InP Quantum Dots Research Articles

Advancements in Eco‐Friendly Colloidal Quantum Dots and their Application in Light Emitting Diodes: Achieving Bright and Color‐Pure Emission for Displays

AbstractSolution‐processable colloidal quantum dots (QDs) are regarded as promising light emitters for next‐generation displays owing to their high photoluminescence quantum yield (PLQY) and broad color tunability. Even though cadmium (Cd)‐based QDs and relevant electroluminescent light‐emitting diodes (LEDs) progressed rapidly, their commercial deployment remains prohibited due to potential environmental concerns. In this review, recent advances in synthesizing eco‐friendly, bright, and color‐pure emitting QDs including InP, ZnSeTe, and AgInGaS2 (AIGS) QDs toward high‐performing LEDs are presented. In particular, the synthetic strategies such as regulating the composition, core/shell structure, and surface ligands of QDs for enhancing the PLQY and reducing the spectral bandwidth are comprehensively discussed. Moreover, various techniques to obtain high‐performance QDs‐based LEDs (QLEDs) involving device architecture and interface engineering as well as modification in electron and hole transport layers are overviewed. Finally, the existing challenges and outlook regarding the optimization of QD's synthesis and optical properties for boosted QLEDs device performance are put forward to enable prospective advanced displays.

High color rendering index WLEDs enabled by multi-band tuning of InP quantum dots

Quantum dots (QDs) represent a significant class of fluorescent materials, offering the potential to reduce power consumption and enhance the color rendering index (CRI) of white light-emitting diode (WLED) devices. However, the presence of toxic elements such as Cd and Pb in traditional fluorescent QDs limits their widespread commercial application. Compared to the broad emission characteristics of environmentally friendly AgInS2 and CuInS2 QDs, the narrower linewidth of InP-based core-shell QDs is advantageous for developing WLED devices with a higher CRI. In this study, we employed a multistage heating method to synthesize a series of amino-phosphine-based InP/ZnSe core-shell QDs, which exhibited emission wavelengths ranging from 535 to 650 nm, narrow emission linewidths of 43-47 nm, and high photoluminescence quantum yields of 60%-80%. Subsequently, six different color QDs are used to fabricate a WLED device. The best WLEDs show not only bright warm light (correlated color temperature = 3323 K) with a maximum luminous efficacy of 74.1 lm W-1, but also excellent color quality (CRI Ra = 93, as well as R9 = 94.8, and R13 = 97.1). These results indicate remarkable progress in InP-based WLEDs for high-quality lighting applications.

Improvement of photoluminescence efficiency and photoelectricity performances of InP quantum dots through the passivation of surface defects

At present, InP quantum dot-sensitized solar cells (QDSSCs) still show moderate power conversion efficiency (PCE), because of charge recombination on the surface defects. Herein, we report a method to reduce the surface defects of InP quantum dots by Ga-doped and ZnS shell coating, which improves the performance of InP QDSSCs. Simultaneous enhancement of photoluminescence (PL) and photo-electricity performance of Ga doped InP (Ga:InP) quantum dots (QDs), Ga:InP/ZnS core/shell QDs were achieved. The maximum PL quantum yield of Ga:InP QDs and Ga:InP/ZnS QDs reached 14.9% and 76%, respectively. The maximum PCE value of Ga:InP and Ga:InP/ZnS QDSSCs reached 3.0% and 4.5% under 1 sun illumination (AM 1.5 G, 100 mW/cm2), respectively. The J-V curve revealed that Ga doping and ZnS shell coating reduced the surface recombination and increased the cell efficiency and stability. These results provided a new approach to obtaining quantum dot materials with high luminescence properties or good solar cell performances.

Suppression of the hole trap for high-quality amino-phosphine based InP quantum dots

InP quantum dots (QDs) have emerged as promising nanomaterials in various fields due to their exceptional optical properties. However, its wide emission linewidth limits further application. In this study, we synthesized high-quality InP/ZnSe/ZnS QDs by suppressing hole defects. The unreacted In precursors during nucleation easily enter ZnSe in the subsequent shelling process, forming a hole trapping center that adversely affects the photo-excitons radiative recombination. Our results demonstrate that the presence of In ions in ZnSe shell enhances exciton-phonon coupling, broadens the fluorescence emission spectrum, and weakens exciton binding energy. The optimized InP QDs exhibit a line width of 44 nm and 90% PLQY at 630 nm. Furthermore, our investigation into the interaction between shell hole defects and core exciton function provides valuable insights for designing and preparing another high-performance core-shell heterojunction QDs.

