Resonance enhanced Second Harmonic Generation (SHG) was employed to assess if conduction band electrons in silicon (Si) will promote molecular adsorption of ambient species and how such adsorption depends on temperature. Experiments were performed with three types of Si (n-doped or n-Si, p-doped or p-Si, and undoped Si) at temperatures between 18 and 260 °C and under atmospheres of dry N2 and dry (cylinder) air. All Si types were covered with a 2–4 nm thick native oxide layer. Under N2, all Si types behave similarly, with SHG intensity [I(2ω)] diminishing with increasing temperature. This effect was reversible and attributed to electron–phonon scattering. In the presence of O2, I(2ω) from n-Si at room temperature is enhanced significantly. Neither p-doped Silicon (p-Si) nor undoped Si show similar effects at room temperature, with I(2ω) being independent of gas phase composition. At temperatures ≥175 °C, all three Si types behaved similarly with no dependence on atmospheric O2 content. Varying the amount of O2 above n-Si at room temperature and measuring I(2ω) suggested that O2 adsorption to n-Si could be described with a Langmuir isotherm and an adsorption energy of −0.13 ± 0.05 eV. Increasing n-Si’s oxide thickness (to 600 nm) rendered the substrate insensitive to ambient gas phase composition. Taken together, these findings support a description of Si’s surface electronic structure that is controlled by n-Si conduction band electrons backbonding into the π* orbitals of adjacent O2 and imply that these conduction band electrons can affect adsorption despite the presence of a native oxide film.
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