Influence Of Post-annealing Temperature Research Articles

The influence of post-annealing temperature on indium-silicon oxide thin film transistors

The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties.

UV sensitivity enhancement in ZnO:Cu films through simple post-annealing treatment

Influence of post-annealing temperature on structural, morphological, optical, and electrical properties of ZnO:Cu films was investigated. The films were deposited using the ultrafast spray pyrolysis technique for 10 s. Post-annealing treatment was then conducted at a temperature range of 400–600 °C under ambient pressures. Structural, morphological, electrical, and optical properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), current–voltage (I–V) curve, and UV–Vis spectroscopy, respectively. By increasing the annealing temperature, SEM images show morphology modification from rods to spherical grain due to atomic rearrangement. XRD patterns show significant improvement in crystallinity. From I–V curves, the sensitivity of UV detection is also increased. The increase of annealing temperature provokes both the dark current and photocurrent enhancement. UV–Vis spectroscopy analysis shows the decrease of bandgap by increasing the annealing temperature. Our study is essential to improve the functionality of ZnO:Cu film and realizes mass-scale fabrication with low cost.

Enhanced switching ratio of sol–gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures

Sol–gel-processed Y2O3 films were used as an active-channel layer for resistive switching memory (RRAM) devices. The influence of post-annealing temperature on structural, chemical, and electrical properties was studied. Y2O3-RRAM devices comprising electrochemically active metal electrodes, Ag, and indium tin oxide (ITO) electrodes exhibited the conventional bipolar RRAM device operation. The fabricated Ag/Y2O3/ITO RRAM devices, which included 500 °C-annealed Y2O3 films, exhibited less oxygen vacancy and defect sites, reduced the leakage current, increased the high-/low-resistance state ratio of more than 105, and provided excellent nonvolatile memory properties without significant deterioration for 100 cycles and 104 s.

Influence of post annealing temperature on the thermoelectric properties of bulk ZnSnO

In this manuscript, we have studied the structural, electrical and thermoelectric properties of bulk ZnSnO by post growth annealing method. X-Ray Diffraction data showed that the crystallinity was found to be improved y annealing up to 700oC due to compensation of oxygen vacancy type donor defects. But further annealing forced the oxygen atoms to diffuse into the interstitial sites, therefore causes degradation in the crystal quality. Thermoelectric properties were increased with annealing temperature up to 700oC and then decreased due to further annealing. The sharp enhancement of thermoelectric properties is due to mobility increase of carriers.

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers.

In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.

Anomalous X-ray scattering study on oxidized TbxDy1-xFe2-y thin films: Influence of thermal annealing on the oxide composition

Thin films of the ternary compound TbxDy1-xFe2-y were prepared by DC magnetron sputtering from a TbDyFe alloy target with the composition same as Terfenol-D alloy (Tb0.32Dy0.68Fe1.92) onto 400 °C Si (001) substrates. The influence of post annealing temperature at 550 °C, 700 °C or 850 °C for 6 h are studied systematically on a series of TbxDy1-xFe2-y samples. However, the annealing process leads to the incorporation of oxygen impurity into the thin film. To understand the effects of annealing temperature on the microstructural and crystalline degree of oxidation of RFe2 thin film, different characterisation techniques such as anomalous X-ray scattering and electron probe micro-analyzer were performed. These measurements show that Fe clusters phase gets segregated from the bulk matrix during annealing at 550 °C and 850 °C but do not segregate while annealing at 700 °C. In this work, we present an anomalous X-ray diffraction measurement on TbxDy1-xFe2-y to determine the composition ratio of rare earth oxides in thin film and compositional analysis.

