(a) A. F. Ioffe Institute of Physics and Technology, Russian Academy of Sciences,Polytekhnicheskaya 26, 194021 St. Petersburg, Russia(b) Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180, USA(c) Department of ECE, University of South Carolina, Columbia,South Carolina 29208, USA(d) Microelectronics Laboratory, University of Illinois, Urbana, Illinois 61801, USA(Received July 4, 1999)Experimental results of the low-frequency noise measurements on a large number of differentAlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on sapphire and SiC substrateshave been presented. In the HEMTs grown on sapphire, the 1=f noise is an order of magnitude(or more) higher than for AlGaN/GaN HEMTs grown on SiC substrates. The devices on SiC sub-strates also have higher electron mobility compared to the devices grown on sapphire substrates.The temperature dependence of noise reveals a contribution to the noise from a local level withactivation energy of approximately 0.42 eV for the structures grown on sapphire. A very weaktemperature dependence of the low-frequency 1=f noise found for the wafers grown on SiC is veryimportant for high temperature applications of these devices.
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