A kinetic study of the deposition of Ni by metal—organic chemical vapor deposition (MOCVD) using Ni(CO) 4 was performed using a horizontal hot-wall low pressure reactor. The influence of experimental conditions on the growth rate is discussed and compared with literature data. Homogeneous gas phase reactions and an inhibiting effect of CO were confirmed. Kinetic constants were determined and used in a kinetic model to optimize the thickness uniformity along the CVD reactor. Experimental and calculated growth rates are in good agreement. The simulation model was used to obtain thickness variations on flat substrates of less than 5% between the inlet and outlet of reactors approximately 300 mm long. This simple approach allowed rapid and reliable optimization of the MOCVD process for the preparation of specimens several tens of square centimetres in area.