The influence of initial gold nanoparticles layer on migration of silver nanoparticles in silver/glass matrix

A thin layer of gold nanoparticles (AuNPs) was deposited on glass substrates followed by subsequent deposition of silver nanoparticles (AgNPs) on it. Both AuNPs and AgNPs layers were fabricated by DC magnetron sputtering with inert gas condensation technique. The effect of initial thin layer of AuNPs have on the transformation of AgNPs surface structure by post annealing at 500 °C and 600 °C in air was investigated. The influence of post annealing temperature on the surface morphology was studied by atomic force microscopy and post annealing at 500 °C reduce the size of AgNPs along with the formation of some AgNPs inside the glass matrix. At 600 °C, aggregation of AuNPs on the surface was observed and increased in the number of AgNPs that diffused into the glass matrix. X-ray photoelectron spectroscopy was employed to study the surface composition and chemical states. The temperature dependence of Ag diffusion into the glass matrix was characterised and observed by UV–visible absorption spectroscopy and cross sectional transmission electron microscopy. Furthermore, ultraviolet photoelectron spectroscopy revealed a new shoulder related to Au 6 s hybridized with Au 5d and Ag 4d bands in the 1–4 eV regions, which affirmed the metallic character of AgNPs/AuNPs/glass system at higher annealing temperature. By introducing AuNPs on glass prior to AgNPs deposition, novel properties such as limited Ag ion diffusion and evaporation were found and problems previously encountered in AgNPs/glass system were avoided. The proposed AgNPs/AuNPs/glass system can be useful in plasmonic applications such as chroma filters and photonic devices.

Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrO<italic>x</italic>

We report a comparative investigation of the negative capacitance (NC) Ge pFETs with different thicknesses of HfZrO x (HZO). Although the NC transistors with 6.6 nm HZO exhibit the sub-60 mV/decade subthreshold swing, the hysteresis inevitably occurs. The hysteresis-free characteristics are demonstrated in the NC Ge pFETs with 4.5 and 3.7 nm HZO. The influence of postannealing temperature on device performance is dependent on the thickness of HZO. With the postannealing at 450 °C, NC transistors with 4.5 and 3.7 nm HZO achieve 23% and 11% ${I}_{\textsf {DS}}$ improvement, respectively, over the control devices, at a ${V}_{\textsf {GS}}$ – ${V}_{\textsf {TH}}$ of −1.0 V and a ${V}_{\textsf {DS}}$ of –0.05 V. However, a higher postannealing temperature of 550 °C leads to the significant degradation in NC device with 4.5 nm HZO compared with the control device. It is further observed that, with the fixed HZO thickness and postannealing temperature, ${I}_{\textsf {DS}}$ of the NC Ge pFETs is improved as the ${C}_{G}$ peak gets increased.

Influence of post-annealing temperature on the morphological, structural and optical properties of spin coated zinc oxide thin films

In this study, zinc oxide films were fabricated on quartz glass substrate using spin coating technique with 2 molar of zinc oxide in organic solvent as starting materials. The fabricated sample was post-annealed at different temperature from 350 °C to 750 °C for 60 minutes. The energy dispersive x-ray spectroscopy (EDS) confirmed that zinc oxide coating film was fabricated on the quartz glass substrate. The crystallography of zinc oxide films were analyzed by X-ray diffraction (XRD). The crystallite size of zinc oxide nanoparticles was determined from the full-width at half maximum (FWHM) of XRD peaks using Debye-Scherrer’s equation and showed that the zinc oxide films had highly crystalline quality in hexagonal wurtzite crystal structure. The morphological property of films was observed by scanning electron microscopy (SEM). Surface morphology of films shows regularly spread all of zinc oxide films. The optical property of various zinc oxide films was measured using UV-Visible spectrophotometer.

