Interfacial Exchange Coupling Research Articles

Origin of perpendicular magnetic anisotropy in Fe0.6Al0.4/Cr0.8Al0.2 metallic superlattice

Abstract In this study, we investigated a perpendicular magnetic anisotropy (PMA) in a ferromagnet/antiferromagnetic stacking structure without using heavy metal elements. The Fe0.6Al0.4/Cr0.8Al0.2/Fe0.6Al0.4 stacked films exhibited perpendicular magnetization. We discussed the origin of the PMA based on the Cr0.8Al0.2 thickness, t Cr-Al (= 0.6 – 3.0 nm) dependences of the uniaxial anisotropy energy density K u, elastic strain ε 1 – ε 3, and unit cell volume V of the Fe0.6Al0.4 and Cr0.8Al0.2 layers. The K u value was approximately 25 kJ/m3, independent of t Cr-Al. The positive ε 1 – ε 3, i.e., the tensile strain in the Cr0.8Al0.2 layer can promote the PMA. The possible degradation of PMA due to the lattice relaxation with increasing t Cr-Al could be compensated by recovering the Cr magnetic moment. Our analysis suggests that PMA is caused by interfacial exchange coupling between ferromagnetic Fe0.6Al0.4 and antiferromagnetic Cr0.8Al0.2.

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets

Spin pumping has significant implications for spintronics, providing a mechanism to manipulate and transport spins for information processing. Understanding and harnessing spin currents through spin pumping is critical for the development of efficient spintronic devices. The use of a magnetic insulator with low damping enhances the signal-to-noise ratio in crucial experiments such as spin-torque ferromagnetic resonance (FMR) and spin pumping. A magnetic insulator coupled with a heavy metal or quantum material offers a more straightforward model system, especially when investigating spin-charge interconversion processes to greater accuracy. This simplicity arises from the absence of unwanted effects caused by conduction electrons unlike in ferromagnetic metals. Here, we investigate the spin pumping in coupled ferrimagnetic (FiM) Y3Fe5O12 (YIG)/Tm3Fe5O12 (TmIG) bilayers combined with heavy-metal (Pt) using the inverse spin Hall effect. It is observed that magnon transmission occurs at both of the FiMs FMR positions. The enhancement of spin pumping voltage (Vsp) in the FiM garnet heterostructures is observed. The plausible reason might be the interfacial exchange coupling between FiMs. The modulation of Vsp is achieved by tuning the bilayer structure. Further, the spin mixing conductance for these coupled systems is found to be ≈1018 m−2. Our findings describe a coupled FiM system for the investigation of magnon coupling providing opportunities for magnonic devices.

Sweat-enhanced adhesive hydrogel enables interfacial exchange coupling for wearable strain sensor

PVA-based wearable hydrogels have emerged as promising candidate for motion sensors due to their skin-like softness and unique biocompatibility. However, an open question is whether and how the strain-sensitive hydrogel designing can prevent adhesive performance loss caused by sweat between devices and human-skin and reduce interfacial failure. Herein, a versatile sweat-enhanced adhesive hydrogel-based motion sensor (VDBA) paradigm is engineered consisting of sweat sensitivity and self-adhesive function components. Taking advantage of catechol chemistry inspired mussel, the VDBA hydrogel enhances substrate adhesion behavior. The borate ions (B(OH)4−) are found to efficient condensation form borate ester groups with phenolic hydroxyl. Interestingly, human sweat pH serves as a trigger for borate ester bonds protection-deprotection, whereby partial catechol primarily functions in non-sweating states and significantly activates during sweating. The VDBA hydrogel achieves a maximum adhesive strength of 13.45 kPa on skin at non-sweat, however, the maximum bonding strength increases to 24.0 kPa when sweating. The resultant VDBA hydrogel exhibits integration of exceptional mechanical properties and anti-freezing properties. Also, desirable conductivity appears in the hydrogel, allowing outputting accurate and repeatable signals for body motion sensing in various scenarios. Furthermore, VDBA hydrogel is demonstrated for use as a sports training times counter, which can achieve sensitive statistics for stretching and bending movements. This work provides a great hydrogel candidate for various motion sensor applications, particularly beneficial for people with sweaty skin and athletes.

