Interfacial Dislocations Research Articles

Improvement of the magnetization and heating ability of CoFe2O4/ NiFe2O4 core/shell nanostructures

Abstract In this study, the effect of the shell thickness on the structural and magnetic properties of the CoFe2O4/NiFe2O4 core/shell is studied. A single-phase core/shell nanocomposite was prepared by the hydrothermal method. The shell thickness was found to control the magnitudes of saturation magnetization and coercive field of the prepared samples. The thickness of the NiFe2O4, which covered cubic CoFe2O4 particles of 15 nm, was 1.8 nm, leading to an increase in the saturation magnetization by 26% and a decrease in the coercive field by 50% compared to bare CoFe2O4. However, a further increase in shell thickness caused interfacial dislocations due to the lattice mismatch between the core and the shell. Finally, the heating ability at high frequency was measured for all samples. Comparing the temperature rise under the influence of AC magnetic field, which indicates power loss, relative to bare CoFe2O4, it was enhanced by 100% for a shell thickness of 26 nm. The results of this study point to potential applications for these samples in the field of magnetic hyperthermia for cancer therapy and drug delivery.

Coherent to semi-coherent transition of precipitates in Van der Merwe epitaxial films

Abstract The interplay of stresses of two coherent systems, specifically a coherent precipitate within an epitaxial film (in Van der Merve growth mode), gives rise to an interesting scenario; wherein the configurational effects and the strain energy landscape are enriched. This leads to an interdependent evolutionary pathway for the coherent to semi-coherent transition. The transition of the film-substrate interface to the semi-coherent state occurs beyond a critical thickness ( t c ) which arises from energy minimization. Using the model example of the precipitation of NbH0.5 precipitate in a Nb/Sapphire epitaxial system, the critical radii ( r film ∗ ) for model geometries have been computed. 3D finite element models have been used to compute the stress state and energetics of precipitates growing in an epitaxial film. The following important observations can be made based on the simulations. (1) The epitaxial stresses can lead to the stabilization of the coherent precipitate. (2) The transition to a semi-coherent film interface, characterized by an array of interfacial misfit dislocations, can energetically favor the semi-coherent state of the precipitate over the coherent state. The magnitude of r film ∗ depends on the spatial coordinates within the film. (3) The presence of Nb–H coherent precipitates can stabilize the coherent state of the film interface.

Effect of carbon content on the microstructure and stress rupture properties of a 4th-generation nickel-based single crystal superalloy

The balance between the stress rupture properties and castability of a 4th-generation Ni-based single crystal superalloy can be achieved by addition of appropriate carbon content. In this work, the effects of carbon content on the microstructure and stress rupture properties of a 4th-generation Ni-based single crystal superalloy were investigated in detail. The results showed that minor carbon addition could aggravate the dendrite segregation, while the addition of carbon had no obvious effect on the rafting and distortion of γ′ phase during stress rupture deformation. At 760 °C/810 MPa and 1100 °C/210 MPa, the stress rupture lives of the three experimental alloys initially increased and subsequently decreased with the increasing carbon content. However, under condition of 1140 °C/137 MPa, the increased carbon content resulted in the reduction of the stress rupture lives of alloy. It was discovered that minor carbon elements addition (0.045 wt%) can promote formation of interfacial dislocation networks and improve creep resistance at high temperatures. At intermediate temperature, the introduction of carbon could reduce the stacking fault (SF) energy of γ matrix, thus facilitating the formation of SFs in γ matrix. The M6Cgranular carbides precipitated at high temperature, which was considered to be beneficial to stress rupture properties.

