Influence Of Deposition Conditions Research Articles

Influence of deposition conditions on structure parameters and mechanical properties of multi-element coatings based on niobium nitride

The paper presents the results of studies of the influence of the deposition conditions, coatings NbTiZrN, NbTiAlN on structure parameters and mechanical properties. It is shown that the changes of these parameters depend on the composition of coatings. It was found that the condensation temperature affects the phase composition of the coating. Data obtained can be used when choosing functional layers of multi-element coatings.

Влияние режима осаждения на полупроводниковые свойства порфириновых пленок

Влияние режима осаждения на полупроводниковые свойства порфириновых пленок

Влияние условий осаждения на состав танталовых покрытий

Влияние условий осаждения на состав танталовых покрытий

Influence of Powder Microstructure on the Microstructural Evolution of As-Sprayed and Heat Treated Cold-Sprayed Ti-6Al-4V Coatings

Cold spray repair of high-value titanium alloy components has gained considerable interest; however, the influence of deposition conditions on the resulting microstructure and properties is not well established. This work examines the influence of feedstock powder type on the microstructural evolution of cold spray-deposited Ti-6Al-4V powders following deposition and after low-temperature heat treatment. Plasma-atomized, gas-atomized, and hydride de-hydride Ti-6Al-4V powders were deposited on Ti-6Al-4V substrates using cold spray technology and subsequently annealed at 550 °C for 5 h. Powders and cold spray depositions were characterized using x-ray diffraction, optical microscopy, scanning electron microscopy, and electron backscatter diffraction. Atomized and hydride de-hydride powders were characterized by a martensitic alpha and equiaxed alpha microstructure, respectively. Phase analysis revealed hydride de-hydride powders to contain beta phase regions near alpha grain boundaries; however, beta phase was not observed in atomized powders. Atomized coatings retained their powder microstructure in particle interiors but demonstrated ultra-fine grain formation near particle boundaries, likely due to dynamic recrystallization. In contrast, hydride de-hydride powders showed a larger increase in microstrain after deposition, without ultra-fine grain formation. Heat treatment resulted in recovery and recrystallization for all coatings and, in the case of atomized coatings, resulted in beta phase precipitation in regions that experienced large plastic strains.

Influence of deposition condition on electrical properties of a-IGZO films deposited by plasma-enhanced reactive sputtering

The effects of sputtered atom flux on the electrical properties of a-IGZO films before and after thermal annealing were examined by varying the fluxes of sputtered atoms at the substrate holder. The electrical proprieties of IGZO TFTs fabricated from a-IGZO films were found to vary widely depending on the sputtered atom flux. Specifically, the electrical properties of a-IGZO films after thermal annealing improved considerably with increasing sputtered atom flux, such that a field effect mobility as high as 23.6 cm2V−1s−1 was achieved following annealing. These results suggest that the electrical characteristics of IGZO TFTs after annealing are affected by the film structure, including the density and quality of the as-deposited a-IGZO films.

Influence of deposition conditions on mechanical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method

A series of a-C:H:SiOx films was deposited on polished silicon and glass substrates by plasma-assisted chemical vapor deposition combined with pulsed bipolar substrate bias from mixtures of argon and polyphenylmethylsiloxane vapors. Different Ar pressures and substrate bias voltages were applied for the synthesis of a-C:H:SiOx films having different mechanical properties. Detailed characterization of the mechanical properties of a-C:H:SiOx films was made using the nanoindentation. Hardness and elastic modulus were used for the evaluation of the endurance capability (H/E) and resistance to plastic deformation (H3/E2). The structural properties of the deposited films were analyzed by Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. It was shown that the Ar pressure and substrate bias variation can change the film properties and the growth rate and these changes are not linear. So, depending upon application, deposition conditions are to be optimized. In all of the examined coatings, increase of Ar pressure and amplitude of negative pulse of substrate bias lead to improvement in mechanical properties. According to the results of FTIR and Raman spectroscopy; this improvement is due to an increase in the sp3 bonded carbon content and decrease of hydrogen content in the films.

