Intermediate Frequency Amplifier Research Articles

Methodology for assessing the effectiveness of the impact intermittent noise interference to a radar station with adaptive detection threshold formation

Problem statement. For aviation suppression equipment, it is characteristic to separate the modes of interference and reconnaissance radiation in time due to the problem of their electromagnetic compatibility. It is also possible to alternately suppress various objects with a limited bandwidth of the interference station. This leads to periodic interruptions of the noise interference and, consequently, a decrease in its spectral density. A feature of radar stations of the latest and modernized means of intercepting air defense systems aimed at hitting targets in a complex interference environment is adaptive control of parameters and modes of operation of various subsystems. In particular, modern radar stations provide for the adaptive formation of a detection threshold based on estimates of the statistical characteristics of such interference. Such estimates are formed over the interference integration interval, the size of which is generally selected from the condition of insignificant influence of signals reflected from the targets on them. Moreover, for the most correct consideration of the interference situation in the vicinity of the detected target, the strobe pulses of the false alarm probability stabilization circuit, forming the integration interval, are placed on both sides of the analyzed range resolution element. Goal. To evaluate the effect of intermittent noise interference parameters on the operation of radar stations with adaptive detection threshold foration. Assumptions. When developing the methodology, the following typical assumptions were made: in target detection mode, the radar station emits pulse signals with a low or medium pulse repetition rate; the signal reflected from the target, noise interference and internal noise are independent normal random processes; interference and internal noise have a uniform spectral density within the bandwidth of the radar receiver; the receiving path of the radar station has a traditional structure, which includes: an intermediate frequency amplifier, a linear amplitude detector, an integrator and a threshold device. Results. For the first time, the obtained technique takes into account the influence of time and energy parameters of intermittent noise interference on the probability of correct target detection by a radar station with adaptive detection threshold formation. Reducing the duration of the interference pulse in the period of intermittent noise interference leads to a nonlinear increase in the probability of correct target detection. To maximize this indicator, it is necessary to ensure a sufficiently high accuracy in estimating the statistical characteristics of the power of intermittent noise interference. The reliability of the results obtained using the developed methodology is confirmed by the fact that the effectiveness of intermittent noise interference, while excluding pauses in its radiation, is reduced to the effectiveness of continuous noise interference. Practical significance. The developed technique makes it possible to clarify the technical requirements for radar stations that implement flexible control of the target detection mode under the influence of intermittent noise interference of unknown intensity.

X-Band Single Chip Integrated Pulsed Electron Spin Resonance Microsystem.

We report on the design and characterization of a single chip integrated pulsed electron spin resonance detector operating at 9.1 GHz. The microsystem consists of an excitation microcoil, a detection microcoil, a low noise microwave preamplifier, a mixer, and an intermediate frequency (IF) amplifier. The chip area is about 0.7 mm2. To exemplify its possible applications, we report the results of single pulse, Rabi nutation, Hahn echo, two echoes, Carr-Purcell, and inversion recovery echo experiments performed on 0.02 and 0.05 nL samples of α, γ-bisdiphenylene-β-phenylallyl (BDPA) and 1% BDPA in polystyrene (BDPA:PS) at room temperature. The measured spin sensitivity is about 8 × 107 spins/Hz1/2 on a sensitive volume of about 0.1 nL. The microsystem power consumption is less than 100 mW, the radio frequency (RF) input bandwidth is 8.8 to 9.8 GHz, the IF output bandwidth is DC to 350 MHz, and the deadtime is less than 30 ns.

A 30-60 GHz Broadband Low LO-Drive Down-Conversion Mixer with Active IF Balun in 65 nm CMOS Technology.

A 30~60 GHz broadband down-conversion mixer driven by low local oscillator (LO) power is presented. The down-conversion mixer utilizes an input signal coupling technique based on the Marchand balun to achieve broadband operation and achieves low LO power drive and low DC power consumption through the use of a weak inversion bias with Gilbert switching devices. The broadband conversion of single-ended to differential signals is achieved using the Marchand balun with compensation lines, and an equivalent circuit analysis is performed. For the intermediate frequency (IF) output, a self-biased IF trans-impedance amplifier with current reusing and an active IF balun structure are used to achieve signal amplification and single-ended signal output. Test results show that the proposed mixer achieves a conversion gain of -1.2 to 6.4 dB in an IF output bandwidth of 0.1 to 5 GHz at radio frequency (RF) input frequencies of 30 to 60 GHz and LO driving power of -10 dBm. The DC power consumption of the core mixing unit of the proposed mixer is 4.8 mW, and the DC power consumption including the IF amplifier is 28.3 mW. The proposed mixer uses a 65 nm CMOS technology with a chip area of 0.26 mm2.

