Interdigitated Back Contact Cells Research Articles

Performance Assessment of Cell-Separation Processes for Rear-Contact Solar Cells: Comparison of Indoor and Outdoor Measurements

Half-cell and third-cell modules are the current module technology standard due to their enhanced electrical performance. Also, special module layouts for building or vehicle integrated photovoltaics rely on non-standard cell formats obtained by separation techniques. For either application, interdigitated back-contact (IBC) solar cells are one of the promising cell technologies due to their higher performance and more aesthetic appearance. Thus, a cell separation process, usually employing laser tools, is needed that splits the cells as partial cells are manufactured from full cells. However, this cell cutting also induces additional electrical losses. In this work, we analyze the performance of third cell mini-modules made of IBC cells in comparison to PERC cells as reference. Under standard test conditions (STC), an overall performance gain can only be found for the PERC cells, while current and recombination losses dominate the IBC mini-modules. Outdoor measurements under non-STC conditions reveal reduced performance gains under lower illumination. We show a detailed analysis regarding the performance differences of the IBC and PERC cell technologies at indoor STC and outdoor non-STC test conditions.

Stable passivation of cut edges in encapsulated n-type silicon solar cells using Nafion polymer

In this study, the edge passivation effectiveness and long-term stability of Nafion polymer in n-type interdigitated back contact (IBC) solar cells are investigated. For new module technologies such as half-cut, triple-cut, or shingled modules, cutting of the cells introduces unpassivated edges with a high recombination rate and this limits the module power. These cut edges can be “repassivated” after cutting and in this work Nafion polymer is used to achieve this. First, different edge types, namely emitter edges (n+/n/p+) and back surface field (BSF) edges (n+/n/n+), as well as different cutting techniques such as laser cut and cleave (L&C), thermal laser separation (TLS), and mechanical cleaving are evaluated. It is found that TLS and mechanical cleaving enable good repassivation on both BSF and emitter edges. Second, industrial-size IBC solar cells are made to assess the effect of the edge repassivation on performance. On 1/4-cut M2 size IBC cells with two emitter edges, efficiency is improved by over 0.3%abs. However, an efficiency improvement was not observed for similar cells with BSF edges, due to an insufficient passivation at the bulk edges. Last, the real-world stability of the Nafion repassivation is evaluated in industrially relevant module stacks by laminating the repassivated wafers with ethylvinylacetate (EVA) or polyolefin elastomer (POE) encapsulants and then exposing them to industry standard testing of 1000 h under damp heat conditions (85 °C, 85% relative humidity). The tests reveal that the repassivation is stable in EVA encapsulants but not in POE.

Design of Large Poly‐Si on Oxide Interdigitated Back Contact (POLO IBC) Silicon Solar Cells with Local Al–p+ Contacts in the Constraints of Measurement and Module Integration

Interdigitated back contact (IBC) silicon solar cells with a passivating n‐type poly‐Si on oxide emitter and an aluminum‐doped p+ base contact on M2‐sized Ga‐doped p‐type Cz wafers are reported. The Al‐doped base contact forms during the firing of the printed contacts and allows for a lean process flow. The device optimization balances recombination at the base contacts against resistive losses and respects constraints set by the need of interconnecting cells in a module and contacting the cells temporally by a measurement chuck. A special sample holder is designed for measuring the Isc–Voc curve of the IBC cell with a busbar‐less metal grid. The pseudo‐efficiency is 24.7%. All fingers of each polarity are connected with wires and an efficiency of 22.3% is measured. The comparison of simulations and measurements reveals that the cell has 23.4% efficiency without the series resistance losses due to the wires. A huge part of the resistive losses in the cell are the transport losses of the majorities in the base dissipating a power that corresponds to 0.76%abs efficiency and the resistive losses at the Al‐doped base contact (0.29%abs).

