Interlayer Exchange Coupling Research Articles

Temperature stability of Co/Pt and Co/Pd synthetic antiferromagnets using an Ir spacer

The magnetic properties of Co/Pt and Co/Pd multilayers of perpendicular synthetic antiferromagnets with an Ir spacer were investigated. A strong interlayer exchange coupling of J_{mathrm{{ex}}}=2.01mathrm{{erg/cm}}^2 was observed in the Co/Pt-based structures and a lower value of J_{mathrm{{ex}}}=1.04mathrm{{erg/cm}}^2 was found in the Co/Pd multilayers. Only the former revealed a high post-annealing stability at T_a=330,^{circ }C, as the latter exhibited a ferromagnetic coupling most likely due to the deterioration of the spacer by pinhole coupling. This assumption was confirmed by theoretical calculations of the total energy functional. Moreover, the high temperature stability of Ir-based Co/Pt p-SAF structures was verified by calculating the exchange field H_{mathrm{{ex}}} from magnetization M(H) loops as a function of temperature, where it reached a temperature of T_b=370,^{circ }C before losing all interlayer exchange coupling.

Compensation temperatures and hysteresis loops of the ferrimagnetic bilayer kagome lattice with RKKY interaction

In this study, a bilayer Kagome lattice with RKKY interaction is described using a ferrimagnetic mixed spin-3/2 and spin-2 Ising model. Interesting compensation temperature and hysteresis loops of the system generated by various physical parameters, such as the crystal fields of sublattices (Da, Db), the interlayer exchange coupling (JR) and the intralayer exchange coupling (Jb) are explored using Monte Carlo simulation. The results demonstrate that the compensation temperature (Tcomp), weaker Da and Jb, and stronger Db, are favourable for the emergence of the compensation temperatures. Besides, under certain physical parameters, the system may exhibit triple-loop hysteresis behavior and multiple magnetization plateaus.

Field-free spin-orbit torque switching in interlayer exchange coupled Co/Ta/CoTb

This study investigates a T-type field-free spin-orbit torque device with an in-plane magnetic layer coupled to a perpendicular magnetic layer via a non-magnetic spacer. The device utilizes a Co/Ta/CoTb structure, in which the in-plane Co layer and the perpendicular CoTb layer are ferromagnetically (FM) coupled through the Ta spacer. ‘T-type’ refers to the magnetization arrangement in the FM/spacer/FIM structure, where the magnetization in FM is in-plane, while in FIM, it is out-of-plane. This configuration forms a T-shaped arrangement for the magnetization of the two magnetic layers. Additionally, ‘interlayer exchange coupling (IEC)’ denotes the interaction between the two magnetic layers, which is achieved by adjusting the material and thickness of the spacer. Our results show that an in-plane effective field from the IEC enables deterministic current-induced magnetization switching of the CoTb layer. The field-driven and the current-driven asymmetric domain wall motion are observed and characterized by magneto-optic Kerr effect measurements. The functionality of multistate synaptic plasticity is demonstrated by understanding the relationship between the anomalous Hall resistance and the applied current pulses, indicating the potential for the device in spintronic memory and neuromorphic computing.

Atypical magnetism in Pt/MgO/FeCoB/Pt waveguide structure by exchanging the order of MgO and FeCoB layers

Interfaces in FeCoB/MgO/FeCoB magnetic tunnel junction play a vital role in controlling their magnetic and transport properties for various applications in spintronics and magnetic recording media. In this work, interface structures of a few nm thick FeCoB layers in FeCoB/MgO and MgO/FeCoB bilayers are comprehensively studied using x-ray standing waves (XSW) generated by depositing bilayers between Pt waveguide structures. High interface selectivity of nuclear resonance scattering (NRS) under the XSW technique allowed to measure structure and magnetism at the two interfaces, namely FeCoB-on-MgO and MgO-on-FeCoB, yielding an interesting result that electron density and hyperfine fields are not symmetric at both interfaces. The formation of a high-density FeCoB layer at the MgO/FeCoB (FeCoB-on-MgO) interface with an increased hyperfine field (∼34.65 T) is attributed to the increasing volume of FeCo at the interface due to boron diffusion from 57FeCoB to the MgO layer. Furthermore, it caused unusual angular-dependent magnetic properties in MgO/FeCoB bilayer, whereas FeCoB/MgO is magnetically isotropic. In contrast to the literature, where the unusual angular dependent in FeCoB based system is explained in terms of in-plane magnetic anisotropy, present findings attributed the same to the interlayer exchange coupling between bulk and interface layer within the FeCoB layer.

