Broken Inversion Symmetry Research Articles

Prediction of the two-dimensional ferromagnetic semiconductor Janus 2H-ZrTeI monolayer with large valley and piezoelectric polarizations.

Two-dimensional room-temperature Janus ferrovalley semiconductors with valley polarization and piezoelectric polarization offer new perspectives for designing multifunctional nanodevices. Herein, using first-principles calculations, we predict that the Janus 2H-ZrTeI monolayer is an intrinsic ferromagnetic semiconductor with in-plane magnetic anisotropy and a Curie temperature of 111 K. The Janus ZrTeI monolayer possesses a significant valley polarization of 141 meV due to time-reversal and inversion symmetry breaking. Based on the valley-contrasting Berry curvature, the anomalous valley Hall effect can be observed under an in-plane electric field. Meanwhile, the breaking of the inversion symmetry and mirror symmetry results in large longitudinal and transverse piezoelectric coefficients. By applying biaxial strain, the Janus 2H-ZrTeI monolayer can also be transformed into a Weyl nodal line semimetal. Furthermore, bilayers of ZrTeI with AB and BA stacking configurations allow the coexistence of valley polarization and ferroelectricity, enabling the manipulation of magnetism, ferroelectric polarization, and valley polarization through interlayer sliding. Our work provides a platform for studying valley polarization, piezoelectricity, and multiferroic coupling, which is significant for the application of multifunctional devices.

Two-dimensional Janus antimony chalcohalides for efficient energy conversion applications

Specific functionalities at the nanoscale can emerge from the broken inversion symmetry in two-dimensional (2D) Janus monolayers.

First principles predictions of structural, electronic and topological properties of two-dimensional Janus Ti2N2XI (X = Br, Cl) structures.

Motivated by the report of the giant Rashba effect in ternary layered compounds BiTeX, we consider two Janus structured compounds Ti2N2XI (X = Br, Cl) of the same ternary family exhibiting a 1 : 1 : 1 stoichiometric ratio. Broken inversion symmetry in the Janus structure, together with its unique electronic structure exhibiting anti-crossing states formed between Ti-d states and strong spin-orbit coupled I-p states, generates large Rashba cofficients of 2-3 eV Å for these compounds, classifying them as strong Rashba compounds. The anti-crossing features of the first-principles calculated electronic structure also result in non-trivial topology, combining two quantum phenomena - Rashba effect and non-trivial topology - in the same materials. This makes Janus TiNI compounds candidate materials for two-dimensional composite quantum materials. The situation becomes further promising by the fact that the properties are found to exhibit extreme sensitivity and tunability upon application of uniaxial strain.

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH.

The investigation and manipulation of valley pseudospin in promising two-dimensional (2D) semiconductors are essential for accelerating the development of valleytronics. Based on first-principles, we herein report that the WSeNH monolayer is a potential 2D valleytronic material. It is found that stable 2D WSeNH exhibits a semiconducting character with broken inversion symmetry, forming a pair of energy-degenerate but inequivalent valleys at the K and K' points. Arising from the strong spin-orbit coupling strength governed by the W-dxy/dx2-y2 orbitals, it exhibits a large valley splitting of 425 meV at the top of the valence band, which makes it highly plausible for generating the attractive valley Hall effect. Moreover, both valley splitting and optical transition energy can be efficiently modulated by external strain. Furthermore, we find that a considerable valley polarization of 23 meV can be readily realized in 2D WSeNH by introducing hydrogen vacancies. These findings not only broaden the family of 2D valleytronic materials but also provide alternative avenues for valley manipulation.

Large valley splitting induced by spin-orbit coupling effects in monolayer W2NSCl.