Regulating interfacial exchange coupling in perpendicular magnetized Fe/DO22-Mn3Ga bilayer films

Manganese gallium alloy with DO22-type chemical ordering (DO22-Mn3Ga) thin film represents an intriguing candidate for fabricating the fundamental composition of magnetic devices. In this paper, we prepare the Fe/DO22-Mn3Ga composite films on thermal MgO (100) substrates with different annealing temperatures and report the interfacial exchange coupling between Fe and DO22-Mn3Ga bilayers. Fe layer thickness and annealing temperature are predominant in regulating the nature and strength of interfacial exchange coupling. It is found that there is a ferromagnetic coupling between Fe and DO22-Mn3Ga layers. Their exchange coupling strength can be regulated by changing the Fe soft magnetic layer thickness in a reasonable range. Additionally, the interface diffusion generated from heat treatment induces to change of the nature of exchange coupling. It is possible that Fe replaces Mn site in the DO22-Mn3Ga unit cell due to smaller atomic radius and higher electronegativity compared with Mn. Antiferromagnetic coupling from annealed Fe/DO22-Mn3Ga film with high perpendicular magnetic anisotropy is technologically important to research synthetic antiferromagnetic structure for spin-transfer-torque magnetoresistive random access memory. Our works is helpful for the exploration of interfacial science and development of magnetic devices.

Spin wave resonance frequency in bilayer ferromagnetic films with the biquadratic exchange interaction

Abstract In this work, the dependences of spin wave resonance (SWR) frequency on the surface anisotropy field, interface exchange coupling, symmetry, biquadratic exchange (BQE) interaction, film thickness and the external magnetic field in bilayer ferromagnetic films have been theoretically analyzed by employing the linear spin wave approximation and Green’s function method. A remarkable increase of SWR frequency, except for energetically lower two modes, can be obtained in our model that takes into account the BQE interaction. Again, the effect of the external magnetic field on SWR frequency can be increased by increasing the biquadratic to interlayer exchange ratio. It has been identified that the BQE interaction is of utmost importance in improving the SWR frequency of the bilayer ferromagnetic films. In addition, for bilayer ferromagnetic films, the frequency gap between the energetically highest mode and lowest mode is found to increase with increasing the biquadratic to interlayer exchange ratio and film thickness, and with destroying the symmetry of the system. These results can be used to improve the understanding of magnetic properties in bilayer ferromagnetic films and thus may have prominent implications for future magnetic devices.

Dual mode spin to charge conversion using inverse spin Hall effect in NiFe/FeMn/NiFe multilayer thin films

Microwave devices with more than one operating frequency and their ease of tunability are of great importance for high-frequency information processing. Magnetic thin films offer an unparalleled advantage of engineering different microwave bands that can be precisely tailored and reconfigured externally. Here, novel trilayer structures consisting of NiFe/FeMn/NiFe with varying antiferromagnetic FeMn layer thickness have been investigated by exploring their ferromagnetic resonance (FMR) properties and inverse spin Hall effect (ISHE) responses. Two-step magnetic hysteresis loops are observed for higher FeMn thickness (t ⩾ 12 nm), where the bottom NiFe layer shows a comparatively more significant shift due to the presence of strong interfacial exchange coupling. FMR study reveals two resonant modes associated with the two ferromagnetic layers, which are distinguishable for higher thicknesses of FeMn or at high excitation frequencies. The choice of FeMn thickness determines the operating frequencies, which can be finely tailored by optimizing the FeMn thickness. Gilbert damping parameter is found to be in the range of 0.009–0.012 where the presence of exchange bias adds to the the scattering mechanisms. Prominent ISHE responses are obtained from the bottom NiFe layer as compared to the top NiFe layer. Variation of FeMn thickness also shows a strong influence on the spin pumping ( Vsp ), and perpendicular anisotropic magnetoresistance ( VAMR⊥ ) components. The results are correlated with the efficiency of spin flow and spin-to-charge conversion of the FeMn layer. Our systems can be used as an emerging alternative for microwave detectors and microwave energy harvesters.

