Infrared Nonlinear Optical Research Articles

A Congruent-Melt Infrared Nonlinear Optical Crystal Na4SrAs2S8.

A quaternary metal thioarsenate infrared (IR) nonlinear optical (NLO) compound Na4SrAs2S8 was successfully prepared by a high-temperature reaction method from stoichiometric agents. It crystallizes in the tetragonal P4n2 with the unit cell parameters a = 10.0393(3) Å, c = 6.9638(3) Å, and Z = 2, with the basic structural groups of isolated AsS4 tetrahedra. Compared with benchmark IR NLO crystal AgGaS2 (AGS), the title compound exhibits balanced optical properties of large band gap (3.05 eV vs. 2.60 eV) and considerable second harmonic generation response (0.95 × AGS). Moreover, the combined powder X-ray diffraction and differential scanning calorimetry analyses demonstrate that Na4SrAs2S8 is a congruent-melting compound with a low melting point of 668 °C, which is benefical for bulk single crystal growth. Experimental and theoretical calculation results indicate that Na4SrAs2S8 is a practically usable IR NLO crystal, also motivating the exploration of thioarsenates as high-performance IR NLO candidates.

AAg2MS4 (A = Na, K, Rb; M = P, As) Nonlinear Optical Series with Unique Cation‐Regulated Highly Anisotropic [AgS4] Hypertetrahedral Layered Framework

AbstractCommercial infrared (IR) nonlinear optical (NLO) materials are mainly from chalcopyrite‐type AMQ2 (A = Ag, Zn, M = Ga, Ge, Q = S, Se, P) crystals such as AgGaS2 (AGS), AgGaSe2 (AGSe), and ZnGeP2 (ZGP), in which the basic NLO‐active groups are MQ4 tetrahedral units. However, the small anisotropic character of them critical for small birefringence hinders the practical applications in the available IR wavelength range. In this study, a novel strategy for modulating birefringence is proposed using a cation regulation‐driven compressed hypertetrahedral layer approach and a family of AAg2MS4 (A = Na, K, Rb; M = P, As) IR NLO crystals are successfully obtained. Remarkably, the title compounds increase the birefringence to 0.12–0.15, about three times larger than that of AGS (0.04), while they can maintain large bandgaps and strong NLO effects. In addition, they exhibit congruent‐melting properties, beneficial for bulk single crystal growth. The work offers a firsthand access for designing and fabricating high‐performance IR NLO materials.

EuSi7P10: An Inorganic Supramolecular Nonlinear Optical Crystal Exhibiting Strong Second-Harmonic Generation Response.

Inorganic supramolecular compounds are the emergent class of infrared (IR) nonlinear optical (NLO) materials. However, the reported inorganic supramolecular IR NLO pnictides are still scarce. In this work, a new inorganic supramolecular IR NLO phosphide, EuSi7P10, has been synthesized using the metal salt flux method. The structure of EuSi7P10 features an anionic host framework containing the oriented [Si7P16] dual-T2 supertetrahedra with the guest Eu2+ cations filling in the intervals. Additionally, EuSi7P10 exhibits strong phase-matched (PM) second-harmonic generation (SHG) (4.0 × AgGaS2), large birefringence (0.087 @2050 nm), and wide infrared transparency. This study highlights the potential of inorganic supramolecular pnictides for exploring high-performance IR NLO crystals.

Sr2HgGe2OS6: A Hg-Based Oxychalcogenide Infrared Nonlinear Optical Material Exhibiting Favorable Balance between a Large Band Gap and Strong Second Harmonic Generation Response.

