Inverse Spin Hall Effect Research Articles

Self-Induced Spin Pumping and Inverse Spin Hall Effect in Single FePt Thin Films

Self-Induced Spin Pumping and Inverse Spin Hall Effect in Single FePt Thin Films

Spin injection from a magnetically near-compensated state in GdFeCo and inverse spin Hall effect in electron-hole compensated metal YH2.

Rare-earth-transition-metal (RE-TM) ferrimagnets are excellent materials for spin encode/decode operations via spin transport in nonmagnetic regions. This superior performance stems from two key factors. First, the antiferromagnetic coupling between RE4f and TM3d sublattices reduces both the spin-transfer-torque switching time and inter-device magnetic-coupling. Second, the RE-TM ferrimagnets function as spin injectors/ejectors, with the TM3d sublattice solely responsible for carrier spin polarization (p), similar to conventional ferromagnetic metals. We performed spin transport experiments using the sign change of p in RE-TM, which exhibits a positive value above the magnetization compensation temperature and a negative value below it. We measured temperature dependencies of the transverse resistances (RT) of electron-hole compensated metal YH2under out-of-plane spin-polarized current injection/ejection from GdFeCo (Gd:Fe:Co=25:66:9). The abrupt change in loop polarity of the out-of-plane field dependence of RT in YH2between 290 and 300 K, which aligns with the out-of-field curve of the polar Kerr rotation in GdFeCo electrodes, strongly suggests that the observed RT results from the inverse spin Hall effect (ISHE) in YH2. We analytically formulated ISHE in terms of the electron and hole spin currents injected from the spin sources, enabling regression analysis to assess the spin transport characteristics of a GdFeCo/YH2/GdFeCo magnetic double heterostructure. To explain the observed Hall voltages, enhancements in both the spin diffusion length of YH2and the spin injection efficiency are necessary.&#xD.

Spin conduction and interfacial effects in La2/3Sr1/3MnO3/NiO/Pt heterostructures

In this work we report on the generation and transport of pure spin currents in La2/3Sr1/3MnO3(LSMO)/NiO/Pt heterostructures. Pure spin currents, generated by means of spin pumping in the LSMO layer, are transmitted through the NiO layer and detected by measuring the transverse voltage signal generated by the inverse spin Hall effect (ISHE) in the Pt layer. The spin current transmission is studied as a function of the NiO thickness and temperature. NiO layers grown at room temperature are polycrystalline and their microstructural and magnetic features clearly depend on thickness. Scanning transmission electron microscopy techniques revealed that homogeneous conformal coating of the LSMO layer is only achieved for NiO layer thicknesses above about 2 nm. Below this critical thickness the NiO layer is discontinuous and its main role would be to disturb the LSMO/Pt interface causing it to behave as something similar to an insulating barrier. Magnetic measurements indicate that NiO layers are paramagnetic (PM) well below room temperature. In agreement with these observations, the amplitude of the ISHE voltage signal decreases monotonically on lowering temperature and makes evident that there are two spin conduction regimes as a function of the NiO layer thickness with different spin diffusion lengths. For thin discontinuous NiO layers a spin diffusion length of λSDL≈0.8 nm is found, which is slightly larger than typical values found for insulating barriers, but definitely smaller than λSDL≈3.8 nm found for NiO layer thickness above 2 nm. The latter being similar to λSDL previously reported for epitaxial NiO layers. Our findings indicate that inserting a PM NiO insulating layer of optimal thickness improves the spin transparency of the LSMO/Pt interface. Additionally, the results suggest that spin conduction through the NiO layer is likely driven by magnetic correlations and short-range thermal magnons.

