Interlayer Electron Transfer Research Articles

Electron Transport and Ion Diffusion in Hydrogen-Bonded Interlayer Cross-Linked Graphene/MXene for Wearable Micro-Sensors.

2D graphene and MXene have attracted much attention in the field of energy storage devices and wearable sensors due to their excellent electrical conductivity and mechanical properties. However, the capacitance of their composites is limited by low electron transport and sluggish ion diffusion due to the lack of electron transport and ion diffusion channels between stacked interlayers. Herein, this work reports the possibility of using disodium terephthalate as an auxiliary conductive bridge to cross-link the interlayer interaction between graphene and MXene from theoretical analysis and experimental verification. The cross-linker with a dicarboxyl group and a conjugated structure forms hydrogen bonds with the hydroxyl groups on the surface of graphene and MXene to provide a pathway for interlayer electron transfer, while inhibiting interlayer stacking and ensuring an effective ion diffusion process. To verify the actual effect of this approach, micro-sensors are assembled by the integration of micro-supercapacitors. The assembled micro-sensors demonstrate real-time monitoring of body movements and temperature signals. This work provides a feasible strategy to promote electron transport and ion diffusion in layered composites to design next-generation multifunctional micro-devices.

Emergence of Interfacial Magnetism in Strongly-Correlated Nickelate-Titanate Superlattices.

Strongly-correlated transition-metal oxides are widely known for their various exotic phenomena. This is exemplified by rare-earth nickelates such as LaNiO3, which possess intimate interconnections between their electronic, spin, and lattice degrees of freedom. Their properties can be further enhanced by pairing them in hybrid heterostructures, which can lead to hidden phases and emergent phenomena. An important example is the LaNiO3/LaTiO3 superlattice, where an interlayer electron transfer has been observed from LaTiO3 into LaNiO3 leading to a high-spin state. However, macroscopic emergence of magnetic order associated with this high-spin state has so far not been observed. Here, by using muon spin rotation, x-ray absorption, and resonant inelastic x-ray scattering, direct evidence of an emergent antiferromagnetic order with high magnon energy and exchange interactions at the LaNiO3/LaTiO3 interface is presented. As the magnetism is purely interfacial, a single LaNiO3/LaTiO3 interface can essentially behave as an atomically thin strongly-correlated quasi-2D antiferromagnet, potentially allowing its technological utilization in advanced spintronic devices. Furthermore, its strong quasi-2D magnetic correlations, orbitally-polarized planar ligand holes, and layered superlattice design make its electronic, magnetic, and lattice configurations resemble the precursor states of superconducting cuprates and nickelates, but with an S→1 spin state instead.

Ultrafast Interfacial Charge Transfer Initiates Mechanical Stress and Heat Transport at the Au-TiO2 Interface.

Metal-semiconductor interfaces are crucial components of optoelectronic and electrical devices, the performance of which hinges on intricate dynamics involving charge transport and mechanical interaction at the interface. Nevertheless, structural changes upon photoexcitation and subsequent carrier transportation at the interface, which crucially impact hot carrier stability and lifetime, remain elusive. To address this long-standing problem, they investigated the electron dynamics and resulting structural changes at the Au/TiO2 interface using ultrafast electron diffraction (UED). The analysis of the UED data reveals that interlayer electron transfer from metal to semiconductor generates a strong coupling between the two layers, offering a new way for ultrafast heat transfer through the interface and leading to a coherent structural vibration that plays a critical role in propagating mechanical stress. These findings provide insights into the relationship between electron transfer and interfacial mechanical and thermal properties.

Interlayer interactions and electron transfer effects on sodium adsorption on 2D heterostructures surfaces

Interlayer interactions and electron transfer effects on sodium adsorption on 2D heterostructures surfaces

Nuclear Quantum Effects Accelerate Charge Separation and Recombination in g-C3N4/TiO2 Heterojunctions.