InP QDs modified GaAs/PEDOT:PSS hybrid solar cell with efficiency over 15.

GaAs heterojunction solar cells are known as promising substitutions for traditional GaAs solar cells for their low cost and performance potential. Nevertheless, the further performance enhancement is hindered by insufficient spectral absorption and nonradioactive recombination. In this work, an InP quantum dot (QD) modified GaAs/PEDOT:PSS solar cell is designed to enhance spectrum utilization and suppress the nonradioactive carriers loss and the solar cell efficiency at 15.08% is achieved. Furthermore, InP QDs used in this work are synthesized by a novel hydrothermal method. During the synthesis process, β-cyclodextrin (β-cyc) was introduced into the reactants and acted as a reaction cell, isolating water and oxygen, enabling the reaction to proceed in ambient air. InP QDs synthesized by this method can achieve band engineering by altering reactant ratios, thereby effectively serving as both a Luminescent Solar Concentrator (LSC) and a Front Surface Field (FSF) in GaAs/PEDOT:PSS solar cells. This work demonstrates an inspiring way to synthesize InP QDs and optimize the performance of GaAs hybrid solar cells.

Enhancing device characteristics of InP quantum dot LED through structural modification with polyethylene glycol blend

This study explored the integration of polyethylene glycol (PEG) into InP-based quantum dot (QD) light-emitting diodes (LEDs). By 5 wt% of PEG 400 blended into the QD emission layer (EML), we achieved an enhancement in both current efficiency (100 %) and external quantum efficiency (91 %). X-ray reflectivity revealed significant morphological changes in the QD EML upon PEG incorporation, primarily manifesting as increased thickness in the dense surface region without affecting the total thickness. This adjustment influenced electron density distribution, impacting hole and electron flow. Overall, the addition of PEG not only improved the electrical properties of QD LEDs but also reshaped the internal morphology of the QD EML. Notably, the efficiency improvements observed rival those achieved by integrating traditional hole transport materials into QD EMLs.

Time-Resolved Mechanism of Positive Aging in InP Quantum-Dot Light-Emitting Diodes.

Positive aging has been reported to be effective for enhancing electroluminescence characteristics of quantum dot (QD) based optoelectrical devices. This study investigated the intricate mechanisms underlying the positive aging effect in quantum-dot light-emitting diodes (QLEDs) influenced by encapsulation with ultraviolet-curable resin. A 120-h analysis assessed the impact of the resin on the electron transport layer and emission layer, utilizing a strategically positioned perfluorinated ionomer (PFI) interlayer. The PFI layer effectively delayed the Al2O3 formation at the zinc magnesium oxide (ZMO)/Al interface and further reduced the interactions within the QD/ZMO interface, thereby curtailing exciton quenching at the interfaces. The time-sequential effect of positive aging demonstrated that resin encapsulation effectively passivates the ZMO surfaces after 12 h. The positive aging facilitated the reaction between aluminum and oxygen from ZMO, contributing to Al2O3 formation within 48 h of aging. Furthermore, positive aging passivated the defect states of the QD surface and the QD/ZMO interface, reducing exciton quenching at the QD or QD/ZMO interface. The enhanced electron injection and reduced exciton quenching resulted in aged InP QLEDs, exhibiting an external quantum efficiency of 12.04%. This is a significant increase from the 3.16% observed in the control device. Finally, a sequential mechanism of positive aging in InP QLEDs was devised, providing new insights into the time-related operation of aging agents. This study elucidates an advanced time-resolved mechanism of positive aging, thereby offering valuable insights into the intricate dynamics of excitons within the domain of QLED physics.