Multifunctional CZTS thin films: Structural, optoelectrical, electrical and photovoltaic properties

High-quality Cu2ZnSnS4 (CZTS) thin films of different thicknesses (240 nm–418 nm) have been prepared onto pre-cleaned glass substrates using a low-cost chemical bath deposition technique. Influence of deposition conditions on the variation of the structural, optical, optoelectrical and electrical properties of the CZTS films has been inspected. The XRD patterns revealed that CZTS thin films exhibited a polycrystalline nature and follow the kieserite crystal structure. The studied films have exhibited direct energy gap transition that decreased from 1.54 to 1.48 eV. Profound analysis has been made to investigate the variation of the optical and optoelectrical properties of CZTS as a function of deposition time. A prominent increase in the nonlinear parameters has been noticed with the increase in the deposition time. This finding could shed lights on the possibility of using CZTS in nonlinear devices. The variation of the DC conductivity with temperature for the CZTS thin films has been discussed. The values of the activation energies have been decreased with increasing the film thickness which confirms the increase in film uniformity. Good correlations have been established between the structural aspects of the films to their optical and optoelectrical parameters. Cu2ZnSnS4 film (418 nm) has been selected to be utilized in fabricating the Al/n-Si/P-CZTS/Au heterojunction. Photovoltaic behavior was observed for the fabricated device which had a solar conversion efficiency of 3.37%.

Influence of deposition conditions on self-assembled growth of Pb(Zr,Ti)O<sub>3</sub> nanorods by pulsed laser deposition at elevated oxygen pressure

Influence of deposition conditions on self-assembled growth of Pb(Zr,Ti)O<sub>3</sub> nanorods by pulsed laser deposition at elevated oxygen pressure

The influence of deposition conditions and bilayer thickness on physical-mechanical properties of CA-PVD multilayer ZrN/CrN coatings

ZrN/CrN multilayers have been produced by a cathodic arc technique (CA-PVD) using different depositions conditions. Microstructural and mechanical characterizations of the coatings were performed by X-ray diffraction (XRD), scanning electron microscopy with energy dispersive spectroscopy (SEM with EDS), transmission electron microscopy (TEM), and Vickers microhardness tests. Variations in thermal transformation properties due to heating within the temperature range from 30 °C to 1400 °C were studied by differential scanning calorimetry (DSC) measurements. SEM and TEM observations showed that the coatings comprise a multilayered structure with nanometric grains. EDS spectra confirmed the formation of stoichiometric composition. Near-to-super stoichiometric nitrides can be suggested in certain specimens. Results of the XRD analysis revealed that the (200) and (111) planes for ZrN and Cr2N are the most intense. Calorimetric tests showed that below a certain annealing temperature no transformations were defined. 1180 °C was found to be the value where only one-stage state transformation, presented by endothermic or exothermic reactions, took place. The highest hardness (4685HV0.025) was obtained for the coating with Λ = 140 nm, PN = 0.43 Pa, US = −70 V.

The Microstructure Properties of Ni-W Alloy Electrodeposition

The Electrodeposition process has been used to prepare Nickel-Tungsten alloys on low carbon steel substrate by using ammonical citrate bath. The influence of deposition condition by variation of current density (0.04-0.2 A/cm2) and solution temperature (60-70 °C), on the microstructure was studied. The optical microscope and the scanning electron microscopy (SEM) were used to study the morphology of the deposit while the energy dispersive spectroscopy (EDS) was used to approximate the composition, in addition to X-Ray diffraction examination. The results show that the current efficiency has the major influence on the tungsten content in the alloys due to the formation of ternary complex which reflected into the properties of the deposit.
 Keywords:

Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films

The influence of the substrate temperature and argon gas flow on the compositional, structural, optical, and light emission properties of amorphous hydrogenated silicon carbonitride (a-SiCxNy:H) thin films were studied. Thin films were fabricated using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at a range of substrate temperatures from 120 to 170°C (corresponding to deposition temperatures of 300 to 450°C) in a mixture of SiH4, N2, and CH4 precursors. Variable angle spectroscopic ellipsometer (VASE), elastic recoil detection (ERD), and Rutherford backscattering spectrometry (RBS) verified optical bandgap widening, layer densification, and an increase of the refractive index at higher substrate temperatures. The microstructure of a-SiCxNy:Hz thin films was determined by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. The substrate temperature strongly affected the binding state of all atoms, and in particular, carbon atoms attached to silicon and nitrogen, as well as hydrogen-terminated bonds. We correlated the films' microstructural changes to a higher species' mobility arriving on the growin layer at higher temperatures. Photoluminescence (PL) measurements showed that the total intensity of visible light emission increased. A systematic blueshift of the centroid of the wide PL peak was observed following the increase of optical gap.