Currently, oxychalcogenides with mixed-anion groups that integrate the property advantages of oxides (wide optical band gap) and chalcogenides [strong second harmonic generation (SHG) response] through chemical substitution engineering have attracted widespread interest and are considered to be important candidates for infrared (IR) nonlinear optical (NLO) materials. Herein, the first Hg-based oxychalcogenide Sr2HgGe2OS6 with mixed anion [GeOS3] units has been successfully synthesized through a spontaneous crystallization method, which exhibits a favorable balance between the strong SHG response (0.7 × AgGaS2) and large optical band gap (2.9 eV). In addition, Sr2HgGe2OS6 shows high laser-induced damage threshold (LIDT, 2.1 × AgGaS2) as well as phase-matching (PM) performance. Theoretical calculations indicate that the Sr2HgGe2OS6 encompasses large birefringence of 0.128@2090 nm (3.3 × AgGaS2) and its SHG density mainly comes from [HgS4] tetrahedra and [GeOS3] units. This work not only demonstrates that Sr2HgGe2OS6 is a promising IR NLO material but also provides new ideas for the exploration of Hg-based oxychalcogenide IR NLO materials.

Infrared nonlinear optical materials with multiple strongly ionic cations

Infrared nonlinear optical (IR-NLO) crystals with excellent properties are in extensive demand due to their important role in IR laser technology. Currently, it remains a great challenge to obtain IR-NLO materials with both high second harmonic generation (SHG) response and large laser-induced damage thresholds (LIDTs). Some structural design strategies such as ‘structural/functional regions’ have been adopted to develop new high-performance NLO materials. The covalent structural region producing SHG signals has been extensively investigated, whereas the hard cations (alkali, alkaline-earth, and rare-earth metal ions) which are responsible for improving LIDTs, have been relatively neglected. Utilizing the concept of structural/functional regions, we focus on the relation between structural regions and SHG properties in chalcogenides. Combining different kinds of hard cations can change the dimension of structures and affect the stacking of NLO-active groups. Introducing more hard cations and constructing more complex ion regions help to increase the laser damage threshold. Based on the mentioned structural strategies, guidance will be provided for developing high-performance multiple-cation materials for IR NLO applications.

Cs3In(In4Se7)(P2Se6): A Multi-Chromophore Chalcogenide with Excellent Nonlinear Optical Property Designed by Group Grafting.

Non-centrosymmetric (NCS) and polar materials capable of exhibiting many important functional properties are indispensable for electro-optical technologies, yet their rational structural design remains a significant challenge. Here, we report a "group grafting" strategy for designing the first multi-chromophore selenophosphate, Cs3In(In4Se7)(P2Se6), that crystallizes in a NCS and polar space group of Cm. The structure features a unique basic building unit (BBU) [In(In4Se10)(P2Se6)], formed through "grafting [In4Se10] supertetrahedra on the root of [In(P2Se6)2] groups". Theoretical calculations confirm that this [In(In4Se10)(P2Se6)] BBU can achieve a "1+1>2" combination of properties from two chromophores, [In4Se10] supertetrahedron and ethane-like [P2Se6] dimer. That makes Cs3In(In4Se7)(P2Se6) exhibit excellent linear and nonlinear optical (NLO) properties, including a strong second harmonic generation (SHG) response (~6×AgGaS2), a large band gap (2.45 eV), broad infrared (IR) transmission (up to 19.5 μm), a significant birefringence (0.26 @1064 nm) as well as the congruently-melting property at ~700 °C. Therefore, Cs3In(In4Se7)(P2Se6) will be a promising NLO crystal, especially in the IR region, and this research also demonstrates that "group grafting" will be an effective strategy for constructing novel polar BBUs with multi-chromophore to design NCS structures and high-performance IR NLO materials.

Cs3In(In4Se7)(P2Se6): A Multi‐Chromophore Chalcogenide with Excellent Nonlinear Optical Property Designed by Group Grafting