(Invited) Luminescent InP Quantum Dots: They're Not Just Like CdSe

Time-resolved photoluminescence (PL) and transient absorption (TA) spectroscopy have been used to elucidate the electron and hole dynamics in high quality InP/ZnSe/ZnS quantum dots (QDs) at room temperature. These dynamics depend critically on the overall In:P ratio. Stoichiometric QDs (those having an In:P ratio close to unity), have PL quantum yields of > 90% and exhibit dynamics that are very simple: both electron and hole relaxation to the bandedge is fast compared to the ~ 40 ps time-correlated photon-counting instrument response and the PL follows a single exponential decay having a time constant of about 26 ns. However, QDs having an In:P ratio greater than about 1.1 maintain PL quantum yields > 90%, but show much more complicated PL kinetics. In the non-stoichiometric QDs, a significant fraction of the PL exhibits a slower risetime. The PL rises over a range of timescales varying from close to the instrument response to approximately 2.0 ns. The time constant of the slowest component increases with increasing InP core size and the fraction of the PL that has the slow risetime increases with excess indium in the particle. The slow risetime is absent in the TA results, indicating that the slow dynamics may be assigned to relaxation in the valence band. The risetime increases with the thickness of the ZnSe shell, varying from < 40 ps for the thinnest (1.1 nm) to about 2.0 ns for the thickest (2.7 nm) ZnSe shells. In addition to the slow risetime, the QDs having excess indium show a significant long-lived (>100 ns) decay component. The magnitude and time constant of this slow decay also increases with ZnSe shell thickness.These results suggest that holes are transiently trapped at sites associated with indium dopants in the ZnSe shell. The trapped hole has negligible overlap with the conduction band electron, making this an optically dark state. The holes are in an equilibrium between the shell traps and the valence band, giving rise to the delayed emission. Several possible assignments of the trapping species can be considered, and a substitutional indium adjacent to a zinc vacancy, In3+/VZn 2-, is the most likely. This assignment is consistent with the observation that trapping occurs only when the QD has excess indium and is supported by experiments showing that the addition of zinc oleate or acetate decreases the extent of trapping, presumably by filling some of the vacancy traps. Further experiments show that addition of alkyl carboxylic acids causes increased trapping, presumably by the formation of zinc oleate, thereby creating additional zinc vacancies. Chloride ion is a common impurity in the synthesis of InP/ZnSe/ZnS QDs and the possibility of In3+/Cl- impurities acting as the hole trap can be also considered. However, additional experimental data on InP/ZnSe/ZnS QDs synthesized in the absence of chloride show the same PL risetimes and delayed emission, eliminating this possibility. Density functional theory calculations further corroborate assignment of the trapping species to In3+/VZn 2-. These calculations show that either a single In2+ ion or an In2+-In3+ dimer is much too easily oxidized to form the reversible traps observed experimentally, while In3+ is far too difficult to oxidize. However, a zinc vacancy adjacent to a substitutional indium is calculated to have its highest occupied orbitals about 1 eV above the top of the valence band of bulk ZnSe, in the appropriate energy range to act as reversible traps for quantum confined holes in the InP valence band.

(Invited) Electronic Trap Characterization in QD Devices Using Impedance Analysis Techniques

Colloidal quantum dots (QDs) are semiconductor nanocrystals with dimensions in the range of tens of nanometers. They exhibit unique optical and electronic properties, such as a size-dependent band gap and high absorption cross-section. These properties make them attractive for optoelectronic applications such as photovoltaics, light-emitting diodes (LEDs), and photodetectors. However, QD optoelectronics pose significant challenges due to trap states, which mainly originate from the surface states of nanocrystals. Therefore, it is necessary to analyze the trap states of QDs to understand their electronic properties and optimize their performance in optoelectronic applications. With this understanding, we want to correlate the cause of the trap states with the chemical defect to design better passivation strategies.In this discussion, we will explore the principles of electronic trap analysis in colloidal quantum dots based on impedance analysis techniques as a complementary method to spectroscopy. We will provide examples of electronic trap analysis in PbS QD photovoltaics and InP QD LEDs to demonstrate the effectiveness of this approach. We can electrically probe the QD layers in the device using an impedance analyzer to analyze the energy level and density of trap states. By combining chemical analysis and a theoretical approach with this technique, we attempted to correlate the trap states and chemical defects.

Correction to “Synthesis, Surface Chemistry, and Fluorescent Properties of InP Quantum Dots”

Correction to “Synthesis, Surface Chemistry, and Fluorescent Properties of InP Quantum Dots”

Molecularly Imprinted Viral Protein Integrated Zn-Cu-In-Se-P Quantum Dots Superlattice for Quantitative Ratiometric Electrochemical Detection of SARS-CoV-2 Spike Protein in Saliva.

