InxGa1 xN Research Articles

MOVPE Growth of In-Rich InxGa1—xN (0.5 < x < 1) Films on α-Al2O3(0001)

This paper reports MOVPE growth of In-rich InxGa1—xN films with x = 0.5 to 1.0 on α-Al2O3(0001) at temperatures from 550 to 700 °C. The θ–2θ X-ray diffraction analysis shows that single phase films of x = 0.5 to 1 are successfully grown by lowering the growth temperature to 550 °C. With decreasing x, the surface roughness of the films is decreased and striped features appear on the surface. When the growth temperature is increased up to 600 °C or higher, a single phase film is obtained only for x > 0.8. Even a film with multi-peaks in the X-ray diffraction pattern shows no rings in the RHEED pattern. A film grown at 550 to 600 °C with x ≈ 0.5 has additional spots in its RHEED pattern. Such a pattern is very similar to that expected for a mixture of wurtzite and zincblende crystals.