Two-dimensional (2D) valley materials are promising materials for writing and storing information. The search for 2D materials with large valley splitting is essential for the development of spintronics and valley electronics. In this study, we theoretically design 2D W2NSCl MXenes with large valley splitting based on first-principle calculations. Due to the strong spin-orbit coupling (SOC) and the broken inversion symmetry, the W2NSCl monolayer exhibits valley splitting values of 491 meV and 83 meV at K/K' of the valence and conduction bands, respectively. The valley splitting of W2NSCl is robust to biaxial strain. Because of the broken mirror symmetry of W2NSCl, there is a Rashba effect at Γ with a Rashba parameter of 1.019 V Å. Based on the maximum localization of the Wannier function, we found the non-zero Berry curvature at K/K'. Furthermore, the non-zero Berry curvature at the K/K' valley increases monotonically with an external strain from -4% to 4%. Our finding shows that W2NSCl is a candidate material for valley electronics and spintronics applications.

Rhombohedrally stacked layered transition metal dichalcogenides and their electrocatalytic applications.

Layered transition metal dichalcogenides (TMDCs) are extensively investigated as catalyst materials for a wide range of electrochemical applications due to their high surface area and versatile electronic and chemical properties. Bulk TMDCs are van der Waals solids that possess strong in-plane bonding and weak inter-layer interactions. In the few-layer 2D TMDCs, several polymorphic structures have been reported as each individual layer can either retain octahedral or trigonal prismatic coordination. Among them, 1T (tetragonal), 2H (hexagonal) and 3R (rhombohedral) phases are very common. These polymorphs can display discrepancies in their catalytic activity as their electronic structure diverges due to different d orbital filling states. The broken inversion symmetry and large exposed edge sites of some of the 3R-phase TMDCS such as MoS2, NbS2 and TaS2 appear to be advantageous for electrocatalytic water reduction and battery applications. We describe recent studies in phase engineering of 2D TMDCs, particularly aiming at the 3R polytype and their electrocatalytic properties. Redox ability primarily depends on a distinct polymorphic phase in which TMDCs are isolated, and hence, with rich polymorphic structures being reported, numerous new catalytic applications can be realized. Phase conversion from 2H to 3R phase in some TMDCs enhances structural integrity and establishes robustness under harsh chemical conditions.

Sign-flipping intrinsic anomalous Hall conductivity with Berry curvature tunability in a half-metallic ferromagnet NbSe2-VSe2 lateral heterostructure.

Single-layer half-metal magnets offer exciting scope in spin electronic quantum applications owing to improved spin transport, reduced interfacial resistance and streamlined device fabrication. Herein, we report the emergence of sign-flipping intrinsic anomalous Hall conductivity (AHC) as a result of changes in Berry curvature under an external electric field and half metallicity in a lateral heterostructure composed of centrosymmetric metallic monolayers 1T-NbSe2 and 1T-VSe2. The metallic monolayers 1T-NbSe2 and 1T-VSe2 laterally interfaced along the zigzag orientation break inversion symmetry at the interface and result in distinctive Berry curvature features. Furthermore, the half-metallic character was prominent with gapped states in the spin-up channel, while the spin-down state remained conductive; we observed the unique manifestation of sign-flipping intrinsic AHC at the Fermi level in addition to the electron- and hole-doped regions. This sign-flipping aspect of AHC at the Fermi level is of fundamental importance from the prospect of real-time device applications as it eliminates the necessity of supplementary actions, such as doping and strain engineering, which are traditionally employed to achieve AHC sign reversal. Additionally, a phase transition from half metal to metal occurs at a field of 0.5 V Å-1 and beyond. Half metallicity with sign switching AHC via external electric field makes the lateral NbSe2-VSe2 heterostructure a potential candidate for real-time energy-efficient low-power spintronic devices.

Extended free-energy functionals for achiral and chiral ferroelectric nematic liquid crystals: theory and simulation.