Solution-processable colloidal quantum dots (QDs) are promising materials for the development of rapid and low-cost, next-generation quantum-sensing diagnostic systems. In this study, we report on the synthesis of multinary Zn-Cu-In-Se-P (ZCISeP) QDs and the application of the QDs-modified electrode (QDs/SPCE) as a solid superlattice transducer interface for the ratiometric electrochemical detection of the SARS-CoV-2-S1 protein in saliva. The ZCISeP QDs were synthesized through the formation of In(Zn)PSe QDs from InP QDs, followed by the incorporation of Cu cations into the crystal lattice via cation exchange processes. A viral-protein-imprinted polymer film was deposited onto the QDs/SPCE for the specific binding of SARS-CoV-2. Molecular imprinting of the virus protein was achieved using a surface imprinting electropolymerization strategy to create the MIP@QDs/SPCE nanosensor. Characterization through spectroscopic, microscopic, and electrochemical techniques confirmed the structural properties and electronic-band state of the ZCISeP QDs. Cyclic voltammetry studies of the QDs/SPCE superlattice confirmed efficient electron transport properties and revealed an intraband gap energy state with redox peaks attributed to the Cu1+/2+ defects. Binding of SARS-CoV-2-S1 to the MIP@QDs/SPCE cavities induced a gating effect that modulated the Fe(CN)6 3-/4- and Cu1+/2+ redox processes at the nanosensor interface, producing dual off/on ratiometric electrical current signals. Under optimal assay conditions, the nanosensor exhibited a wide linear detection range (0.001-100 pg/mL) and a low detection limit (0.34 pg/mL, 4.6 fM) for quantitative detection of SARS-CoV-2-S1 in saliva. The MIP@QDs/SPCE nanosensor demonstrated excellent selectivity against nonspecific protein targets, and the integration with a smartphone-based potentiostat confirmed the potential for point-of-care applications.

Optimization the potential of solution process fluorine passivated zinc oxide electron transport layer for stable InP-quantum dot light emitting diodes

The pervasive use of zinc oxide (ZnO) as an electron transport layer in quantum dot (QD) electroluminescent devices is constrained due to its chemical instability with the QD layer and the formation of interface quenching sites. The effect of fluorine passivation of sol-gel processed ZnO in QD light-emitting devices (QLEDs) is investigated in depth. An examination of the interaction between the ZnO surface and fluorine species revealed that the passivation of oxygen vacancies and the formation of stable hydrogen bonds with hydroxyl groups on ZnO surface have a significant influence on the stability and efficiency of the device. Such exceptional functions of fluorine have been found to effectively capture defects at the interface between ZnO and the emissive layer, therefore mitigating the interface quenching sites. The initial fluorination device demonstrated a significant improvement in external quantum efficiency (EQE) from 5.72 % to 20.07 %, and half of the device lifetime (LT50 at an initial luminance of 1500 cd m−2) was 286 h. Further passivating the remaining active oxygen on the ZnO surface can extend the stability of the device to 542 h with an EQE of 15.2 %, which is among the longest lifetime reported so far for green InP-QLEDs. Our report offers the possibility of utilizing straightforward and highly effective fluorination by spin-coating technique to attain long-lasting InP-QLED devices with remarkable performance.

Highly Luminescent Shell-Less Indium Phosphide Quantum Dots Enabled by Atomistically Tailored Surface States.

Contrary to the prevailing notion that shell structures arise from the intricate chemistry and surface defects of InP quantum dots (QDs), an innovative strategy that remarkably enhances the luminescence efficiency of core-only InP QDs to over 90% is introduced. This paradigm shift is achieved through the concurrent utilization of group 2 and 3 metal-derived ligands, providing an effective remedy for surface defects and facilitating charge recombination. Specifically, a combination of Zn carboxylate and Ga chloride is employed to address the undercoordination issues associated with In and P atoms, leading to the alleviation of in-gap trap states. The intricate interplay and proportional ratio between Ga- and Zn-containing ligands play pivotal roles in attaining record-high luminescence efficiency in core-only InP QDs, as successfully demonstrated across various sizes and color emissions. Moreover, the fabrication of electroluminescent devices relying solely on InP core emission opens a new direction in optoelectronics, demonstrating the potential of the approach not only in optoelectronic applications but also in catalysis or energy conversion by charge transfer.

