Ion Beam Treatment Research Articles

Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment

In this perspective article, we discuss the application of ion implantation to manipulate strain (by either neutralizing or inducing compressive or tensile states) in suspended thin films. Emphasizing the pressing need for a high-mobility silicon-compatible transistor or a direct bandgap group-IV semiconductor that is compatible with complementary metal–oxide–semiconductor technology, we underscore the distinctive features of different methods of ion beam-induced alteration of material morphology. The article examines the precautions needed during experimental procedures and data analysis and explores routes for potential scalable adoption by the semiconductor industry. Finally, we briefly discuss how this highly controllable strain-inducing technique can facilitate enhanced manipulation of impurity-based spin quantum bits (qubits).

Probing Defectivity Beneath the Hydrocarbon Blanket in 2D hBN Using TEM-EELS.

The controlled creation and manipulation of defects in 2D materials has become increasingly popular as a means to design and tune new material functionalities. However, defect characterization by direct atomic-scale imaging is often severely limited by surface contamination due to a blanket of hydrocarbons. Thus, analysis techniques that can characterize atomic-scale defects despite the contamination layer are advantageous. In this work, we take inspiration from X-ray absorption spectroscopy and use broad-beam electron energy loss spectroscopy (EELS) to characterize defect structures in 2D hexagonal boron nitride (hBN) based on averaged fine structure in the boron K-edge. Since EELS is performed in a transmission electron microscope (TEM), imaging can be performed in-situ to assess contamination levels and other factors such as tears in the fragile 2D sheets, which can affect the spectroscopic analysis. We demonstrate the TEM-EELS technique for 2D hBN samples irradiated with different ion types and doses, finding spectral signatures indicative of boron-oxygen bonding that can be used as a measure of sample defectiveness depending on the ion beam treatment. We propose that even in cases where surface contamination has been mitigated, the averaging-based TEM-EELS technique can be useful for efficient sample surveys to support atomically resolved EELS experiments.

Patterning of COC Polymers by Middle‐Energy Ion Beams for Selective Cell Adhesion in Microfluidic Devices

AbstractMicrofluidic devices play a crucial role in advanced cell biology applications, including cell separations, cultivations, migration and interaction studies, diagnostic devices, and organ‐on‐chips. One of the frequent purposes of such devices is the ability to selectively address the attachment of cells at defined locations on the surface. This study explores the application of middle‐energy carbon, oxygen, and nitrogen ions to locally modify the surface of cyclic olefin copolymer (COC) thermoplastic material, allowing selective cell growth on patterned polymer surfaces. The investigation considers ion element type, ion beam energy, and ion irradiation fluence, analyzing their influence on the modification effect. Characterization of the modified surfaces involves various surface‐analytical methods such as contact angle, energy dispersive spectroscopy (SEM‐EDX), atomic force microscopy (AFM), x‐ray photoelectron spectroscopy (XPS), rutherford backscattering spectrometry (RBS), and elastic recoil detection analysis (ERDA). The study extends to practical aspects, with a representative cancer cell line, MCF‐7, grown on the patterned surface to evaluate the degree of selective attachment. Additionally, the stability of the irradiated patterns is tested under elevated temperatures beyond the glass transition temperature (Tg), demonstrating the compatibility of the approach with hot embossing technology. The findings underscore the potential of ion beam treatment for COC in cell‐biology‐related applications, offering insights into surface modification techniques for enhanced functionality in microfluidic devices.

Biological dose optimization incorporating intra-tumoural cellular radiosensitivity heterogeneity in ion-beam therapy treatment planning