GaN-based W-band receiver chip development for fusion plasma diagnostics

Millimeter-wave diagnostics have proven effective on various magnetic fusion devices worldwide, yet the formidable challenges posed by the harsh environments of future burning plasma devices, characterized by extreme temperatures, pressures, and radiation levels, remain a significant hurdle. To address these challenges, the utilization of wide bandgap Gallium Nitride (GaN)-based millimeter-wave diagnostics is a most promising solution for fusion reactor safety monitoring and control. A noteworthy W-band GaN-based system-on-chip receiver has been the demonstrated by employing HRL T3 40 nm GaN technology. This receiver chip, compactly designed with dimensions of 3 × 5 mm2, incorporates essential components such as the 75–110 GHz RF Low-Noise Amplifier (LNA), mixer, Intermediate Frequency (IF) amplifier, and Local Oscillator (LO) chain. This receiver chip will be packaged as a millimeter-wave receiver module and applied on the DIII-D National Fusion Facility, for fusion plasma edge shape monitoring for operational safety and dangerous disruption prediction. The laboratory measurement results have demonstrated suitable performance. This advancement is pivotal for accurate analysis of plasma behavior in the extreme conditions of burning plasma devices, driving progress in fusion research and technology.

An 18–28 GHz dual-mode down-converter IC for 5G applications

Emerging spectrum trends require a higher integration of 5G New Radio Frequency Range 1 (FR1) and Frequency Range 2 (FR2) bands to enhance the availability of spectrum and spectrum-sharing opportunities. To enable the reception of both FR1 and FR2 bands in a seamless hardware entity, we propose combining homodyne and heterodyne architectures. This necessitates the incorporation of a down-converter module that transfers the incoming signals from FR2 bands down to FR1, ensuring compatibility with an FR1 direct-conversion receiver (DCR) for the final signal reception. The primary focus of this paper is the design and implementation of the required integrated down-converter. The module includes an integrated balun, a low-noise amplifier (LNA) with a bypass mode, a dual-mode mixer, and an intermediate frequency (IF) amplifier. The introduced bypass mode helps to further elevate the linearity performance compared to the nominal mode. The bypass mode is designed for joint communication and sensing operation to avoid the compression of the receiver. This work also incorporates a local oscillator (LO) signal distribution network with phase tuning elements using a mixed-signal approach. The circuit is implemented in a 22-nm CMOS process, and the active die area is 0.6 mm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {mm}^\ ext {2}$$\\end{document}. The measurements demonstrate that the implemented chip can efficiently perform the required frequency conversion over a wide frequency range of 18–28 GHz. Conversion gain of 4.5–7.5 dB, noise figure of 15–19.7 dB, 1 dB compression point (IP1dB) of − 16 to − 10 dBm, and input third-order intercept point (IIP3) of − 5 to 0 dBm are achieved. The measured IP1 dB and IIP3 for the bypass mode are +0.5 to +4.5 dBm and +8.5 to +10 dBm, respectively.

Temperature-Insensitive Ka-Band Transceiver With Ultralow-Noise Self-Calibrated Low Dropout Regulator in 65-nm CMOS

This article proposes a Ka-band transceiver with an integrated local oscillator (LO) generator and multiple low dropout regulators (LDOs) to eliminate the strict requirements to the external power supply network. The proposed self-calibrated LDO eliminates the use of a bandgap reference circuit and its large flicker noise contribution in traditional power regulators to achieve ultralow-noise performance. The output of the proposed LDO is self-calibrated with temperature and process variations by autoconfiguring the feedback coefficient through a digital loop to guarantee the stable performance of its loaded high-speed circuits. The stable gain and output power of the transceiver with temperature variation are achieved by on-chip multiple self-compensation schemes, which include a self-sensing LDO for the power amplifier, a constant- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$G_{\!m}$ </tex-math></inline-formula> bias circuit for the amplification stages, and the temperature-compensated intermediate-frequency amplifiers (TC IFAs) with proportional-to-absolute-temperature (PTAT) gain to further compensate for the gain deviation caused by the second-order effect and large-signal performance difference. Implemented in 65-nm CMOS technology, measurements indicate that the output noise of the proposed LDO is as low as 15 nV/sqrt (Hz) at 10-kHz offset and the integrated power network greatly reduces the noise influence on the LO signal compared with the traditional bandgap-referenced LDO. Furthermore, due to the adoption of the proposed temperature compensation scheme, the small-signal gains of the receiver and transmitter only fluctuate by 1.1 and 1.3 dB from <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$- 40\,\,^{\circ }\text{C}$ </tex-math></inline-formula> to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$85~^{\circ }\text{C}$ </tex-math></inline-formula> , respectively, and the output saturated power of the transmitter varies by 0.7 dBm over the entire temperature range.

