Semiconductor Interface Research Articles

Effect of structure on semiconducting properties of a small molecule n-type organic semiconductor: Phenyl-C61-butyric acid methyl ester

The fullerene-based derivative phenyl-C61-butyric acid methyl ester (PCBM) has attracted attention as an n-type transistor channel and an organic photovoltaic material due to its solution processability, stability, and high electron mobility. However, disorder in solution-processed PCBM thin films makes understanding of charge carrier transport mechanisms difficult. We have fabricated PCBM-based field effect transistors and improved device performance by reducing electron trapping at the dielectric–semiconductor interface and improving charge carrier injection. Single-wall carbon nanotubes were successfully integrated into conventional gold electrodes to improve injection efficiency. Meyer–Neldel behavior has been investigated in a study of charge carrier transport in PCBM thin films. Crystallization of PCBM was observed during the measurement. We find that charge carriers hop between molecules in mostly amorphous regions from 145 to 240 K. The transport is facilitated by the formation of more crystallized regions when samples are heated as high as 240 K.

Excitation of THz plasmonic eignmode of parallel plain waveguide by using GaAs material

A Terahertz wave incident on waveguide made up of two parallel thin metal plates sandwiching a thin region of GaAs semiconductor, excites a surface plasma wave (SPW), at the metal–semiconductor interface. As the frequency of SPW increases the real part of the propagation vector increases linearly where the imaginary part of the propagation vector decay parabolically. It is also observed that the distortion of the pulse due to the Terahertz wave (THz) has different component of different phase velocity. The proposed methodology entails the generation of terahertz plasmonic eigenmodes within a parallel planar waveguide composed of GaAs material. The areas of focus in this field include THz Waveguiding and Routing, THz Modulators and Switches, THz Sensing and Imaging and THz Integrated Photonics.

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

The effects of electric polarization and defect energy levels induced by C4+ irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes (SBDs) are discussed. The parameters of the SBDs were extracted from capacitance–voltage (C–V) and current–voltage (I–V) measurements, the deep level transient spectroscopy (DLTS) was used to identify defect energy levels. In addition, the dielectric function and energy band structure of 4H-SiC were calculated using a first-principles approach to verify the enhancement of polarization and the origin of the defect energy levels. The results show that the net (donor) carrier concentration (N d) increases with the increase of irradiation fluence, which is caused by the competition between irradiation-induced defects and the polarization effect. On the one hand, Z 1/2 is determined by DLTS. It is related to the doubly negatively (2-|0) charged state of V c (carbon vacancy), which is a double acceptor. The intensity of the Z 1/2 peak increases with increasing irradiation fluence, which means that the defects caused by irradiation should reduce the N d. On the other hand, the polarization effect does exist and it becomes stronger with the increase in the irradiation fluence, which makes the N d increase. Obviously, the polarization effect induced by the irradiation is dominant for N d when the depth of ion penetration is in the shallow layer behind the metal–semiconductor (M–S) interface. Irradiation induced electron traps and an uneven distribution of positively charged centers, which can cause ln(I)-V to exhibit a non-linear component before reaching the turn-on voltage. The series resistance (R s), reverse current (I R) increase and the forward current decreases with the increase in irradiation fluence. All these show that the irradiation causes degradation of Ni/4H-SiC SBD performance.

Exciton Dissociation, Charge Transfer, and Exciton Trapping at the MoS2/Organic Semiconductor Interface

Hybrid inorganic–organic semiconducting devices consisting of monolayer transition metal dichalcogenides (TMDs) represent a new frontier in advanced optoelectronics due to their high radiative efficiencies and capacity to form flexible p–n junctions with inherent device tunability. However, understanding how excitons and charges behave at the interface between TMDs and organic systems, a key requirement to advance the field, remains underexplored. Herein, a heterostructure consisting of a highly conjugated organic system, 9-(2-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (ANNP), and monolayer molybdenum disulfide (MoS2) on quartz is elucidated via transient absorption and photoluminescence spectroscopies. Upon direct excitation of MoS2 at 532 nm, hole transfer to ANNP of ∼5 ps and a charge separation time constant of ∼2.4 ns are observed. When the sample is excited at 400 nm (where both ANNP and MoS2 absorb), a self-trapped exciton within ANNP is formed. The emission of the self-trapped exciton is long-lived compared to the exciton lifetime of ANNP, decaying within 20 ns. The trapping of the ANNP exciton is caused by structural deformities of the ANNP crystal lattice when grown on MoS2, which are removed by annealing the film. These observations highlight how exciton dissociation and charge transfer dominate at the interface of ANNP and MoS2 whereas the exciton dynamics within ANNP are prone to the formation of trap states brought about by crystal defects within the film. These insights will aid in future developments of TMD-containing optoelectronics.