Highly active and stable oxygen electrode PrBaCo2O5+δ-Ba2CoWO6 enabled by In Situ formed misfit dislocation interface for reversible solid oxide cell

The energy conversion efficiency and durability of the reversible solid oxide cell (RSOC) is restricted by the development of highly active and stable oxygen electrode. Herein, an in-situ formed composite PrBaCo2O5+δ-Ba2CoWO6 oxygen electrode is proposed, which consists of a highly active A-site double perovskite (A-DP) phase and a stable B-site double perovskite (B-DP) phase. Misfit dislocation interface is formed between these two phases, exerting lattice tensile stress on the A-DP phase, which enhances catalytic activity and inhibits Ba segregation. Additionally, the B-DP phase suppresses lattice expansion of A-DP phase through the dislocation interface, thereby improving thermo-mechanical stability. Consequently, the composite electrode demonstrates a low polarization resistance of 0.056 Ω cm2 at 650 °C, impressive stability at 650 °C for 500 h in symmetrical cell tests, and excellent thermal-mechanical stability under 29 thermal cycles. A maximum power density of 0.75 W cm−2 and an electrolysis current density of 0.84 A cm−2 at 1.3 V were achieved at 650 °C by the composite electrode on a 260 μm-electrolyte supported cell configuration, which surpass most of the reported oxygen electrode materials. Furthermore, the cell exhibits excellent operational stability, with low degradation rates of 0.49 × 10−1 mV h−1 and 1.5 × 10−1 mV h−1 in fuel cell and electrolysis cell modes, respectively. This work offers an effective method for designing highly active and stable oxygen electrodes for RSOCs.

Role of dislocation behavior during aging in high-temperature microstructural evolution and creep property of single crystal superalloys

Single-crystal superalloys of turbine blades suffer unexpected performance deterioration, even when manufactured with optimal γ/γ′ phase morphology. This study successfully reproduced this abnormal decrease in high-temperature creep properties by applying optimal aging treatments to a skillfully designed model single-crystal superalloy. Microstructural evidence indicates that interfacial dislocations deposited during aging processes weaken dislocation distribution anisotropy (DDA) in the steady creep stage and place γ′-topological inversion ahead of the competition between γ′-rafting and it, leading to an increase in the minimum creep rate. Through constitutive equations and inductive research, a linear negative correlation between the minimum creep rate and DDA was established. A new concept of “phase-interface freshness” is proposed as a quantitative characterization of interfacial dislocation deposition after preparation to reflect the ability to stimulate the beneficial DDA. These results help us further understand thermal processes such as aging, coating, and welding, providing theoretical support for the design and optimization of thermal processes.

Abnormal densification of dislocation networks during creep deformation in a single crystal superalloy with a small γ/γ′ lattice misfit

Generally, with a large lattice misfit, dislocations tend to move smoothly via cross-slip in γ channels, and rapidly reorient themselves from the 〈110〉 to 〈100〉 direction on the surface of γ′ cuboids to form complete networks in single-crystal superalloys. However, in this study, dense and complete dislocation networks also formed in a single-crystal superalloy with a small γ/γ′ lattice misfit during high-temperature creep deformation. The abnormal densification of dislocation networks was proven to be related to the anomalous enrichment of W and Ta in γ′ phases during the secondary creep stage. Microstructural analysis suggested that anomalous enrichment contributed to an elevated antiphase boundary energy (APBE) of γ′ phases and led to more vacancies within the γ phase, promoting dislocation climb. The higher APBE of γ′ phases impeded dislocations from cutting into γ′ phases, providing enough time for interfacial dislocations to climb through vacancies and rotate to form dense dislocation networks.

Tailoring multi-type nanoprecipitates in high-entropy alloys towards superior tensile properties at cryogenic temperatures

In this work, the quasi-static tensile properties in the face-centered cubic-based Al0.5Cr0.9FeNi2.5V0.2 HEAs containing two types of heterogeneous nanoprecipitates, i.e., dual-lamellar and spherical nanoprecipitates, at ambient (293 K) and liquid nitrogen (77 K) temperatures are thoroughly investigated. The microstructure formed by aging at 873 K comprises L12 and body-centered cubic dual-lamellar (DL) nanoprecipitates. In contrast, aging at 773 K results in solely spherical L12 nanoparticles. Both nanoprecipitates enhance mechanical strength as temperatures drop to 77 K; however, the DL nanoprecipitates additionally boost the work hardening rate, whereas the spherical nanoparticles notably improve ductility. To investigate the underlying deformation mechanisms, we perform interrupted mechanical tests and microstructure characterizations at various strains. The DL nanoprecipitates are observed to go through a multistage work hardening rate response by gradually introducing new boundaries to block dislocation motion, activating the stacking fault (SF) networks, and forming Lomer–Cottrell locks. A combination of interface hardening, dislocation hardening, SF-induced hardening, and precipitation hardening in DL samples leads to stronger hetero-deformation-induced hardening at cryogenic temperatures. In comparison, while samples with only spherical nanoparticles exhibit a monotonous decrease in the work-hardening rate, the spherical nanoparticles can be sheared by dislocations, effectively alleviating strain concentration and thereby enhancing ductility at cryogenic temperatures. Overall, this work provides practical design principles of nanoprecipitates for fine-tuning the balance of strength and ductility in FCC-based HEAs at cryogenic temperatures.

