Abstract
This paper describes the theoretical and experimental characteristics of a new insulated-gate thyristor structure called Base Coupled Insulated Gate Thyristor (BC-IGTH) in which the N-base region in the vicinity of the turn-off gate is prevented from being flooded with carriers in the on-state by controlling the voltage of this area by a NMOS operated by the same gate electrode. The characteristics of the BC-IGTH is experimentally studied and the behavior is explained with the help of analytical equations.
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