We combined ring-polymer molecular dynamics (MD) and ab initio MD with nonadiabatic MD to study the effects of nuclear quantum effects (NQEs) on interlayer electron transfer and electron-hole recombination at the g-C3N4/TiO2 interface. Our simulations indicate that NQEs significantly affect electron transfer and electron-hole recombination dynamics, accelerating both processes. NQEs deform the g-C3N4 layer and expedite the movement of carbon and nitrogen atoms, thus, enhancing charge delocalization and interlayer coupling. This improved overlap between electronic state wave functions enhances nonadiabatic couplings, facilitating electron transfer and recombination. In addition to the enhanced nonadiabatic couplings accelerating electron transfer, the presence of NQEs narrows the energy gap and delays decoherence by mitigating overall fluctuations, because of restricted TiO2 movements overwhelming enhanced g-C3N4 fluctuations, thereby making the recombination faster. This work provides valuable insights into NQEs in light-element systems and contributes to guiding the development of highly efficient photocatalysts.

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

We investigate the excitonic species in WS2 monolayers transferred onto III–V semiconductor substrates with different surface treatments. When the III–V substrates were covered with amorphous native oxides, negatively charged excitons dominated the spectral weight in low-temperature near-resonance photoluminescence (PL) measurements. However, when the native oxides of the III–V substrates were reduced, neutral excitons began to dominate the spectral weight, indicating a reduction in the electron density in the WS2 monolayers. The removal of the native oxides enhanced the electron transfer from the WS2 monolayer to the III–V substrate. In addition, an additional shoulder-like PL feature appeared ∼50 meV below the emission of neutral excitons, which can be attributed to the emission of localized excitons. When the III–V substrate surface was passivated by sulfur after the reduction of the native oxides, neutral excitons still dominated the spectral weight. However, the low-energy PL shoulder disappeared again, suggesting the effective delocalization of excitons through substrate surface passivation. Surface engineering of the semiconductor substrates for two-dimensional (2D) materials can provide a novel approach to control the carrier density of the 2D materials, implement deterministic carrier localization or delocalization for the 2D materials, and facilitate the interlayer transfer of charge, spin, and valley currents. These findings open the avenue for novel device concepts and phenomena in mixed-dimensional semiconductor heterostructures.

Photoinduced dynamics during electronic transfer from narrow to wide bandgap layers in one-dimensional heterostructured materials

Electron transfer is a fundamental energy conversion process widely present in synthetic, industrial, and natural systems. Understanding the electron transfer process is important to exploit the uniqueness of the low-dimensional van der Waals (vdW) heterostructures because interlayer electron transfer produces the function of this class of material. Here, we show the occurrence of an electron transfer process in one-dimensional layer-stacking of carbon nanotubes (CNTs) and boron nitride nanotubes (BNNTs). This observation makes use of femtosecond broadband optical spectroscopy, ultrafast time-resolved electron diffraction, and first-principles theoretical calculations. These results reveal that near-ultraviolet photoexcitation induces an electron transfer from the conduction bands of CNT to BNNT layers via electronic decay channels. This physical process subsequently generates radial phonons in the one-dimensional vdW heterostructure material. The gathered insights unveil the fundamentals physics of interfacial interactions in low dimensional vdW heterostructures and their photoinduced dynamics, pushing their limits for photoactive multifunctional applications.

Revealing hidden spin polarization in centrosymmetric van der Waals materials on ultrafast timescales

One of the key challenges for spintronic and quantum technologies is to achieve active control of the spin angular momentum of electrons in nanoscale materials on ultrafast, femtosecond timescales. While conventional ferromagnetic materials and materials supporting spin texture suffer both from conceptional limitations in miniaturization and inefficiency of optical and electronic manipulation, non-magnetic centrosymmetric layered materials with hidden spin polarization may offer an alternative pathway to manipulate the spin degree of freedom by external stimuli. Here we demonstrate an approach for generating transient spin polarization on a femtosecond timescale in the otherwise spin-unpolarized band structure of the centrosymmetric 2H-stacked group VI transition metal dichalcogenide WSe2. Using ultrafast optical excitation of a fullerene layer grown on top of WSe2, we trigger an ultrafast interlayer electron transfer from the fullerene layer into the WSe2 crystal. The resulting transient charging of the C60/WSe2 interface leads to a substantial interfacial electric field that by means of spin-layer-valley locking ultimately creates ultrafast spin polarization without the need of an external magnetic field. Our findings open a novel pathway for true optical engineering of spin functionalities such as the sub-picosecond generation and manipulation of ultrafast spin currents in 2D heterostructures.