Surface defects related to polishing cycle in ß-Ga2O3 crystals grown by floating zone

We report an investigation on ß-Ga2O3 Schottky barrier diodes performed on substrates grown by floating-zone method using structural characterization techniques (secondary-ion mass spectrometry, inductively coupled plasma-mass spectroscopy, and atomic force microscopy) and electrical measurements (current-voltage, capacitance-voltage, Hall effect, and capacitance deep-level transient spectroscopy). Four distinct electron trap levels labeled ES, E1, E2, and E3 were found in the range of 1 eV below the Ga2O3 conduction band minimum. Among them, E1, E2, and E3 show signatures similar to those reported in the literature for Czochralski and edge-defined film-fed grown ß-Ga2O3 substrates. Trap ES was found near the surface, and we could establish a link between this defect and the damage induced by the substrate polishing technique. The level related to ES was identified at ∼0.31 eV below the conduction band minimum. An energy band above 0.31 eV was also detected and is associated with states at the metal–semiconductor interface. We demonstrated that the interface states and surface deep traps are not uniformly distributed on the ß-Ga2O3 surface. Furthermore, they contribute to the reverse leakage current and the on-state conduction degradation of the diodes.

Au-functionalized MoO3 nanoribbons towards rapid and selective formaldehyde gas sensing at room temperature

The detection of indoor formaldehyde concentration attracted great attention owing to its serious harm to human bodies. Traditional semiconductor formaldehyde sensors are still suffering from high working temperature and slow response and recovery performance. In this work, a room-temperature semiconductor formaldehyde gas sensor with fast response and high selectivity were developed by exploiting the synergistic effect of Au decoration on MoO3 nanoribbons. The metallic Au nanocrystals with size lower than 10 nm were prepared by a chemical reduction method and uniformly distributed on the surface of the [1 0 0] -oriented orthorhombic MoO3 nanoribbons after the surface decoration. The results show that the surface decoration by Au nanoparticles could greatly fasten the response and recovery speed of the sensors at room temperature. Under an optimal composition with Au/Mo atomic ratio of 0.10%, the response and recovery time towards 100 ppm HCHO could be decreased to 4.5 and 3 s. The sample also exhibited high sensitivity and low limit of detection of 1 ppm. Meanwhile, the sensor exhibited highly selective HCHO response with 1–2 magnitude higher sensor response against toluene, ethanal, methanol and acetone. The performance enhancement should be attributed to synergistic effect induced by the surface Au decoration, which not only serves as the catalysts improving the gas adsorption and desorption efficiency, but also introduced additional contribution to the formaldehyde response by forming the metal–semiconductor interface states.

Enhanced Interlayer Charge Injection Efficiency in 2D Multilayer ReS2 via Vertical Double-Side Contacts.

Two-dimensional (2D) van der Waals (vdW) layered materials have provided novel opportunities to explore interesting physical properties such as thickness-dependent bandgap, moiré excitons, superconductivity, and superfluidity. However, the presence of interlayer resistance along the thickness and Schottky barrier in metal-to-2D vdW semiconducting materials causes a limited interlayer charge injection efficiency, perturbing various intrinsic properties of 2D vdW multilayers. Herein, we report a simple but powerful contact electrode design to enhance interlayer carrier injection efficiency along the thickness by constructing vertical double-side contact (VDC) electrodes. A 2-fold extended contact area of VDC not only strongly limits an interlayer resistance contribution to the field-effect mobility and current density at the metal-to-2D semiconductor interface but also significantly suppresses both current transfer length (≤1 μm) and specific contact resistivity (≤1 mΩ·cm2), manifesting clear benefits of VDC in comparison with those in conventional top-contact and bottom-contact configurations. Our layout for contact electrode configuration may suggest an advanced electronic device platform for high-performing 2D optoelectronic devices.