Measurement Geometry and Hydrostatic Pressure‐Dependent Magnetoresistance in All‐Oxide‐Based Synthetic Antiferromagnets

AbstractThe electronic structure of constituent layers and the spin channel of propagating electrons are critical factors that affect the magnitude and sign of magnetoresistance (MR) in synthetic antiferromagnets (SAFMs), which are important for spintronic applications. However, for all‐oxide‐based SAFMs, where there is strong coupling between multiple degrees of freedom, spin transport becomes more complex and remains elusive. Here, using ultrathin half‐metallic manganite/doped ruthenate SAFMs as a model system, three sign reversals of MR are demonstrated accompanied by the crossover between underlying spin‐dependent transport mechanisms. Electron tunneling produces normal MR in the current‐perpendicular‐to‐plane (CPP) geometry at low temperatures, whereas carrier confinement causes inverse MR in the current‐in‐plane (CIP) geometry. Strikingly, CPP MR can undergo a temperature‐driven sign reversal due to resonant tunneling via localized states in the spacer. Moreover, hydrostatic pressure can modulate the interlayer exchange coupling and induce an asymmetric interfacial response to dramatically facilitate electron tunneling, driving a controllable sign reversal of CIP MR. These results provide new insights into understanding and optimization of MR in all‐oxide‐based SAFMs.

Spacer Thickness and Temperature Dependences of the Interlayer Exchange Coupling in a Co/Pt/Co Three-Layer Structure

Domain wall mobility as a function of nonmagnetic interlayer thickness and temperature was studied in ultrathin exchange-coupled ferromagnetic layers using magneto-optic Kerr microscopy. The system under study is a Pt/Co/Pt/Co/Pt heterostructure having perpendicular magnetic anisotropy and a middle Pt layer with spatially variable thickness. The ferromagnetic interaction between the Co layers is observed when the Pt interlayer thickness varies from 5 to 6 nm in a temperature range of 200–300 K. There is a certain interval of Pt layer thickness where domain walls in both ferromagnetic layers move independently. Nonlinear dependence of the domain wall displacement on the applied field was measured. It is shown that an equilibrium position of the relaxed domain wall depends on field, temperature, and the nonmagnetic interlayer thickness. This position is determined by the energy balance: (i) domain wall displacement provided by the applied field, (ii) interlayer exchange interaction in the area swept by the domain wall, and (iii) domain wall coercivity. The mechanism of domain wall stabilization in terms of independent wall motion near critical thickness was considered. It is found that both the coercivity of the Co layer and the critical thickness decrease at higher temperature, while the interlayer exchange constant J is changed weakly.

Field-free switching and high spin–orbit torque efficiency in Co/Ir/CoFeB synthetic antiferromagnets deposited on miscut Al2O3 substrates

Ir-CoFeB-based synthetic antiferromagnets (SAFs) are potential candidates as the free layer of the next-generation magnetic tunnel junctions (MTJs) for high speed and density memories due to their perpendicular magnetic anisotropy and strong interlayer exchange coupling. However, the field-free spin–orbit torque (SOT) switching of Ir-CoFeB-based SAFs has rarely been reported, especially in the Co/Ir/CoFeB system with high anti-interference capability and being readily integrated with MTJs. In this paper, SOT-induced magnetization switching and SOT efficiency in Co/Ir/CoFeB SAFs with perpendicular anisotropy and tunable exchange coupling are systemically investigated. A full field-free switching of perpendicular Co/Ir/CoFeB SAFs is realized by depositing them onto crystal miscut Al2O3 substrates, which induce a tilted magnetic anisotropy. Furthermore, by introducing crystalline MgO or amorphous HfO2/SiO2 as the seed layers, the source of the tilted magnetic anisotropy was proved to be from the transverse asymmetry caused by the crystal miscut. Moreover, the crystal miscut enhances the SOT efficiency. The findings provide an approach to reliable field-free switching and high SOT efficiency of Ir-CoFeB-based SAFs for memories as well as logics with low power, fast speed, and high density.