Demystifying the modulation effects of the graphene transport layers on the interlayer charge transfer mechanism and broadband optical properties of MoS2/graphene/WSe2 Van der Waals heterojunctions

2D materials and heterojunctions have extraordinary potential in the field of next-generation integrated photodetectors. Recently, inserting graphene (Gra) into Van der Waals heterojunctions as transport layers has been proven to be an effective method for improving the responsivity and response speed of photodetectors. However, how did the physical mechanisms caused by the insertion (interlayer coupling and electron transfer) regulate its optical properties are unclear. Meanwhile, whether the insertion will modulate the broadband optical properties of the heterojunction should also be carefully verified. In this work, the broadband (1.25–6.50 eV) electronic band structures and exciton properties of MoS2/WSe2 and MoS2/Gra/WSe2 were studied using spectroscopic ellipsometry, meanwhile Raman and PL spectroscopy were used to assist in analysis. We found that graphene insertion not only promote the spontaneous charge transfer from WSe2 to MoS2, but also effectively inject electrons into the MoS2 layer, which benefits the interlayer charge separation and net charge accumulation in MoS2. Moreover, the almost stable CP energies near the band edge represent that graphene insertion does not change the electronic band structures of MoS2/WSe2. Furthermore, due to the increasing effective dielectric screening induced by graphene insertion, the exciton binding energies redshift and the exciton transition energy blueshift consequently.

Ultrafast Interlayer Charge Transfer Outcompeting Intralayer Valley Relaxation in Few-Layer 2D Heterostructures.

While 2D transition metal dichalcogenides (TMDs) feature interesting layer-tunable multivalley band structures, their preeminent role in determining the photoexcitation charge transfer dynamics in 2D heterostructures (HSs) is yet to be unraveled, as previous charge transfer studies on TMD HSs have been mostly focused on monolayers with a direct bandgap at the K valley. By ultrafast transient absorption spectroscopy and deliberately designed few-layer WSe2/WS2 HSs, we have observed an ultrafast interlayer electron transfer from photoexcited few-layer WSe2 to WS2, prior to intralayer relaxation to lower lying dark valleys. More interestingly, we have identified an unconventional ∼0.5 ps electron back-transfer process after the initial interlayer electron transfer in HSs with WSe2 layers ≥ 3, regenerating indirect intralayer excitons. The result reveals an ielectron and valley relaxation pathway mediated by interlayer charge transfer in 2D HSs, faster than intralayer relaxation. It also sheds light on the origin of generally observed robust ultrafast interlayer charge transfer in TMD HSs and provides guidance toward optoelectronic and valleytronic devices using few-layer TMDs.

Tensile Strain-Dependent Ultrafast Electron Transfer and Relaxation Dynamics in Flexible WSe2/MoS2 Heterostructures.

Understanding and controlling carrier dynamics in two-dimensional (2D) van der Waals heterostructures through strain are crucial for their flexible applications. Here, femtosecond transient absorption spectroscopy is employed to elucidate the interlayer electron transfer and relaxation dynamics under external tensile strains in a WSe2/MoS2 heterostructure. The results show that a modest ∼1% tensile strain can significantly alter the lifetimes of electron transfer and nonradiative electron-hole recombination by >30%. Ab initio non-adiabatic molecular dynamics simulations suggest that tensile strain weakens the electron-phonon coupling, thereby suppressing the transfer and recombination dynamics. Theoretical predictions indicate that strain-induced energy difference increases along the electron transfer path could contribute to the prolongation of the transfer lifetime. A subpicosecond decay process, related to hot-electron cooling, remains almost unaffected by strain. This study demonstrates the potential of tuning interlayer carrier dynamics through external strains, offering insights into flexible optoelectronic device design with 2D materials.

Pyrazine as a More Efficient Luminophore than Benzene for Producing Red-Shifted and Enhanced Photoluminescence.