Polar nematic liquid crystals are new classes of condensed-matter states, where the inversion symmetry common to the traditional apolar nematics is broken. Establishing theoretical descriptions for the novel phase states is an urgent task. Here, we develop a Landau-type mean-field theory for both the achiral and chiral ferroelectric nematics. In the polar nematic states, the inversion symmetry breaking adds three new contributions: an additional odd elastic term (corresponding to the flexoelectricity in symmetry) to the standard Oseen-Frank free energy, electrostatic effect and an additional Landau term relating to the gradient of local polarization. The coupling between the scalar order parameter and polarization order should be considered. In the chiral and polar nematic state, we reveal that the competition between the twist elasticity and polarity dictates effective compressive energy arising from the quasi-layer structure. The polarization gradient is an essential term for describing the ferroelectric nature. Besides, we successfully simulate an experimentally reported structural transition in ferroelectric nematic droplets from a concentric-vortex-like to a line-disclination-mediated topology based on the developed theory. The approaches provide theoretical foundations for testing and predicting polar structures in emerging polar liquid crystals.

Enhancement and modulation of valley polarization in Janus CrSSe with internal and external electric fields.

The valley polarization, induced by the magnetic proximity effect, in monolayer transition metal dichalcogenides (TMDCs), has attracted significant attention due to the intriguing fundamental physics. However, the enhancement and modulation of valley polarization for real device applications is still a challenge. Here, using first-principles calculations we investigate the valley polarization properties of monolayer TMDCs CrS2 and CrSe2 and how to enhance the valley polarization by constructing Janus CrSSe (with an internal electric field) and modulate the polarization in CrSSe by applying external electric fields. Janus CrSSe exhibits inversion symmetry breaking, internal electric field, spin-orbit coupling, and compelling spin-valley coupling. A magnetic substrate of the MnO2 monolayer can induce a modest magnetic moment in CrSe2, CrSe2, and CrSSe. Notably, the Janus structure with an internal electric field has a much larger valley p compared with its non-Janus counterparts. Moreover, the strength of valley polarization can be further modulated by applying external electric fields. These findings suggest that Janus materials hold promise for designing and developing advanced valleytronic devices.

Broken Inversion Symmetry in Van Der Waals Topological Ferromagnetic Metal Iron Germanium Telluride.

Inversion symmetry breaking is critical for many quantum effects and fundamental for spin-orbit torque, which is crucial for next-generation spintronics. Recently, a novel type of gigantic intrinsic spin-orbit torque is established in the topological van der Waals(vdW) magnet iron germanium telluride. However, it remains a puzzle because no clear evidence exists for interlayer inversion symmetry breaking. Here, the definitive evidence of broken inversion symmetry in iron germanium telluride directly measured by the second harmonic generation (SHG) technique is reported. The data show that the crystal symmetry reduces from centrosymmetric P63/mmc to noncentrosymmetric polar P3m1 space group, giving the threefold SHG pattern with dominant out-of-plane polarization. Additionally, the SHG response evolves from an isotropic pattern to a sharp threefold symmetry upon increasing Fe deficiency, mainly due to the transition from random defects to ordered Fe vacancies. Such SHG response is robust against temperature, ensuring unaltered crystalline symmetries above and below the ferromagnetic transition temperature. These findings add crucial new information to the understanding of this interesting vdW metal, iron germanium telluride: band topology, intrinsic spin-orbit torque, and topological vdW polar metal states.

Electric Tuning of Vortex Ratchet Effect in NbSe2.

Inversion symmetry breaking has played an important role in recent discoveries of nonreciprocal charge transport. Niobium diselenide, for example, lacks an inversion center in the monolayer form and can host prominent nonreciprocal transport property. Here, however, we observe a nonreciprocal transport signal in the second-harmonic channel of bulk-like NbSe2, in which inversion symmetry of the lattice seems preserved. The second-harmonic signal occurs along different in-plane current orientations and appears not only in the vortex-liquid regime but also even in the superconducting fluctuation regime without an applied magnetic field. By adding a direct current (DC) bias, we quantify the symmetry breaking effect in the vortex-liquid regime. The DC bias also suggests that the rectification effect at the contacts may account for the seemingly nonreciprocal transport at zero magnetic field. Our results demonstrate that DC biasing is a useful knob for addressing nonreciprocal charge transport in a wide range of materials.

Intraband Exciton Transitions in Photosynthetic Complexes Revealed by Novel Five-Wave-Mixing Spectroscopy.