Advanced Modeling and Simulation of Multilayer Spin-Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling.

In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift-diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets-a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity. Parallel to this examination, our investigation of the interface exchange coupling within multilayer structures unveils critical insights into the efficacy and dependability of spintronic devices. We particularly scrutinize how exchange coupling, mediated by non-magnetic layers, influences the magnetic interplay between adjacent ferromagnetic layers, thereby affecting their magnetic stability and domain wall movements. This investigation is crucial for understanding the switching behavior in multi-layered structures. Our integrated methodology, which uses both charge and spin currents, demonstrates a comprehensive understanding of MRAM dynamics. It emphasizes the strategic optimization of exchange coupling to improve the performance of multi-layered spintronic devices. Such enhancements are anticipated to encourage improvements in data retention and the write/read speeds of memory devices. This research, thus, marks a significant leap forward in the refinement of high-capacity, high-performance memory technologies.

Influence of the Substrate on the Exchange Coupling of NiO/FeCo Bilayers

Antiferromagnetic/ferromagnetic (AF/F) systems have been extensively investigated due to the importance that interfacial exchange coupling effects have in the development of magnetic storage technologies. Recently, these systems have garnered interest for the potential they have to imprint the magnetic moments of the AF into an F layer, offering the possibility of using it as a read-out mechanism in antiferromagnetic spintronics. In this study, we explored the importance of crystalline orientation and strains induced by the substrate in the exchange coupling properties of NiO/FeCo AF/F bilayers. For that, we have grown NiO/FeCo bilayers on MgO (001) and Al2O3 (0001) substrates varying the FeCo layer thickness. In addition, we have analyzed both deposited samples and those with induced interfacial unidirectional anisotropy. For inducing such interfacial anisotropy, we used a field cooling procedure, heating the bilayers to 650 K and subsequently cooling down to room temperature under the presence of an external magnetic field of 300 mT. We have investigated the effect of the substrate in terms of crystalline orientation and lattice mismatching on the AF/F exchange coupling as well as the dependence of the coercivity and exchange bias on the inverse F layer thickness that is consistent with the interfacial origin of the AF/F exchange coupling. Moreover, the angular dependence of the magnetic properties was explored by using vectorial Kerr magnetometry, confirming the presence of both magnetocrystalline anisotropy, arising from the epitaxial character of the growing process mainly when the bilayer is grown on MgO (001) substrates, and the field cooling (FC)-induced unidirectional anisotropy.

Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet.

Ultrafast manipulation of magnetic order has challenged the understanding of the fundamental and dynamic properties of magnetic materials. So far single-shot magnetic switching has been limited to ferrimagnetic alloys, multilayers, and designed ferromagnetic (FM) heterostructures. In FM/antiferromagnetic (AFM) bilayers, exchange bias (He) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here the possibility of single-shot switching of the antiferromagnet (change of the sign and amplitude of He) with a single femtosecond laser pulse in IrMn/CoGd bilayers is demonstrated. The manipulation is demonstrated in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. The results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.

Incommensurate Spin Density Wave in Antiferromagnetic RuO_{2} Evinced by Abnormal Spin Splitting Torque.

Since the discovery of antiferromagnetism, metallic oxide RuO_{2} has exhibited numerous intriguing spintronics properties such as the anomalous Hall effect and anisotropic spin splitting effect. However, the microscopic origin of its antiferromagnetism remains unclear. By investigating the spin splitting torque in RuO_{2}/Py, we found that metallic RuO_{2} exhibits a spatially periodic spin structure which interacts with the spin waves in Py through interfacial exchange coupling. The wavelength of such structure is evaluated within 14-20nm depending on the temperature, which is evidence of an incommensurate spin density wave state in RuO_{2}. Our work not only provides a dynamics approach to characterize the antiferromagnetic ordering in RuO_{2}, but also offers fundamental insights into the spin current generation due to anisotropic spin splitting effect associated with spin density wave.