The development of organic photoluminescent (PL) materials with red-shifted and enhanced emissions is beneficial to promoting their applications. Luminescent materials based on aromatic heterocycles (e.g., pyrazine) usually have red-shifted and enhanced photoluminescence compared with phenyl-based luminescent materials. In this work, the photoluminescence behaviors of pyrazine and its derivatives (o-dichloro-, o-dicyano-, and dichlorodicyano-substituted) are compared with those of benzene and its derivatives. All compounds exhibit fluorescence emissions ranging from blue to yellow, and the fluorescence emissions of pyrazinyl compounds are more red-shifted than those of phenyl compounds. Except for the o-dicyano-substituted compound, pyrazinyl compounds exhibit stronger fluorescence emissions than corresponding phenyl compounds in both pure substances and ethanol solutions. In addition, both 5,6-dichloro-2,3-dicyanopyrazine (P4) and 4,5-dichloro-1,2-dicyanobenzene (B4) exhibit room temperature phosphorescence, and the maximum delayed emission wavelength is red-shifted from 575 nm of B4 to 637 nm of P4. The energy gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital of the monomers of pyrazinyl compounds are reduced by 0.07-1.37 eV compared with the monomers of phenyl compounds, which is the fundamental reason for the red-shifted emissions of the pyrazinyl compounds. Moreover, compared to B4, the smaller molecular spacing in the P4 crystal structure facilitates interlayer electron transfer and hence the formation of more extended through-space conjugation, resulting in the red-shifted emission of P4. This work proves that pyrazine is a more efficient luminophore than benzene for constructing PL compounds with longer emission wavelengths and higher quantum yields, which are important in guiding the design and preparation of organic PL materials.

Observation of ultrafast interfacial Meitner-Auger energy transfer in a Van der Waals heterostructure

Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe2/graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron injection from graphene to WSe2 is observed after photoexcitation of quasi-free hot carriers in the graphene layer, we establish an interfacial Meitner-Auger energy transfer process following the excitation of excitons in WSe2. By analysing the time-energy-momentum distributions of excited-state carriers with a rate-equation model, we distinguish these two types of interfacial dynamics and identify the ultrafast conversion of excitons in WSe2 to valence band transitions in graphene. Microscopic calculations find interfacial dipole-monopole coupling underlying the Meitner-Auger energy transfer to dominate over conventional Förster- and Dexter-type interactions, in agreement with the experimental observations. The energy transfer mechanism revealed here might enable new hot-carrier-based device concepts with van der Waals heterostructures.

Role of Lanthanides and Bilayer Fe2As2 in the Electronic Properties of RbLn2Fe4As4O2 (Ln = Gd, Tb, and Dy) Superconductors.

The superconducting transition temperatures (Tc) of RbGd2Fe4As4O2, RbTb2Fe4As4O2, and RbDy2Fe4As4O2 are 35 K, 34.7 K, and 34.3 K without doping, respectively. For the first time, we have studied the high-temperature nonmagnetic state and the low-temperature magnetic ground state of 12442 materials, RbTb2Fe4As4O2 and RbDy2Fe4As4O2, using first principles calculations and comparing them with RbGd2Fe4As4O2. We also performed a detailed study of the effects of lanthanides and bilayer Fe2As2. We predict that the ground state of RbLn2Fe4As4O2 (Ln = Gd, Tb, and Dy) is spin-density-wave-type, in-plane, striped antiferromagnets, and the magnetic moment around each Fe atom is about 2 μB. We also found that the structural differences caused by the simple ionic radius have little effect on the properties of these three materials. Different lanthanide elements themselves play a major role in the electronic properties of the materials. It can be confirmed that the effect of Gd on RbLn2Fe4As4O2 is indeed different from that of Tb and Dy, and the presence of Gd is more conducive to interlayer electron transfer. This means that Gd can transfer more electrons from the GdO layer to the FeAs layer compared to Tb and Dy. Therefore, RbGd2Fe4As4O2 has a stronger internal coupling strength of the bilayer Fe2As2 layer. This can explain why the Tc of RbGd2Fe4As4O2 is slightly higher than that of RbTb2Fe4As4O2 and RbDy2Fe4As4O2.

Chiral Kondo lattice in doped MoTe2/WSe2 bilayers.

