Influence Of Post-annealing Temperature Research Articles

Influence of annealing temperature on the properties of transparent conductive and near-infrared reflective ZnO:Ga films

Highly transparent conductive and near-infrared (IR) reflective Ga-doped ZnO films were deposited on glass substrate by DC reactive magnetron sputtering. The influence of post-annealing temperature on the structural, electrical and optical properties of the films was investigated. The lowest resistivity of 2.6 × 10−4 Ω cm was obtained at an annealing temperature of 450 °C. The films have low transmittance and high reflectance in the near-IR range. The average transmittance of the films is over 90% in the visible range.

Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films

In this work we present a study on the effect of annealing temperatures on the structural, morphological, electrical and optical characteristics of gallium doped zinc oxide (GZO), indium zinc oxide (IZO) and indium-tin-oxide (ITO) films. GZO and IZO films were deposited at room temperature by r.f. magnetron sputtering, whereas the ITO films were commercial ones purchased from Balzers. All films were annealed at temperatures of 250 and 500 °C in open air for 1 h. The GZO and ITO films were polycrystalline. The amorphous structure of as-deposited IZO films becomes crystalline on high temperature annealing (500 °C). The sheet resistivity increased with increase in annealing temperature. GZO films showed an increase of 6 orders of magnitude. The optical transmittance and band gap of as-deposited films varied with annealing. The highest transmittance (over 95 %) and maximum band gap (3.93 eV) have been obtained for ITO films.

Influence of post-annealing temperature on properties of ZnO:Li thin films

Li-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering. The influence of post-annealing temperature on the electrical, structural, and optical properties of the films was investigated. A conversion from p-type conduction to n-type in a range of temperature was confirmed by Hall measurement. The optimal p-type conduction is achieved at the annealing temperature of 500 °C with a resistivity of 57 Ω cm, carrier concentration of 1.07 × 10 17 cm −3 and Hall mobility of 1.03 cm 2 V −1 s −1. From the temperature-dependent PL analysis, the energy level of Li Zn acceptor was determined to be ∼140 meV above the valence band.