Magnetic bubbles with alternating chirality in domain walls

In magnetic multilayers with perpendicular anisotropy, the competition of short-range and long-range interactions gives rise to the stability of cylindrical magnetic domains, also known as magnetic bubbles. The presence of Dzyaloshinsky-Moriya interaction induced by asymmetric interfaces between magnetic and nonmagnetic layers may lead to the formation of cylindrical bubble domains with Neel-type domain walls across the whole thickness of the multilayer. Such domain walls produce no contrast in Lorentz TEM under the normal incidence of the electron beam to the film. The latter is often used as an argument for the presence of Dzyaloshinskii-Moriya interaction in the system. Here we show that in magnetic multilayers, the absence of the Lorentz TEM contrast might also have another origin. In particular, in the absence of interfacial Dzyaloshinskii-Moriya interaction and weak interlayer exchange coupling, the magnetic bubbles might have Bloch-type domain walls of alternate chirality in adjacent layers. Such domain walls also do not produce magnetic contrast in Lorentz TEM at normal incidence of the electron beam. We show that, in the absence of interlayer exchange coupling, the magnetic bubble domains with the domain walls of fixed and alternate chirality have nearly identical energies and can coexist in the same range of magnetic fields. Using the geodesic nudged elastic band method, we prove that these states are separated by finite energy barriers. Furthermore, we demonstrate that magnetic multilayers with only dipolar coupling, besides the magnetic bubbles with nontrivial topology in all layers, can accommodate solutions with trivial topology within the internal layers.

Reversible conversion between skyrmions and skyrmioniums

Skyrmions and skyrmioniums are topologically non-trivial spin textures found in chiral magnetic systems. Understanding the dynamics of these particle-like excitations is crucial for leveraging their diverse functionalities in spintronic devices. This study investigates the dynamics and evolution of chiral spin textures in [Pt/Co]3/Ru/[Co/Pt]3 multilayers with ferromagnetic interlayer exchange coupling. By precisely controlling the excitation and relaxation processes through combined magnetic field and electric current manipulation, reversible conversion between skyrmions and skyrmioniums is achieved. Additionally, we observe the topological conversion from a skyrmionium to a skyrmion, characterized by the sudden emergence of the skyrmion Hall effect. The experimental realization of reversible conversion between distinct magnetic topological spin textures represents a significant development that promises to expedite the advancement of the next generation of spintronic devices.

Layer-dependent Dzyaloshinskii–Moriya interaction and field-free topological magnetism in two-dimensional Janus MnSTe

Magnetic skyrmions, as topologically protected whirl-like solitons, have been the subject of growing interest in non-volatile spintronic memories and logic devices. Recently, much effort has been devoted to searching for skyrmion host materials in two-dimensional (2D) systems, where intrinsic inversion symmetry breaking and a large Dzyaloshinskii–Moriya interaction (DMI) are desirable to realize a field-free skyrmion state. Among these systems, 2D magnetic Janus materials have become important candidates for inducing a sizable DMI and chiral spin textures. Herein, we demonstrate that layer-dependent DMI and field-free magnetic skyrmions can exist in multilayer MnSTe. Moreover, strong interlayer exchange coupling and Bethe–Slater curve-like behaviors arising from the Mn–Mn double exchange mechanism are found in bilayer MnSTe. We also uncover that the distribution of DMIs in multilayer MnSTe can be understood as making a significant contribution to the intermediate DMI using the three-site Fert–Lévy model. Our results unveil great potential for designing skyrmion-based spintronic devices in multilayer 2D materials.

Inducing or suppressing the anisotropy in multilayers based on CoFeB

Controlling the uniaxial magnetic anisotropy is of practical interest for a wide variety of applications. We study ${\mathrm{Co}}_{40}{\mathrm{Fe}}_{40}{\mathrm{B}}_{20}$ single films grown on various crystalline orientations of ${\mathrm{LiNbO}}_{3}$ substrates and on oxidized silicon. We identify the annealing conditions that are appropriate to induce or suppress in-plane uniaxial anisotropy. Anisotropy fields can be increased by annealing up to 11 mT when using substrates with anisotropic surfaces. They can be decreased to below 1 mT when using isotropic surfaces. In the first case, the observed increase of the anisotropy originates from the biaxial strain in the film caused by the anisotropic thermal contraction of the substrate when back at room temperature after strain relaxation during annealing. In the second case, anisotropy is progressively removed by applying successive orthogonal fields that are assumed to progressively suppress any chemical ordering within the magnetic film. The method can be applied to CoFeB/Ru/CoFeB synthetic antiferromagnets, but the tuning of the anisotropy comes with a decrease of the interlayer exchange coupling and a drastic change in the exchange stiffness.

