Realization of interdigitated back contact silicon solar cells by using dopant-free heterocontacts for both polarities

Abstract

For crystalline-silicon (c-Si) solar cells, the interdigitated back contact (IBC) structure has been long known as an efficient way to approach the theoretical limit of efficiency. However, the complexity of fabricating this kind of devices as well as the high dependence on expensive vacuum systems pose concerns about their commercial potential. Here, we demonstrate a novel c-Si IBC solar cell featuring dopant-free heterocontacts for both polarities, i.e. a solution-proceeded PEDOT:PSS film as hole-transporting layer (HTL) and an evaporated magnesium-oxide film as electron-transporting layer (ETL). Our innovatively buried ETL method provides substantial simplification on the architecture and fabrication of the IBC cells and makes it possible to adapt solution-proceeded HTLs while keeping good passivation in gap regions. The IBC solar cell shows an efficiency of 16.3%, with a promising short-circuit current density (Jsc) up to 38.4 mA/cm2. A thorough simulation concerning the influence of pitch size, surface recombination rate (at ETL and gap regions) was conducted, revealing a readily achievable Jsc of 41 mA/cm2 and a PCE beyond 22%. Our findings demonstrated a feasibility of using solution method to fabricate high efficiency dopant-free IBC solar cells.