A Cryo-CMOS Wideband Quadrature Receiver With Frequency Synthesizer for Scalable Multiplexed Readout of Silicon Spin Qubits

In this article, a cryo-CMOS receiver integrated with a frequency synthesizer for scalable multiplexed readout of qubits is presented, focusing on radio frequency (RF) reflectometry readout of silicon-based semiconductor spin qubits/quantum dots. The proposed spin qubit readout chip consists of a wideband low noise amplifier (LNA), a quadrature mixer, a complex filter, a pair of in-phase/quadrature (I/Q) intermediate frequency (IF) amplifier chains, and a type-II charge-pump phase-locked loop (PLL) with a programmable frequency divider providing local oscillator (LO) signals. Noise optimizations are applied to the LNA design and the quadrature active mixer design to obtain the required performance. A mode-switching complementary voltage-controlled oscillator (VCO) is proposed to achieve low-power and low-phase noise in a wide-frequency tuning range (46.5%). Circuit modifications and design considerations for robust cryogenic temperature operation are presented and discussed. Measurements show that the receiver provides an average gain of 65 dB, a minimum noise figure of 0.5 dB, an IF bandwidth of 0.1–1.5 GHz, and an image rejection ratio of 23 dB at 3.5 K with a power consumption of 108 mW. This cryo-CMOS receiver with frequency synthesizer for spin qubit readout is a first step toward fully-integrated qubit readout and control.

A 220‐GHz CMOS passive subharmonic downconverter for low‐IF applications

This paper presents a 220-GHz subharmonic downconverter with high conversion gain (CG) and low noise figure (NF) implemented in 28 nm bulk CMOS, including a core mixer and an intermediate frequency (IF) amplifier. Based on the traditional quasi-subharmonic mixer, new gate-shorted technology is presented to improve NF and CG by adding a source inductor to reduce the loss of radiofrequency signals. In addition, the impedance transformation network provides passive voltage gain to suppress the noise of the IF amplifier. The downconverter achieves a minimum single-sidebandNF of 15.5 dB and a maximum CG of 21.3 dB when the IF frequency is 10 MHz. The 1 dB compression point of the downconverter is −30 dBm and consumes 8 mA current with an operating voltage of 0.9 V. The core area of the chip is 200 × 160 µm2

Analysis of possibility to improve the civil marine radar efficiency during navigation in the Arctic waters

The paper presents the civil marine radar (CMR) efficiency in the polar waters in the case of advanced signal processing based on the optimal filtering of the voltage coming to the intermediate frequency amplifier. The structure of the radar subsystem was modified by adding two complementary filter units that allow to transform the filter frequency response into the almost sinc-function curve providing much better detection of weak radar echoes. The studies have shown that the updated radar matched filter makes it possible for CMR to observe objects with relatively small scattering cross section at the considerably longer distances than up-to-date CMR. Also it is explained that this radar signal processing doesn’t require the increasing of CMR cost which can also be considered as advantage of the method.