Interlayer coupling-dependent magnetoelastic response in synthetic antiferromagnets

In recent years, antiferromagnetic materials have been attracting increasing interest for their stability in high magnetic fields and ultrafast magnetization dynamics. Since the energy scale of an interlayer exchange coupling (IEC) in a synthetic antiferromagnet (SAF) consisting of ferromagnetic/nonmagnetic/ferromagnetic multilayers is relatively smaller than that of an exchange coupling in antiferromagnetic materials, magnetic ordering of a SAF can be potentially controlled by an electric field, which is promising for energy-saving spintronic memory devices. However, an electric field-induced magnetoelastic response of SAFs on ferroelectric materials has not been sufficiently understood due to the presence of IEC that complicates magnetization dynamics. In this study, we prepare Co/Ru/Co SAFs with various amplitude of IEC on ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 substrates and systematically investigate their electric field-induced magnetoelastic response. We demonstrate that the magnetoelastic response disappears at the boundary where a switching between the antiferromagnetic and ferromagnetic IEC coupling occurs. The result provides insight into the coupling of the magnetoelastic effect and IEC and is useful in designing spintronic memory devices based on SAFs.

Chiral Interlayer Exchange Coupling for Asymmetric Domain Wall Propagation in Field-Free Magnetization Switching

The discovery of chiral spin texture has unveiled many unusual yet extraordinary physical phenomena, such as the Néel type domain walls and magnetic skyrmions. A recent theoretical study suggests that a chiral exchange interaction is not limited to a single ferromagnetic layer; instead, three-dimensional spin textures can arise from an interlayer Dzyaloshinskii-Moriya interaction. However, the influence of chiral interlayer exchange coupling on the electrical manipulation of magnetization has rarely been addressed. Here, the coexistence of both symmetric and chiral interlayer exchange coupling between two orthogonally magnetized CoFeB layers in PtMn/CoFeB/W/CoFeB/MgO is demonstrated. Images from polar magneto-optical Kerr effect microscopy indicate that the two types of coupling act concurrently to induce asymmetric domain wall propagation, where the velocities of domain walls with opposite chiralities are substantially different. Based on this microscopic mechanism, field-free switching of the perpendicularly magnetized CoFeB is achieved with a wide range of W thicknesses of 0.6-4.5 nm. This work enriches the understanding of interlayer exchange coupling for spintronic applications.

Concomitant modulation of interlayer exchange coupling and Gilbert damping in Fe/CoO with spin conductor Ag layer at interface

We report on the modulation of interlayer exchange coupling (IEC) between the ferromagnet (FM) Fe and insulating antiferromagnet (AFM) CoO and its impact on the Gilbert damping by a time-resolved magneto-optical Kerr effect technique. By inserting a wedge spin conductor Ag layer at the interface of Fe/CoO, it is revealed that both uniform spin precession frequency and Gilbert damping constant of Fe film decrease with increasing Ag thickness up to ∼2 nm, and above that with eliminated IEC, these two parameters reach the intrinsic values of the Fe film. The precession frequency and damping also show similar variation tendency with temperature for attenuated IEC. These results prove that the exchange coupling at the FM–AFM interface plays an essential role for the spin angular momentum transfer to the insulating AFM layer, and the spin pumping is insignificant even for the very thin spin conductor layer. Our findings may have general insights into the role of the FM/AFM interface in the magnetization dynamics and spin angular momentum transfer for future spintronic applications.

Magnetization switching process by dual spin–orbit torque in interlayer exchange-coupled systems

We report current-induced magnetization switching in Pt/Co/Ir/Co/Pt multilayers with different Ir layer thicknesses (tIr), where the perpendicularly magnetized Co layers are coupled ferromagnetically or antiferromagnetically through an interlayer exchange coupling and are sandwiched by the Pt spin Hall layers. The domain structures formed during switching vary depending on the magnetization alignment, i.e., a ferromagnetically coupled or antiferromagnetically coupled configuration. These results clarify the macroscopic picture of switching process for interlayer exchange-coupled systems. The local picture of the switching process is also examined by a numerical calculation based on a macrospin model, which reveals the switching dynamics triggered by dual spin–orbit torques for both antiferromagnetically and ferromagnetically coupled cases. The numerical calculation shows that the dual spin–orbit torques from the two Pt layers effectively act on the two Co layers not only for the antiferromagnetically coupled case but also for the ferromagnetically coupled one. Our findings deepen the understanding of the switching mechanism in a magnetic multilayer and provide an avenue to design spintronic devices with more efficient spin–orbit torque switching.