Influences of post-annealing temperature on the structural and electrical properties of mixed oxides (CuFeO2 and CuFe2O4) thin films prepared by spray pyrolysis technique

P-type mixed oxides (CuFeO2 and CuFe2O4) transparent conducting thin films have been successfully deposited on p-type Si (111) substrates at 450°C by spray pyrolysis deposition (SPD) and annealed at 800°C for 2h. The crystal structure, surface morphology and electrical property have been investigated. It is observed that the CuFeO2 and CuFe2O4 thin films as deposited and annealed, have polycrystalline hexagonal structure and the crystallite size increases by annealing processes. The electrical property of the Ni/CuFeO2/Si Metal–Semiconductor–Metal (MSM) photo detectors was investigated using the current–voltage (I–V) measurements. The barrier heights ϕΒ of Ni/CuFeO2/Ni MSM thin films of as deposited and annealed on Si substrates were calculated and its values are 0.478, 0.345eV, respectively with an applied bias voltage of 3V.

Spark plasma sintering of Li/Ta-modified (K,Na)NbO3 lead-free piezoelectric ceramics: Post-annealing temperature effect on phase structure, electrical properties and grain growth behavior

Abstract Highly dense Li/Ta co-doped (K,Na)NbO 3 lead-free ceramics were prepared by spark plasma sintering (SPS) in a relatively wide temperature window. The influences of post-annealing temperature on phase structure, electrical properties and grain growth were investigated. Through tailoring post-annealing temperature, relative dielectric constant ɛ r , and piezoelectric coefficient d 33 of SPSed KNN-based samples can be enhanced to 960 and 225 pC/N for the same composition compared with normally sintered values (771 and 206 pC/N). The enhanced electrical properties were discussed from the point view of microstructure (grain size and its distribution, porosity) and phase transition, which occurred when post-annealing temperature exceeded 1050 °C. Also, with increasing post-annealing temperature, three grain growth behavior stages were investigated on the balance between the volatilization of alkali metal oxides and secondary grain growth.

Annealing effect on conductivity behavior of Li–doped ZnO thin film and its application as ZnO-based homojunction device

Transparent electronics is an advanced technology concerning the realization of invisible electronic circuits. The p-type doping in ZnO wide band gap semiconductor has been a challenge for research for many years. In this work, Lithium-doped ZnO films were deposited by the RF magnetron sputtering method. The influence of post-annealing temperature on the electrical, structural and optical properties of ZnO:Li films were investigated. The results show that the ZnO:Li films show (0 0 2) preferred orientation and high average transmittance about 85% in the visible region after annealing temperature of about 550 °C. The optimal p-type conduction of ZnO:Li film is achieved at the post-annealing temperature of 450 °C with a resistivity of 0.22 Ω cm, hole carrier concentration of 2.47×10 18 cm −3 and mobility of 0.22 cm 2/V s. Finally, p–n homojunction based on transparent semiconducting oxides is fabricated.

Influence of Post-annealing Temperature on the Properties of Ti-Doped In2O3 Transparent Conductive Films by DC Ratio-frequency Sputtering

ABSTRACTIn this paper, titanium doped (2 wt. %) indium oxide (TIO) thin films deposited on quartz substrates by DC sputtering were presented. Dealt with different temperatures from 420°C to 620°C of post-annealing in vacuum for 40 minuets, the samples display different optical and electric properties. The deposited films exhibited polycrystalline in the preferred (222) and (440) orientation, with higher mobility (up to 48.6 cm2/VS) and lower resistivity (1.26 ×10-4Ω·cm) at the post-annealing temperature of 520°C. The average optical transmittance of the films is over 92% in a wavelength range from 300 to 1100 nm and the transmittance has only around 1.8% change with different post-annealing temperatures.

Influence of Post-Annealing Temperature on the Material Properties of Zinc Oxide Nanorods

Zinc oxide (ZnO) is an emerging optoelectronic material in large area electronic applications due to its various functional behaviors. We present the fabrication and the characterization of ZnO nanorods. The ZnO nanorods were synthesized using sol-gel hydrothermal technique on oxidized silicon substrates. Different post-annealing temperatures were explored in the sol-gel hydrothermal synthesis of the ZnO nanorods. The surface morphology of the ZnO nanorods were examined using scanning electron microscope (SEM). In order to investigate the structural properties, the ZnO nanorods were measured using X-ray diffractometer (XRD). The optical properties were measured using ultraviolet-visible (UV-Vis) spectroscopy. The influence of the post-annealing temperature on the realized ZnO nanorods will be revealed and discussed in this paper.