AbstractNon‐centrosymmetric (NCS) and polar materials capable of exhibiting many important functional properties are indispensable for electro‐optical technologies, yet their rational structural design remains a significant challenge. Here, we report a “group grafting” strategy for designing the first multi‐chromophore selenophosphate, Cs3In(In4Se7)(P2Se6), that crystallizes in a NCS and polar space group of Cm. The structure features a unique basic building unit (BBU) [In(In4Se10)(P2Se6)], formed through “grafting [In4Se10] supertetrahedra on the root of [In(P2Se6)2] groups”. Theoretical calculations confirm that this [In(In4Se10)(P2Se6)] BBU can achieve a “1+1>2” combination of properties from two chromophores, [In4Se10] supertetrahedron and ethane‐like [P2Se6] dimer. That makes Cs3In(In4Se7)(P2Se6) exhibit excellent linear and nonlinear optical (NLO) properties, including a strong second harmonic generation (SHG) response (~6×AgGaS2), a large band gap (2.45 eV), broad infrared (IR) transmission (up to 19.5 μm), a significant birefringence (0.26 @1064 nm) as well as the congruently‐melting property at ~700 °C. Therefore, Cs3In(In4Se7)(P2Se6) will be a promising NLO crystal, especially in the IR region, and this research also demonstrates that “group grafting” will be an effective strategy for constructing novel polar BBUs with multi‐chromophore to design NCS structures and high‐performance IR NLO materials.

Molecular Crystals Constructed by Polar Molecular Cages: A Promising System for Exploring High-performance Infrared Nonlinear Optical Crystals.

Polar molecular crystals, with their densely stacked polar nonlinear optical (NLO) active units, are favored for their large second harmonic generation (SHG) responses and birefringence. However, their potential for practical applications as Infrared (IR) NLO materials has historically been underappreciated due to the weak inter-molecular interaction forces that may compromise their physicochemical properties. In this study, we propose molecular crystals with polar molecular cages as a treasure-house for the development of superior IR NLO materials and a representative system, binary chalcogenide molecular crystals, composed of [P4 Sn ] (n=3-9) polar molecular cages, is introduced. These crystals may not only achieve wide band gap, large SHG response, and birefringence in a single structure, but also exhibit favorable physicochemical properties. We subsequently obtained a polar molecular crystal, α-P4 S5 , which demonstrated exceptional IR optical properties, including a strong SHG response (1.1×AGS), wide band gap (3.02 eV), large birefringence (0.134@2050 nm), and a broad transmission range (0.41-14.7 μm). Moreover, it showed excellent water resistance and hardness. These findings highlight the potential of polar molecular crystals as a promising platform for the development of high-performance IR NLO materials.

Molecular Crystals Constructed by Polar Molecular Cages: A Promising System for Exploring High‐performance Infrared Nonlinear Optical Crystals

AbstractPolar molecular crystals, with their densely stacked polar nonlinear optical (NLO) active units, are favored for their large second harmonic generation (SHG) responses and birefringence. However, their potential for practical applications as Infrared (IR) NLO materials has historically been underappreciated due to the weak inter‐molecular interaction forces that may compromise their physicochemical properties. In this study, we propose molecular crystals with polar molecular cages as a treasure‐house for the development of superior IR NLO materials and a representative system, binary chalcogenide molecular crystals, composed of [P4Sn] (n=3–9) polar molecular cages, is introduced. These crystals may not only achieve wide band gap, large SHG response, and birefringence in a single structure, but also exhibit favorable physicochemical properties. We subsequently obtained a polar molecular crystal, α‐P4S5, which demonstrated exceptional IR optical properties, including a strong SHG response (1.1×AGS), wide band gap (3.02 eV), large birefringence (0.134@2050 nm), and a broad transmission range (0.41–14.7 μm). Moreover, it showed excellent water resistance and hardness. These findings highlight the potential of polar molecular crystals as a promising platform for the development of high‐performance IR NLO materials.

Rational Design of Novel Promising Infrared Nonlinear Optical Materials: Structural Chemistry and Balanced Performances.

