Insulated Gate Thyristors Research Articles

Characteristics of the base coupled insulated gate thyristor: experiment and analytical modeling

This paper describes the theoretical and experimental characteristics of a new insulated-gate thyristor structure called Base Coupled Insulated Gate Thyristor (BC-IGTH) in which the N-base region in the vicinity of the turn-off gate is prevented from being flooded with carriers in the on-state by controlling the voltage of this area by a NMOS operated by the same gate electrode. The characteristics of the BC-IGTH is experimentally studied and the behavior is explained with the help of analytical equations.

Theoretical and experimental characteristics of the insulated-gate thyristor (IGTH)

A Insulated-Gate Thyristor (IGTH) design consisting of square cells with high density of MOS channels modulating the resistance of the base region of the NPN transistor of the thyristor structure is described. The on-state characteristics of IGTH structures including the effect of the lateral parasitic bipolar transistor are studied with the help of numerical device simulations and are analytically modeled by simple analytical equations. The variation of IGTH characteristics with temperature and electron-irradiation dose is experimentally studied and the behavior is explained with the help of analytical equations. The modeling results were found to be in good agreement with experimental results obtained on many lots of 600 V-1200 V Insulated-Gate Thyristors (IGTH) fabricated with an active area of 1.3 mm/sup 2/-0.35 cm/sup 2/. The analytical models developed can also be applied to design and predict the characteristics of other MOS-gated thyristor structures.

New insulated-gate thyristor structure with MOSFET coupled base regions

A new insulated-gate thyristor (IGTH) structure in which the base of n-p-n transistor is coupled to the base of p-n-p transistor through a MOSFET is described for the first time, In the new structure, called base coupled insulated gate thyristor (BC-IGTH), the parasitic lateral p-n-p carrier injection inherent in previously reported thyristor structures such as the MCT, BRT, and IGTH is absent. The absence of parasitic lateral p-n-p carrier injection results in low on state voltage drop and high controllable current capability for this structure. The turn-on process in the new structure is fundamentally different from other MOS-gated thyristor structures in that in the new structure, the higher gain n-p-n transistor is turned-on first, which then provides the base drive for the lower gain p-n-p transistor. Multicellular 800 V devices of the new thyristor structure were fabricated using a double-diffused DMOS process, and were found to give on-state drop of 1.1 V at 200 A/cm/sup 2/, and controllable currents in excess of 100 A/cm/sup 2/ were obtained by forming MOS-gate controlled emitter-to-base resistive shorts.

A new Insulated-Gate Thyristor structure with turn-off achieved by controlling the base-resistance

A new Insulated-Gate Thyristor (IGTH) design for achieving high controllable current capability is described. The design consists of square cells with high density of MOS-channels modulating the resistance of the base region of the NPN transistor of the thyristor structure. The diagonal regions between the square cells is used as the turn-on regions while the other regions under the MOS gate between the cell diffusions are connected by P/sup -/ diffusion to obtain a MOS-gate controlled low resistance path for turn-off. The IGTH was fabricated using a double-diffused DMOS process and 1200 V devices with controllable currents in excess of 150 A was obtained. >