Two types of Ag-clamped Bi2Sr2CaCu2Ox (Bi-2212) thick films have been prepared using the screen-printing method and the melt-solidification process conducted with and without Bi2Al4O9. The melt-solidification process with Bi2Al4O9 leads to the critical-current density (JC) having a sharper dependence on the maximum sintering temperature (TM) and to the rise of the optimum TM value. We compare the microstructure and JC properties of both samples sintered at each optimum TM to investigate the influence of the bismuth vapour dispersed from Bi2Al4O9 during the melt-solidification. The results of inductively coupled plasma analysis, x-ray diffraction analysis and scanning electron microscopy studies show that the composition of the Bi-2212 layer and the precipitation of the impurities for both samples are almost the same. The intergranular coupling of the Ag-clamped sample is independent of the existence of the bismuth vapour during the melt-solidification, which is the exact opposite of the previous result obtained for a thick film with a single Ag substrate. On the other hand, it is found that the intragranular pinning of the Ag-clamped sample is damaged by the melt-solidification with Bi2Al4O9. We speculate that the degradation of the intragranular pinning is caused by the trapped oxygen between the Ag substrates at high temperatures during the melt-solidification process.