Extraction of two-magnon scattering and detection of inverse spin Hall effect up to 40 GHz in low-damping Fe65Co35/Pt bilayer thin film

Abstract We report an investigation of the inverse spin Hall effect (ISHE), as a measure of the pure spin current (J S ), induced by spin pumping in a Fe65Co35/Pt bilayer using coplanar waveguide ferromagnetic resonance (CPW-FMR) in the in-plane (IP) geometry over the broadband microwave frequency range of 8–40 GHz. From the IP-FMR measurements, the defect-induced two-magnon scattering (TMS) contribution is evaluated by analyzing the frequency dependence of FMR linewidth using Arias and Mills approach [Arias R and Mills D L (1999 Phys. Rev. B 60, 7395), Mills D L and Arias R (2006 Physica B 384 147–151)]. Here, we have determined a very low Gilbert damping constant (α G ) for Fe65Co35 bare film around 1.3 × 10−3, which is essential for the high spin current (>107 A/m2) generation. The enhanced value of α G ≈3.2 × 10−3 obtained for Fe65Co35/Pt bilayer film is due to spin pumping damping, α SP = 1.9 × 10−3, confirmed by the ISHE induced DC voltage (V DC ) signal measured across the edges of Pt layer. Out-of-plane (OP) angular ISHE measurements have been performed to disentangle spin pumping from spin rectification effects in the V DC signal. Further, we evaluated the effective spin-mixing conductance g eff ↑ ↓ = 3.33 × 1019 m−2, which is higher than the values reported in FeCo-alloy-based bilayer systems. The present study aims to detect the J S injected by low-damping Fe65Co35 thin films, leading to the realization of energy-efficient spintronic devices.

Memcapacitors and Memristor Characteristics of ISGE-SOT and SHE-SOT Gain-Driven MoS2:Er Ferromagnets.

The enhancement of the spin-orbit torque (SOT) effect through the integration of intrinsic inverse spin galvanic effect spin-orbit torque and spin Hall effect spin-orbit torque is fundamentally dependent on the structural and material properties of the ferromagnets. Consequently, the synthesis of ferromagnets with superior structural integrity and material characteristics is of paramount importance. In this study, a gas-liquid chemical reaction, in conjunction with ultrasonic crushing, was employed to synthesize few-layer MoS2:Er nanosheets. X-ray diffraction, X-ray photoelectron spectroscopy, and energy-dispersive spectroscopy analyses confirm the successful substitution of Mo4+ by Er3+ through doping within the MoS2 lattice. Vibrating sample magnetometry and MT measurements indicate that MoS2:Er exhibits room-temperature ferromagnetism (RTFM), with the underlying mechanism elucidated through first-principles calculations. Furthermore, the unique electron density of states at the Fermi level suggests the presence of ferromagnetism in MoS2:Er. A wedge-shaped Pt/MoS2:Er/Au structure was fabricated and subsequently evaluated for current-induced SOT switching, as well as for its memcapacitor and memristor characteristics. The precession of a magnetic moment in three-dimensional space was successfully simulated by solving the Landau-Lifshitz-Gilbert-Slonczewski equation using the Mumax.

Hole and electron spin lifetime in lightly n-doped silicon at low temperatures

We report on photoinduced inverse spin-Hall effect (ISHE) measurements as a function of the incident photon energy in the 4–50 K temperature range for a Pt/n-doped Si junction. Optical spin injection allows generating a spin-oriented population of electrons and holes around the Δ valleys and Γ point of the Si Brillouin zone, respectively. Spin-polarized carriers cross the Pt/Si contact and then enter the Pt overlayer, where spin-to-charge conversion occurs by means of spin-dependent scattering with Pt nuclei. For temperatures T up to 20 K, most of the dopants are not ionized, so that the electric field, stemming from the contact potential between Pt and Si, extends to the whole Si substrate, which becomes insulating, and only spin-oriented holes reach the Pt layer and contribute to the ISHE spectra. For T>20 K, donors are partially ionized, and the resulting space charge close to the Pt/Si interface leads to the formation of a Schottky contact where the electric field rapidly vanishes within a few micrometers. As a consequence, also spin-polarized electrons enter Pt by means of thermionic emission, contributing to the ISHE signal. We numerically solve the one-dimensional spin drift-diffusion equations for holes and electrons and estimate the temperature dependence of the spin lifetime in Si for both populations, demonstrating that Si may serve as a versatile platform for spintronic applications, able to leverage both electrons and holes.