Significantly improved strength of the TiC/TA19 composites via interface and dislocation strengthening

For titanium matrix composites (TMCs) with a dual-phase structure, yield strength (YS) is typically governed by the hard α phase rather than the soft β phase in the matrix alloy. Therefore, by controlling the precipitation of nanoscale secondary α phases (αs) within the β phase, lattice distortion can be induced, leading to dislocation pile-ups at the αs/β phase interface, thereby achieving strengthening of the matrix interface. Herein, TiC/TA19 composites were fabricated using spark plasma sintering, and induced the dispersion and pinning of nanoscale αs phases from the β phase at the αs/β phase interface through multi-pass cumulative rolling, achieving super high strength. In particular, the nanoscale αs phase exhibits two typical Burgers orientation relationships with the β phase, i.e. (0001)αs//(110)β & [11 2− 0]αs//[1− 11]β and (0001)αs//(01 1−)β & [11 2− 0]αs//[1− 11]β, respectively. Compared with the yield strength of sintered composites, when the rolling reduction was 75 %, the YS of TiC/TA19 composites increased by 33.7 %, reaching 1368 MPa, and the elongation was 3.6 %, only 0.7 % lower than that of sintered composites (4.3 %). The enhanced strength is mainly attributed to the αs precipitation for αs/β interface strengthening and dislocation strengthening derived from the TiC and nanoscale αs precipitates. The volume fraction of dynamic recrystallization grains in TiC/TA19 composites increased with the rolling reduction, and more pyramidal <c+a> slip systems were activated to coordinate the plastic deformation of the composites. This study offers a promising route to fabricating superior high-strength TMCs and provides new insights into balancing strength and ductility.

The mechanical coupling effect of α and β phases in Ti6Al4V alloy undergoing laser shock peening: A molecular dynamics study

In the dual- or multi-phase metallic materials, the influence of different microstructural constituents on the plastic strain/stress distribution is still an area of great controversy. Herein, the heterogeneous deformation behavior of α and β phases in Ti6Al4V duplex titanium alloy undergoing laser shock peening (LSP) has been investigated by molecular dynamics simulations, and the corresponding typical microstructural features are characterized at varied strains. Also, the relationship between the theoretical microstructural morphologies and the micro stress is revealed. It evidently indicates that, the grain refinement process can be summarized as: (i) dislocation motions1 interacting with deformation twins in α phases, (ii) a combination of dislocation propagations and the deformation-induced phase transition from β phase to α phase. In addition, unlike the α single-phase titanium alloy, the representative stress – strain curve of α + β titanium alloy presents a gentle fluctuation trend with smaller amplitude value, suggesting an occurrence of the coupling deformation behavior between α and β phases. The initial interfacial dislocation nucleation prefers to site in the α/α interface rather than the α/β interface, then emitting to the interior of α grains. Features of dislocation slip, twin growth, stacking fault, and phase transformation dominate the release of LSP-generated micro stress, while grain and interphase boundaries, as well as dislocation locks, contribute to the increment of the LSP-generated micro stress.