28-GHz CMOS Up-Conversion Mixer With Improved LO Second-Harmonic Leakage Signal Suppression for 5G Applications

A CMOS up-conversion mixer with an intermediate frequency (IF) amplifier and local oscillator (LO) buffer is presented for mobile 28-GHz-band 5G dual-conversion transceivers. A balun transformer with improved common-mode rejection ratio characteristics is proposed to improve the LO second-harmonic signal suppression, which is a problem in the up-conversion mixer of the 5G dual-conversion architecture. By applying the proposed balun transformer instead of the conventional one, a common-mode rejection ratio greater than 10 dB can be achieved at the frequencies of the LO second-harmonic leakage signal. An up-conversion mixer with an IF amplifier and LO buffer incorporating the proposed balun transformer was implemented in a 65-nm CMOS process, and it draws a current of 31.4 mA from a 1-V supply voltage. It provides a gain larger than 22.2 dB, a noise figure less than 4.1 dB, a thirdorder output intercept point higher than 4.6 dBm, and an LO second-harmonic leakage signal lower than -55.5 dBm in frequencies ranging from 26.5 GHz to 29.5 GHz. It also exhibits a suppression improvement of the LO second-harmonic leakage signal of approximately 14 dB with respect to an up-conversion mixer with IF amplifier and LO buffer using the conventional balun transformer. The proposed up-mixer with IF amplifier and LO buffer is the first one reported that addresses the 2LO leakage issue and the first demonstration of 2LO leakage signal suppression improvement for a 5G mmWave dual-conversion single-quadrature transmitter.

Application of autodynes in advanced systems of atmosphere radar sensing

The results of studies of an autodyne transceiver (AT) for advanced radar sensing systems of the atmosphere are presented. A mathematical model of the APP has been developed, presented in the form of an oscillator with a single-circuit oscillatory system under the influence of a request signal from the radar. The analysis of the dynamics of signal reception in the beat mode, when the frequency of the received signal is outside the synchronization band, as well as in the capture mode, when the frequency of the request signal falls into the synchronization band of the AT. The noise and energy parameters and characteristics of the microwave generators used as an AT are investigated. Calculations of dynamic, noise and energy parameters and characteristics of the AT are performed depending on the choice of the type of conductivity characteristic of the active element and the position of the working point on it, as well as on the conditions of connection of the AT with the load. The experimental studies of the AT were carried out on the example of a serial transistor microwave module of the MRS-3MK radiosonde at a frequency of 1680 MHz. The description of the structural scheme of the AT for an aerological radiosonde operating in the beating mode is given. It is shown that the sensitivity of the AT to the request signal is determined by fluctuations in the amplitude of the microwave module and the bandwidth of the intermediate frequency amplifier. It is established that the sensitivity of the AT is minus 110...120 dB/W, for measuring the inclined range of 250...300 km is enough to have a radar transmitter with a pulse power of 50...100 W, while its average power corresponds to 0.05...0.1 W.

Analysis of the Transformation of Random Signals and Noise Using Poly-Gaussian Models

Analysis performed transformation of random signals and noise in linear and nonlinear systems based on the use of poly-Gaussian models and multidimensional PDF of the output paths of information-measuring and radio systems. The classification of elements of these systems, as well as expressions describing the input action and output response of the system are given. It is shown that the analysis of information-measuring and systems can be carried out using poly-Gaussian models. The analysis is carried out with a series connection of a linear system and a nonlinear element, a series connection of a nonlinear element and a linear system, as well as with a parallel connection of the named links. The output response in all cases will be a mixture of a poly-Gaussian distribution with a number of components. An example of the analysis of signal transmission through an intermediate frequency amplifier and a linear detector against a background of non-Gaussian noise is given. The resulting probability density distribution of the sum of the signal and non-Gaussian noise at the output of the detector will be poly-Rice. The multidimensional probability distribution density of the output processes of the nonlinear signal envelope detector is also obtained. The results of modeling the found distribution densities are presented. It is shown that the use of the poly-Gaussian representation of signals and noise, as well as the impulse response of the system, makes it possible to effectively analyze inertial systems in the time domain.

A 20–42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7–4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

This article presents a 20–42-GHz in-phase and quadrature (IQ) receiver in 22-nm CMOS fully depleted silicon on insulator (FD-SOI). The receiver includes a wideband low noise variable-gain amplifier (LN-VGA), double-balanced IQ mixers, wideband I/Q generation network and wideband local oscillator (LO) driver, low-pass filters, and wideband intermediate frequency (IF) amplifiers. The measured receiver has a peak conversion gain of 25.3 dB with a 3-dB bandwidth of 19.8–42 GHz and an I and Q bandwidth of 5.7 GHz and covers the 5G millimeter-wave (mm-wave) band. The measured single-sideband noise figure (NF) is 2.7–4.2 dB at 24–42 GHz with an IP1dB of −26 to −23 dBm. The I/Q downconverter consumes a total of 102 mW from 0.8- and 1.6-V supplies. The IP1dB can be improved by 5 dB with an NF degradation by only 1.2 dB using RF VGA gain control. At peak gain and −8-dB VGA setting, the receiver dynamic range is 64–68 dB for a 100-MHz bandwidth, which is very high for low power consumption. The gain and phase mismatch between the I and Q channels is < 0.6 dB and <6°, respectively. To the best of the authors’ knowledge, this is the first wideband I/Q receiver that covers the entire mm-wave 5G band based on GF 22-nm CMOS FD-SOI. The application area is multistandard multigigabit per second communication systems.