We calculate the χ(4) optical response of an oriented photosystem II reaction center of purple bacteria described by the Frenkel exciton model using nonlinear exciton equations (NEE). This approach treats each chromophore as an anharmonic oscillator and provides an intuitive quasiparticle picture of nonlinear spectroscopic signals of interacting excitons. It provides a computationally powerful description of nonlinear spectroscopic signals that avoids complete diagonalization of the total Hamiltonian. Expressions for the second- and the fourth-order nonlinear signals are derived. The NEE have been successfully employed in the past to describe even-order-wave-mixing. Here, we extend them to aggregates with broken inversion symmetries. Even-order susceptibilities require the introduction of permanent dipoles, which allow to directly probe low-frequency intraband transitions of excitons.

Atomic Diffusion-Induced Polarization and Superconductivity in Topological Insulator-Based Heterostructures.

The proximity effect at a highly transparent interface of an s-wave superconductor (S) and a topological insulator (TI) provides a promising platform to create Majorana zero modes in artificially designed heterostructures. However, structural and chemical issues pertinent to such interfaces have been poorly explored so far. Here, we report the discovery of Pd diffusion-induced polarization at interfaces between superconductive Pd1+x(Bi0.4Te0.6)2 (xPBT, 0 ≤ x ≤ 1) and Pd-intercalated Bi2Te3 by using atomic-resolution scanning transmission electron microscopy. Our quantitative image analysis reveals that nanoscale lattice strain and QL polarity synergistically suppress and promote Pd diffusion at the normal and parallel interfaces, formed between Te-Pd-Bi triple layers (TLs) and Te-Bi-Te-Bi-Te quintuple layers (QLs), respectively. Further, our first-principles calculations unveil that the superconductivity of the xPBT phase and topological nature of the Pd-intercalated Bi2Te3 phase are robust against the broken inversion symmetry. These findings point out the necessity of considering the coexistence of electric polarization with superconductivity and topology in such S-TI systems.

Terahertz tunable band-stop filter using topological valley photonic crystals.

In recent years, there has been a growing interest in the wideband propagation and control of terahertz (THz) radiation due to its potential for a variety of applications, such as 6G communication, sensing, and imaging. One promising approach in this area is the use of valley photonic crystals (VPCs), which exhibit properties like wider band gaps and robust propagation. In this paper, a two-dimensional dielectric silicon-air VPC is studied, which is constructed from a method of inversion symmetry breaking providing a band gap of 109.4GHz at a mid-gap frequency of 0.376THz. We employ an optimized bearded-stack interface to construct the VPC waveguide for wideband THz propagation along straight and Z-shaped paths. We demonstrate that a band-stop response can be achieved in a VPC by introducing periodic defects along the domain wall. Furthermore, the stop range can be tuned by varying the refractive index of the defects through incorporating liquid crystal along the domain wall of VPC. Our proposed structure and the techniques employed could be promising for the development of a band-stop filter (BSF) and other photonic components having potential applications in 6G communication and beyond.

Reduction of Operating Current by Harnessing the Field‐ and Damping‐Like Torque Ratios in Nonmagnet–Ferromagnet Heterojunctions

With the growing demand for high‐speed electronic devices with low energy consumption, spin–orbit torque (SOT) has become a significant focus. SOT can switch the magnetization direction in a material system with broken inversion symmetry, such as a normal metal (NM)/ferromagnet (FM) heterojunction. The SOT consists of two mutually orthogonal vector components along with the injected current direction: the transverse damping‐like torque (DLT) and the longitudinal field‐like torque (FLT). Numerous studies have mainly centered on the DLT for the SOT switching mechanism. However, DLT and FLT are essential to enhance SOT efficiency because FLT boosts the magnetization precession motion. Herein, heterojunctions consisting of NM 1 (Ta, W, or Pt)/NM 2 (Nb)/FM (CoFeB) are devised to manipulate the FLT‐to‐DLT ratio (η) through the change in Nb thickness. Furthermore, experimental confirmation exists for reducing threshold current as η increases. The SOT devices with substantial η generate random numbers. The National Institute of Standards and Technology Special Publication 800‐90B test verifies randomness and confirms that the SOT devices are beneficial sources for true random number generators (TRNGs). These findings indicate the crucial role of FLT in the SOT switching process and underscore its significance in developing SOT‐based TRNG devices.

