Indium Phosphate Research Articles

A DFT investigation of an InP bilayer: A potential gas sensor with promising adsorption and optical response

In this study first-principles calculations based on density functional theory (DFT) were performed to study the nature of the electronic and optical characteristics of the gases CO2, CO, H2S, SO, and SO2 adsorption on indium phosphate InP bilayer surface. Four initial adsorption sites were chosen to investigate the more effective and sensitive adsorption location for the adsorbed gases. Our findings indicate that the adsorption of CO2 gas exhibits a physical nature, in contrast to the chemical nature gases. Delocalized electrons are observed in the interlayer region in the ELF of CO2 on the InP bilayer. This result suggests the absence of a chemical bond between the CO2 gas molecule and the InP bilayer. According to an analysis, a gas molecule's adsorption might be influenced by InP bilayer's optical properties. Overall, the calculations demonstrate an excellent potential of InP bilayer to act as a gas sensor for studies gases.

Microfluidic Biosensor Decorated with an Indium Phosphate Nanointerface for Attomolar Dopamine Detection.

Developing functional materials that directly integrate into miniaturized devices for sensing applications is essential for constructing the next-generation point-of-care system. Although crystalline structure materials such as metal organic frameworks are attractive materials exhibiting promising potential for biosensing, their integration into miniaturized devices is limited. Dopamine (DA) is a major neurotransmitter released by dopaminergic neurons and has huge implications in neurodegenerative diseases. Integrated microfluidic biosensors capable of sensitive monitoring of DA from mass-limited samples is thus of significant importance. In this study, we developed and systematically characterized a microfluidic biosensor functionalized with the hybrid material composed of indium phosphate and polyaniline nanointerfaces for DA detection. Under the flowing operation, this biosensor displays a linear dynamic sensing range going from 10-18 to 10-11 M and a limit of detection (LOD) value of 1.83 × 10-19 M. In addition to the high sensitivity, this microfluidic sensor showed good selectivity toward DA and high stability (>1000 cycles). Further, the reliability and practical utility of the microfluidic biosensor were demonstrated using the neuro-2A cells treated with the activator, promoter, and inhibiter. These promising results underscore the importance and potential of microfluidic biosensors integrated with hybrid materials as advanced biosensors systems.

Temporal transformation of indium speciation in rice paddy soils and spatial distribution of indium in rice rhizosphere

Indium is a potentially toxic element that could enter human food chains, including soil-rice systems. The submerged environment in rice paddy soil results in temporal and spatial variations in the chemical properties of the rice rhizosphere and bulk soils, expected to cause changes in indium's chemical speciation and consequently affect its bioavailability. Therefore, this study aimed to investigate indium speciation and fractionation in soils at different periods of rice growth under continuous submergence using X-ray absorption spectroscopy and a sequential extraction method. The predominant indium species were identified as indium-associated Fe hydroxide, and indium hydroxide and phosphate precipitates. The reductive dissolution of indium-associated Fe hydroxides led to the release of indium into the soil solution under continuous submergence of soils, and the released indium concentration decreased with time due to re-sorption and re-precipitation. Meanwhile, indium hydroxide was found to be the predominant species in rice rhizosphere using μ-X-ray absorption spectroscopy. The relative depletion of indium-associated Fe hydroxides in the rice rhizosphere was attributed to the low mobility of indium from bulk soil to rice rhizosphere and the root uptake of indium associated with Fe hydroxide around rice roots. Consequently, indium uptake by rice roots was lower during the reproductive and grain-ripening stage of rice growth. Understanding the behavior of indium will help develop a strategy to minimize uptake into crops in indium-contaminated paddy soils.

Polymer-like Inorganic Double Helical van der Waals Semiconductor.