ConspectusSecond-order nonlinear optical (NLO) materials are currently a hot topic in modern solid-state chemistry and optics because they can produce coherent light by frequency conversion. Noncentrosymmetric (NCS) structure is not only the prerequisite for NLO materials but also a challengeable issue because materials tend to be centrosymmetric (CS) in terms of thermodynamical stability. Among NLO materials, an excellent infrared (IR) candidate should simultaneously meet several strict key conditions including a large NLO coefficient, high laser-induced damage threshold (LIDT), phase-matchable (PM) behavior, and so on. Achieving a balance between the large NLO effect and high LIDT is difficult, as they have contradictory requirements for chemical bonds. Considering the urgent need of the high-power IR laser market and the drawbacks of the available ones, exploring new high-performance IR NLO crystals is necessary while challenging. In this Account, we first briefly introduce the status and advancement of IR NLO crystals and emphasize the criteria of an excellent candidate. Then, we will introduce five simple methods developed by us to discover practical NLO candidates through understanding of the chemical composition-structure-NLO performance relationship. (1) A rarely investigated system with simple chemical compositions as new-type NLO crystals, namely, adducts containing S8 molecules, are developed. Combining a chairlike S8 unit with other units through van der Waals forces has successfully obtained several high-performance NLO adducts. (2) The main trend in exploring new NLO crystals is that the chemical composition is more and more diversified and the structure is more and more complex, and expensive and chemically active alkaline and alkaline earth metals are usually introduced as counter cations. In contrast, the research on systems with simple chemical compositions, simple structures, and low costs has been continuously ignored. The binary M2Q3 (M = Ga, In; Q = S, Se) family with rich acentric modifications has been systematically investigated, and they all exhibit strong SHG effects and high LIDTs. (3) We first proposed the concept of inducing CS structures transformed to NCS ones by partial cation substitution to design novel NLO crystals. Considering the huge number of CS structures in the database compared to the number of NCS structures, it is an attractive method to apply CS structures as the parents to obtain potential NLO materials via partial-substitution-induced symmetry breaking. A series of chalcogenides with high NLO performances have been successfully obtained by us in this way. (4) We investigated the first NLO-active rare earth (RE) chalcophosphates and developed this family systematically, and they demonstrate wonderful comprehensive NLO properties. (5) We created a novel mixed-anion system for NLO applications, namely, chalcogenide borates. Usually, mixed-anion compounds can engender a synergistic effect to obtain desired IR NLO properties. Our recent progress on this system suggests that chalcogenide borates are potential candidates for IR NLO applications, although the study is still in its infancy. Finally, we state the current problems of IR NLO materials and give some perspectives for their future development.

Wide band gap selenide infrared nonlinear optical materials AIIMg6Ga6Se16 with strong SHG responses and high laser-induced damage thresholds.

Infrared (IR) nonlinear optical (NLO) materials with strong NLO response, wide band gap and high laser-induced damage threshold (LIDT) are highly expected in current laser technologies. Herein, by introducing double alkaline-earth metal (AEM) atoms, three wide band gap selenide IR NLO materials AIIMg6Ga6Se16 (AII = Ca, Sr, Ba) with excellent linear and NLO optical properties have been rationally designed and fabricated. AIIMg6Ga6Se16 (AII = Ca, Sr, Ba) are composed of unique [AIISe6] triangular prisms, [MgSe6] octahedra and [GaSe4] tetrahedra. The introduction of double AEMs effectively broadens the band gaps of selenide-based IR NLO materials. Among them, CaMg6Ga6Se16, achieving the best balance between the second-harmonic generation response (∼1.5 × AgGaS2), wide band gap (2.71 eV), high LIDT (∼9 × AgGaS2), and moderate birefringence of 0.052 @ 1064 nm, is a promising NLO candidate for high power IR laser. Theoretical calculations indicate that the NLO responses and band gaps among the three compounds are mainly determined by the NLO-active [GaSe4] units. The results enrich the chemical diversity of chalcogenides, and give some insight into the design of new functional materials based on the rare [AIISe6] prismatic units.

Nonlinear Optical Phosphide CuInSi2P4: The Inaugural Member of Diamond-Like Family I-III-IV2-V4 Inspired by ZnGeP2.