Influence of post-annealing temperature on the properties exhibited by nanostructured In doped ZnO thin films

Nanostructured of In doped ZnO thin films were prepared on quartz substrates by the sol–gel method. The thin films were crystallized at 400 °C, 500 °C and 600 °C for 1 h in air atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of In doped ZnO films were different from that of the undoped ZnO films, and showed thin overlay structure. In addition, the crystallization of In doped ZnO film was depleted higher crystallized temperatures. From XRD analysis, all films exhibited hexagonal structures. Both of In 2O 3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the morphology of In doped ZnO thin films. The chemical bonding was studied by FTIR spectra. For the photoluminescence (PL) spectrum, the optical property of the In doped ZnO film was raised at a higher crystallization concentration. Although the In 2O 3 phases reduced the structural defects of In doped ZnO thin film, the optical effect of the residual In 3+ was not enhanced completely at higher crystallized temperatures.

Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) films were deposited on quartz substrates by direct current (DC) magnetron sputtering at room temperature. The influence of post-annealing temperature on the structural, morphological, electrical and optical properties of ZnO:Zr films were investigated. When annealing temperature increases from room temperature to 573 K, the resistivity decreases obviously due to an improvement of the crystallinity. However, with further increase in annealing temperature, the crystallinity deteriorates leading to an increase in resistivity. The films annealed at the optimum annealing temperature of 573 K in vacuum have the lowest resistivity of 9.8 × 10 −4 Ω cm and a high transmittance of above 92% in the visible range.

Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films

Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300 °C. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5 × 10−4 Ω.cm is obtained from the film annealed at 400 °C in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.

Photoluminescence Properties and 5D0 Decay Analysis of LaF3:Eu3+ Nanocrystals Prepared by Using Surfactant Assist

A cationic surfactant, cetyltrimethylammonium bromide, was used to prepare LaF3:Eu3+ nanocrystals via a hydrothermal route. The influences of post-annealing temperature on the size and morphology as well as on the photoluminescence (PL) properties were studied. It was found that the PL intensity was maximized when LaF3:Eu3+ nanocrystals were calcined at 600°C. By applying a time-resolved PL spectral analysis to the 5D0–7F1, 2 decay curves, we could conclude that at the annealing temperature the most of Eu3+ ions (94.6%) were successfully incorporated in a higher symmetric site in a LaF3 lattice structure and as a result engaged in the strong PL.

Influence of post-annealing conditions on properties of ZnO:Ag films

Silver-doped ZnO films were grown on glass substrates by RF reactive magnetron sputtering. The as-grown ZnO:Ag film is insulating but behaves as p-type conduction with a resistivity of 152 Ω cm, a carrier concentration of 2.24×10 16 cm −3 and a Hall mobility of 1.83 cm 2/V s after annealing in O 2 atmosphere at 600 ∘C for 1 h. The influence of post-annealing temperature and ambience on the electrical, structural and optical properties of the films was investigated.

Low temperature solution-synthesis and photoluminescence properties of ZnO nanowires

A general and simple approach has been developed to prepare zinc oxide (ZnO) nanowires from commercially available zinc acetate precursors using a solution-phase reaction. The influence of post-annealing temperature on the morphology of the zinc oxides nanowires was also investigated. Using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) studies, we confirm that the ZnO nanowires are highly crystalline in nature with preferential orientation in the c-axis direction, with nanowire diameters of around 30–60 nm. The photoluminescence (PL) studies demonstrate a strong UV luminescence band around 382 nm, and three weak, broad bands at 454, 468, and 510 nm, respectively, in the blue and green range. After being annealed under an air atmosphere, the products show an apparent red-shift in the UV emission band. The intensity of the defect-related emission bands was significantly suppressed.