In high-performance flexible and stretchable electronic devices, conventional inorganic semiconductors made of rigid and brittle materials typically need to be configured into geometrically deformable formats and integrated with elastomeric substrates, which leads to challenges in scaling down device dimensions and complexities in device fabrication and integration. Here we report the extraordinary mechanical properties of the newly discovered inorganic double helical semiconductor tin indium phosphate. This spiral-shape double helical crystal shows the lowest Young's modulus (13.6 GPa) among all known stable inorganic materials. The large elastic (>27%) and plastic (>60%) bending strains are also observed and attributed to the easy slippage between neighboring double helices that are coupled through van der Waals interactions, leading to the high flexibility and deformability among known semiconducting materials. The results advance the fundamental understanding of the unique polymer-like mechanical properties and lay the foundation for their potential applications in flexible electronics and nanomechanics disciplines.

Antibonding ground states in crystal phase quantum dots

Atomistic approaches enable computational studies ofnanostructures with unusual properties. Here, the authors showthat the indium phosphate zinc-blende section embedded in a wurtzitenanowire, thus forming so-called crystal phase quantum dots, mayexhibit a rare antibonding hole ground state. The authors also findthat even a small lattice mismatch at the wurtzite/zinc-blendeinterface can profoundly mix the lowest hole states, resulting inunusual double-peak features in the excitonic optical spectra. Furtherresearch is, however, needed to determine strained band offsets inpolytype homostructures, allowing for better agreement betweenexperiment and theory.

Understanding of controllable optical memory using 1D InP based photonic structures at three communication windows

The present research realises a controllable optical memory using one dimensional indium phosphate (InP) photonic structures at three optical communication windows (850, 1310 and 1550 nm). The photonic structures comprise 21 layers of InP and air material. The memory applications are realised at both single and dual signals of the communication windows. The physics of the research deals with the materials property including the variation of the refractive indices with respect to the input signal. Similarly, mathematics of the works relies on the analysis of reflectance, transmittance and absorbance phenomena. Further, the light from visible spectrum acts as triggering signal to realise optical memory applications. Finally, it is revealed that InP based photonic structures are suitable for controllable memory applications pertaining to the singlewavelength (850, 1310, 1550 nm) or dual wavelengths (850 and 1310 nm, 1310 and 1550 nm, 1550 and 850 nm).

On Topological Indices for Complex Indium Phosphate Network and Their Applications

A chemical compound in the form of graph terminology is known as a chemical graph. Molecules are usually represented as vertices, while their bonding or interaction is shown by edges in a molecular graph. In this paper, we computed various connectivity indices based on degrees of vertices of a chemical graph of indium phosphide (InP). Afterward, we found the physical measures like entropy and heat of formation of InP. Then, we fitted curves between different indices and the thermodynamical properties, namely, heat of formation and entropy. Curve fitting was done in MATLAB through different methods based on linearity and nonlinearity. Furthermore, we depicted our results numerically and graphically. These numerical systems may give an approach to concentrate on the thermodynamical properties of the compound design of InP at an exceptional level that will help understand the connection between framework measurement and these actions.

Indium phosphate oxalates with layered structures: Solvent-free approach, hydrothermal stability, and proton conduction

Two new crystalline indium phosphate oxalates (denoted SCU-23 and SCU-25) were synthesized by a solvent-free approach. The two inorganic-organic hybrid solids have different layered structures intercalated with organic cations. Notably, SCU-25 remains stable in boiling water and shows appealing proton conductive behaviors.

Stable Crystalline Organic-Inorganic Hybrid Indium Phosphate with Dye Removal and Ractopamine Detection Applications.

A highly stable framework of an organic-inorganic hybrid indium phosphate (NTOU-7) was synthesized under hydro(solvo)thermal conditions and structurally characterized by single-crystal X-ray diffraction and solid-state NMR spectroscopy. This is the first example of a post-transition-metal phosphate incorporating tetradentate organic molecules. The In atoms in the inorganic layers are coordinated by imidazole rings of the 1,2,4,5-tetrakis(imidazol-1-ylmethyl)benzene linkers to generate a new solid-state material. NTOU-7 showed high chemical stability and displayed excellent performance for both dye removal and ractopamine (RAC) detection, which are interesting environmental and biosensing applications. The sensitivity and ultralow limit of detection were 607.9 μA·μM·cm-2 and 2.74 × 10-10 mol·L-1 (0.08 ppb), which meet the requirements stated by the Codex Alimentarius Commission (10 ppb RAC residue in beef and pork). The detection performance was confirmed by sensing spiked-in RAC in real pork samples. We also reported the synthesis, characterization, structural stability, dye removal, and sensing properties of NTOU-7.