Performance Investigation of a Proposed Flipped npn Microstructure Silicon Solar Cell Using TCAD Simulation

This work aims at inspecting the device operation and performance of a novel flipped npn microstructure solar cell based on low-cost heavily doped silicon wafers. The flipped structure was designed to eliminate the shadowing effect as applied in the conventional silicon-based interdigitated back-contact cell (IBC). Due to the disappearance of the shadowing impact, the optical performance and short-circuit current density of the structure have been improved. Accordingly, the cell power conversion efficiency (PCE) has been improved in comparison to the conventional npn solar cell microstructure. A detailed analysis of the flipped npn structure was carried out in which we performed TCAD simulations for the electrical and optical performance of the flipped cell. Additionally, a comparison between the presented flipped microstructure and the conventional npn solar cell was accomplished. The PCE of the conventional npn structure was found to be 14.5%, while it was about 15% for the flipped structure when using the same cell physical parameters. Furthermore, the surface recombination velocity and base bulk lifetime, which are the most important recombination parameters, were studied to investigate their influence on the flipped microstructure performance. An efficiency of up to 16% could be reached when some design parameters were properly fine-tuned. Moreover, the impact of the different physical models on the performance of the proposed cell was studied, and it was revealed that band gap narrowing effect was the most significant factor limiting the open-circuit voltage. All the simulations accomplished in this analysis were carried out using the SILVACO TCAD process and device simulators.

UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures

AbstractDegradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m−2 (at 340 nm) and 45°C through 4.02 MJ·m−2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (<−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.

Solar Cells with Laser Doped Boron Layers from Atmospheric Pressure Chemical Vapor Deposition

We present laser-doped interdigitated back contact (IBC) solar cells with efficiencies of 23% on an area of 244 cm2 metallized by a screen-printed silver paste. Local laser doping is especially suited for processing IBC cells where a multitude of pn-junctions and base contacts lay side by side. The one-sided deposition of boron-doped precursor layers by atmospheric pressure chemical vapor deposition (APCVD) is a cost-effective method for the production of IBC cells without masking processes. The properties of the laser-doped silicon strongly depend on the precursor’s purity, thickness, and the total amount of boron dopants. Variations of the precursor in terms of thickness and boron content, and of the laser pulse energy density, can help to tailor the doping and sheet resistance. With saturation-current densities of 70 fA/cm2 at sheet resistances of 60 Ohm/sq, we reached maximum efficiencies of 23% with a relatively simple, industrial process for bifacial IBC-cells, with 70% bifaciality measured on the module level. The APCVD-layers were deposited with an inline lab-type system and a metal transport belt and, therefore, may have been slightly contaminated, limiting the efficiencies when compared to thermal-diffused boron doping. The use of an industrial APCVD system with a quartz glass transport system would achieve even higher efficiencies.

Design, realization and loss analysis of efficient low-cost large-area bifacial interdigitated-back-contact solar cells with front floating emitter

Large-area (251.96 cm 2 ) bifacial interdigitated-back-contact (IBC) solar cells are presented in this work. We employ front floating emitter (FFE) to replace the front surface field (FSF) to simplify the process sequences. A simplified process flow is exploited to fabricate the IBC solar cells through industrial equipment and compatible processes. Double side boron diffusion followed by etch-back to form the emitter and lightly doped front surface, reducing high-temperature influence on the bulk lifetime and fabrication complexity. Ion implantation and anneal process is applied for base doping. The cell conversion efficiency reaches 22.92%, independently certificated by Fraunhofer Institute for Solar Energy System CalLab (Fraunhofer ISE). The IBC solar cells feature an open metallization grid, which offers a bifacial response with the bifaciality reaches to 72%. Only one-step mask and opening procedure was used, which greatly simplified the process. These results demonstrate the feasibility of this simplified process for manufacturing low-cost high-efficiency of IBC cells. Key parameters such as surface recombination J 0 , metal contact recombination J 0-metal , contact resistivity of the cells are extracted by specially designed structures. Loss analysis shows that further efficiency improvement can be attained though reducing the contact resistance and metal contact recombination. The results in this work indicates the potential of this novel process for producing low-cost high-efficient IBC solar cells. Large-area efficient IBC solar cells are fabricated by using front floating emitter (FFE), which reducing the process complex and save cost. With the simplified process, the conversion efficiency of 22.92% and bifaciality of 72% are attained. Through special structures and patterns designing, the performance parameters ( J 0 , J 0-metal , and ρ c ) are investigated, and the losses of the IBC cell are analyzed by numerical simulation. • Large-area bifacial interdigitated back contact (IBC) solar cell are fabricated through industrial equipment. • Front floating emitter (FFE) replace of FSF reduce electrical shading effect increase the process tolerance. • Front side etch back to from FFE, ion-implantation to from BSF simplified the process of IBC cell. • Extract key parameters ( J 0 , J 0-metal , ρ c ), Quokka 3D simulator was performed to estimate the performance of solar cell. • The front efficiency is 22.92% and 16.54% on the back, the bifaciality is 72%.