Objective. Treatment plans of ion-beam therapy have been made under an assumption that all cancer cells within a tumour equally respond to a given radiation dose. However, an intra-tumoural cellular radiosensitivity heterogeneity clearly exists, and it may lead to an overestimation of therapeutic effects of the radiation. The purpose of this study is to develop a biological model that can incorporate the radiosensitivity heterogeneity into biological optimization for ion-beam therapy treatment planning. Approach. The radiosensitivity heterogeneity was modeled as the variability of a cell-line specific parameter in the microdosimetric kinetic model following the gamma distribution. To validate the developed intra-tumoural-radiosensitivity-heterogeneity-incorporated microdosimetric kinetic (HMK) model, a treatment plan with H-ion beams was made for a chordoma case, assuming a radiosensitivity heterogeneous region within the tumour. To investigate the effects of the radiosensitivity heterogeneity on the biological effectiveness of H-, He-, C-, O-, and Ne-ion beams, the relative biological effectiveness (RBE)-weighted dose distributions were planned for a cuboid target with the stated ion beams without considering the heterogeneity. The planned dose distributions were then recalculated by taking the heterogeneity into account. Main results. The cell survival fraction and corresponding RBE-weighted dose were formulated based on the HMK model. The first derivative of the RBE-weighted dose distribution was also derived, which is needed for fast biological optimization. For the patient plan, the biological optimization increased the dose to the radiosensitivity heterogeneous region to compensate for the heterogeneity-induced reduction in biological effectiveness of the H-ion beams. The reduction in biological effectiveness due to the heterogeneity was pronounced for low linear energy transfer (LET) beams but moderate for high-LET beams. The RBE-weighted dose in the cuboid target decreased by 7.6% for the H-ion beam, while it decreased by just 1.4% for the Ne-ion beam. Significance. Optimal treatment plans that consider intra-tumoural cellular radiosensitivity heterogeneity can be devised using the HMK model.

Attachment of Fibrinogen on Ion Beam Treated Polyurethane.

Protein-stable coverage of the artificial implant is a key problem for biocompatibility. In the present study, a protein layer was attached covalently to a polyurethane surface treated by an ion beam. A plasma system consisting of a vacuum chamber (0.8 Pa pressure) with a high voltage electrode powered by a short pulse (20 μS pulse duration and 200 Hz pulse repetition) generator was designed. Polyurethane with a formulation certified as a material for medical implants was treated by nitrogen ions with an energy of 20 keV and 5 × 1014-1016 ions/cm2 fluence range. Wettability measurements, X-ray photoelectron, Raman, Fourier transform infrared attenuated total reflection, and ellipsometry spectra showed a significant change in the structure of the surface layer of the treated polyurethane. The surface of the treated polyurethane contained a carbonised layer containing condensed aromatic clusters with terminal free radicals. The surface energy of polyurethane surface increased from 33 to 65 mJ/m2. The treated polyurethane surface became capable of adsorbing and chemically binding protein (fibrinogen). The designed system for ion beam treatment can be used for surface activation of biomedical polymer devices, where a total protein coverage is required.

Erratum to: Physicochemical Properties and Functional Characteristics of a Tungsten-Free Hard Alloy in the TiC–TiNi System after Ion-Beam Treatment

Erratum to: Physicochemical Properties and Functional Characteristics of a Tungsten-Free Hard Alloy in the TiC–TiNi System after Ion-Beam Treatment

Nanodosimetric quantity-weighted dose optimization for carbon-ion treatment planning.

Dose verification of treatment plans is an essential step in radiotherapy workflows. In this work, we propose a novel method of treatment planning based on nanodosimetric quantity-weighted dose (NQWD), which could realize biological representation using pure physical quantities for biological-oriented carbon ion-beam treatment plans and their direct verification. The relationship between nanodosimetric quantities and relative biological effectiveness (RBE) was studied with the linear least-squares method for carbon-ion radiation fields. Next, under the framework of the matRad treatment planning platform, NQWD was optimized using the existing RBE-weighted dose (RWD) optimization algorithm. The schemes of NQWD-based treatment planning were compared with the RWD treatment plans in term of the microdosimetric kinetic model (MKM). The results showed that the nanodosimetric quantity F3 - 10 had a good correlation with the radiobiological effect reflected by the relationship between RBE and F3 - 10. Moreover, the NQWD-based treatment plans reproduced the RWD plans generally. Therefore, F3 - 10 could be adopted as a radiation quality descriptor for carbon-ion treatment planning. The novel method proposed herein not only might be helpful for rapid physical verification of biological-oriented ion-beam treatment plans with the development of experimental nanodosimetry, but also makes the direct comparison of ion-beam treatment plans in different institutions possible. Thus, our proposed method might be potentially developed to be a new strategy for carbon-ion treatment planning and improve patient safety for carbon-ion radiotherapy.