Unusual spin–orbit torque switching in perpendicular synthetic antiferromagnets with strong interlayer exchange coupling

Synthetic antiferromagnet (SAF) is an outstanding system for controlling magnetic coupling via tuning the layer thickness and material composition. Here, we control the interlayer exchange coupling (IEC) in a perpendicularly magnetized SAF Pt/Co/Ir/CoFeB/MgO multilayer, which is tuned by varying the nonmagnetic layer Ir thickness and the magnetic layer Co thickness. And we study the spin–orbit torque (SOT) driven magnetization switching of the SAF. In the SAF with a weak IEC, the SOT-driven switching behavior is similar to that of a single ferromagnet system, which is dominated by the external magnetic field. In contrast, in the SAF with an ultra-strong IEC, the saturation magnetic field is large than 50 kOe, and the SOT-driven switching behavior is decided by the effective magnetic field. The effective field is correlated to the external magnetic field, the IEC field, magnetic moments of CoFeB and Co, and magnetic anisotropy. These results may advance the understanding of SOT switching of perpendicular SAFs and promote the applications of SAFs with low stray fields and lower power in spintronic devices.

Exchange energies in CoFeB/Ru/CoFeB synthetic antiferromagnets

The interlayer exchange coupling confers specific properties to synthetic antiferromagnets that make them suitable for several applications of spintronics. The efficient use of this magnetic configuration requires an in-depth understanding of the magnetic properties and their correlation with the material structure. Here we establish a reliable procedure to quantify the interlayer exchange coupling and the intralayer exchange stiffness in synthetic antiferromagnets; we apply it to the ultrasmooth and amorphous ${\mathrm{Co}}_{40}{\mathrm{Fe}}_{40}{\mathrm{B}}_{20}$ (5--40 nm)/Ru/ ${\mathrm{Co}}_{40}{\mathrm{Fe}}_{40}{\mathrm{B}}_{20}$ material platform. The complex interplay between the two exchange interactions results in a gradient of the magnetization orientation across the thickness of the stack which alters the hysteresis and the spin wave eigenmodes of the stack in a nontrivial way. We measured the field dependence of the frequencies of the first four spin waves confined within the thickness of the stack. We modeled these frequencies and the corresponding thickness profiles of these spin waves using micromagnetic simulations. The comparison with the experimental results allows us to deduce the magnetic parameters that best account for the sample behavior. The exchange stiffness is established to be $16\ifmmode\pm\else\textpm\fi{}2$ pJ/m, independent of the ${\mathrm{Co}}_{40}{\mathrm{Fe}}_{40}{\mathrm{B}}_{20}$ thickness. The interlayer exchange coupling starts from $\ensuremath{-}1.7$ $\mathrm{mJ/}{\mathrm{m}}^{2}$ for the thinnest layers, and it can be maintained above $\ensuremath{-}1.3$ $\mathrm{mJ/}{\mathrm{m}}^{2}$ for CoFeB layers as thick as 40 nm. The comparison of our method with earlier characterizations using the sole saturation fields argues for a need to revisit the tabulated values of interlayer exchange coupling in thick synthetic antiferromagnets.

Magnetization dynamics in layered systems with coexisting bilinear and biquadratic interlayer exchange coupling

