Indium Titanium Oxide Research Articles

Low-Temperature Synthesis of Single-Phase Barium Strontium Titanate Thin Film with a nm-Seeding Technique and Its Dielectric Properties

Dielectric barium strontium titanate (Ba0.5Sr0.5TiO3, BST) thin films containing crystalline seeds of BST nanoparticles were prepared on indium titanium oxide (ITO) glass electrodes with a complex alkoxide precursor method. BST precursor solution that dispersed the BST particles was spin-coated on the electrode and annealed at various temperatures. Thickness of the film was about 300 nm, and BST particle concentration in the film was varied from 0 to 17 mol%. An unseeded BST film was crystallized into a perovskite structure by annealing at 600∘C, while the seeding with the 17 mol%-BST particles promoted crystalline growth of BST perovskite and lowered crystallization temperature of the films to 525∘C. Measurement of dielectric properties at 1 kHz showed that the 4.9 mol% BST-seeded film annealed at 600∘C had a relative dielectric constant of 303, which was higher than that of the unseeded BST film.

Effects of Organic Self-assembled Polymer and Metal Phthalocyanine Multilayers on the Surface Photovoltaic Properties of Indium Tin Oxide and Titanium Oxide

Using a layer-by-layer self-assembly technique, we have deposited multilayers of nickel phthalocyanine tetrasulfonate (NiPc) and poly(diallyldimethylammonium chloride) (PDDA) onto indium tin oxide ...

Low-Temperature Synthesis of Single-Phase Lead Zirconate Titanate Thin Film with a nm-Seeding Technique.

Ferroelectric lead zirconate titanate (PZT) thin films containing crystalline seeds of barium strontium titanate (BST) nanoparticles were prepared by the complex alkoxide precursor method on indium titanium oxide (ITO) glass electrodes. The PZT films approximately 500nm thick at BST particle concentrations of 0-34.2mol% were fabricated with a spin-coating method and annealed at various temperatures. A non-seeded PZT film was crystallized into a perovskite structure by annealing at 500°C. The seeding with the BST particles promoted crystalline growth of PZT perovskite around the seeds, and lowered the crystallization temperature of the PZT films to 420°C.

An optical biosensor employing tiron-immobilised polypyrrole films for estimating monophenolase activity in apple juice

A method is described for the incorporation of tiron as a substrate for tyrosinase enzyme into a polypyrrole film deposited on indium titanium oxide (ITO) glass. The presence of tiron in the polypyrrole film is verified by cyclic voltammetry (CV). The enzyme activity using the polypyrrole–tiron film is confirmed by the catalytic conversion of immobilised substrate to quinones by the enzyme. The use of both potentiometric and optical methods for the detection of the catalytic activity of the polypyrrole–tiron film and their potential use for the determination of monophenolase activity of apple polyphenol oxidase is described. This is the first report of this kind whereby tiron has been immobilised in a polypyrrole matrix for the enzyme activity determination.

Real time monitoring of lymphocyte proliferation by an impedance method

Impedance methods are routinely used to estimate the concentration of viable bacteria in a culture. We have adapted an impedance method to monitor the growth of lymphocytes and used it to monitor lymphocyte proliferation in real time. In this method lymphocytes were cultured in modified micro-well strips with transparent indium–titanium oxide coated electrodes at the bottom. The assay was totally automated and did not involve handling of radioactive chemicals. As the method uses a non destructive method of recording the proliferation, the cells could be used for other studies after the proliferation assay. Due to the real time monitoring of proliferation, results could be obtained within 30 h and additional information such as the rate of proliferation and the limiting rate at time→0 could also be calculated instantly.

X-Ray Mask Fabrication Process Using Cr Mask and ITO Stopper in the Dry Etching of W Absorber

An X-ray mask fabrication technology using a tungsten (W) absorber with a chromium (Cr) mask and indium titanium oxide (ITO) stopper was developed. When SF6 was used as the dry etching gas, substantial side etching occurred because the F radical reacts with W on the sidewall. In order to prevent side etching, a SF6 and CHF3 gas mixture was applied; however, the ratio of dry etching rate of W to that of resist is low. Furthermore, the underlying layer such as that of silicon dioxide (SiO2), which was used as the etching stopper, was easily damaged. Instead of a resist mask and SiO2 stopper, a Cr layer as the etching mask and ITO layer as the stopper layer were applied. By the use of these structures and etching procedures, high aspect ratio W patterns with vertical sidewalls have been successfully fabricated.