Two-step ion beam treatment for superhydrophilic fluorinated polymers

Plasma treatment is a widely used simple and ecofriendly method to improve the surface wettability of polymers. However, this is challenging for fluorinated polymers because of their robust CF bonds with low surface energies. Here, we demonstrated a simple approach, involving Ar-H2 and O2-H2 two-step ion beam treatments, to achieve superhydrophilic fluorinated polymer surfaces. The effects of surface roughness and chemical composition on the water contact angle (WCA) were studied using X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. After the single H2 ion beam treatment on fluorinated ethylene propylene films, the WCA decreased from 110.2° to 35.2° due to defluorination and oxidation effects. However, the H2 ion beam treatment alone has a limited effect on the root-mean-square (RMS) roughness, which hinders achieving superhydrophilicity. In contrast, the WCA significantly decreased to 1.3° and 1.2°, respectively after the Ar-H2 and O2-H2 two-step ion beam treatments. Although the chemical composition after these treatments was similar to that after the single H2 ion beam treatment, the RMS roughness increased upon the Ar and O2 ion beam treatments because of the formation of nanostructures. Our results show that nanostructures with abundant polar oxygen bonds are required to obtain superhydrophilic surfaces in fluorinated polymers.

Analysis of the improved mechanism of Rhodobacter sphaeroides VK-2-3 coenzyme Q10 by reverse metabolic engineering.

Coenzyme Q10 (CoQ10) is an essential medicinal ingredient. In this study, we obtained a high-yielding mutant strain of CoQ10, VK-2-3, by subjecting R. sphaeroides V-0 (V-0) to a 12C6+ heavy ion beam and high-voltage prick electric field treatment. To investigate the mutation mechanism, the complete genomes of VK-2-3 and V-0 were sequenced. Collinearity analysis revealed that the nicotinamide adenine dinucleotide-dependent dehydrogenase (NAD) gene underwent rearrangement in the VK-2-3 genome. The NAD gene was overexpressed and silenced in V-0, and this construct was named RS.NAD and RS.ΔNAD. The results showed that the titers of CoQ10 in the RS.NAD and RS.ΔNAD increased and decreased by 16.00 and 33.92%, respectively, compared to those in V-0, and these differences were significant. Our results revealed the mechanism by which the VK-2-3 CoQ10 yield increases through reverse metabolic engineering, providing insights for genetic breeding and mechanistic analysis.

Получение и исследование плёнок нитрида алюминия

Aluminum nitride films were produced on substrates of quartz, glass, aluminum and steel by reactive RF magnetron sputtering and ion–beam processing. The thickness of aluminum nitride coatings decreases with increasing current of ion-beam processing from 1700 to 650 Å. According to the energy dispersive analysis of films on steel and aluminum substrates, the nitrogen concentration increases with increasing current of ion-beam treatment. The X-ray phase analysis of the resulting films has shown that aluminum nitride films are X-ray amorphous. Aluminum nitride films are highly transparent. An increase in the refractive index of the films from 1.74 to 1.80 (for wavelength λ = 586 nm) and band gap from 5.32 to 5.61 eV with increasing current of ion-beam treatment was revealed. The band gap and refractive index values correlate satisfactorily with the literature data for aluminum nitride. Electron and atomic force microscopy has shown that aluminum nitride films are homogeneous and smooth. Roughness decreases with the introduction of ion-beam processing. It is found that the microhardness of the films deposited on aluminum substrates has increased by a factor of 1.5, and a 2.2 fold increase has been observed for the microhardness of the films deposited on steel substrates t. The maximum increase in microhardness is observed at the current of ion-beam processing of 40 mA.

Surface Engineering of Multi-Walled Carbon Nanotubes via Ion-Beam Doping: Pyridinic and Pyrrolic Nitrogen Defect Formation

In this study, we present an innovative ion-beam doping technique for the controlled modification of the near-surface region of multi-walled carbon nanotubes (MWCNTs) aimed at creating pyridinic and pyrrolic nitrogen defects in their walls. This method involves the irradiation of MWCNTs with nitrogen ions using a high-dose ion implanter, resulting in the incorporation of nitrogen atoms into the nanotube structure. The structural and chemical changes induced by the ion-beam treatment were thoroughly characterized. Scanning electron microscopy (SEM) analysis revealed subtle changes in nanotube morphology, while X-ray diffraction (XRD) measurements exhibited altered peak intensities and a shift in the (002) reflection peak, indicating structural modifications, which correlates with transmission electron microscopy (TEM) data. X-ray photoelectron spectroscopy (XPS) analysis confirmed the successful embedding of nitrogen, mainly in pyridinic and pyrrolic configurations, as evidenced by the presence of corresponding lines in the N1s spectrum. Our findings demonstrate the feasibility of precisely engineering nitrogen defects in MWCNTs using the ion-beam doping technique. This approach is expected to be promising for the use of carbon nanotubes surface-functionalized with nitrogen atoms in the development of new devices for electronics, electrochemistry, catalysis, etc.