Controllable fabrication of Bi4Ti3O12/C/Bi2S3/MoS2 heterojunction with effective suppression of Bi2S3 assisted by amorphous carbon interlayer for significantly enhanced photocatalysis

BackgroundFabricating heterojunctions by combining with MoS2 is efficient to boost the visible light photocatalytic activity of Bi4Ti3O12 (BTO) but limited by the concurrent formation of Bi2S3 nanorods by in-situ ion exchange reaction. MethodsAn amorphous carbon interlayer that can effectively protect the BTO fibrous structure and suppress the Bi2S3 generation was introduced to construct Bi4Ti3O12/C/Bi2S3/MoS2 (BCBM) composites with enhanced photocatalytic activity. The BCBM fibers were fabricated by electrospinning and subsequent hydrothermal growth of carbon and MoS2. Significant findingsOwing to the important roles of carbon interlayer to keep the integrity of the BTO fibrous structure and provide charge transfer channel, fast separation of photoinduced carriers happens on the semiconductor interface between BTO and MoS2 to improve the visible light photocatalytic activity. The optimum BCBM displays a photocatalytic efficiency of 88.4% and apparent constant of 0.0148 min−1 towards degrading RhB, which are much higher relative to the Bi4Ti3O12/Bi2S3/MoS2 composites prepared without the carbon interlayer. Moreover, it is demonstrated that the thickness of carbon interlayer is crucial for fabricating high-performance BTO heterojunctions with MoS2. The design and results in this work may broaden the horizon to construct the Bi-based semiconductor photocatalyst with high photocatalytic performance.

Morphology, Energy Level Alignment, and Charge Transfer at the Protoporphyrin IX-Semiconductor Interface.

The combination of molecular catalysts and semiconductor substrates in hybrid heterogeneous photo- or electrocatalytic devices could yield synergistic effects that result in enhanced activity and long-term stability. The extent of synergy strongly depends on the electronic interactions and energy level alignment between the molecular states and the valence and conduction band of the substrate. These properties of hybrid interfaces are investigated for a model system composed of protoporphyrin IX (PPIX) as a stand-in for molecular catalysts and a variety of semiconductor substrates. Monolayers of PPIX are deposited using Langmuir-Blodgett deposition. Their morphology is studied in dependence of the deposition surface pressure to achieve a high-quality, dense coverage. By making use of ultraviolet-visible spectroscopy and ultraviolet photoelectron spectroscopy, the band alignment is determined by the vacuum level and incorporates an interface dipole of 0.4 eV independent of the substrate. The HOMO, LUMO, and LUMO+1 levels were determined to be at 5.6, 3.7, and 2.7 eV below the vacuum level, respectively. The quenching of PPIX photoluminescence in dependence of the potential gradient between excited state and electron affinity of the semiconductor substrates is overall in good agreement with electron transfer processes occurring at very fast time scales on the order of femtoseconds. Nevertheless, deviations from this model become apparent for narrower band gap semiconductors, which points to an additional relevance of other processes, such as energy transfer. These findings highlight the importance of matching the semiconductor to the molecular catalyst to prevent undesirable deactivation pathways.

Investigation of the metal–semiconductor interface by equivalent circuit model in zinc phthalocyanine (ZnPc) based Schottky diodes and its charge transport properties

In this report, the ZnPc-based metal–semiconductor (MS) junction Schottky devices (Al/ZnPc/ITO) were fabricated using an effusion cell coating unit. To study the formation of the MS junction, the surface morphology of the deposited ZnPc thin film was investigated using field-emission scanning electron microscope (FESEM) images. The interfacial properties of the MS junction of the Al/ZnPc/ITO configuration were studied using the ac impedance spectroscopy technique within the frequency range of 50 Hz–10 MHz at room temperature (300 K). The bias-dependent impedance spectroscopy was carried out within the voltage range of ±1 V to establish the equivalent circuit of the MS junction Schottky diodes (SDs). The current vs. voltage (I-V) measurements of the fabricated SDs were also conducted to deduce the diode parameters, namely on/off ratio, photosensitivity, ideality factor, barrier height, and series resistance. The charge transport parameters including dc conductivity, mobility and transit time of the charge carriers were also estimated employing the spatial-charge limited current (SCLC) theory, which illustrates the enhanced carrier’s mobility and consequently, the device performance after light irradiation.