Stress sensitivity and its influence on high-temperature creep behavior of a novel 2nd-generation low-cost nickel based single crystal superalloy

To meet the application requirements under complex service conditions for aero engine blades, the influence of stress-state on creep behavior of a self-designed Re-low Ni-based single crystal superalloy at 1038 °C over a wide stress range of 137–207 MPa was investigated. With applied stress decreasing from 172 to 137 MPa, the creep life rapidly extends by a factor of 2.41, showing strong stress dependence. Further, the creep mechanisms under different stresses are discussed based on microstructural characterization and threshold stress calculation results. With the increasing applied stress, interfacial dislocation networks exhibit sparse and irregular shapes. Particularly, in necking zone of the fractured specimen at 1038 °C/137 MPa, due to the long-duration accumulation of deformation storage energy, dislocation arrays within γ′ rafts gradually evolve into dislocation walls through recombination and annihilation of dislocations, then develop into subgrain boundaries. Finally, some recrystallization grains with large misorientations (>10°) form by subgrain-rotation. Moreover, based on the calculated threshold stress, dislocations climbing can play a major role in creep deformation throughout the steady-state stage under a stress range of 137–207 MPa. Nevertheless, with the arrival of tertiary stage, the increasing actual stress resulted from necking deformation can also promote dislocations to cut or bypass γ′ rafts under lower stresses (137 and 172 MPa), which is consistent with the final evolution of dislocation substructures. Overall, the findings from this work are helpful to understand the high-temperature creep mechanism of low-cost single crystal superalloys, so as to improve the creep resistance of materials.

Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle: A TEM characterization

Two interfacial dislocation networks were obtained in a Si–Si material system by wafer bonding process for low twist angles around 0.2°. For one sample, one of the two initial wafers was rotated with an additional angle of 90° before the bonding. TEM analyses of samples prepared for planar and transverse views show different characteristics in terms of spatial arrangement and dislocation types. Long climbing segments slightly deviated from the [100] axis and short segments a/2<101> are arranged in the dislocation network obtained with an additional rotation and at the lowest twist angle (Ψ = 0.18°) from a <110> axis. Long screw segments a/2<110> and short partial Shockley segments are arranged in the dislocation network obtained without any additional rotation at the highest twist angle (Ψ = 0.27°) from a <110> axis. In both cases, the long and short segments form elongated hexagonal patterns, which are accurately ordered in one set paving the <100> directions or randomly ordered in two perpendicular sets paving the <110> directions, respectively. The results are discussed taking into account the arangement of the surface miscut steps in the initial wafers before the bonding.

The unique influence of 1000 °C high-speed rotation simulated turbine blade working conditions on microstructural degradation of single-crystal superalloy NiAlReRu

Turbine blades are mainly subjected to thermal stress and gradient centrifugal stress in operational conditions. The effects of centrifugal stress on the microstructural degradation of single crystal superalloys under a multiaxial stress state remain unclear. Here, the NiAlReRu component was exposed to high-speed rotation at 20,000 rpm and a high temperature of 1000 °C for 100 h. The analysis indicates that the centrifugal stress causes the distortion of dendrite stems and the aggregation of micropores. The centrifugal stress promotes the formation of interfacial dislocation networks, accompanied by more severe rafting of γ′ phases. These findings provide a comprehensive experimental understanding of the microstructural evolution under simulated turbine blade working conditions, which provides a reference for the subsequent tests under near-service conditions.

High-temperature creep mechanism of Ti-Ta-Nb-Mo-Zr refractory high-entropy alloys prepared by laser powder bed fusion technology

Creep resistance, which is one of the most important deformation modes, is rarely reported for refractory high entropy alloys (RHEAs). The experiment investigated the high-temperature creep mechanism of Ti-Ta-Nb-Mo-Zr RHEA prepared by laser powder bed fusion (LPBF) technology. The high cooling rate of LPBF suppresses most of the elemental segregation, but there are still over-solidified precipitates and a few continuous precipitates (CP). In the range of 923–1023 K, the stress exponent and activation energy were determined to be 3.2–3.4 and 261.5 ± 19.5 kJ/mol, respectively. Compared with other conventional alloys and HEAs, a large reduction of the minimum creep rate is found in the LPBF-built Ti1.5Ta0.5NbZrMo0.5 RHEA, indicating a significant improvement in high-temperature properties. The dislocation tangles at the interface is formed during the creep process and new Zr-rich CP phases are generated in the dislocation tangles region. The interfacial dislocation tangles is the result of the interaction between dislocations and two-phase mismatch stresses. The dislocation tangles prevents dislocations from further cutting the matrix phase, which is very favorable to the high-temperature creep performance. At the same time, the formation of this dislocation tangles greatly accelerates the nucleation process and growth rate of the new CP phase. The present work provides a pathway to design novel HEAs with improved high-temperature creep resistance.