Noncentrosymmetric phosphides have garnered significant attention as promising systems of infrared (IR) nonlinear optical (NLO) materials. Herein, a new quaternary diamond-like phosphide family I-III-IV2-V4 and its inaugural member, namely, CuInSi2P4 (CISP), were successfully fabricated by isovalent and aliovalent substitution based on ZnGeP2. First-principles calculations revealed that CISP has a large NLO coefficient (d14 = 110.8 pm/V), which can be attributed to the well-aligned tetrahedral [CuP4], [InP4], and [SiP4] units. Remarkably, the extremely small thermal expansion anisotropy (0.09) of CISP enables it to exhibit a considerable laser-induced damage threshold (LIDT, 5.0 × AgGaS2@1.06 μm) despite the relatively narrow band gap (0.81 eV). This work improves the chemical diversity of inorganic phosphide and promotes the development of phosphide systems, which may provide valuable perspectives for future exploration of IR NLO materials.

ACu4AsS4 (A = K, Rb): Two infrared nonlinear optical crystals with strong second-harmonic generation responses originating from multiple chromophores

Infrared (IR) nonlinear optical (NLO) crystals are of great significance in modern laser technology, and metal chalcogenides are receiving increasing interest as promising IR NLO candidates. To explore new IR NLO materials with enhanced properties, two quaternary chalcogenides with multiple chromophores, KCu4AsS4 and RbCu4AsS4, were synthesized using the solvothermal method. KCu4AsS4 and RbCu4AsS4 feature 2D [Cu6As2S6]∞ anionic layers with multiple chromophores, and exhibit strong phase-matched second-harmonic generation (SHG) responses (1.8–2.0 × AgGaS2), wide band gaps, suitable birefringence (0.083 and 0.074 @ 2050 nm) and wide infrared transparency. The theoretical calculation results suggest that the strong SHG responses are ascribed to the 2D [Cu6As2S6]∞ anionic layers.

Regulating the key performance parameters for Hg-based IR NLO chalcogenides via bandgap engineering strategy

Recently, non-centrosymmetric (NCS) Hg-based chalcogenides have garnered significant interest due to their strong second-harmonic-generation intensities (deff), making them attractive candidates for infrared nonlinear optical (IR-NLO) application. However, achieving both wide band gaps (Eg) and large phase-matched deff simultaneously in these materials remains a challenge due to their inherent constraints on each other. In this research, we have successfully obtained two quaternary NCS Hg-based chalcogenides, Rb2HgGe3S8 and Cs2HgGe3S8, by implementing a bandgap engineering strategy that involves alkali metal introduction and Hg/Ge ratio regulation. Both compounds consist of 2D [HgGe3S8]2– anionic layers made of 1D [HgGeS6]6– chains and dimeric [Ge2S6]4– polyhedra arranged alternately, and the charge-balanced Rb+/Cs+ cations located between these layers. Remarkably, Rb2HgGe3S8 and Cs2HgGe3S8 exhibit overall properties required for promising IR-NLO materials, including sufficient PM deff (0.55–0.70 × AgGaS2@2050 nm), large Eg (3.27–3.41 eV), giant laser-induced damage thresholds (17.4–19.7 × AgGaS2@1064 nm), broad optical transmission intervals (0.32–17.5 µm), and suitable theoretical birefringence (0.069–0.086@2050 nm). Furthermore, in-depth theoretical analysis reveals that the exceptional IR-NLO performance is attributed to the synergy effects of distorted [HgS4] and [GeS4] tetrahedra. Our study provides a useful strategy for enhancing the Eg and advancing Hg-based IR-NLO materials, which is expected to extended and implemented in other chalcogenide systems.

AIB3 IIC2 IIIQ6 VIXVII: A Thioborate Halide Family for Developing Wide Bandgap Infrared Nonlinear Materials by Coupling Planar [BS3] and Polycations.