Photoelectret effect in polymer-AIIBVI (CdS, ZnS) composites of photosensitive semiconductors

The photoelectret effect in composite heterostructures consisting of polar (fluorinecontaining) and non-polar (polyolefins) polymers - high density polyethylene (HDPE), low density polyethylene (LDPE), F42, F2-ME and the inorganic phase AııBvı (CdS, ZnS) has been studied. It has been established that the difference in photoelectret potentials in a given volume share of the inorganic phase mainly depends on the polarity of the polymer matrix. A possible mechanism of the photoelectret effect formed under the combined action of a strong electric field and light in these composites. It has been experimentally established that the potential barrier formed at the polymer- AııBvı semiconductor interface separates the electric charge carriers formed as a result of the internal photoelectric effect and ensures the formation of an electret potential difference. The electret charge state of polymer- AııBvı composites was studied using the spectrum of thermally stimulated current.

Improved switching stability in SiNx-based RRAM by introducing nitride insertion layer with high conductivity

In this Letter, a Pt/SiNx/TiN/Ta resistive random access memory (RRAM) is proposed, which has low switching voltage, uniform resistance distribution, excellent cycle-to-cycle stability, and excellent nonvolatile performance. As an insertion layer, TiN prevents excessive absorption of nitrogen ions by a Ta electrode and avoids the formation of the unstable metal–semiconductor interface, which significantly reduces cycle-to-cycle variability of SiNx-based RRAM. Due to high conductivity, the TiN layer has a small voltage divider effect when voltage was applied, which helps to achieve low power consumption characteristics. This paper provides a direction for improving performance of nitride-based RRAM, which is useful for further development of highly reliable RRAM.

Not Just Surface Energy: The Role of Bis(pentafluorophenoxy) Silicon Phthalocyanine Axial Functionalization and Molecular Orientation on Organic Thin-Film Transistor Performance.

Understanding the effect of surface chemistry on the dielectric-semiconductor interface, thin-film morphology, and molecular alignment enables the optimization of organic thin-film transistors (OTFTs). We explored the properties of thin films of bis(pentafluorophenoxy) silicon phthalocyanine (F10-SiPc) evaporated onto silicon dioxide (SiO2) surfaces modified by self-assembled monolayers (SAMs) of varying surface energies and by weak epitaxy growth (WEG). The total surface energy (γtot), dispersive component of the total surface energy (γd), and polar component of the total surface energy (γp) were calculated using the Owens-Wendt method and related to electron field-effect mobility of devices (μe), and it was determined that minimizing γp and matching γtot yielded films with the largest relative domain sizes and highest resulting μe. Subsequent analyses were completed using atomic force microscopy (AFM) and grazing-incidence wide-angle X-ray scattering (GIWAXS) to relate surface chemistry to thin-film morphology and molecular order at the surface and semiconductor-dielectric interface, respectively. Films evaporated on n-octyltrichlorosilane (OTS) yielded devices with the highest average μe of 7.2 × 10-2 cm2·V-1·s-1 that we attributed to it having both the largest domain length, which were extracted from power spectral density function (PSDF) analysis, and a subset of molecules with a pseudo edge-on orientation relative to the substrate. Films of F10-SiPc with the mean molecular orientation of the π-stacking direction being more edge-on relative to the substrate also generally resulted in OTFTs with a lower average VT. Unlike conventional MPcs, F10-SiPc films fabricated by WEG experienced no macrocycle in an edge-on configuration. These results demonstrate the critical role of the F10-SiPc axial groups on WEG, molecular orientation, and film morphology as a function of surface chemistry and the choice of SAMs.

Enlightening the bimetallic effect of Au@Pd nanoparticles on Ni oxide nanostructures with enhanced catalytic activity

