Simple analytical relations expressing the influence of electric field strength E prevailing in the heavily-doped quasi-neutral layer of ultra-shallow (x j = 01 to 0.3 μm) silicon junctions on the emitter component of the reverse saturation current density J 0 are obtained. It is shown physically and is demonstrated mathematically that, owing to the peculiarities of such junctions, an additional field-based current term appears in the Shockley relation for the emitter component of the saturation current. For the usual values of drift velocities encountered in the heavily-doped layer of ultra-shallow junctions, the field-based term enhances substantially the emitter component of the saturation current. The particular forms of the analytical expression obtained for different practical cases of interest are detailed. The electric-field-free case is also investigated, and simple analytical expressions for emitter saturation current are derived as a function of practical values of the surface recombination vel...
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