A 90 nm-CMOS broadband receiver with 10 dB conversion gain and 15 dB noise figure in 80–110 GHz suitable for multi-pixel imaging arrays

This paper describes the latest development of a W-band 90 nm-CMOS receiver chip that is suitable for use in radio-astronomical multi-pixel imaging arrays and other broadband scientific instruments. This circuit includes an RF-low-noise amplifier (LNA), mixer, intermediate-frequency amplifier (IF-Amp), local-oscillator (LO) tripler, and driving amplifier. With a tripler integrated into the circuit, the incoming 80–110 GHz spectrum can be directly down-converted to 2–32 GHz by the applied 26 GHz LO signal. The system architecture will be presented, with the corresponding sub-circuits discussed in detail. In the on-wafer measurement at room temperature, this receiver has around 10 dB gain and 15 dB noise figure across the whole frequency range, with 400 mW power dissipation under 1.8 V DC bias. By adding a compound-semiconductor LNA in front of this CMOS receiver chip, compact low-noise receiver modules can be easily constructed and deployed.

A remote gain controlled and polarization angle tunable Doppler backward scattering reflectometer.

Remote control of the diagnostic systems is the basic requirement for the high performance plasma operation in a fusion device. This work presents the development of the remote control system for the multichannel Doppler backward scattering (DBS) reflectometers. It includes a remote controlled quasi-optical system and a remote intermediate frequency (IF) amplifier gain control system. The quasi-optical system contains a rotational polarizer, its polarization angle is tunable through a remote controlled motor, and it could combine the microwave beams with a wide frequency range into one focused beam. The remote IF gain control system utilizes the digital microcontroller (MCU) technique to regulate the signal amplitude for each signal channel. The gain parameters of amplifiers are adjustable, and the feedback of working status in the IF system will be sent to MCU in real time for safe operation. The gain parameters could be controlled either by the Ethernet remote way or directly through the local control interface on the system. Preliminary experimental results show the effectiveness of the remote controlled multichannel DBS system.

System-on-chip upgrade of millimeter-wave imaging diagnostics for fusion plasma.

Monolithic, millimeter wave "system-on-chip" technology has been employed in chip heterodyne radiometers in a newly developed Electron Cyclotron Emission Imaging (ECEI) system on the DIII-D tokamak for 2D electron temperature and fluctuation diagnostics. The system employs 20 horn-waveguide receiver modules each with customized W-band (75-110GHz) monolithic microwave integrated circuit chips comprising a W-band low noise amplifier, a balanced mixer, a ×2 local oscillator (LO) frequency doubler, and two intermediate frequency amplifier stages in each module. Compared to previous quasi-optical ECEI arrays with Schottky mixer diodes mounted on planar antennas, the upgraded W-band array exhibits >30 dB additional gain and 20× improvement in noise temperature; an internal eight times multiplier chain is used to provide LO coupling, thereby eliminating the need for quasi-optical coupling. The horn-waveguide shielding housing avoids out-of-band noise interference on each module. The upgraded ECEI system plays an important role for absolute electron temperature and fluctuation measurements for edge and core region transport physics studies. An F-band receiver chip (up to 140GHz) is under development for additional fusion facilities with a higher toroidal magnetic field. Visualization diagnostics provide multi-scale and multi-dimensional data in plasma profile evolution. A significant aspect of imaging measurement is focusing on artificial intelligence for science applications.

Design of microwave broadband CMOS transmitter and receiver circuits for MIR and ECEI plasma diagnostics.