Realization and simulation of interdigitated back contact silicon solar cells with dopant-free asymmetric hetero-contacts

Crystalline silicon (c-Si) solar cells using interdigitated back contact (IBC) configurations are one of the most promising candidates to reach the practical efficiency limits of c-Si solar cells. However, the complexity of the process flow hinders the mass production of the IBC cells with conventional doped regions. One of the simple fabrication methods is to introduce the dopant-free carrier-selective contacts, which utilizes the fabrication processes with low temperature, e.g., the thermal evaporation or the spin coating. In this paper, we investigated efficiency close to 20% silicon IBC solar cells with dopant-free asymmetric hetero-contacts. In this solar cell configuration, the high work function material MoOx was chosen as the hole transporting layer, while the low work function material LiF was chosen as the electron transporting layer, respectively. The simulation results indicate that the perspective efficiency exceeding 22% for this type of cells is achievable with the optimized pitch width and improved passivation quality of the contacts, which has a great potential for the industrialization of IBC solar cells with simple fabrication processes.

Oxygen‐alloyed poly‐Si passivating contacts for high‐thermal budget c‐Si heterojunction solar cells

AbstractCrystalline silicon solar cells with passivating contacts based on doped poly‐Si exhibit high optical parasitic losses. Aiming at minimizing these losses, we developed the oxygen‐alloyed poly‐Si (poly‐SiOx) as suitable material for passivating contacts. From passivation point of view, poly‐SiOx layers show excellent passivation quality and carrier selectivity for both n‐type (iVOC,flat = 740 mV, contact resistance ρc = 0.7 mΩ/cm2, iVOC,textured = 723 mV) and p‐type (iVOC,flat = 709 mV, ρc = 0.5 mΩ/cm2). Optically, due to the incorporation of oxygen, the absorption coefficient of poly‐SiOx becomes much lower than that of doped poly‐Si at long wavelength. Both n‐type and p‐type poly‐SiOx layers are concurrently deployed in front/back‐contacted (FBC) solar cells with a front indium tin oxide (ITO) layer to facilitate the lateral transport of carriers and minimize cell's reflection. A high cell FF of 83.5% obtained in double‐side flat FBC solar cell indicates an efficient carrier collection by these passivating contacts. An active‐area cell efficiency of 21.0% featuring JSC,EQE = 39.7 mA/cm2 is obtained in front‐side textured poly‐SiOx FBC cell, with the potential of further improvement in both VOC and FF. The optical advantage of poly‐SiOx over poly‐Si as passivating contact is also observed with a 19.7% interdigitated back‐contacted (IBC) solar cell endowed with poly‐SiOx emitter and back surface field. Compared to the reference 23.0% IBC solar cell with poly‐Si passivating contacts, the one based on poly‐SiOx passivating contacts shows higher IQE at wavelengths above 1100 nm. This indicates that for both FBC and IBC cells, poly‐SiOx passivating contacts hold potential in enhancing the cell JSC by maximizing the cell spectral response.

Inkjet-Printed In Situ Structured and Doped Polysilicon on Oxide Junctions

We investigate the inkjet printing of liquid silicon ink to form in situ doped and structured passivating contacts. The ink consists of neopentasilane oligomers in solvents and decomposes into amorphous silicon with a short anneal. By printing boron- and phosphorus-doped ink on silicon oxide, polycrystalline silicon on oxide (POLO) junctions for both p-type and n-type polarities (POLO <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) are formed and the saturation current densities as low as 5 fA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> are achieved for n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -POLO junctions. We perform a structured printing in interdigitated back contact (IBC) geometry achieving emitter and base fingers with an average finger height of up to 103 nm. The application of inkjet printing allows for a simplification of POLO and POLO <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> solar cell processing. In particular, for POLO <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -IBC cells, a lean process flow is facilitated.

Admittance spectra of silicon photocells in dark mode

An extended model of silicon photovoltaic cells with localized parameters is presented, including inductance in a series branch. Based on the recorded admittance-frequency spectra, the dependences of the active and reactive components from the bias voltage for PERC (Passivated Emitter Rear Cell), HIT (Heterojunction with Intrinsic Thin-layer solar cells) and IBC (Interdigitated Back Contact cells) elements are reconstructed. The structure of the Nyquist diagrams for the components of admittance spectra is analyzed, which make it possible to visually determine the working scheme of the chain based on the elementary links of the first and second orders.