Circular photocurrents in centrosymmetric semiconductors with hidden spin polarization

Centrosymmetric materials with site inversion asymmetries possess hidden spin polarization, which remains challenging to be converted into spin currents because the global inversion symmetry is still conserved. This study demonstrates the spin-polarized circular photocurrents in centrosymmetric transition metal dichalcogenide semiconductors at normal incidence without applying electric bias. The global inversion symmetry is broken by using a spatially-varying circularly polarized light beam, which could generate spin gradient owing to the hidden spin polarization. The dependence of the circular photocurrents on electrode configuration, illumination position, and beam spot size indicates an emergence of circulating electric current under spatially inhomogeneous light, which is associated with the deflection of spin-polarized current through the inverse spin Hall effect. The circular photocurrents is subsequently utilized to probe the spin polarization and the inverse spin Hall effect under different excitation wavelengths and temperatures. The results of this study demonstrate the feasibility of using centrosymmetric materials with hidden spin polarization and non-vanishing Berry curvature for spintronic device applications.

Realizing Long Magnon Diffusion in Organic-Inorganic Hybrid Perovskite Film by the Universal Isotope Effect.

Organic-inorganic halide perovskite (OIHP) spintronics has become a promising research field, as it provides a new precisely manipulable degree of freedom. Recently, by utilizing the spin Seebeck effect and inverse spin-Hall effect measurements, we have discovered substantial magnon injection and transport in Pt/OIHP/Y3Fe5O12 nonlocalized structure. In theory, hyperfine interaction (HFI) is considered to have an important role in the magnon transport of OIHP, but there is no clear experimental evidence reported so far. We report increased spin Seebeck coefficient and lengthened magnon diffusion length in deuterated- (D-) OIHP films that have weaker HFI strength compared with protonated- (H-) OIHP. Consequently, D-MAPbBr3 film, as a non-ferromagnetic spacer, achieves long magnon diffusion length at room temperature (close to 120.3 nm). Our finding provides valuable insights into understanding magnon transport in OIHP films and paves the way for the use of OIHPs in multifunctional applications.

Unconventional exchange bias and enhanced spin pumping efficiency due to diluted magnetic oxide at the Co/ZnO interface

Exchange bias (EB) is normally created by the interfacial exchange coupling at a ferromagnetic/antiferromagnetic (FM/AFM) interface. FM/AFM interfaces have also been proved to perform enhanced spin angular momentum transfer efficiency in spin pumping (SP), compared with typical FM/nonmagnetic interfaces. Here, we report an unexpected EB and enhanced SP between a ferromagnet and semiconductor. Considerable EB has been observed in Co films grown on ZnO single crystal due to the interface antiferromagnetism of the Zn1−xCoxO (x depends on the Co solubility limit in ZnO) layer. Moreover, SP measurements demonstrate a giant spin pumping efficiency at the Co/ZnO interface with a bump (spin mixing conductance Geff↑↓= 28 nm−2) around the blocking temperature TB ∼ 75 K. The enhanced SP is further confirmed by inverse spin Hall effect measurements and the spin Hall angle θISHE of Zn1−xCoxO is estimated to be 0.011. The bound magnetic polarons with s–d exchange interaction between donor electrons and magnetic cation ions in Zn1−xCoxO play a key role in the formation of antiferromagnetism with giant Geff↑↓. Our work provides a new insight into spin physics at FM/semiconducting interfaces.

Ferroelectric Semimetals with α-Bi/SnSe van der Waals Heterostructures and Their Topological Currents.

We show that proximity effects can be utilized to engineer van der Waals heterostructures (vdWHs) displaying semimetallic spin-ferroelectricity locking, where ferroelectricity and semimetallic spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations involving α-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable nonlinear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis and first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.

Unusual inverse spin Hall effect in Pt/Co/Pt multilayers on single-crystalline YIG

The inverse spin Hall effect (ISHE) is a significant phenomenon that enables the conversion of spin current into charge current, offering promising applications in novel spintronic devices. In conventional ISHE measurements, it is widely recognized that the spin polarization, spin current, and generated charge current are mutually perpendicular. This study systematically investigates the ISHE in Pt/Co/Pt multilayers grown on a single-crystalline yttrium iron garnet (YIG) layer. A non-zero ISHE voltage was obtained along the direction parallel to the external magnetic field within the YIG coercive field range, deviating from the classical ISHE behavior. Our investigation revealed that the in-plane magnetic anisotropy of single-crystalline YIG plays a crucial role, as the easy axis of YIG and the external magnetic field collaboratively determine the polarization direction of the spin current, especially when the external magnetic field is smaller than the YIG coercive force. Furthermore, by tuning the small in-plane magnetization component of the Pt/Co/Pt multilayers, which couples with the YIG magnetization, we were able to control the shape and reversal path of the ISHE voltage loop. These findings deepen our understanding of how magnetic order affects charge current flow in ISHE measurements. The variety of ISHE voltage loop shapes and reversal paths observed suggest potential applications for this device as a magnetic field sensor.