Influence of Deposition Conditions of Thin Polymer Films in Vacuum on Their Dielectric Properties

Influence of Deposition Conditions of Thin Polymer Films in Vacuum on Their Dielectric Properties

Influence of deposition conditions on the nature of epitaxial SrIrO3 on STO (001)

SrIrO3 (SIO) is one of the materials known to exhibit a high spin-orbit coupling with correlated semi-metallic ground state, along with the topological states, as proven in recent times. In this regard, the SIO thin films grown by us on SrTiO3 (001) at certain deposition conditions, exhibit a low temperature magneto-transport behavior which is analogous to the materials with topological states. Further, we have explored various deposition conditions of SIO such as partial pressure of O2 and different temperatures of growth for different thickness of SIO. In addition, from the electrical transport properties, SIO thin films found to exhibit semi-metallic nature with either insulating-like or a crossover from metal-like to insulating-like behavior based on the conditions chosen for the growth. Moreover, the magneto-transport data of various SIO thin films are found to be obeying the usual B2 (Lorentzian) behavior in majority of the cases. At the same time, we have also observed the weak-localization and weak-antilocalization effects; along with a linear magneto-resistance at low temperature ranges. Thus, from our extensive measurements, it becomes clear that SIO thin films can exhibit wide varieties of magneto-transport properties based on the deposition conditions. Plethora of interesting properties exhibited by the highly spin-orbit coupled SIO epitaxial thin films at lower temperatures in the presence of magnetic field makes the material to be promising for the future applications in the field of spintronics.

Vapor phase deposition of fluoroalkyl trichlorosilanes on silicon and glass: Influence of deposition conditions and chain length on wettability and adhesion forces

Vapor phase deposition (VPD) of a homologous series of fluoroalkyl silanes (FAS), containing 3 to 10 carbon atoms in a molecule, on silicon and glass substrates was investigated. Two deposition procedures were compared: 1) VPD carried out at atmospheric pressure, where silanization reactions occur in an unrestricted presence of FAS vapors and atmospheric water and 2) VPD carried out under evacuated conditions. Significant differences between topographies of the coatings obtained in the two VPD processes were found, suggesting that silanization conditions highly influenced molecular packing densities of the coatings. This, in turn, was considered to influence the trends in the acid-base (AB) component of surface free energy (SFE), macroscopic work of water-substrate adhesion and locally measured adhesion forces on these surfaces. The AB interactions were found to significantly influence wetting and adhesive properties of coatings obtained from short chain precursors by atmospheric pressure VPD (AP-VPD). Wettability and adhesive force on coatings from longer chain precursors deposited by AP-VPD and on coatings from the whole range of tested FAS precursors deposited in low-pressure VPD (LP-VPD) were found to be predominantly governed by dispersive interactions. Correlations between locally measured adhesive force and macroscopic work of adhesion were found. Considering the net effect of FAS deposition procedure on the adhesive force strength, LP-VPD was found to more effectively reduce adhesive force on Si substrates, and both deposition methods were found to be equally effective on glass substrates. Advantages and disadvantages of both deposition methods were highlighted, with references to their most suitable applications.

Influence of deposition conditions on the structure of alumina coating on metal via electrophoretic deposition with added polydimethylsiloxane-based organic-inorganic hybrid materials

ABSTRACTElectrophoretic deposition (EPD) using polydimethylsiloxane (PDMS)-based organic-inorganic hybrid materials can prepare alumina coatings on metal substrates. In this article, we investigated the influence of deposition conditions on the EPD behavior and structure of the EPD coating. We found that the PDMS-based hybrid sol and the alumina particles have different EPD behavior in the EPD suspension. It was also observed that the composition and porosity of the EPD coating can be controlled by adjusting the deposition voltage and utilizing the differences in electrophoretic behavior of alumina particles and PDMS-based hybrid sol, and by using alumina particles of appropriate morphology.

Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide**Project supported by the Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515003), the National Natural Science Foundation of China (Grant Nos. 110751402347, 61274134, 51402064, 61274059, and 51602340), the University of Science and Technology Beijing (USTB) Start-up Program, China (Grant No. 06105033), the Beijing Municipal Innovation and Research Base, China

Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has demonstrated an excellent surface passivation for crystalline silicon (c-Si) surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al2O3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250 °C given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al2O3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al2O3 sample is annealed for 15 min in forming gas in a temperature range from 400 °C to 450 °C. In addition, the passivation quality can be further improved when a thin PECVD-SiNx cap layer is prepared on Al2O3, and an effective minority carrier lifetime of 2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.

Exploiting Chemistry to Improve Performance of Screen-Printed, Bismuth Film Electrodes (SP-BiFE).

Mercury substitution is a big issue in electroanalysis, and the search for a suitable, and less toxic, replacement is still under development. Of all the proposed alternatives, bismuth films appear to be the most viable solution, although they are still suffering some drawbacks, particularly the influence of deposition conditions and linearity at low concentrations. In this paper, the most promising strategies for bismuth film deposition on screen-printed electrodes (surface modifications, polymeric film deposition, insoluble salt precursors) will be evaluated for trace metal analysis. Particular attention will be devoted to bismuth chemistry, aiming to rationalize their electroanalytic performance.

Improved electrodeposition of CdS layers in presence of activating H2SeO3 microadditive

ABSTRACT CdS thin films were deposited electrochemically onto indium tin oxide (ITO)/glass substrates from aqueous solutions containing 0.01 M CdCl2, 0.05 M Na2S2O3 and 0.02 M Edta-Na2 at −1.2 mV versus saturated sulfate reference electrode. Depositions were carried out at various temperatures (20, 50 and 80 °С) and different pH (2.5, 3.5 and 4.5) in a three electrode electrochemical cell. All above mentioned electrochemical syntheses were reproduced in presence of H2SeO3 microadditive to compare resulted CdS layers. Electrodeposited CdS thin films were characterized by different instrumental techniques to know the influence of deposition conditions on the quality of the obtained layers. It was found that the presence of 0.05–0.5 mM of H2SeO3 in the electrolyte changes the mechanism of the CdS film formation that facilitates nucleation and a growth of a more dense and uniform polycrystalline CdS film. Addition of 0.5 mM of H2SeO3 into the initial solution allowed us to obtain nearly stoichiometric (sulfur content ~52 at%) CdS films at reduced temperature value of 50 °C vs. higher temperature values used in a conventional electrodeposition process of CdS layers. No Se-containing phases were detected by EDX, Raman and XRD analyses in the CdS films. The presence of H2SeO3 tends to rearrange polytype crystalline structure of CdS to more stable hexagonal structure. The band gap value of CdS was increased from 2.3 eV to 2.5 eV as a result of H2SeO3 addition.

Electrodeposition of Ni2+-doped PbO2 and physicochemical properties of the coating

The kinetics of PbO2 electrodeposition from nitrate electrolytes containing nickel ions, and the influence of deposition conditions on the physicochemical properties of obtained materials, have been investigated. This study reveals that the mechanism of Ni2+/PbO2 electrodeposition is not in conflict with that of PbO2 formation in the absence of foreign species that we described earlier. Accordingly, electrochemical formation of PbO2 occurs in four stages, two of which are electron transfer steps while the other two are chemical reactions involving formation and decay of soluble intermediates consisting of 3 and 4-valent lead species. We observed an inhibition of Pb2+ electrooxidation in the presence of Ni2+ that is attributable to partial blocking of the active surface sites by the adsorbed foreign cations. Interestingly though, blocked active sites that inhibit the growth of PbO2 show, at the same time, a high activity for O2 evolution. Changing of the electrolyte composition and conditions of electrodeposition of PbO2 (deposition potential, temperature and pH) significantly influences the physicochemical properties of the PbO2 deposits. In particular, the phase and chemical composition, the crystallographic orientation, the content of structural water and the nature of adsorbed oxygen-containing particles on the electrode surface. Concerning the last point, bearing direct relevance to the electrocatalytic properties, we noted that Ni2+/PbO2 electrodes feature a significant increase in the amount of labile oxygen intermediates on the electrode surface which are responsible of a high electrocatalytic activity in the O2 evolution reaction.

Evaluation of residual stress in sputtered tantalum thin-film

The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300°C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300°C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.