Sulfide Passivation of InP(100) Surface

Passivation of the n-InP(100) surface with sodium sulfide (Na2S) aqueous solution is analyzed by photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). The room-temperature PL intensity increases essentially even after short treatment with sulfide solution for 1 min. The enhancement in the room-temperature PL intensity after passivation decreases with the increase in the bulk doping level of the semiconductor. Time-resolved PL studies performed at liquid-nitrogen temperature indicate reduction in the surface recombination velocity. This improvement of the PL intensity occurs just after transformation of the native oxide layer consisting mainly of indium phosphates to the passivating layer consisting of indium sulfides and oxides. The surface bands in n-InP(100) remained nearly flat both before and after sulfide passivation.

InP(1 0 0) surface passivation with aqueous sodium sulfide solution

Passivation of n-InP(100) surface with an aqueous sodium sulfide solution was investigated by photoluminescence and x-ray photoelectron spectroscopy techniques. It was found that even a brief treatment for 1 min turns out to be enough for an essential enhancement of the photoluminescence intensity, which comes amid etching off the surface indium phosphate layer and formation of In–S and In–OH surface chemical bonds. A longer sulfide treatment results in a smaller photoluminescence enhancement due to formation of indium oxide, in addition to In–S and In–OH bonds. Both native-oxide-covered and sulfide-treated n-InP(100) surfaces have almost no band bending. The enhancement of photoluminescence intensity after sulfide treatment can be explained by modification of the surface states spectrum due to the transformation of the surface chemical bonds.

The triple structure design of 2D amorphous Fe-doped indium phosphate nanosheets as a highly efficient electrocatalyst for water oxidation

A triple structure engineering strategy, combining amorphization, two-dimensional morphology design and Fe doping, is developed to promote the OER activity of metal phosphates, simultaneously enhancing the catalytic active sites and intrinsic activity.

Synthesis and Functionalization of Copper-Doped Indium Phosphate Quantum Dots with Ratiometric Fluorescence

The doped quantum dots (QDs) that feature dual emission in one nanocrystal and long fluorescence lifetime have gained great interest in biosensing and bioimaging applications. In this work, we report the synthesis and functionalization of copper ion-doped indium phosphate (Cu:InP) QDs that exhibit simultaneous green InP emission and red Cu[Formula: see text] emission. The oil-soluble QDs were synthesized by adsorbing Cu[Formula: see text] onto InP core, followed by growing zinc selenide (ZnSe) shell via the successive ion layer adsorption reaction. During the synthesis, fluorescence ratiometry (and resultant multiple fluorescence colors) can be generated by changing either the dopant amount or the shell-growth time, but they act in a different manner: increasing the Cu[Formula: see text] amount results in quenched InP emission and oppositely improved Cu[Formula: see text] emission; the increase of shell-growth time leads to continuously improved Cu[Formula: see text] emission relative to constant InP emission. Further, functionalization of the oil-soluble Cu:InP QDs with dihydrolipoic acid-polyethylene glycol (DHLA-PEG) via ligand exchange produces the water-soluble and biocompatible dual-emission QDs. The PEGylated Cu:InP QDs present desirable charge neutrality and excellent thermal stability and photostability, thereby holding high potential in a diversity of biomedical applications.