Rol' vakansiy v spin-zhidkostnoy modeli Yao–Li

We consider the effect of vacancies on the low-energy excitation spectrum of a quantum spin liquid realized in the exactly solvable Yao–Lee model [H. Yao and D.-H. Lee, Phys. Rev. Lett. 107, 087205 (2011)]. Physically, vacancies can appear for different reasons (e.g., because of zero magnetic moments on the lattice, or the presence of nonmagnetic impurities, or a random reduction of local bonds of magnetic moments with the remaining lattice). It is shown numerically that the finite density of random vacancies in this model leads to the accumulation of states near zero energy, which can be detected from the change of the behavior of heat capacity at low temperatures. Moreover, it is shown that the low-energy modes are localized more strongly than remaining eigenmodes. This effect is illustrated using the inverse participation ratio (IPR). In the case of time reversal symmetry breaking (e.g., due to the presence of a magnetic field), a gap is opened in the fermion spectrum of the model, and vacancy-induced localized states appear. The energies of these states depend on the structure of the interactions responsible for the time inversion symmetry breaking.

Room-Temperature, Current-Induced Magnetization Self-Switching in A Van Der Waals Ferromagnet.

2D layered materials with broken inversion symmetry are being extensively pursued as spinsource layers to realize high-efficiency magnetic switching. Such low-symmetry layered systems are, however, scarce. In addition, most layered magnets with perpendicular magnetic anisotropy show a low Curie temperature. Here, the experimental observation of spin-orbit torque magnetization self-switching at room temperature in a layered polar ferromagnetic metal, Fe2.5 Co2.5 GeTe2 is reported. The spin-orbit torque is generated from the broken inversion symmetry along the c-axis of the crystal. These results provide a direct pathway toward applicable 2D spintronic devices.

Tunable ferroelectricity in oxygen-deficient perovskites with Grenier structure

Using first-principles calculations, we predict that tunable ferroelectricity can be realized in oxide perovskites with the Grenier structure and ordered oxygen vacancies. Specifically, we show that R1/3A2/3FeO2.67 solids (where R is a rare-earth ion and A an alkaline-earth cation) exhibit polar phases, with a spontaneous polarization tunable by an appropriate choice of R and A. We find that larger cations combined with small R elements lead to a maximum in the polarization and to a minimum in the energy barriers required to switch the sign of the polarization. Ferroelectricity arises from cooperative distortions of octahedral and tetrahedral units, where a combination of rotational and sliding modes controls the emergence of polarization within three-dimensional connected layers. Our results indicate that polar Grenier phases of oxide perovskites are promising materials for microelectronic applications and, in general, for the study of phenomena emerging from breaking inversion symmetry in solids.

Gauge Invariant Formulation of the Semiconductor Bloch Equations.

We derive gauge invariant semiconductor Bloch equations (GI-SBEs) that contain only gauge invariant band structure; shift vectors, and triple phase products. The validity and utility of the GI-SBEs is demonstrated in intense laser driven solids with broken inversion symmetry and nontrivial topology. The GI-SBEs present a useful platform for modeling and interpreting light-matter interactions in solids, in which the gauge freedom of the Bloch basis functions obscures physics and creates numerical obstacles.

Dynamics of skyrmion contraction and expansion in a magnetic film

Contraction and expansion of skyrmions in ferromagnetic films are investigated. In centrosymmetric systems, the dynamics of a collapsing skyrmion is driven by dissipation. The collapse time has a minimum on the damping constant. In systems with broken inversion symmetry, the evolution of skyrmions toward equilibrium size is driven by the Dzyaloshinskii–Moriya interaction. Expressions describing the time dependence of the skyrmion size are derived and their implications for skyrmion-based information processing are discussed.