We theoretically study the interplay between magnetism and a heavy Fermi liquid in the AB-stacked transition metal dichalcogenide bilayer system, MoTe2/WSe2, in the regime in which the Mo layer supports localized magnetic moments coupled by interlayer electron tunneling to a weakly correlated band of itinerant electrons in the W layer. We show that the interlayer electron transfer leads to a chiral Kondo exchange, with consequences including a strong dependence of the Kondo temperature on carrier concentration and anomalous Hall effect due to a topological hybridization gap. The theoretical model exhibits two phases, a small Fermi surface magnet and a large Fermi surface heavy Fermi liquid; at the mean-field level, the transition between them is first order. Our results provide concrete experimental predictions for ongoing experiments on MoTe2/WSe2 bilayer heterostructures and introduces a controlled route to observe a topological selective Mott transition.

Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Van der Waals (vdW) layered two-dimensional (2D) materials, which may have high carrier mobility, valley polarization, excellent mechanical properties and air stability, have been widely investigated before. We explore the possibility of producing a spin-polarized two-dimensional electron gas (2DEG) in the heterojunction composed of insulators MoSi2N4 and VSi2N4 by using first-principles calculations. Due to the charge transfer effect, the 2DEG at the interface of the MoSi2N4/VSi2N4 heterojunction is found. Further, for different kinds of stacking of heterojunctions, lattice strain and electric fields can effectively tune the electronic structures and lead to metal-to-semiconductor transition. Under compressive strain or electric field parallel to c axis, the 2DEG disappears and band gap opening occurs. On the contrary, interlayer electron transfer enforces the system to become metallic under the condition of tensile strain or electric field anti-parallel to c axis. These changes are mainly attributed to electronic redistribution and orbitals’ reconstruction. In addition, we reveal that MoSi2N4/VSi2N4 lateral heterojunctions of armchair and zigzag edges exhibit different electronic properties, such as a large band gap semiconductor and a metallic state. Our findings provide insights into electronic band engineering of MoSi2N4/VSi2N4 heterojunctions and pave the way for future spintronics applications.

Electric Field-Modulated Charge Transfer in Geometrically Tailored MoX2/WX2 (X = S, Se) Heterostructures

Light-induced interlayer charge transfer in staggered-type heterostructures (HSs) in transition-metal dichalcogenides provides the opportunity to improve the performance of optoelectronic applications. Herein, we employ density functional theory to investigate the vertical electric-field-controlled interlayer charge transfer in stacked MoX2/WX2 (X=S, Se) HSs. Upon application of electric field from −3 to 3 V/nm, we observe the band-alignment transition, band inversion, and offset variations in these HSs. Furthermore, these electric fields are found to modulate charge localization/delocalization across the layers, which provides insight into charge transfer. The positive electric field is supposed to localize the charges in WS2, whereas the charges are localized in MoS2 at negative electric field. Based on charge localization/delocalization, our study suggests that the interlayer hole transfer upon MoS2 photoexcitation can be suppressed at higher positive electric fields, whereas electron transfer can be blocked by excitation of WS2. In contrast, negative electric fields (of −3 V/nm) can induce interlayer hole and electron transfer. Owing to the tunability of interlayer charge transfer by means of a vertical electric field, our findings bear paramount importance in modulating electron–hole recombination and charge-transfer time, which is beneficial for future optoelectronic devices.

All-optical control of charge transfer and interlayer excitons in transition metal dichalcogenide heterostructures

An all-optical approach to control interlayer charge transfer and interlayer exciton dynamics is demonstrated using transition metal dichalcogenide heterostructures of ${\mathrm{MoSe}}_{2}/{\mathrm{MoS}}_{2}$ and ${\mathrm{MoSe}}_{2}/{\mathrm{WS}}_{2}$ as examples. In the three-pulse pump-probe experiments, a control pulse injects photocarriers and produces an electric field due to the interlayer charge separation. A pump pulse excites new carriers and their dynamics under the influence of the control-injected carriers and field is time-resolved by measuring differential reflectance of a third probe pulse. In ${\mathrm{MoSe}}_{2}/{\mathrm{MoS}}_{2}$, the interlayer electron transfer time from ${\mathrm{MoSe}}_{2}$ to ${\mathrm{MoS}}_{2}$ decreases with increasing the control-injected carrier density and electric field. The dipole moment of the interlayer excitons is reduced by the control pulse, which can be utilized for ultrafast and all-optical control of interlayer excitons. The recombination of the interlayer excitons is enhanced by the control pulse, which increases the spatial overlap of the electron and hole wave functions. The effect of the control pulse on the interlayer excitons is confirmed in the ${\mathrm{MoSe}}_{2}/{\mathrm{WS}}_{2}$ heterostructure, although its effect on the electron transfer time is not resolvable. These results reveal useful information to understand and control interlayer charge transfer dynamics and provide tools for ultrafast manipulation of electrons in van der Waals heterostructures.

