The present work is dedicated to the simulation of the electronic structure of 26 different impurity d-elements (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Lu, Hf, Ta, W, Re, Os, Ir, Pt, and Au) and transport properties of zirconia using the tight-binding theory. The problem has been considered in the framework of the cell method and the band calculations. During simulation, the impurity is placed in the substitutional site of zirconium. The calculations have shown that the oxygen vacancy in zirconia is a split vacancy. We have established that the migration barrier for oxygen in zirconia sharply decreases with Cu, Ag, Ni, Pd, Pt and Au- doping.