Deformation Mechanisms Dominated by Decomposition of an Interfacial Misfit Dislocation Network in Ni/Ni3Al Multilayer Structures.

Ni/Ni3Al heterogeneous multilayer structures are widely used in aerospace manufacturing because of their unique coherent interfaces and excellent mechanical properties. Revealing the deformation mechanisms of interfacial structures is of great significance for microstructural design and their engineering applications. Thus, this work aims to establish the connection between the evolution of an interfacial misfit dislocation (IMD) network and tensile deformation mechanisms of Ni/Ni3Al multilayer structures. It is shown that the decomposition of IMD networks dominates the deformation of Ni/Ni3Al multilayer structures, which exhibits distinct effects on crystallographic orientation and layer thickness. Specifically, the Ni/Ni3Al (100) multilayer structure achieves its maximum yield strength of 5.28 GPa at the layer thickness of 3.19 nm. As a comparison, the (110) case has a maximum yield strength of 4.35 GPa as the layer thickness is 3.01 nm. However, the yield strength of the (111) one seems irrelevant to layer thickness, which fluctuates between 10.89 and 11.81 GPa. These findings can provide new insights into a deep understanding of the evolution and deformation of the IMD network of Ni/Ni3Al multilayer structures.

The effect of stress gradient on the formation of topologically close packed phases in a Ni-based single crystal superalloy at 1050 °C

The formation of topologically close packed (TCP) phases is detrimental to the mechanical properties of Ni-based single crystal (SX) superalloys, which are used in harsh environments with high temperature and gradient stress caused by centrifugal force during service. In order to study the precipitation behavior of TCP phases in coupling with temperature and stress gradient, a third generation Ni-based SX superalloy is selected to conduct force holding experiments at 1050 °C for 8 hours. Stress gradient can be realized under constant load by designing tensile samples with cross-sectional area continuously changed. The results indicate that the area fraction of TCP phases varies at different positions of the sample, where the effective tensile stress is different. The area fraction of TCP phases decreases at the thinner region of the sample, which means that the amount of TCP phases decreases as applied stress increases. At the thinnest position, where the stress is estimated to be 400 MPa, almost no TCP was observed. The inhibition of stress on the formation of TCP phase may be due to the reduction of Re concentration in the γ matrix, because of the segregation of Re at γ/γ′ phase interfacial dislocation cores and the dissolving of γ′ phase.

Interface dislocation trajectory and long-range strain associated with the migration of semicoherent interfaces

Semicoherent interfaces are frequently developed during phase transformations within materials like steels and Ti alloys. Gaining insight into dislocation motion and the macroscopic strain during the migration of semicoherent interfaces is vital for understanding phase transformations. This research employs molecular dynamics simulations to explore the migration of diverse semicoherent α/β interfaces in pure Ti, providing new insights into the interface dislocation trajectories during interface migration. The simulation vividly reveals complex dislocation interactions within the interface during its migration, leading to substantial deviations in interface dislocation trajectories from individual dislocation slip planes. In such a complex scenario, pre-existing theories rooted in conventional slip planes often produce inconsistent atom conservation or slip-sequence-dependent results. A novel geometric model has been developed, generating self-consistent descriptions of dislocation shear planes and shear displacement during the migration of general semicoherent interfaces while ensuring atom conservation. It introduces a comprehensive framework for assessing the macroscopic strain engendered by interface migration in varied phase transformation processes, including precipitation and martensite transformation. Validation of this model has been accomplished through simulations, and its generality is verified effectively by encompassing the simpler cases addressed by the pre-existing models.