Physicochemical Properties and Functional Characteristics of a Tungsten-Free Hard Alloy in the TiC–TiNi System after Ion-Beam Treatment

Physicochemical Properties and Functional Characteristics of a Tungsten-Free Hard Alloy in the TiC–TiNi System after Ion-Beam Treatment

Accelerated neutral atom beam (ANAB) and gas clustered ion beam (GCIB) treatment of implantable device polymers leads to decreased bacterial attachment in vitro and decreased inflammation in vivo

Accelerated neutral atom beam (ANAB) and gas clustered ion beam (GCIB) treatment of implantable device polymers leads to decreased bacterial attachment in vitro and decreased inflammation in vivo

Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam

We reveal a novel phenomenon observed after self-catalytic growth of GaAs nanowires (NWs) on Si(111) substrates treated with a Ga focused ion beam (FIB). Depending on the ion dose, NW arrays with various geometrical parameters can be obtained. A minor treatment of the substrate enables a slight increase in the surface density of NWs relative to an unmodified substrate area. As the ion dose is increased up to ∼0.1 pC μm−2, the growth of GaAs NWs and nanocrystals is suppressed. However, a further increase in the ion dose stimulates the crystal growth leading to the formation of extremely thin NWs (39 ± 5 nm) with a remarkably high surface density of up to 15 μm−2. Resting upon an analysis of the surface structure before and after stages of ion-beam treatment, ultra-high vacuum annealing and NW growth, we propose a mechanism underlying the phenomenon observed. We assume that the chemical interaction between embedded Ga ions and a native Si oxide layer leads either to the enhancement of the passivation properties of the oxide layer within FIB-modified areas (at low and middle ion doses), or to the etching of the passivating oxide layer by excess Ga atoms, resulting in the formation of pores (at high ion doses). Due to this behavior, local fabrication of GaAs NW arrays with a diverse range of characteristics can be implemented on the same substrate. This approach opens a new way for self-catalytic growth of GaAs NWs.

Multi‐modified epoxy insulation with improved flashover threshold for HVDC applications

AbstractThe flashover threshold (Vflsh) of polymer insulations such as epoxy (EP) in HVDC systems can be augmented by modifying their surface with an appropriate treatment technology. For such purpose, several surface treatment methods such as ion beam, sandpaper and a combination of the two is introduced. Firstly, insulation samples with pure epoxy (EPpure), different ion beam treatment periods (EPion;10, 15, 20 min) and different roughness (EPsand; R1 = 4.23 μm, R2 = 6.34 μm, R3 = 9.21 μm) are prepared on the laboratory scale. Afterward, based on several characterisations, such as surface conductivity, mean surface roughness and potential distribution of these insulations, multi‐modified insulation (EPmulti = EPion‐20 + EPsand‐R3) is prepared. In the end, the Vflsh of each insulation group is measured and compared to examine the effectiveness of the proposed modifications. It is obtained that the Vflsh of the modified insulations augmented dramatically irrespective of the treatment method. The Vflsh of the insulation group EPmulti augmented by 52.66 % which is the highest improvement among all insulation groups. In short, the proposed surface modifications are effective and could be used as references to enhance the insulation strength of polymer dielectrics in HVDC systems.

Ultra-thin silver films grown by sputtering with a soft ion beam-treated intermediate layer

Silver thin films have wide-ranging applications in optical coatings and optoelectronic devices. However, their poor wettability to substrates such as glass often leads to an island growth mode, known as the Volmer–Weber mode. This study demonstrates a method that utilizes a low-energy ion beam (IB) treatment in conjunction with magnetron sputtering to fabricate continuous silver films as thin as 6 nm. A single-beam ion source generates low-energy soft ions to establish a nominal 1 nm seed silver layer, which significantly enhances the wettability of the subsequently deposited silver films, resulting in a continuous film of approximately 6 nm with a resistivity as low as 11.4 µΩ.cm. The transmittance spectra of these films were found to be comparable to simulated results, and the standard 100-grid tape test showed a marked improvement in adhesion to glass compared to silver films sputter-deposited without the IB treatment. High-resolution scanning electron microscopy images of the early growth stage indicate that the IB treatment promotes nucleation, while films without the IB treatment tend to form isolated islands. X-ray diffraction patterns indicate that the (111) crystallization is suppressed by the soft IB treatment, while growth of large crystals with (200) orientation is strengthened. This method is a promising approach for the fabrication of silver thin films with improved properties for use in optical coatings and optoelectronics.

