 940 nm laser diode. This study provides useful insights for developing various gradient rare-earth-doped laser ceramics for high-power laser applications.

Random laser emission at 1064 and 1550 nm in a Er/Yb co-doped fiber-based dual-wavelength random fiber laser.

Dual-wavelength fiber lasers operating with a wide spectral separation are of considerable importance for many applications. In this study, we propose and experimentally explore an all-fiberized dual-wavelength random fiber laser with bi-directional laser output operating at 1064 and 1550 nm, respectively. A specially designed Er/Yb co-doped fiber, by optimizing the concentrations of the co-doped Er, Yb, Al and P, was developed for simultaneously providing Er ions gain and Yb ions gain for RFL. Two spans of single mode passive fibers are employed to providing random feedback for 1064 and 1550 nm random lasing, respectively. The RFL generates 5.35 W at 1064 nm and 6.61 W at 1550 nm random lasers. Two power amplifiers (PA) enhance the seed laser to 50 W at 1064 nm with a 3 dB bandwidth of 0.31 nm and 20 W at 1550 nm with a 3 dB bandwidth of 1.18 nm. Both the short- and long-term time domain stabilities are crucial for practical applications. The output lasers of 1064 and 1550 nm PAs are in the single transverse mode operating with a nearly Gaussian profile. To the best of our knowledge, this is the first demonstration of a dual-wavelength RFL, with a spectral separation as far as about 500 nm in an all-fiber configuration.

Planar triangular lattice of the LuMgGaO4: Clustered site-occupancy and the upconversion luminescence of the co-doped Er,Yb ions

The ordered and stable structure of inorganic lattice is the basis of constructing high-efficiency rare earth activated fluorescence, solid-state laser or other optical materials. The mixed sensitized and activated rare earth ions usually keeps a uniform space-occupying and the energy transfer depends much on the doping concentration, while the aggregation of rare earth dopants in order is rare. In this work, a series of LuMgGaO4 phosphors were synthesized and the detail lattice parameters are analyzed through Vietveld refinement and the new CIF file is provided. The site-occupancy of Er3+, Yb3+ shows clustered features and the Er–Yb sublattice structure with various Yb/Er ratios were constructed on the basis of planar triangular lattice. The long-distance excitation energy migration to lattice or defects can be effectively inhibited in case of the hexagonal circle Er-6Yb sublattice, in which the most intense green/red UCL was obtained. All the results demonstrate the novelty of regulating ordered site-occupancy of rare earth ions on a compact planar triangular lattice with higher efficiency of energy migration, which will pave a way for developing phosphor-converted materials or laser materials with better performance.

Sustainable solid-state method of synthesis, characterisation, and photoluminescence studies of Yb3+/Ho3+ doped YPO4 nanomaterials

To encourage the production of [PO4]3- groups, a group of up-converting …down-converting YPO4 Yttrium phosphate compounds were synthesized using the solid-state technique in a basic environment. The noble pureness of the doped matrix was confirmed by the structural studies and Rietveld analysis, whereas growth in the part of the YPO4: Yb, Ho structures was discovered with a higher dopant concentration. The phosphates group, along with the ions Yb3+ and Ho3+, allowed for the UC…DC luminescence. While we observe up-conversion luminescence with colour under the 980 nm continuous movement of wave laser irradiation had been set on the way to the red area, the powerful green emission had been produced by 300 nm excitation. Following the results, materials that are resistant to different applications can use synthetic phosphors.