Bimetallic decoration of semiconductor electrodes typically improves catalytic and sensing performances because of a well-claimed synergistic effect. A microscopic and quantitative investigation of such an effect on energy bands of semiconductor can be really useful for further exploitation. Au, Pd and Au@Pd (core@shell) nanoparticles (10–20 nm in size) were synthesized through chemical reduction method and characterized with scanning and transmission microscopy, Rutherford backscattering spectrometry, cyclic voltammetry electrochemical impedance spectroscopy and Mott–Schottky analysis. The nanoparticles have been used to decorate Ni-based nanostructured electrodes with the aim to quantitatively investigate the effect of decoration with mono or bimetallic nanoparticles. Decorated electrodes show higher redox currents than bare ones and a shift in redox peaks (up to 0.3 V), which can be ascribed to a more efficient electron transport and improved catalytic properties. These effects were satisfactorily modeled (COMSOL) employing a nano Schottky junction at the nanoparticle–semiconductor interface, pointing out large energy band bending (up to 0.4 eV), space charge region and local electric field (up to {10}^{8}mathrm{ V }{mathrm{m}}^{-1}) in bimetallic decoration. Sensing test of glucose and H2O2 by decorated Ni oxide electrodes were performed to consolidate our model. The presence of bimetallic nanoparticles enhances enormously the electrochemical performances of the material in terms of sensitivity, catalytic activity, and electrical transport. The modification of energy band diagram in semiconductor is analyzed and discussed also in terms of electron transfer during redox reactions.

High-low Kelvin probe force spectroscopy for measuring the interface state density.

The recently proposed high-low Kelvin probe force microscopy (KPFM) enables evaluation of the effects of semiconductor interface states with high spatial resolution using high and low AC bias frequencies compared with the cutoff frequency of the carrier transfer between the interface and bulk states. Information on the energy spectrum of the interface state density is important for actual semiconductor device evaluation, and there is a need to develop a method for obtaining such physical quantities. Here, we propose high-low Kelvin probe force spectroscopy (high-low KPFS), an electrostatic force spectroscopy method using high- and low-frequency AC bias voltages to measure the interface state density inside semiconductors. We derive an analytical expression for the electrostatic forces between a tip and a semiconductor sample in the accumulation, depletion, and inversion regions, taking into account the charge transfer between the bulk and interface states in semiconductors. We show that the analysis of electrostatic forces in the depletion region at high- and low-frequency AC bias voltages provides information about the interface state density in the semiconductor bandgap. As a preliminary experiment, high-low KPFS measurements were performed on ion-implanted silicon surfaces to confirm the dependence of the electrostatic force on the frequency of the AC bias voltage and obtain the interface state density.

Poole-Frenkel (PF)-MOS: A Proposal for the Ultimate Scale of an MOS Transistor.

This work reports, for the first time, the phenomenon of lateral Poole-Frenkel current conduction along the dielectric/Si interface of a silicon nanowire metal-oxide semiconductor (MOS) transistor. This discovery has a great impact on the study of device characteristic modeling and device reliability, leading to a new kind of electronic device with a distinct operation mechanism for replacing the existing MOS transistor structure. By measuring the current-voltage characteristics of silicon nanowire MOS transistors with different nanowire widths and at elevated temperatures up to 450 K, we found that the current level in the conventional ohmic region of MOS transistors, especially for the transistors with a nanowire width of 10 nm, was significantly enhanced and the characteristics are no longer linear or in an ohmic relationship. The enhancement strongly depended on the applied drain voltage and strictly followed the Poole-Frenkel emission characteristics. Based on this discovery, we proposed a new type of MOS device: a Poole-Frenkel emission MOS transistor, or PF-MOS. The PF-MOS uses the high defect state Si/dielectric interface layer as the conduction channel and is expected to possess several unique features that have never been reported. PF-MOS could be considered as the ultimate MOS structure from a technological point of view. In particular, it eliminates the requirement of a subnanometer gate dielectric equivalent oxide thickness (EOT) and eradicates the server mobility degradation issue in the sub-decananometer nanowires.

Band-structure tunability via the modulation of excitons in semiconductor nanostructures: manifestation in photocatalytic fuel generation.

Understanding the energetics of electron transfer at the semiconductor interface is crucial for the development of solar harvesting technologies, including photovoltaics, photocatalysis, and solar fuel systems. However, modern artificial photosynthetic materials are not efficient and limited by their fast charge recombination with high binding energy of excitons. Hence, reducing the exciton binding energy can increase the generation of charge carriers, which improve the photocatalytic activities. Extensive research has been dedicated to improving the exciton dissociation efficiency through rational semiconductor design via heteroatom doping, vacancy engineering, the construction of heterostructures, and donor-π-acceptor (D-π-A) interfaces to extend the charge carrier migration, promoting the dissociation of excitons. Consequently, functionalized photocatalysts have demonstrated remarkable photocatalytic performances for solar fuel production under visible light irradiation. This review provides the fundamental aspects of excitons in semiconductor nanostructures, having a high binding energy and ultrafast exciton formation together with promising photo-redox properties for solar to fuel conversion application. In particular, this review highlights the significant role of the excitonic effect in the photocatalytic activity of newly developed functional materials and the underlying mechanistic insight for tuning the performance of nanostructured semiconductor photocatalysts for water splitting, CO2 reduction, and N2 fixation reactions.