Elemental doping tailoring photocatalytic hydrogen evolution of InP/ZnSeS/ZnS quantum dots

Photocatalytic water splitting for hydrogen production has garnered considerable attention as an effective method to alleviate energy shortages. In comparison to cadmium-based quantum dots (QDs) photocatalysts, InP QDs possess a smaller bandgap, larger exciton radius, broader absorption range, and are environmentally friendly. Although InP/ZnS core/shell QDs exhibit immense potential in photocatalysis, they suffer from rapid electron-hole recombination owing to interface defects and lattice mismatch. To address these issues, this study introduces an intermediate ZnSeS shell to reduce defects and tailor QD redox properties through transition metals (manganese and copper) doping. The characterization of QDs was performed from various perspectives, including morphology, element distribution, band structure, and charge transport efficiency. Notably, the photoelectrochemical properties of doped QDs were superior to those of the undoped QDs, while Mn-doped QDs showed inferior catalytic performance compared to the undoped ones. The mechanism of different photoelectrochemical and photocatalytic performances has been studied more intensely. The Mn-doped QDs undergo a process where Mn4+ is converted to Mn2+, consuming electrons in competition with the photocatalytic hydrogen evolution process. Conversely, InP/ZnSeS:Cu/ZnS QDs introduced an additional energy level into the original band structure, capturing some holes and slowing down the electron-hole recombination, thereby providing positive feedback for photocatalytic hydrogen production. Profiting from both the synergies of energy level structure and doping metal state, effective electron-hole separation, and rapid electron transfer to the surface of Cu-doped QDs accomplish the efficient hydrogen generation. The present study offers more possibilities for exploiting the required photocatalytic performance of QD catalysts via elemental doping.

Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs.

Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core-shell interfacial trap states, thereby boosting the photoluminescence (PL) efficiency of the QDs up to 98%. Also, the Auger recombination is suppressed, extending the biexciton lifetime from 60 to 100 ps. The electroluminescence device based on the InP-based QDs shows a high external quantum efficiency over 10%, further demonstrating high quality QDs synthesized by this process.

Encapsulation of InP/ZnS Quantum Dots into MOF-5 Matrices for Solid-State Luminescence: Ship in the Bottle and Bottle around the Ship Methodologies.

The utilization of InP-based quantum dots (QDs) as alternative luminescent nanoparticles to cadmium-based QDs is actively pursued. However, leveraging their luminescence for solid-state applications presents challenges due to the sensitivity of InP QDs to oxidation and aggregation-caused quenching. Hence, an appealing strategy is to protect and disperse InP QDs within hybrid materials. Metal-organic frameworks (MOFs) offer a promising solution as readily available crystalline porous materials. Among these, MOF-5 (composed of {Zn4O}6+ nodes and terephthalate struts) can be synthesized under mild conditions (at room temperature and basic pH), making it compatible with InP QDs. In the present work, luminescent InP/ZnS QDs are successfully incorporated within MOF-5 by two distinct methods. In the bottle around the ship (BAS) approach, the MOF was synthesized around the QDs. Alternatively, in the ship in the bottle (SIB) strategy, the QDs were embedded via capillarity into a specially engineered, more porous variant of MOF-5. Comparative analysis of the BAS and SIB approaches, evaluating factors such as operational simplicity, photoluminescence properties, and the resistance of the final materials to leaching were carried out. This comparative study provides insights into the efficacy of these strategies for the integration of InP/ZnS QDs within MOF-5 for potential solid-state applications in materials chemistry.

Improving spectral linewidth performance of InP quantum dots by promoting size-focused growth and decreasing exciton-phonon coupling.