Important aspects of exchange-coupled magnetic layered structures are related to the noncollinear arrangement of sublayer magnetizations which can arise from competition between bilinear (BL) and biquadratic (BQ) interlayer exchange coupling (IEC). In this work, the influence of coexisting BL and BQ IEC of different strengths on magnetization precession in layered systems is investigated both experimentally and theoretically. Laser-induced magnetization precession has been studied in the $\text{Fe/Si}({d}_{\text{Si}}$) multilayers (MLS) as a function of the amplitude ($H$) and orientation angle (${\ensuremath{\theta}}_{H}$) of external magnetic field using time-resolved magneto-optical Kerr (TRMOKE) effect. Strongly changing characters of precession frequency dependencies $\ensuremath{\omega}(H,{\ensuremath{\theta}}_{H})$ for Fe sublayer thickness ${d}_{\text{Fe}}=3$ nm and Si spacer-layer thicknesses (${d}_{\text{Si}}$) varying in the range of 0.9--2.4 nm have been observed. Analytical formulas for acoustic and optic mode dispersion relations with coexisting BL and BQ IEC, scaled by ${J}_{1}$ and ${J}_{2}$ parameters, respectively, for the in-plane effective magnetic anisotropy and arbitrary magnetic field direction were derived, and very good agreement with the experimentally observed frequency dependencies has been obtained. It is shown that BQ coexisting with BL IEC significantly influences on the magnitude and form of dispersion relations. From analytical formula derived, it follows that zero-field optical mode frequency tends to zero as $|{J}_{1}|$ approaches $2{J}_{2}$. The acoustic and optic mode-crossing effect has been observed and it is found that values of crossing fields and frequency gaps strongly increase as ${\ensuremath{\theta}}_{H}$ angles decrease and depend on relative BL and BQ IEC strengths. The BL IEC is of ferromagnetic type with ${J}_{1}\ensuremath{\approx}1.6$ mJ/${\mathrm{m}}^{2}$ for the MLS with ${d}_{\text{Si}}=0.9$ nm, and changes to antiferromagnetic one with ${J}_{1}\ensuremath{\approx}\ensuremath{-}0.9$ mJ/${\mathrm{m}}^{2}$ for the MLS with ${d}_{\text{Si}}=1.4$ nm, while the ${J}_{2}$ parameter of BQ IEC decreases from 1.8 to 1.0 mJ/${\mathrm{m}}^{2}$. The coupling strengths decrease by one to two orders of magnitude for the sample with ${d}_{\text{Si}}=2.4$ nm, but both mode frequencies are still observed and well reproduced by the theory. It is shown that ${J}_{1}$ and ${J}_{2}$ parameters obtained in the TRMOKE experiment coincide within the estimated error bars with the determined from independent measurements of magnetization processes in the static magneto-optical Kerr effect and interpreted with the use of analytical formulas derived. Numerical solutions of coupled Landau-Lifshitz-Gilbert (LLG) equations for acoustic and optic modes, with inclusion of BL IEC, intrinsic Gilbert damping, and spin-pumping damping terms, and extended to include BQ IEC, were performed and fitted to experimental data. It is shown that determined effective damping coefficients on $H$ and ${\ensuremath{\theta}}_{H}$ dependencies for acoustic and optic modes are very well simulated with the use of LLG equation solutions with Gilbert damping, spin-pumping-damping--related effective spin-mixing conductance, and spin-diffusion length parameters included. The dependencies of the parameters on ${d}_{\text{Si}}$ spacer-layer thickness are discussed and compared with available data for other systems.

Mirroring Skyrmions in Synthetic Antiferromagnets via Modular Design.

Skyrmions are promising for the next generation of spintronic devices, which involves the production and transfer of skyrmions. The creation of skyrmions can be realized by a magnetic field, electric field, or electric current while the controllable transfer of skyrmions is hindered by the skyrmion Hall effect. Here, we propose utilizing the interlayer exchange coupling induced by the Ruderman-Kittel-Kasuya-Yoshida interactions to create skyrmions through hybrid ferromagnet/synthetic antiferromagnet structures. An initial skyrmion in ferromagnetic regions could create a mirroring skyrmion with an opposite topological charge in antiferromagnetic regions driven by the current. Furthermore, the created skyrmions could be transferred in synthetic antiferromagnets without deviations away from the main trajectories due to the suppression of the skyrmion Hall effect in comparison to the transfer of the skyrmion in ferromagnets. The interlayer exchange coupling can be tuned, and the mirrored skyrmions can be separated when they reach the desired locations. Using this approach, the antiferromagnetic coupled skyrmions can be repeatedly created in hybrid ferromagnet/synthetic antiferromagnet structures. Our work not only supplies a highly efficient approach to create isolated skyrmions and correct the errors in the process of skyrmion transport, but also paves the way to a vital information writing technique based on the motion of skyrmions for skyrmion-based data storage and logic devices.

Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics.

As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L10-FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub-5 nm sizes. However, the compatibility requirement of preparing L10-FePd thin films on Si/SiO2 wafers is still unmet. In this paper, we prepare high-quality L10-FePd and its SAF on Si/SiO2 wafers by coating the amorphous SiO2 surface with an MgO(001) seed layer. The prepared L10-FePd single layer and SAF stack are highly (001)-textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X-ray diffraction measurement and atomic resolution-scanning transmission electron microscopy, are conducted to explain the outstanding performance of L10-FePd layers. A fully-epitaxial growth that starts from MgO seed layer, induces the (001) texture of L10-FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.