Inter-metal Layer Research Articles

A simple CMOS process compatible high performance parallel-stacked spiral inductor for advanced RF analog circuit applications

A high Q on-chip inductor with some unique structures has been fabricated with 0.13 μm CMOS compatible process for the first time. The unique structures including parallel stacked, line via between inter-metal layers, and use the top signal pad as the under path of the inductor instead of conventional bottom signal pad. These structures offer advantages of reducing resistance, high Q value, simple preparing process and small chip area. Experimental results show that the measured peak Q and peak- Q frequency can attain 7.06 and 1.8 GHz, respectively for the structure with four metal layers in parallel, 15 μm in metal width, 5.5 turns in wire number,and an area of 204×240 μm 2. The results have a better potential for advanced mobile communication applications.

Crystal chemical design of high-Tcsuperconductors on the ground of oxide and intermetal layers

Crystal chemical design of high-<i>T</i>_csuperconductors on the ground of oxide and intermetal layers

Dielectric Properties Of Low Dielectric Constant Polymeric Materials

AbstractMultilevel interconnects for high performance ULSI need low dielectric constant materials for inter-metal layer dielectric, or ILD, to reduce signal propagation delay, power consumption and cross talk noises. We have studied the physical, dielectric and processing properties of a wide variety of promising low dielectric polymeric materials for ILD applications. This paper presents capacitance values measured over a wide range of temperature, and a summary of the measured dielectric properties. The anisotropy 1,2 of dielectric properties were determined experimentally, the vertical (out-of-plane) dielectric properties were determined by MIM (Metal-Insulator-Metal) measurements, and the horizontal (in-plane) dielectric properties were determined by intra-line measurements of sub-half micron serpentine and comb test structures.

Low Dielectric Constant, High Temperature Stable Copolymer Thin Films by Room Temperature Chemical Vapor Deposition

ABSTRACTPolyxylylene thin films grown by the chemical vapor deposition (CVD) process have long been utilized to achieve uniform, pinhole-free conformal coatings. They have recently been cited as possible low dielectric constant films for intermetal layers in high-speed ICs. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We have demonstrated that room temperature copolymerization with previously untested comonomers can be achieved during the CVD process. Copolymerizing chloro-p-xylylene with perfluorooctyl methacrylate results in the dielectric constant at optical frequencies being lowered from 2.68 to 2.19. Copolymerizing p-xylylene with vinylbiphenyl resulted in films which increase the temperature at which oxidative scission occurs from 320 to 450C. Copolymerizing p-xylylene with 9-vinylanthracene resulted in a brittle, yellow film.