InP-based quantum dots (QDs) are widely adopted as a superior alternative to CdSe-based QDs in various fields owing to their high quantum yield, environmental friendliness, and excellent stability. However, improving its color purity remains a challenging task. In this work, we employ a multistage heating strategy to optimize the nucleation and shell growth processes of amino-phosphine-based InP/ZnSe/ZnS QDs for reducing emission linewidths. The multistage heating strategy mitigates the undesired formation of small-size cores by decreasing monomer supersaturation during the nucleation process, thereby promoting size-focusing growth. During the shelling process, multistage heating effectively suppresses Zn2+ diffusion into the InP core while ensuring high-quality shell growth, thus reducing the homogeneous broadening caused by exciton-phonon coupling. Compared to classical synthesis, the multistage heating strategy can reduce the emission linewidth of nucleation and shelling by 13.2% and 30.9% respectively. The optimized InP/ZnSe/ZnS QDs exhibit a narrow full width at half maximum (FWHM) of 41.5 nm at 630 nm, representing significant progress in studying spectral linewidths of amino-phosphine InP QDs. This work provides potential insights for further improving the spectral linewidth performance of InP QDs or other nanocrystals with similar reaction-limited growth systems.

Application of Quantum Dots for Photocatalytic Hydrogen Evolution Reaction

There is increased interest in the conversion of solar energy into green chemical energy because of the depletion of fossil fuels and their unpleasant environmental effect. Photocatalytic hydrogen generation from water involves the direct conversion of solar energy into H2 fuels, which exhibits significant advantages and immense promise. Nevertheless, photocatalytic efficiency is considerably lower than the standard range of industrial applications. Low light absorption efficiency, the rapid recombination of photogenerated electrons and holes, slow surface redox reaction kinetics and low photostability are well known to be key factors negatively affecting photocatalytic hydrogen production. Therefore, to construct highly efficient and stable photocatalysts is important and necessary for the development of photocatalytic hydrogen generation technology. In this review, quantum dots (QDs)-based photocatalysts have emerged with representative achievements. Due to their excellent light-harvesting ability, low recombination efficiency of photogenerated electrons and holes, and abundant surface active sites, QDs have attracted remarkable interest as photocatalysts and/or cocatalyst for developing highly efficient photocatalysts. In this review, the application of QDs for photocatalytic H2 production is emphatically introduced. First, the special photophysical properties of QDs are briefly described. Then, recent progress into the research on QDs in photocatalytic H2 production is introduced, in three types: semiconductor QDs (e.g., CdS, CdMnS, and InP QDs), metal QDs (e.g., Au, Pt and Ag QDs), and MXene QDs and carbon QDs (CDQs). Finally, the challenges and prospects of photocatalytic H2 evolution with QDs in the future are discussed.

12‐1: Invited Paper: Narrowing the Emission Linewidth of I‐III‐VI Quantum Dots

In recent years, I‐III‐VI semiconductor quantum dots (QDs) have shown significant improvements that have unlocked new capabilities and end markets. Some typical examples of I‐III‐VI QDs are CuAlS2 (blue), AgInS2 (green), CuInSe2 (red) CuInSe2 (near‐IR), but other compositions and alloys are possible. These materials exhibit tunable photoluminescence (PL) emissions, and can achieve near unity PL quantum yield. They can have efficient broad emission, but also can have narrow emission, large Stokes shifts, and high optical extinction coefficients. These materials are often more stable, safer, and lower cost than alternatives such as CdSe, InP, and PbS or PbSe QDs. In this work, we discuss industrialization and scale‐up of I‐III‐VI QDs, starting with critical end uses related to spectrum optimization for greenhouses and solar energy. We also update on recent progress narrowing the emission linewidth (full‐width at half maximum) of I‐III‐VI QDs to the point that they are becoming competitive with legacy QDs used in displays and lighting.

Dewetting-assisted inkjet printing and optimized solvent mixture of Cd-free InP quantum dots for high-resolution pixel-pattern

Direct-printed quantum dot (QD) patterns utilizing inkjet method are a next-generation alternative to achieve high-resolution quantum dot light-emitting diodes (QLED). However, research on high-resolution pixel patterns is still limited due to issues such as thickness uniformity. In this study, we explored the feasibility of direct printing QLEDs to attain high-resolution pixel-patterned displays. Here, we successfully fabricated arrays of green QLED devices with a resolution of 200 pixels per inch, employing a precise 1 pL fine printer nozzle and optimizing ink formulation to achieve superior surface roughness and uniformity at the desired thickness. The inkjet-printed QD layers demonstrated a surface roughness of 1.9 nm and a flatness ratio of 0.2, comparable to those achieved through conventional spin-coating processes. This investigation offers the potential for extending the methodology to the fabrication of cost-effective, high-resolution full-color QLED displays.