Spin-to-charge conversion via dual-mode ferromagnetic resonance in Ta/NiFe/FeMn/CoFeB multilayer

The precise engineering of microwave absorption frequencies is of paramount importance in the advancement of spintronic-based RF devices. In the pursuit of this objective, magnetic thin films demonstrate unrivaled efficacy in enabling external modulation of their microwave responses in a reconfigurable manner. Here, we demonstrate dual-frequency ferromagnetic resonance modes and corresponding spin-to-charge conversion efficiency in thin film structures comprising Ta/NiFe/FeMn/CoFeB multilayer. A systematic thickness variation of the NiFe layer (i.e., 4–20 nm) has been undertaken to elucidate the impact on both static and dynamic properties across the multilayer structure. The presence of two distinct magnetic layers manifests in the emergence of two-step magnetic hysteresis loops, which are incorporated with unique resonant modes. The separation between the resonant fields shows tunable properties with excitation frequencies, thereby offering a wide range of reconfigurable operating parameters. The effective damping parameter has shown a decrement with increasing thickness of the NiFe layers. The effective spin mixing conductance for the NiFe layer was found to be 7.4 ± 0.6 nm−2. The spin-to-charge conversion within these structures has been demonstrated through measurements of the inverse spin Hall effect. Systematic thickness variation revealed that the prominent voltage drop was observed in the NiFe layer compared to the CoFeB layer. Considering the opposite spin Hall angles of Ta and FeMn layer, the direction of the spin flow and spin-to-charge conversion efficiency are summarized.

Separation of Inverse Altermagnetic Spin-Splitting Effect from Inverse Spin Hall Effect in RuO_{2}.

Recently, a significant amount of attention has been attracted toward a third classification of magnetism, altermagnetism, due to the unique physical properties of altermagnetic materials, which are compensated collinear antiferromagnets that host time-reversal symmetry-breaking phenomena like a ferromagnet. In an altermagnetic material, through the nonrelativistic altermagnetic spin-splitting effect (ASSE), a transverse spin current is generated upon charge current injection. However, it is very challenging to experimentally establish the ASSE since it is inevitably mixed with the spin Hall effect due to the relativistic spin-orbit coupling of the material. Additionally, the dependence on the hard-to-probe and hard-to-control Néel vectors makes it even more difficult to observe and establish the ASSE. In this Letter, we utilize the thermal spin injection from the ferrimagnetic insulator yttrium iron garnet and detect an inverse altermagnetic spin-splitting effect (IASSE) in the high-quality epitaxial altermagnetic RuO_{2} thin films. We observe an opposite sign for the spin-to-charge conversion through the IASSE compared to the inverse spin Hall effect (ISHE). The efficiency of the IASSE is approximately 70% of the ISHE in RuO_{2}. Moreover, we demonstrate that the ASSE or IASSE effect is observable only when the Néel vectors are well aligned. By modifying the Néel vector domains via RuO_{2} crystallinity, we study the ASSE or IASSE unequivocally and quantitatively. Our Letter provides significant insight into the spin-splitting effect in altermagnetic materials.

Inverse Spin Hall Effect Dominated Spin-Charge Conversion in (101) and (110)-Oriented RuO_{2} Films.

Utilizing spin pumping, we present a comparative study of the spin-charge conversion in RuO_{2}(101) and RuO_{2}(110) films. RuO_{2}(101) shows a robust in-plane crystal-axis dependence, whereas RuO_{2}(110) exhibits an isotropic but stronger one. Symmetry-based analysis and first-principles calculations reveal that the spin-charge conversion in RuO_{2}(110) originates from the inverse spin Hall effect (ISHE) due to nodal lines splitting. In RuO_{2}(101), the ISHE also dominates although the inverse spin splitting effect (ISSE) may coexist. These findings, in sharp contrast to previously attributed ISSE, are further corroborated by the reciprocal relation between the spin pumping and the spin-torque ferromagnetic resonance measurements.

