Process curves that are obtained during reactive magnetron sputtering can exhibit a double S-shape, also termed a double hysteresis. A previous study mainly focused on the relationship between the double shape behavior and the reaction kinetics of implanted reactive ions, although chemisorption also defines the target condition. As a follow-up study, the influence of chemisorption on double hysteresis is computationally studied by high-throughput calculations using a state-of-the-art model for reactive sputtering. The analysis reveals that the magnitude of the double hysteresis is a conserved quantity for the chemisorption driven reactions at the substrate level. At the target level, a balance between compound formation by direct reactive ion implantation and chemisorption is established. A minimal condition for double hysteresis is derived and process conditions are identified for which the double hysteresis can be measured for target materials prone to strong chemisorption of the reactive gas. The condition can assist to further explore the close interplay between chemisorption and implantation during reactive sputtering.
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