Efficient Second‐Harmonic Generation with Weak Polarization Sensitivity in Gallium Nitride Metasurfaces via Bound States in the Continuum

Abstract

AbstractBound states in the continuum (BICs) are widely exploited in all‐dielectric metasurfaces to significantly enhance the Q‐factor and second harmonic generation (SHG). However, a higher SHG conversion efficiency is overshadowed by the narrow transparency window of all‐dielectric materials and strict requirement of polarization‐matching. Herein, an augmented SHG assisted is demonstrated by symmetry‐protected quasi‐BICs from z‐cut wurtzite GaN metasurfaces, whose wide transparent range suppresses self‐absorption of second harmonic. Strong resonances emerge under both X‐ and Y‐polarized excitations, where the multipole characters of each eigenmode are quantitatively identified via decomposition simulations. The local field enhancement enabled by the extreme energy confinement of quasi‐BICs contributes to an efficient SHG, recording a conversion efficiency up to 2 × 10−7 at moderately low input peak intensity (≈1 GW cm−2), orders of magnitude larger than bulk GaN. With proper design, the overlapping X‐ and Y‐polarized resonances can support SHG from excitation with arbitrary polarizations. The alleviation of polarization‐matching remarkably enhances the SHG power by 66.2% under unpolarized illumination condition. The results of intense SHG reveal GaN as a promising candidate for high‐performance nanoscale nonlinear photonic devices. The weak polarization sensitivity of the designed structure will chart a novel course for the advancement of next‐generation efficient all‐dielectric metasurfaces.