Atomic-scale observation of the interfaces between η and γ matrix in ATI718Plus

In polycrystalline nickel-base superalloys, the presence of secondary phase precipitation at grain boundaries significantly influences mechanical properties. Numerous studies have revealed that the Ni3(Al/Ti)0.5Nb0.5 phase precipitated at grain boundaries can optimize stress rupture and reduce notch sensitivity, However, there was limited consideration given to the presence of the secondary phase within the grains. Herein, the atomic structure of η- Ni3(Al/Ti)0.5Nb0.5 phase in grain was investigated using atomic scale STEM-HAADF, and the η/γ interface and interfacial dislocation during tensile and creep process were also discussed. The results indicated that the η/γ interface exhibited different characteristic features in different stages, and interfacial dislocation interaction occurred during the tensile process, resulting in the formation of a parallel array of dislocations in a nano space. However, dislocations within the η phase and stacking faults (SFs) surrounding the interface are evident for the creep process. STEM-HAADF images also revealed that η/γ interfacial dislocation interaction coordinated the deformation of two phases and provided the driving force of misfit lattice, which positively influenced the mechanical properties of 718Plus. The crystal structure of the η phase was reconstructed using VESTA software, and its ordered structure was found to be consistent with the corresponding HAADF images for B = [21¯1¯0] zone axils. This present work provides valuable insights into the atomic-scale coordinated deformation of secondary phases and matrix.

Interaction between dislocation and heterogeneous interface in Cu/Fe laminated composites based on discrete dislocation dynamics

Bimetal laminated composites (BLCs) exhibit more outstanding mechanical properties than traditional alloys due to the interaction between heterogeneous interface boundary (HIB) and dislocation. However, the underlying physics of the dislocation motion and the strengthening effect has not been uncovered at mesoscopic scale. In this study, the detailed microstructure of the Cu/Fe HIB was obtained by transmission electron microscope (TEM) observation. The dislocation model was established using discrete dislocation dynamics (DDD), and several interactions between the dislocation and HIB were focused on, as well as the intrinsic strengthening mechanisms of the HIB. The results show that different HIB characteristics induce different interaction mechanisms such as absorption, slip transmission, slip on the HIB, emission from HIB and reflection by HIB, resulting in different strengthening effect on the BLCs. The HIB promotes slip of the dislocation emitted from the Fe, while prevents movement of the dislocation emitted from Cu. Since dislocation slip is more difficult in Fe, greater elastic deformation occurs before large-scale expansion of the dislocation, resulting in larger nominal yield strength. The presence of HIB increases the difficulty of dislocation movement compared to the single crystal structure, which in turn improves the overall strength of BLCs. Due to the different dislocation motion and strain gradient, the mechanism of that dislocation slip absorption by the HIB has optimal strengthening effect relative to other interaction mechanisms. The strengthening effect of other interaction mechanisms is influenced by the position of the dislocation emission, the type of interaction mechanism, and the angle between adjacent slip planes, etc. The outcome of present research sheds important insights into the design of HIB strengthening materials, such as multi- and nano- laminated composites.

Achieving better strength-toughness synergy in heterogeneous Cu/Ni/graphene composites: A molecular dynamics simulation

The non-wetting nature of copper (Cu) and graphene, coupled with the brittle behavior of graphene, impedes the strength-toughness synergy in graphene-reinforced Cu matrix (Cu/graphene) composites, limiting their practical applications. Benefiting from interface modification engineering and heterogeneous structure strengthening effects, here a novel strengthening and toughening strategy for Cu/graphene composites by introducing a variable-thickness nickel (Ni) modification layer sandwiched between Cu and graphene (Cu/Ni/graphene) was proposed, and the influence of layer thickness-related structural heterogeneity on mechanical properties and underlying deformation mechanisms were investigated via molecular dynamics simulations. The results revealed that an optimal Ni thickness of 2.44 nm within increased Ni layer thickness enhanced the strength-toughness synergy in the Cu/Ni/graphene composites. This was attributed to altered interface structure, stress distribution, and graphene fracture behaviors due to layer thickness-related deformation behavior. In addition to common strengthening mechanisms like graphene load-bearing effect, interface dislocation nucleation, and interface dislocation blockage strengthening, the layer thickness-dependent semi-coherent Cu/Ni and Ni/graphene heterogeneous interface stress strengthening contributed to extra strength enhancement. Furthermore, cooperative deformation behavior among heterogeneous components improved toughness. The interfacial engineering strategy, achieved by tailoring the modification layer thickness, may pave the way for producing nanostructured metallic composites with extraordinary mechanical properties.

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. This work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ∼107/cm2 after ∼3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.