Voltage-Controlled Magnon Transistor via Tuning Interfacial Exchange Coupling.

Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics, which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage (V_{g}) applied on a nonmagnetic metal and magnetic insulator (MI) interface that bent the energy band of the MI and then modulated the probability for conduction electrons in the nonmagnetic metal to tunnel into the MI, which can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt-Y_{3}Fe_{5}O_{12}-Pt sandwich was then experimentally realized with V_{g} modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at ±V_{g}) reached 10%/(MV/cm) at 300K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage.

Creation of Room-Temperature Sub-100 nm Antiferromagnetic Skyrmions in an Antiferromagnet IrMn through Interfacial Exchange Coupling.

Antiferromagnetic (AFM) skyrmions are magnetic vortices composed of antiparallell-aligned neighboring spins. In stark contrast to conventional skyrmions based on ferromagnetic order, AFM skyrmions have vanished stray fields, higher response frequencies, and rectified translational motion driven by an external force. Therefore, AFM skyrmions promise highly efficient spintronics devices with high bit mobility and density. Nevertheless, the experimental realization of intrinsic AFM skyrmions remains elusive. Here, we show that AFM skyrmions can be nucleated via interfacial exchange coupling at the surface of a room-temperature AFM material, IrMn, exploiting the particular response from uncompensated moments to the thermal annealing and imprinting effects. Further systematic magnetic characterizations validate the existence of such an AFM order at the IrMn/CoFeB interfaces. Such AFM skyrmions have a typical size of 100 nm, which presents pronounced robustness against field and temperature. Our work opens new pathways for magnetic topological devices based on AFM skyrmions.

Graphene-modulated interfacial exchange coupling across organic molecular/ferromagnet spin interfaces

Graphene-modulated interfacial exchange coupling across organic molecular/ferromagnet spin interfaces

Tuneable Vertical Hysteresis Loop Shift in Exchange Coupled La0.67Sr0.33MnO3‐SrRuO3 Bilayer

AbstractHarnessing extra degrees of freedom at the heterostructure interface is of crucial importance to bring additional functionalities in modern spintronic devices. Here, a vertical hysteresis loop shift (vertical bias) is demonstrated in an exchange biased system of ferromagnetic thin film heterostructure of La0.67Sr0.33MnO3 (10 nm)‐SrRuO3 (SRO) (20 nm), after field cooling with ±1 T below 100 K close to the Curie temperature (TC) ≈125 K of SRO and loop sweeping under ±1 T field. Besides, a positive exchange bias (HEB) is also observed below TC ≈125 K showing a maximum ≈11 mT at 2 K. The vertical shift is modeled closely using micromagnetic simulations and the layers’ thickness dependency is demonstrated. The reason for the shift is attributed to the simultaneous role of the interfacial antiferromagnetic interaction and the hard anisotropy of SRO against the Zeeman energy. Finally, from the experimental and simulation results, a generalized model of controllable and tunable vertical shift is proposed applicable for other material systems possessing glassy phases, uncompensated/canted spins, absent interfacial exchange coupling, etc., and hence can be informative for the use of vertical shift in future spintronic devices.

Transfer of magnetic anisotropy in epitaxial Co/NiO/Fe trilayers

The magnetic properties of Co(10 Å)/NiO(40 Å)/Fe trilayer epitaxially grown on W(110) substrate were investigated with use of x-ray magnetic linear dichroism (XMLD) and x-ray magnetic circular dichroism (XMCD). We showed that magnetic anisotropy of Fe film that can be controlled by a thickness-driven spin reorientation transition is transferred via interfacial exchange coupling not only to NiO layer but further to ferromagnetic Co overlayer as well. Similarly, a temperature driven spin reorientation of Fe sublayer induces a reorientation of NiO spin orientation and simultaneous switching of the Co magnetization direction. Finally, by element specific XMCD and XMLD magnetic hysteresis loop measurements we proved that external magnetic field driven reorientation of Fe and Co magnetizations as well as NiO Néel vector are strictly correlated and magnetic anisotropy fields of Fe and Co sublayers are identical despite the different crystal structures.

