Influence Of Semiconductor Research Articles

Density functional studies on wurtzite piezotronic transistors: influence of different semiconductors and metals on piezoelectric charge distribution and Schottky barrier

The mechanical–electrical coupling properties of piezoelectric semiconductors endow these materials with novel device applications in microelectromechanical systems, sensors, human–computer interfaces, etc. When an applied strain is exerted on a piezoelectric semiconductor, piezoelectric charges are generated at the surface or interface of the semiconductor, which can be utilized to control the electronic transport characteristics. This is the fundamental working mechanism of piezotronic devices, called the piezotronic effect. In the present report, a series of piezotronic transistors composed of different electrode metals and semiconductors is examined using density functional theory calculation. It is found that the influence of semiconductors on the piezotronic effect is larger than the impact of metals, and GaN and CdS are promising candidates for piezotronic and piezo-phototronic devices, respectively. The width of the piezoelectric charge distribution obtained in the present study can be used as a parameter in classical finite-element-method based simulations, which provide guidance on designing high-performance piezotronic devices.

The influence of semiconductors on the evolution of typical laboratory instruments

The influence of the transistor on digital instruments is considered first and the example of its application to digital voltmeters shows how the product became practical in the late 1950s and then went through successive improvements in performance as the devices available improved. Later developments made the instrument more automatic and improved the cost and reliability. The influence of the transistor on analogue instruments did not start till much later but eventually the transistor displaced the valve and provided a much improved performance, illustrations from oscilloscope design show the influence of tunnel diodes on trigger circuits and how the alternate series/shunt feedback configuration is used in amplifiers to give very wide bandwidths. It is generally true that the introduction of semiconductors has resulted in cheaper instruments with better performance doing more complex tasks.

The influence of semiconductors on the teaching of electronics[ellipsis (horizontal)] a review

Quotations from textbooks in electronics are used to illustrate the impact on education of achievements in semiconductor physics. This work led to the development of transistors and integrated circuits and to the changing fortunes of the microelectronics industry. It has also been responsible for continuous modification of the subject matter of electronics courses. An attempt is made not only to review these changes but to suggest what implications this process may have for the future.

The influence of semiconductor devices on the evolution of computer systems

The shortcomings of mechanical and vacuum tube computers are pointed out. the semiconductor device has provided greatly increased intrinsic reliability but has made apparent the problem of manageability. the semiconductor approach allows the classical methods of tackling complexity by partitioning and decentralization to be followed. storage management and store searching aids can easily be realized by additional circuits.

Power supply aspects of semiconductor equipment

This article presents data concerning the often ``unmentioned'' influences of semiconductors upon power sources, other equipment, and the user. The influence of methods of power control and the resulting harmonics is considered in detail, including some new data on the effect of unbalanced firing angles. Also presented is information relative to metering accuracy, radio, telephone, and control-circuit interference, lamp flicker, and semiconductor influence, including the characteristics of a new RFI-free switching device. In addition, aspects of regulatory agencies are considered, and detailed references for further in-depth study are given.

Effect of thermal instability on ultra-high frequency performance of insulated-gate field-effect transistors

A theory is derived which relates the device characteristics, in particular the ultra-high frequency performance of field-effect transistors (FETs) to thermal properties. The method of successive approximation is used to simultaneously calculate device temperature and power developed in the channel. FET's are thermally stable only when the device temperature under operating conditions does not contribute significantly to the carrier concentration which is difficult to achieve in modern devices where either high mobility materials and/or small channel lengths are used. The influence of semiconductor-, insulator-, and substrate-material, geometry and thermal properties upon thermal stability and ultra-high frequency performance are discussed. The theory is applied to InAs on glass-, Silicon on Sapphire-, and GaAs on Sapphire-FET's and the high frequency performance of these devices under thermal constraints is determined.