This research focuses on the design and modeling of a Through-Silicon via (TSV) inductor, tailored for integration within an interleaved boost converter. The TSV inductor features a winding structure designed with vertical TSVs linked to horizontal rectangular connections, creating an efficient topology. A comprehensive electrical model has been developed to account for all parasitic effects arising from the various physical components of the TSV inductor. MATLAB software was employed to analyze the influence of different materials used in the construction of the TSV inductor, with the goal of optimizing its inductance values and quality factor. This approach involved selecting materials that minimize energy losses, thereby enhancing the overall performance of the inductor. To validate the electrical parameters derived from the physical characteristics and material properties, the TINA simulation software was used. It simulated the interleaved boost converter circuit incorporating the TSV inductor’s equivalent electrical circuit for accuracy verification.
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