Influence Of Implantation Conditions Research Articles

Application of defect related generation current for low-dose ion implantation monitoring

The application of the reverse current I r of an implantation damaged diode for low-dose ion implantation monitoring is presented. A linear dose dependence of reverse current was found for 1H + 200 keV, 4He + 200 keV, 11B + 40 keV, and 28Si + implants within the dose range 5 × 10 9−1 × 10 12 cm −2. The temperature and time stability of the current I r and the influence of implantation conditions on its magnitude were studied experimentally and analysed by means of numerical simulations. The results showed that I r may change considerably with time and temperature mainly due to the dissociation of unstable VP pairs. It was shown that the method may be useful for very low-dose uniformity mapping of ultra-deep implants.

The influence of implantation conditions on the surface structure of polypropylene

AbstractThe influence of the fluence and the energy of implanted F+ ions on the surface structure of polypropylene was studied by measuring the contact angle and UV‐visible spectra. With increasing ion fluence and energy, the polar component of the surface energy increases. At the same time, the number and the length of double‐conjugated bindings in the polymer also increase. With higher ion energy, an increasing number of conjugations are observed but their length remains unchanged. © 1993 John Wiley & Sons, Inc.

High-Effective Ion-Implanted 6H-SiC Light Emitting Diodes with λmax=535nm

ABSTRACTThe p-n structures was formed by the implantation of Al ions into 6H-SiC n-type films and the thermal annealing. An energy of ions was in the range of 40–90 KeV, an annealing temperature -1700–2100K. We investigated the influence of implantation conditions over the defects electroluminescence of the obtained structures.After fabricating contacts and mesa-structures with areas 500–500μm our devices showed under the current of 20 mW:- integral light power 20μW,- λmax=535 nm, δλmax=80nm.For the first time was fabricated the green electroluminescence source on SiC with the value of efficiency approximated to one of the A3B5 structures, and after encapsulating it will be possible to obtain LEDs with an integral light power up to 80–100μW.

The Influence of Implantation Conditions and Target Orientation in High Dose Implantation of Al+ into Si

ABSTRACTWe report the preliminary results of a study to determine the dependence of the near surface composition and structure on total dose, dose rate, vacuum condition and substrate orientation for Al implantation into Si (111) and Si (100) with doses up to 2 × 10l8 ions/cm2. Our studies include the results of Rutherford Back Scattering (RBS), Auger Electron Spectroscopy (AES) and x-ray diffraction measurements on samples implanted with a 100 keV energy in a diffusion pumped vacuum (DPV) system (10−6 Torr) with and without a LN2 trap and in an ultra high vacuum (UHV) system (2–4) x 10−8 Torr.Results of high dose rate (50 μA/cm2 ) implantation into Si (111) in an untrapped DPV system indicate that Al segregates with a preferred (111) orientation. For a dose of 1 × 1018 ions/cm2 the surface is Al-rich to a depth of 2500Å while for lower doses the surface is silicon-rich. A carbon build-yp occurred for samples prepared by low dose rate (5 μA/cm2 ) implantation. However, no Al segregation could be observed for doses of less than 1018 ions/cm2 . A similar behavior has been observed for Si (100) except that Al segregation occurs with a polycrystalline structure. Moreover, the segregated Al is present at depths greater than the projected range.When implantation was carried out in a DPV system with a LN2 trap, no carbon peaks could be observed by RBS regardless of the dose rate. For these conditions, as well as for the implantation of Al in an UHV system, we find Al segregation with a polycrystalline structure independent of the dose rates and target orientations we used. Al is observed at a depth greater by a factor of two than the expected value from the Rpcalculations. The Al depth penetration increases with the dose of implantation.