We analysed the excitation of a surface magnetoplasmon wave by the mode conversion of a p-polarized laser beam over a rippled semiconductor (n-type)-free space interface. The pump surface magnetoplasmon wave exerts a ponderomotive force on the free electrons in the semiconductor, imparting a linear oscillatory velocity at the laser modulation frequency to them. This linear oscillatory velocity couples with the modulated electron density to produce a current density, which develops a resonant surface magnetoplasmon wave in the terahertz region. The amplitude of the terahertz surface magnetoplasmon wave can be tuneable with an external magnetic field and the semiconductor's temperature.