To efficiently determine the plasma electron density fluctuations using the MIR diagnostic technique, a 55-75GHz 65 nm-CMOS transmitter has been developed where four separate intermediate frequency (IF) signals are up-converted, amplified, and then combined to generate an 8-tone RF output; a broadband 90 nm-CMOS receiver has also been constructed, which consists of an RF-low noise amplifier (LNA), mixer, and IF amplifier. The circuits and their corresponding modules will soon be deployed on the DIII-D and NSTX-U fusion devices. A 110-140GHz 65 nm-CMOS receiver has also been designed, which is suitable for measuring the deep-core temperature fluctuations in the DIII-D tokamak using the electron cyclotron emission imaging diagnostic system. In addition to the RF-LNA/balun, mixer, and IF amplifier, an LO balun/tripler and driving amplifier are now included in this highly integrated circuit chip. By adopting the microwave and millimeter-wave system-on-chip concept in the front-end system design, this paper demonstrates that compact transmitter and receiver modules can be easily built, which, in turn, facilitates array implementation and maintenance.

425-to-25-GHz CMOS-Integrated Downconverter

An integrated 425-GHz radio frequency (RF) to 25-GHz intermediate frequency (IF) second-order subharmonic downconverter, including an on-chip 8X local oscillator (LO) signal multiplier circuit that provides ~1 dBm at 200 GHz from an externally applied 25-GHz signal, and a 25-GHz IF amplifier, achieves a conversion gain of 6.7 dB and a noise figure of ~17 dB. The downconverter consumes 190 mW of dc power. Compared to the previously reported CMOS and SiGe HBT receivers/downconverters operating around 400 GHz and above, the downconverter achieves ~18-dB lower single side band noise figure. Finally, a passive switching mixer can have an available output noise spectral density less than kT, which can make its NF less than its conversion loss.

Design of radio frequency integrated circuit for RF to DC power converter for bio-medical application

In modern biomedical communication systems, high level integration using CMOS technologies plays an important role for low cost performance. For mobile biomedical communication systems, the low voltage and low power design issues are crucial due to the limitation of battery capacity. Therefore, the volume and weight of the transceivers can be further reduced using the low voltage and low power technique. As such, all the designs proposed here are realized with standard CMOS technology and they are suitable to be a building block in low voltage, low cost, compact size, high gain and low power receiver front end design owing to the superior performance. The most significant building blocks in the receiver front end are low noise amplifier (LNA),RF to DC rectifier(RFDC) , local oscillator (LO) and intermediate frequency (IF) amplifier. Here, the main emphasis is given on design of the RFDC rectifier, which is regarded as the main part of the receiver front end, as the total linearity of a system dependents on the linearity of the RFDC rectifier. In CMOS transceivers, the Gilbert cell RFDC rectifier is widely used as the down converter since they are broadband with good isolation, good conversion gain and high linearity, nevertheless with some drawbacks of high supply voltage and high power consumption. In this work, different integrated topologies are implemented to dissolve the trade-off problems in the RFDC rectifier design. The simulated results show significant improvements in the aforementioned parameters in comparison to recent approaches.

Features of application of the sampling theorem when processing narrow-band radio signals with known center frequency of the spectrum

An option is presented for sampling narrow-band radio signals with a known center frequency of the spectrum, which can significantly reduce the amount of computational operations when processing such signals without significant loss of information about their parameters. In this case, narrowband is determined by the ratio of the spectrum width of the received radar signal and the operating frequency of the intermediate frequency amplifier, from the output of which the signal is fed to an analog-to-digital converter (ADC). A study of the proposed method of discretization is carried out, in which the repetition rate of the ADC interrogation pulses is determined by the frequency of the reference signal of the master system of a coherent radar and is selected multiple times lower than the operating frequency of the intermediate frequency amplifier. The synchronization of the ADC interrogation pulses is organized in such a way that any two adjacent samples are quadrature connected. This procedure allows you to determine the amplitude and phase of the received signal corresponding to each sample. This creates the conditions for determining the Doppler shift and envelope parameters of the signal. The results of calculating the relative error in determining the amplitude of the signal, which appears as a result of a mismatch in the frequency of the received signal with the frequency of the reference signal, are presented. For real cases, it does not exceed 1% and depends on the radar characteristics (sounding wavelength, multiplicity between the value of the intermediate frequency at which the processing is carried out, and the value of the sampling frequency), as well as on the magnitude of the object radial velocity and the initial phase difference between the output signal of the intermediate frequency amplifier and the reference signal. It is shown that this approach to converting the signal into a digital format is also applicable to signals with phase (0, π) manipulation if the duration of the code elements is significantly longer than the period of the reference signal.