Developing high-performance infrared (IR) nonlinear optical (NLO) materials is urgent but challenging due to the competition between NLO coefficient and bandgap in one compound. Herein, by coupling NLO-active [BS3] planar units and halide-centered polycations, six new metal thioborate halides ABa3B2S6X (A = Rb, Cs; X = Cl, Br, I) composed of zero-dimensional [XBamRbn/Csn] polycations and [BS3] units, belonging to a new family, are rationally designed and fabricated. The compounds show an interesting structural transition from Pbcn (ABa3B2S6Cl) to Cmc21 (ABa3B2S6Br and ABa3B2S6I) driven by the clamping effect of polycationic frameworks. ABa3B2S6Br and ABa3B2S6I are the first series metal thioborate halide IR NLO materials, and the introduction of [BS3] unit effectively widens the bandgap of planar unit-constructed chalcogenides. ABa3B2S6Br and ABa3B2S6I, exhibiting wide bandgaps (3.55-3.60 eV), high laser-induced damage thresholds (≈ 6 × AgGaS2), and strong SHG effects (0.5-0.6 × AgGaS2) with phase-matching behaviors, are the promising IR NLO candidates for high-power laser applications. The results enrich the chemical and structural diversity of boron chemistry and give some insights into the design of new IR NLO materials with planar units.

Enhancing second harmonic generation response in infrared nonlinear optical material through Pb substitution: A study of Li2PbSiS4compound

The demand for infrared nonlinear optical (IR-NLO) materials is increasing due to their applications in many civil and military fields. However, a critical challenge revolves around achieving a good balance between a large second harmonic generation (SHG) response and a high laser damage threshold (LDT). Based on earlier study on Li2SrSiS4 compound which showed good SHG and high LDT performances, and to afford one new NLO material, we propose, in this work to replace the Sr atom with a P-bloc (Pb) atom in the Li2SrSiS4 compound. According to DFT calculations, the newly designed Li2PbSiS4 compound crystallizes in the stable stannite structure. In addition, it is thermodynamically, dynamically and mechanically stable. The investigated material presents an indirect bandgap of 2.48 eV employing the HSE06 approach, including spin-orbit coupling (SOC) effects. Moreover, the calculated SHG response is 0.85 × AgGaS2, which is larger than the SHG response of Li2SrSiS4. Furthermore, the SHG response increases directly with temperature, allowing using the compound at high temperatures. The obtained results may make the Li2PbSiS4 compound a promising NLO material.

Breaking Through the Trade-Off Between Wide Band Gap and Large SHG Coefficient in Mercury-Based Chalcogenides for IR Nonlinear Optical Application.

It is substantially challenging for non-centrosymmetric (NCS) Hg-based chalcogenides for infrared nonlinear optical (IR-NLO) applications to realize wide band gap (Eg > 3.0eV) and sufficient phase-matching (PM) second-harmonic-generation intensity (deff > 1.0 × benchmark AgGaS2 ) simultaneously due to the inherent incompatibility. To address this issue, this work presents a diagonal synergetic substitution strategy for creating two new NCS quaternary Hg-based chalcogenides, AEHgGeS4 (AE = Sr and Ba), based on the centrosymmetric (CS) AEIn2 S4 . The derived AEHgGeS4 displays excellent NLO properties such as a wide Eg (≈3.04-3.07eV), large PM deff (≈2.2-3.0 × AgGaS2 ), ultra-high laser-induced damage threshold (≈14.8-15 × AgGaS2 ), and suitable Δn (≈0.19-0.24@2050nm), making them highly promising candidates for IR-NLO applications. Importantly, such excellent second-order NLO properties are primarily attributed to the synergistic combination of tetrahedral [HgS4 ] and [GeS4 ] functional primitives, as supported by detailed theoretical calculations. This study reports the first two NCS Hg-based materials with well-balanced comprehensive properties (i.e., Eg > 3.0eV and deff > 1.0 × benchmark AgGaS2 ) and puts forward a new design avenue for the construction of more efficient IR-NLO candidates.