Generating spin-triplet states at the bulk perovskite/organic interface for photon upconversion.

Perovskite-sensitized triplet-triplet annihilation (TTA) upconversion (UC) holds potential for practical applications of solid-state UC ranging from photovoltaics to sensing and imaging technologies. As the triplet sensitizer, the underlying perovskite properties heavily influence the generation of spin-triplet states once interfaced with the organic annihilator molecule, typically polyacene derivatives. Presently, most reported perovskite TTA-UC systems have utilized rubrene doped with ∼1% dibenzotetraphenylperiflanthene (RubDBP) as the annihilator/emitter species. However, practical applications require a larger apparent anti-Stokes than is currently achievable with this system due to the inherent 0.4 eV energy loss during triplet generation. In this minireview, we present the current understanding of the triplet sensitization process at the perovskite/organic semiconductor interface and introduce additional promising annihilators based on anthracene derivatives into the discussion of future directions in perovskite-sensitized TTA-UC.

Structural characterization and electronic properties of Ni/rubrene bilayers with alternative stacking sequences.

Recent progress in organic electronics has attracted interest due to their excellent characteristics that include photovoltaic, light emission, and semiconducting behaviours. Spin-induced properties play important roles in organic electronics, while introducing spin into an organic layer in which spin responses, such as a weak spin-orbital coupling and long spin-relaxation time, allows a variety of spintronic applications to be achieved. However, such spin responses are rapidly attenuated by misalignment in the electronic structure of hybrid structures. We report herein on the energy level diagrams of Ni/rubrene bilayers that can be tuned by an alternating stacking. The band edges of the highest occupied molecular orbital (HOMO) levels were determined to be 1.24 and 0.48 eV relative to the Fermi level for Ni/rubrene/Si and rubrene/Ni/Si bilayers, respectively. This raises a possibility of accumulating electric dipoles at the ferromagnetic/organic semiconductor (FM/OSC) interface, which would inhibit the transfer of spin in the OSC layer. This phenomenon is caused by the formation of a Schottky-like barrier in the rubrene/Ni heterostructures. According to the information about the band edges of the HOMO levels, schematic plots of the HOMO shift in the electronic structure of the bilayers are presented. Based on the lower value of the effective uniaxial anisotropy for Ni/rubrene/Si, the uniaxial anisotropy was suppressed compared to that of rubrene/Ni/Si. The characteristics of the formation of Schottky barriers at the FM/OSC interface have an impact on the temperature-dependent spin states in the bilayers.

Graphene/MoSi2X4: A class of van der Waals heterojunctions with unique mechanical and optical properties and controllable electrical contacts

The key solution to achieve high-performance nano-electronic devices depends on solving the contact resistance problem at the metal–semiconductor interface. Here, we construct graphene/ MoSi2X4 (X=N, P, As) van der Waals heterojunctions and investigate their mechanical, electronic, and optical properties systematically, especially focusing on their electrical contact features. It is found that such intrinsic heterojunctions hold a low Schottky barrier height (SBH) and better electrical contact behavior. Particularly, the more ideal electrical contact can be realized by vertical strain and electric field regulations. For example, vertical strain can cause a transition between n-type and p-type Schottky contacts, even leading to a switching from p-type Schottky to p-type Ohmic contacts for graphene/MoSi2X4 (X=P, As) vdWHs, and an applied electric field can make a conversion from Schottky contacts (n-, p-type) to well-defined Ohmic contacts (n-, p-type) for all heterojunctions. Furthermore, physical regulations can induce high-concentration carrier doping in graphene, up to 1013 cm−2, under external electric field, which provides new possibility to design graphene/MoSi2X4-based high-gain transistors. And also shown is that these heterojunctions also possess a reasonable Poisson ratio and high stiffness features, robustly enough to withstand geometrical deformation and mechanical damage, indicating that they are suitable as electrode and nano-device materials.