Ion-Beam Surface Modification of Carbon Fibers

Carbon fibers are used in the production of automobiles, airplanes, sporting goods, energy, and biomedicine due to their unique properties such as high specific strength, high specific tensile strength, low coefficient of thermal expansion, and low density. The research and development of both the technology of carbon fibers production and their modification for a wide range of applications have been and remain relevant. The summary of the accumulated experience in the modification of carbon fibers shows that ion-beam treatment allows to obtain a variety of geometry of the developed surface topography, in particular, whisker-shaped and corrugated oriented across or along the fiber. Such processing compares favorably with ordinary fiber whiskering both by a variety of geometry of the composite interface, and by the absence of the problem of whisker-fiber adhesion. Ion-beam treatment also makes it possible to modify the surface layer structure from amorphized to ordered with different degrees of graphitization. Irradiation with chemically active ions leads to functionalization of carbon fiber due to formation, for example, of nitrides and carbon oxides. The choice of nitrogen ions for the technology of carbon-carbon and carbon-ceramic composites seems to be more preferable due to less stringent requirements for the temperature of the irradiated fiber. For ion-beam corrugation of polyacrylonitrile-based carbon fiber surface, only its heating above the temperature of dynamic annealing of radiation damage is required. The use of helium ions in technological plasma acceleration systems leads to a significant efficiency increase in ion-beam processing.

True Nonvolatile High-Speed DRAM Cells Using Tailored Ultrathin IGZO.

Severe power consumption in the continuous scaling of Silicon-based dynamic random access memory (DRAM) technology quests for a transistor technology with a much lower off-state leakage current. Wide bandgap amorphous oxide semiconductors, especially indium-gallium-zinc-oxide (IGZO)exhibit many orders of magnitude lower off-state leakage. However, they are typically heavily n-doped and require negative gate voltage to turn off, which prevents them from true nonvolatile operation. The efforts on doping density reduction typically result in mobility degradation and high Schottky barriers at contacts, causing severe degradation of on-current and operation speed of the DRAM cells. Here, high-speed true nonvolatile DRAM cells are successfully demonstrated by deep suppression of doping density in the IGZO channel using in situ oxygen ion beam treatment and ohmic contact engineering by inserting a thin In-rich indium-tin-oxide (ITO) at contact regions. A record high on-current of 40µA µm-1 at a large positive threshold voltage of 1.78V enables the first true nonvolatile DRAM with the fastest write speed of 10ns and data retention up to 25 h under power interruption, five orders of magnitude higher than the previously projected values.

Top-down patterning of topological surface and edge states using a focused ion beam

The conducting boundary states of topological insulators appear at an interface where the characteristic invariant ℤ2 switches from 1 to 0. These states offer prospects for quantum electronics; however, a method is needed to spatially-control ℤ2 to pattern conducting channels. It is shown that modifying Sb2Te3 single-crystal surfaces with an ion beam switches the topological insulator into an amorphous state exhibiting negligible bulk and surface conductivity. This is attributed to a transition from ℤ2 = 1 → ℤ2 = 0 at a threshold disorder strength. This observation is supported by density functional theory and model Hamiltonian calculations. Here we show that this ion-beam treatment allows for inverse lithography to pattern arrays of topological surfaces, edges and corners which are the building blocks of topological electronics.

Электрохимические свойства и структура поверхностных слоев TiNi сплава после имплантации ионов титана и ниобия

The surface morphology, structure of oxide layers and electrochemical properties in a physiological solution (0.9 wt. % NaCl) of nickel titanium (TiNi) alloy subjected by ion implantation were studied. It was found that an irradiation of the TiNi surface with titanium and niobium ions at an irradiation dose of 1·1017 cm–2 led to the increase of the surface roughness and improvement of corrosion properties. The corrosion performance of ion-beam modified alloy was associated with a higher charge transfer resistance and a lower anodic current. Comparative analysis of the oxide layer structure, performed by transmission electron microscopy, and electrochemical properties revealed that an inhibiting of anodic processes was related with the phase composition and electrical conductivity of the oxide layer. In particular, the ion-beam treatment with niobium resulted in formation of a thin (~ 2 nm) amorphous oxide film onto the TiNi surface, that effectively prevented an oxidation of nickel due to dielectric properties characterized by dielectric constant ε = 44.