Investigation Of Defect States Research Articles

Investigation of defect states in AlGaN/GaN high electron mobility transistors by small-signal admittance analysis

We have performed a small-signal admittance analysis to extract trap parameters in an AlGaN/GaN high electron mobility transistor-on-Si. Whereas the admittance in the accumulation- and depletion-bias regimes is primarily due to the interface traps, the admittance near the threshold voltage and below is due to mono-energetic traps inside GaN. The density extracted for threading dislocation-related 1D traps at ≈0.22 eV below the GaN conduction band edge is similar to that previously reported by reverse-biased gate leakage analysis of the analyzed device. Our analysis suggests additional 1D traps of comparatively lower density ≈4×1014cm−3 but considerably large capture cross section ≈8×10−14cm2 in the GaN layer at ≈0.31 eV below the conduction band. The AlGaN trap density is considerably larger near the AlGaN/GaN interface than in the bulk AlGaN. The AlGaN traps mainly contribute to the voltage stretch; their admittance contribution is negligible. Gate leakage dominates the conductance at lower frequencies.

Investigation of defect states in light-irradiated single-crystal ZnO by low-temperature positron annihilation lifetime spectroscopy

Positron annihilation lifetime spectroscopy of single crystalline ZnO during light illumination has been performed in conjunction with electron spin resonance (ESR) to investigate defects related to persistent photoconductivity. The intensity of the ESR signal changes depending on the light wavelengths and the apparent positron lifetime during red-light illumination is approximately 6 ps lower on average than that during blue-light illumination. The results suggest that the excitation of V O during blue-light illumination increases positively ionized V O, while the relaxation of V O during red-light illumination decreases positively ionized V O, leading to a decrease in the apparent positron lifetime.

Unveiling the complex electronic structure of amorphous metal oxides

Amorphous materials represent a large and important emerging area of material’s science. Amorphous oxides are key technological oxides in applications such as a gate dielectric in Complementary metal-oxide semiconductor devices and in Silicon-Oxide-Nitride-Oxide-Silicon and TANOS (TaN-Al 2 O 3 -Si 3 N 4 -SiO 2 -Silicon) flash memories. These technologies are required for the high packing density of today’s integrated circuits. Therefore the investigation of defect states in these structures is crucial. In this work we present X-ray synchrotron measurements, with an energy resolution which is about 5–10 times higher than is attainable with standard spectrometers, of amorphous alumina. We demonstrate that our experimental results are in agreement with calculated spectra of amorphous alumina which we have generated by stochastic quenching. This first principles method, which we have recently developed, is found to be superior to molecular dynamics in simulating the rapid gas to solid transition that takes place as this material is deposited for thin film applications. We detect and analyze in detail states in the band gap that originate from oxygen pairs. Similar states were previously found in amorphous alumina by other spectroscopic methods and were assigned to oxygen vacancies claimed to act mutually as electron and hole traps. The oxygen pairs which we probe in this work act as hole traps only and will influence the information retention in electronic devices. In amorphous silica oxygen pairs have already been found, thus they may be a feature which is characteristic also of other amorphous metal oxides.

Investigation of defect states in the amorphous phase of phase change alloys GeTe and Ge2Sb2Te5

AbstractIn amorphous materials localized states within the band gap govern the electronic transport properties. This work presents the first measurement of the density of states within the band gap of amorphous phase change alloys using modulated photo current experiments. Modulated photo current measurements performed on a‐Ge50Te50 and a‐Ge2Sb2Te5 show that the defect state density of both compositions is quite similar consisting of a pronounced valence band tail and at least two defect states (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)