Fourfold anisotropic magnetic damping induced by anisotropic spin absorption in amorphous CoFeB/epitaxial IrMn3 bilayers

Magnetic damping rooted in various relaxation processes of spin angular momentum plays a crucial role in determining the energy consumption and the operating speed of emerging spintronic devices. Here, we reported a fourfold anisotropic magnetic damping extrinsically caused by spin current absorption in amorphous ferromagnetic/antiferromagnetic bilayers. The angular dependent broadband ferromagnetic resonance measurements were employed to investigate the effect of interfacial exchange coupling on magnetization dynamics of the CoFeB/IrMn3 bilayers. In addition to the conventional exchange bias, the amorphous CoFeB layer exhibits an induced fourfold magnetic anisotropy along the IrMn3⟨100⟩ axes because of the exchange coupling with the uncompensated IrMn3 moments along IrMn3⟨100⟩ caused by the 3Q antiferromagnetic structure. The magnetic damping of the CoFeB/IrMn3 bilayer also exhibits an obvious fourfold symmetry, which is ascribed to the anisotropic spin absorption caused by the uncompensated IrMn3 moments. The ratio of the fourfold anisotropic magnetic damping decreases dramatically with reducing the interfacial exchange coupling. When the interfacial exchange coupling is isolated by a Cu spacer layer, both the induced magnetic anisotropy and the magnetic damping exhibit a uniaxial symmetry.

Significant role of thermal effects in current-induced exchange bias field switching at antiferromagnet/ferromagnet interface

The current-induced switching of in-plane exchange bias field (<i>H</i><sub>eb</sub>) has many advantages, such as switching without assistance of external magnetic field, excellent immunity to magnetic field, and robust magnetic anisotropy. However, the blocking temperature of the nanoscale antiferromagnet/ferromagnet (AFM/FM) heterostructure is relatively low and susceptible to thermal effects. Therefore, the Joule heating theoretically plays a substantial role in the switching of <i>H</i><sub>eb</sub> driven by current, but its underlying mechanism requires further investigation and verification. We prepare a series of Pt/IrMn/Py heterostructures with varying antiferromagnet IrMn thicknesses and systematically investigate the role of thermal effects in current-driven <i>H</i><sub>eb</sub> switching. These results demonstrate that under millisecond-level current pulses, Joule heating heats the device above the blocking temperature, leading to the decoupling of exchange coupling at AFM/FM interface. Simultaneously, the Oersted field and spin-orbit torque field generated by the current switch the ferromagnetic moments, and then a new <i>H</i><sub>eb</sub> will be induced along the direction of the ferromagnetic moments in the cooling process. Furthermore,in the switching process of <i>H</i><sub>eb</sub>, the anisotropic magnetoresistance curve of the AFM/FM heterostructure exhibits a temperature-dependent two-step magnetization reversal phenomenon. Theoretical analysis indicates that this phenomenon arises from the competitive relationship between exchange bias coupling at AFM/FM interface and direct exchange coupling between the ferromagnetic moments. The findings of this study elucidate the crucial role of thermal effects in the current-driven switching of <i>H</i><sub>eb</sub>, thereby contributing to the advancement of spintronic devices based on electrically controlled <i>H</i><sub>eb</sub>.