Intrinsic and extrinsic relaxation mechanisms for controlling spin current intensity in Fe 100−x Co x /Ta bilayers

Controlling the damping parameter in metallic ferromagnetic thin films is a key step for spintronic applications in which spin currents are generated by spin pumping. The coexistence of two states with low and high damping constant values would allow to obtain states of high and low spin current intensity, respectively. We have fabricated Fe 100−x Co x /Ta (with nominal x = 0, 15, 20, 25, 30 and 35) bilayers in which the Fe 100−x Co x layers grow epitaxially and the Ta layer is polycrystalline. We have found the coexistence of Gilbert damping and two magnon scattering mechanisms linked to a sign change in the magnetocrystalline anisotropy constant that allows the manipulation of low and high intensity states of the measured inverse spin Hall effect voltage. Bilayers with lower Co concentrations ( x⩽ 25%) present different relaxation mechanisms (isotropic Gilbert damping and two magnon scattering) and an extra ferromagnetic resonance linewidth broadening produced due to mosaicity. Bilayers with Co concentration x> 25% present a dominating Gilbert damping for all directions in the film plane. However, in this concentration range the damping constant is anisotropic and when the magnetic field is applied along the hard magnetization direction α increases ∼420% with respect to the value obtained for the easy magnetization direction. Coexistence of isotropic Gilbert damping and two magnon scattering generated spin currents 2.5 times larger when the field is applied along the hard magnetization axis compared to the value observed in the easy magnetization axis. Thesefindings make the Fe 100−x Co x /Ta system an excellent candidate for spintronic device applications.

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets

Spin pumping has significant implications for spintronics, providing a mechanism to manipulate and transport spins for information processing. Understanding and harnessing spin currents through spin pumping is critical for the development of efficient spintronic devices. The use of a magnetic insulator with low damping enhances the signal-to-noise ratio in crucial experiments such as spin-torque ferromagnetic resonance (FMR) and spin pumping. A magnetic insulator coupled with a heavy metal or quantum material offers a more straightforward model system, especially when investigating spin-charge interconversion processes to greater accuracy. This simplicity arises from the absence of unwanted effects caused by conduction electrons unlike in ferromagnetic metals. Here, we investigate the spin pumping in coupled ferrimagnetic (FiM) Y3Fe5O12 (YIG)/Tm3Fe5O12 (TmIG) bilayers combined with heavy-metal (Pt) using the inverse spin Hall effect. It is observed that magnon transmission occurs at both of the FiMs FMR positions. The enhancement of spin pumping voltage (Vsp) in the FiM garnet heterostructures is observed. The plausible reason might be the interfacial exchange coupling between FiMs. The modulation of Vsp is achieved by tuning the bilayer structure. Further, the spin mixing conductance for these coupled systems is found to be ≈1018 m−2. Our findings describe a coupled FiM system for the investigation of magnon coupling providing opportunities for magnonic devices.

Direct Observation of Spin Current Oscillation in a Ferromagnet

Spin current is a crucial element in spintronics, and its diffusion in materials is typically characterized by monotonic decay. However, when the material hosting the spin current is also a magnet, the spin current is expected to exhibit spatial oscillations, the observation of which remains elusive. Here, we demonstrate the spatial oscillation of a spin current in a nickel film by measuring the thickness-dependent inverse spin Hall effect in Ni/YIG bilayers. The inverse spin Hall current in nickel is found to oscillate with its film thickness, in contrast to nonmagnetic materials, and that the oscillation period quantitatively agrees with theoretical predictions based on differences in the Fermi wave vector between majority and minority carriers. Our findings reveal a previously hidden behavior of spin-transport dynamics and identify a new degree of freedom for manipulating spin current, with potential implications for future spintronic devices. Published by the American Physical Society 2024

Spin‐Thermoelectric Generation Associated with Magnetization Dynamics in the Insulator‐Based Generators Fabricated from Liquid Phase Epitaxial Yttrium Iron Garnet, Bi‐Substituted YIG and Bi‐ and Al‐Substituted YIG Films

