The effects of various amounts of TiO2 in the composition of SnO2-based varistors made from nano-sized materials on microstructure and electrical properties have been investigated. Titanium oxide acts as both a densifier and grain growth enhancer resulting in relative densities in the range of 96–99%. The addition of TiO2 from 0 to 3mol% has changed the average grain size from 1.8 to 5μm. The introduction of TiO2 causes precipitation of Ta2O2.2 phase on the sample surfaces. The lowest breakdown field, 2kV/cm, has been observed for the sample containing 0.75mol% of TiO2, and the best surge-withstand parameters (residual voltage ratio, 2.4, withstanding surge current density, 5kA/cm2) have been observed for the sample with 0.25mol% TiO2. Larger amounts of TiO2 have had an adverse effect on the surge-withstand capability due to the loss of homogeneity in the samples caused by tantalum transpiration.
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