Large room-temperature spontaneous exchange bias effect in LaFeO3 micro-polyhedrons

Single-phase materials with exchange bias (EB) effect at room temperature (RT) are very important for future applications in spintronic devices, magnetic storage, and sensors. To explore materials showing the EB effect at RT is an interesting and important issue. In this paper, LaFeO3 micro-polyhedrons composed of an average particle size of 66 nm nanoparticles have been synthesized by annealing LaFe(CN)6 precursors in air at 630 °C for 8 h. Magnetic hysteresis loops show that LaFeO3 micro-polyhedrons present a large spontaneous EB (SEB) effect (∼ 1.5 kOe) at RT after zero-field cooling (ZFC) and a gigant conventional EB (CEB) effect (∼ 5.6 kOe) after field cooling (FC) of 70 kOe. To the best of our knowledge, the current compound shows the largest negative EB field after ZFC at RT among SEB materials discovered so far. The successful fitting of training effect (TE) data with Binek’s model shows that the origin of SEB lies in the interface exchange coupling between different magnetic phases. The interface with the “pinning” effect of antiferromagnetic (AFM) matrix relative to ferromagnetic (FM) clusters exhibits unidirectional anisotropy, which is formed during the initial magnetization process. This interesting finding of the SEB effect at RT in single-phase perovskite LaFeO3 system may open a new direction for possible technological applications.

Tuning In-Plane Magnetic Anisotropy and Interfacial Exchange Coupling in Epitaxial La2/3Sr1/3CoO3/La2/3Sr1/3MnO3 Heterostructures.

Controlling the in-plane magnetocrystalline anisotropy and interfacial exchange coupling between ferromagnetic (FM) layers plays a key role in next-generation spintronic and magnetic memory devices. In this work, we explored the effect of tuning the magnetocrystalline anisotropy of La2/3Sr1/3CoO3 (LSCO) and La2/3Sr1/3MnO3 (LSMO) layers and the corresponding effect on interfacial exchange coupling by adjusting the thickness of the LSCO layer (tLSCO). The epitaxial LSCO/LSMO bilayers were grown on (110)o-oriented NdGaO3 (NGO) substrates with a fixed LSMO (top layer) thickness of 6 nm and LSCO (bottom layer) thicknesses varying from 1 to 10 nm. Despite the small difference (∼0.2%) in lattice mismatch between the two in-plane directions, [001]o and [11̅0]o, a pronounced in-plane magnetic anisotropy was observed. Soft X-ray magnetic circular dichroism hysteresis loops revealed that for tLSCO ≤ 4 nm, the easy axes for both LSCO and LSMO layers were along the [001]o direction, and the LSCO layer was characterized by magnetically active Co2+ ions that strongly coupled to the LSMO layer. No exchange bias effect was observed in the hysteresis loops. In contrast, along the [11̅0]o direction, the LSCO and LSMO layers displayed a small difference in their coercivity values, and a small exchange bias shift was observed. As tLSCO increased above 4 nm, the easy axis for the LSCO layer remained along the [100]o direction, but it gradually rotated to the [11̅0]o direction for the LSMO layer, resulting in a large negative exchange bias shift. Therefore, we provide a way to control the magnetocrystalline anisotropy and exchange bias by tuning the interfacial exchange coupling between the two FM layers.

Fourfold magnetic anisotropy varied by interfacial exchange coupling in epitaxial Fe/IrMn bilayers

We report variable in-plane fourfold magnetic anisotropy in epitaxial exchange-biased Fe/IrMn bilayers with different layer thicknesses. The fourfold magnetic anisotropy of the bilayers continuously decreases and even appears negative as the thickness of the Fe layer decreases, indicating a change in the easy axes from Fe 100 to Fe 110, which can be interpreted by the competition between the intrinsic magnetocrystalline anisotropy along Fe 100 and the extrinsic fourfold magnetic anisotropy along Fe 110 induced by the interfacial exchange coupling to IrMn. As the IrMn thickness increases, the fourfold magnetic anisotropy of the bilayers decreases rapidly from a value close to the intrinsic magnetocrystalline anisotropy of Fe and then gradually reaches saturation. The extrinsic fourfold magnetic anisotropy depends on the amount of the induced uncompensated IrMn spins near the edge of antiferromagnetic domains. In contrast, the exchange bias is determined by the net difference of the opposite uncompensated IrMn spins.