In this study, we investigated the adhesion strength of SiO2/SiN/TiW/Cu film stacks on silicon by the use of cross-sectional nanoindentation (CSN) technique. The delamination occurred along the SiN/TiW interface as determined by means of SEM and EDX analysis. The critical energy release rate was determined as a quantitative measure of the adhesion strength by application of analytical models as well as Finite Element Method (FEM). Comparative measurements on samples of the same layer composition using the well-established four-point bending (4PB) technique were performed to validate the results of the CSN measurements. FEM was performed to calculate the loading conditions and stress distribution in the samples. The calculations also allowed separating the contribution of plastic and elastic energy in the metallization layers during delamination testing and thereby estimating the value of the interfacial adhesion energy. The experimental results show the good applicability of both the 4PB and CSN method for determining quantitative values of the fracture toughness of thin-film interfaces found in microelectronic components and indicate a good agreement between the two methods.
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