Influence of light illumination on the potential-induced degradation of n-type interdigitated back-contact crystalline Si photovoltaic modules

We investigate the potential-induced degradation (PID) of n-type interdigitated back-contact (IBC) crystalline Si (c-Si) photovoltaic (PV) modules under a negative bias stress and the influence of light illumination on the PID. IBC PV modules show PID characterized by a reduction in the short-circuit current density (J sc) and open-circuit voltage (V oc) under negative bias stress, while no fill factor (FF) reduction is observed. The degradation may originate from the introduction of sodium (Na) into c-Si and the resulting enhancement of carrier recombination on the surfaces of the IBC cells. Light illumination of 1 sun during the negative bias PID test results in less severe reductions of J sc and V oc. A reduction in the electric field on the surface Si nitride (SiN x ) film, due to carrier generation in the SiN x and the resulting increase in its conductivity, is a possible explanation for the mitigation of the Na-related PID.

Simulation-based roadmap for the integration of poly-silicon on oxide contacts into screen-printed crystalline silicon solar cells

We present a simulation-based study for identifying promising cell structures, which integrate poly-Si on oxide junctions into industrial crystalline silicon solar cells. The simulations use best-case measured input parameters to determine efficiency potentials. We also discuss the main challenges of industrially processing these structures. We find that structures based on p-type wafers in which the phosphorus diffusion is replaced by an n-type poly-Si on oxide junction (POLO) in combination with the conventional screen-printed and fired Al contacts show a high efficiency potential. The efficiency gains in comparsion to the 23.7% efficiency simulated for the PERC reference case are 1.0% for the POLO BJ (back junction) structure and 1.8% for the POLO IBC (interdigitated back contact) structure. The POLO BJ and the POLO IBC cells can be processed with lean process flows, which are built on major steps of the PERC process such as the screen-printed Al contacts and the text{Al}_text{2 }text{O}_text{3 }/text{SiN } passivation. Cell concepts with contacts using poly-Si for both polarities (text{POLO}^2-concepts) show an even higher efficiency gain potential of 1.3% for a text{POLO}^2 BJ cell and 2.2% for a text{POLO}^2 IBC cell in comparison to PERC. For these structures further research on poly-Si structuring and screen-printing on p-type poly-Si is necessary.

Rear side dielectrics on interdigitating p+-(i)-n+ back-contact solar cells − hydrogenation vs. charge effects

Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities − a POLO2-IBC cell − has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.

Investigation of electrical shading loss of bifacial interdigitated-back-contact (IBC) crystalline silicon solar cells with screen-printed electrode

N-type bifacial interdigitated-back-contact (IBC) crystalline silicon solar cells were processed with screen-printed electrodes. The bifacial IBC cells resulted in a drastic decrease of the electrical shading loss at the finger region with decreasing pitch on the rear side. This loss was dominated by the width of the base region. In addition, passivation properties also affected carrier recombination in the base region. A narrower base region and smaller pitch led to higher internal quantum efficiency and low series resistance. Cell efficiency of over 22% was obtained for the bifacial IBC crystalline silicon solar cells with a base region width of 250 μm and pitch of 1250 μm. The IQE values above the emitter and base region at medium wavelengths were over 95% and 90%, respectively. Using these cells, a mini-module showing 19.4% module efficiency with 78.1% FF was created.

Carrier Transmission Mechanism-Based Analysis of Front Surface Field Effects on Simplified Industrially Feasible Interdigitated Back Contact Solar Cells