Theoretical investigations on ternary defective diamond-like infrared nonlinear optical materials in Be-Ga-Se system

Beryllium (Be) has made great success in developing Be-based oxide deep-ultraviolet (DUV) nonlinear optical (NLO) materials, but the development of Be-based chalcogenide infrared (IR) NLO materials is still tardy because of the lack of rational material design strategy and in-depth understanding on the composition-structure-propertiy relationships in the compounds. In this work, by coupling [BeSe4] with NLO-active [GaSe4] tetrahedral groups, one thermodynamically stable and three metastable defective diamond-like (DL) BeGa2Se4 (BeGSe) compounds, BeGSe-I (I4¯ 2 m), BeGSe-II (I4¯), BeGSe-III (Pc) and BeGSe-IV (P4¯ 2 m), have been predicted by Universal Structure Predictor: Evolutionary Xtallography (USPEX) code and phonon dispersion spectra. Notably, BeGSe-II and BeGSe-III show high thermal conductivities (6.520 W/m/K for BeGSe-II, 3.835 W/m/K for BeGSe-III), and achieve a good balance between wide band gap (Eg ≥ 3.0 eV) and large NLO effect (≥ 1.0 × AGS) for an excellent IR NLO material. Meanwhile, the charge transfer enhanced band gap mechanism, and covalent radius, bulk modulus effected lattice thermal conductivity in the defective DL-AGa2Se4 (A = Be, Mg, Zn, Cd, Hg) were also uncovered. The results give insights into the design of new defective DL compounds with wide band gap and high thermal conductivity based on [BeSe4] tetrahedron.

Double alkaline earth metals sulfide SrMgGeS4 with high laser-induced damage threshold and strong second-harmonic generation

The exploration of anti-laser damage wide band gap infrared (IR) nonlinear optical (NLO) materials is urgently needed but challenging due to the contradiction between wide band gap and large NLO coefficient. Herein, by introducing [MQ4] (Q = S, Se) tetrahedral units into the AIIBIICIVD4VI family, three double alkaline earth metals chalcogenides SrMgGeS4, BaMgSiSe4 and SrMgSiSe4 with unprecedented [MgGeS6] or [MgSiSe6] dimers are rationally designed and fabricated. The compounds display an interesting structural change from centrosymmetric (CS) I41/acd (BaMgSiSe4, the first CS compound in this family) to non-centrosymmetric Ama2 (SrMgSiSe4) and Fdd2 (SrMgGeS4). Importantly, SrMgGeS4 shows a wide band gap (3.58 eV), a high laser-induced damage threshold (∼6 × AGS), a moderate birefringence (∼0.11@1064 nm), and a strong second-harmonic generation (SHG) response (∼1.1 × AGS), achieving a good balance between wide band gap (Eg ≥ 3.5 eV) and large SHG response (≥1.0 × AGS) for an excellent IR NLO material. The results enrich the chemical and structural diversity of chalcogenides and give insights into the design of high-performance IR NLO materials.

Mixed Anionic Tetrahedra Guided Design of New Infrared Nonlinear Optical Material Cs3Ga8S13Cl with High Laser‐Induced Damage Threshold

AbstractThe development of anti‐laser damage infrared (IR) nonlinear optical (NLO) materials is an urgent need but challenging due to the contradiction between wide bandgap and large NLO coefficient. Herein, by introducing a halogen into the NLO‐active tetrahedral unit, two halogenated metal chalcogenides Cs3Ga8S13Cl and Cs9Ga8Se12Cl9 with unprecedented [GaQ3Cl] (Q = S/Se) tetrahedral units are rationally designed and fabricated in experiments by the flux method, enriching the chemical and structural diversity of chalcogenides. Cs3Ga8S13Cl shows a wide bandgap of ≈3.76 eV, resulting in a high laser‐induced damage threshold of ≈8 × AgGaS2 (AGS) and a moderate NLO response (≈0.6 × AGS) with phase‐matching behavior. The results imply that Cs3Ga8S13Cl is a promising IR NLO material for the high powder laser application and demonstrate the feasibility of the halogenated tetrahedron strategy in regulating the optical properties of chalcogenides.