Fulde–Ferrell–Larkin–Ovchinnikov State in Perpendicular Magnetic Fields in Strongly Pauli-Limited Quasi-Two-Dimensional Superconductors

We examine the Fermi-surface effect called the nesting effect for the FFLO state in strongly Pauli-limited Q2D superconductors, focusing on the effect of 3D factors, such as interlayer electron transfer, interlayer pairing, and off-plane magnetic fields including those perpendicular to the most conductive layers. We examine the systems with a large Maki parameter so that the orbital pair-breaking effect is negligible, except for the locking of the direction of the FFLO vector q in the field direction.It is known that the nesting effect for the FFLO state can be strong in QLD systems in which the orbital pair-breaking effect is suppressed by applying the mag. field parallel to the layers. Hence, it has sometimes been suggested that the nesting effect may hardly enhance the stability of the FFLO state for perpendicular fields. We illustrate that, contrary to this view, the nesting effect can strongly stabilize the FFLO state for perpendicular fields as well as for parallel fields when tz is small so that the Fermi surfaces are open in the kz-direction, where tz denotes the interlayer transfer energy. In particular, the nesting effect in perpendicular fields can be strong in interlayer states. For example, in systems with cylindrical Fermi surfaces warped by tz /= 0, interlayer states with Dlt_k prop sin k_z exhibit mu_e Hc=1.65 Dlt_a0 for perpendicular fields, which is much larger than typical values for parallel fields, such as mu_e Hc=Dlt_s0 of the s-wave state and mu_e Hc = 1.28 Delta_d0 of the d-wave state in cylindrical systems with tz=0. The present result could potentially provide a physical reason why the areas in the phase diagrams occupied by the high-field phases for the perpendicular and parallel fields are of the same order in CeCoIn5 and FeSe.

Facile synthesis a novel core–shell amino functionalized MIL-125(Ti) micro-photocatalyst for enhanced degradation of tetracycline hydrochloride under visible light

Abstract Titanium-organic frameworks have been widely appreciated for its photoelectric catalytic properties. However, the weak utilization of visible light by titanium-organic frameworks limits the application. In this paper, a novel core–shell micro-photocatalyst (TPE-2NH2@MIL-125(Ti)) was successfully prepared by the simple one-step alcohol-thermal modification of the nitrogenous organic ligand ((E)-4′,4′’’-(1,2-diphenylethene-1,2-diyl)bis([1,1′-biphenyl]-4-amine), TPE-2NH2) on the surface of MIL-125(Ti) for tetracycline hydrochloride (TC) degradation under visible light. The as-obtained samples were characterized by field emission scanning electron microscopy, transmission electron microscopy, powder X-ray diffractometer, infrared spectra, Brunauer-Emmett-Teller, X-ray photoelectron spectroscopy, UV–visible diffuse reflectance spectra, photoluminescence spectra, zeta potential, high performance liquid chromatography mass spectrometry and electrochemical measurements. The results showed that the hybrid materials had lower band-gap energy and higher electronegativity than pure MIL-125(Ti), as well as rapid and strong response to visible light. Under the irradiation of visible light, the final removal efficiency of TC by TPE-2NH2@MIL-125(Ti) reached about 90% with little interference from the environment pH and even better removal effect was obtained in real water samples. Mechanism studies showed that •O2− and h+ were the main active species in the catalytic process. The enhanced photocatalytic performance is mainly attributed to the rapid photoelectron transfer, Ti4+-Ti3+ interlayer electron transfer, and the synergistic effect between TPE-2NH2 and MIL-125(Ti). As far as we know, this current work first provides a convenient method to improve the photocatalytic performance of titanium metal–organic frameworks (MOFs) by surface coating with amino conjugated organic molecule, and provides a new idea for the degradation of organic matter by hybrid MOFs materials in wastewater.