Interdigitated back contact (IBC) n-type silicon solar cells with a different front surface layer doping concentration were fabricated and studied and the influence of the front surface doping level was analyzed via simulation (PC1D). The IBC cells were processed by industrially feasible technologies including laser ablation and screen printing; photolithography was not used. A maximum efficiency of up to 20.88% was achieved at an optimal front surface field (FSF) peak doping concentration of 4.8 × 1019 cm−3 with a sheet resistance of approximately 95 Ω/square, corresponding to Jsc = 40.05 mA/cm2, Voc = 671 mV and a fill factor of 77.70%. The effects of the front surface doping level were studied in detail by analyzing parameters related to carrier transmission mechanisms such as minority carrier concentration, minority carrier lifetime and the saturation current density of the FSF (J0e). The influence of the front surface recombination velocity (FSRV) on the performance of IBC solar cells with different FSF layer doping concentrations was also investigated and was verified by examining the variation in the minority carrier density as a function of the distance from the front surface. In particular, the impact of the FSF doping concentration on the Jsc of the IBC cells was clarified by considering carrier transmission mechanisms and the charge-collection probability. The trends revealed in the simulations agreed with the corresponding experimental data obtained from the fabricated IBC solar cells. This study not only verifies that the presented simulation is a reasonable and reliable guide for choosing the optimal front surface doping concentration in industrial IBC solar cells but also provides a deeper physical understanding of the impact that front surface layer doping has on the IBC solar cell performance considering carrier transmission mechanisms and the charge-collection probability.

Electroluminescence Characterization of Recombination in Back Junction Silicon Heterojunction Test Structures: Role of the Inversion Layer

Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers' current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers' concentration in the corresponding regions of the device, thus providing information relevant to minority carriers' collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.

Optimization of IBC c-Si (n) Solar Cell Using 2D Physical Modeling

This research paper demonstrates the use of doping concentration effect of front surface field (FSF), back surface field (BSF), and emitter for high-efficiency of n-type monocrystalline silicon (c-Si) interdigitated back-contact (IBC) solar cells using Silvaco TCAD package. The integrated-back contact solar cell is considering as a promising structure due to its high conversion efficiency, thinner substrate, and low-temperature processing of the substrate configuration. From previous research works, the considered IBC cell of 150-μm thick n-type CZ silicon wafers with a half-pitch size of 500 μm is studied and improved for either product quality and lower operating costs. The optimum conversion efficiency of about 24.79% has been achieved with open-circuit voltage up to 726 mV under the AM1.5 spectrum. Furthermore, the solar incident angle plays a critical factor affecting the considered device characteristics and performance of the fixed PV modules.

Metallization Method for Interdigitated Back-Contact Silicon Solar Cells Employing an Insulating Resin Layer and a Ti/Ag/Cu Metal Stack

Interdigitated back-contact (IBC) silicon (Si) solar cells are attracting increased attention due to the potential of higher efficiency that comes from eliminating front-surface shading. However, as sources of recombination loss continue to be reduced due to improved processing and use of high-quality n-type wafers, parasitic absorption in the rear metal can limit cell performance. This paper reports experimental and simulation results that identify the optical advantages of an IBC metallization method, which employs a novolac resin layer to enhance the insulation of the cell from a metal electrode comprising a sputtered Ti/Ag metal stack and plated Cu. The polymer layer can electrically decouple the metal geometry from the doping geometry and also helps to reduce the parasitic absorption at the cell rear surface by increasing the distance between the metal and Si absorber. The optical properties of the Ti/Ag stacks formed over the novolac resin were comparable to those with an Ag reflector; however, the Ti/Ag reflector offered the additional benefit of contact resistivity of < 1 mΩ·cm2 to both the n+ and p+ Si regions of the diffused IBC cells.

Realization of interdigitated back contact silicon solar cells by using dopant-free heterocontacts for both polarities

For crystalline-silicon (c-Si) solar cells, the interdigitated back contact (IBC) structure has been long known as an efficient way to approach the theoretical limit of efficiency. However, the complexity of fabricating this kind of devices as well as the high dependence on expensive vacuum systems pose concerns about their commercial potential. Here, we demonstrate a novel c-Si IBC solar cell featuring dopant-free heterocontacts for both polarities, i.e. a solution-proceeded PEDOT:PSS film as hole-transporting layer (HTL) and an evaporated magnesium-oxide film as electron-transporting layer (ETL). Our innovatively buried ETL method provides substantial simplification on the architecture and fabrication of the IBC cells and makes it possible to adapt solution-proceeded HTLs while keeping good passivation in gap regions. The IBC solar cell shows an efficiency of 16.3%, with a promising short-circuit current density (Jsc) up to 38.4 mA/cm2. A thorough simulation concerning the influence of pitch size, surface recombination rate (at ETL and gap regions) was conducted, revealing a readily achievable Jsc of 41 mA/cm2 and a PCE beyond 22%. Our findings demonstrated a feasibility of using solution method to fabricate high efficiency dopant-free IBC solar cells.