An insulator‐based spin‐thermoelectric (STE) generator is composed of a thin paramagnetic metal (PM: Pt) layer for generating the STE voltage VSTE via the inverse spin Hall effect and a ferrimagnetic insulator (FMI) film or slab used for producing spin‐wave spin currents due to a temperature gradient . Yttrium iron garnet (YIG) is a key material used for the FMI of STE generators. We examined in detail the ferromagnetic resonance (FMR) properties of YIG (Y3Fe5O12), Bi‐substituted YIG (Y3‐xBixFe5O12) and Bi‐ and Al‐substituted YIG (Y3‐xBixFe5‐yAlyO12) films grown by liquid phase epitaxy (LPE). Bi‐substituted YIG films exhibited the large FMR damping and high STE voltage when the films were incorporated in the STE generator. The LPE‐grown Y2.35Bi0.65Fe5O12 film exhibited the FMR linewidth ΔH of 30 mT and the VSTE of 70 μV for the ∇T of . This paper comprehensively presents the origin of the STE generation in the insulator‐based generators on the basis of the results of FMR and STE measurements. To clarify the origin of STE generation in the generators fabricated from single crystal YIG (YIG, Bi‐substituted YIG and Bi‐ and Al‐substituted YIG) films grown by LPE, three principal factors are explained: (a) thermal energy transfer from the phonon system to the spin system, which strengthens the heat excitation of spin precession, through the spin–orbit coupling enhanced by the growth‐induced magnetic anisotropy of LPE‐grown YIG films, (b) in the YIG films incorporated in the STE generators, the generation of spin‐wave spin currents owing its origin to the ferromagnetic spin exchange interaction acting between neighboring spins due to , and (c) how the spin currents pumped into the Pt layer from the YIG film at the Pt/YIG bilayer interface are affected by the magnetization processes of single crystal YIG films. It is concluded that the STE generation of insulator‐based STE generators can be explained from a viewpoint of the spin dynamics under the effect of in the Pt/YIG bilayer structure. © 2024 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.

Polarization characteristics of Ni/Pt-based spintronic terahertz emitters based on spin electron dynamics

We report on the terahertz (THz) emission polarization characteristics of spintronic nickel/platinum (Ni/Pt) bilayer films. The films were deposited on MgO substrates via electron beam deposition with varying Ni thicknesses of 5, 7, and 9 nm and a constant Pt thickness of 6 nm. Results from B-field polarity-dependent THz measurements exhibited different THz emission characteristics for the p- and s-polarized components. We attribute the strong, wide-bandwidth B-field dependent p-polarized component to the inverse spin Hall effect and the weak, low-bandwidth B-field independent s-polarized component to the ultrafast demagnetization process. The peak-to-peak THz emission amplitudes were demonstrated to be dependent on the sample rotational angle about the optical axis which suggests sample inhomogeneity from the deposited Ni/Pt spintronic films. These results are crucial for the material design and development of more intense spintronic THz sources.

Ferromagnetic resonance measurement with frequency modulation down to 2 K.

Ferromagnetic resonance (FMR) spectroscopy is a powerful technique to study the precessional dynamics of magnetization in thin film heterostructures. It provides valuable information about the mechanisms of exchange bias, spin angular momentum transfer across interfaces, and excitation of magnons. A key desirable feature of FMR spectrometers is the capability to study magnetization dynamics over a wide phase space of temperature (T), frequency (f), and magnetic field (B). The design, fabrication, and testing of such a spectrometer, which uses frequency modulation techniques for improved detection of microwave absorption, reduces heat load in the cryostat and allows simultaneous measurements of inverse spin Hall effect (ISHE) induced dc voltages, is described in this paper. The apparatus is based on a 2-port transmitted microwave signal measurement using a grounded co-planar waveguide. The input radio frequency (RF) signal, frequency modulated at a tunable f-band, excites spin precession in the sample, and the attenuated RF signal is measured phase sensitively. The sample stage, inserted in the bore of a superconducting solenoid, allows magnetic field and temperature variability of 0 to ±5T and 2-310K, respectively. We demonstrate the working of this Cryo-FMR and ISHE spectrometer on thin films of Ni80Fe20 and Fe60Co20B20 over a wide T, B, and f phase space.