“Efficient Indium Phosphate based Quantum Dot Light Emitting Diode using Sol-gel processed Electron Transfer Layer”

“Efficient Indium Phosphate based Quantum Dot Light Emitting Diode using Sol-gel processed Electron Transfer Layer”

“Efficient Indium Phosphate based Quantum Dot Light Emitting Diode using Sol-gel processed Electron Transfer Layer”

“Efficient Indium Phosphate based Quantum Dot Light Emitting Diode using Sol-gel processed Electron Transfer Layer”

High-pressure structural investigations on InPO4

High-pressure Raman scattering and angle dispersive x-ray diffraction investigations have been carried out on Indium phosphate (InPO4). Our experimental studies show that ambient Cmcm phase of InPO4 remains stable up to ~10 GPa. On the further increase of pressure to ~12 GPa, diffraction patterns show the signature of structural phase transformation. Rietveld refinements of diffraction patterns suggest that at high-pressure both the zircon (Space Group I41/amd) and scheelite (Space Group I41/a) type tetragonal phases are present along with the ambient orthorhombic Cmcm phase. In both the zircon and scheelite phases, the indium atoms become eight coordinated with respect to the oxygen atoms while phosphorous continues to be four coordinated.

Photonic crystal based routers for photonic integrated on chip networks: a brief analysis

Photonic integrated circuits are the devices in which multiple devices are integrated in a single substrate to obtain the functionality of entire components as a single chip. In this paper, the photonic crystal based optical 4 × 4 routers for photonic integrated on chip networks is designed and the characteristics of the same are reported. The investigation of the router is extended by varying the crystal radius and materials. The materials such as germanium (Ge) of RI 4.0029, gallium arsenide of RI 3.3219 and indium phosphate (InP) of RI 3.457 are used for the router formation. Performance of the router is examined for the wavelength gamut of 1500–1600 nm and the routed wavelengths are tabulated. Crosstalk (CT) and insertion loss (IL) are the crucial determinants of the router and compared to all the router configurations Ge pillared router has minimum CT and InP pillared router has minimum IL. The diminutive structured router in the size of 33 μm × 36 μm has been depicted to place the footprints on the integrated photonics of ultra- compact device employment.

Insight into crystal structure and Eu/Tb doped luminescence property of a new phosphate

Luminescent materials were of vital importance in the display, lighting, and biomedical fields. Exploration of novel inorganic host materials and groping for novel color-tunable phosphor materials with good thermal stability is still a major challenge for the quality-improvement of FLs and LEDs. In the present work, a new magnesium indium phosphate, Mg3In4P6O24 (MIP), was successfully synthesized by conventional high-temperature solid-state reaction and was structurally characterized by powder X-ray diffraction analysis, in which magnesium and indium atoms co-occupy four metal cation sites, coordinating with adjacent oxygen atoms forming distorted MO5 and MO6 polyhedra. The VUV-UV excited luminescence properties of a series of Eu3+/Tb3+ doped MIP phosphors were investigated, with the temperature-dependence of photoluminescence and relative mechanism analyzed. Under the excitation of 254 nm, the MIP: EuxTby phosphors can generate bright color-tunable green-yellow-red light by changing the doping concentration. In addition, the color of emission can also be adjusted by altering the excitation wavelength for a very phosphor, MIP: Eu0.01Tb0.05. As an interesting discovery, the plot of integrated dominant emission intensities of Eu and Tb in phosphor MIP: Eu0.01Tb0.05 versus excitation wavelength exhibits analogical profile with the excitation spectra of Eu3+/Tb3+ single-doped MIP phosphor. Moreover, the representative phosphor MIP: Eu0.01Tb0.05 shows favorable thermal stability. Present work indicates that Mg3In4P6O24 is a promising host material for the fabrication of new phosphors.

Measurement of Nonlinear Dielectric Behaviour of Semiconductor Material Under Microwave Field in Dual-Mode Rectangular Cavity

In this letter, a microwave cavity for investigating the effect of external microwave fields on the dielectric behavior of semiconductor material is proposed. We use a dual-mode rectangular cavity where the stimulus and test signals are supplied by two different swept frequency microwave sources. By adjusting the power level of the stimulus signal, the intensity of microwave field in the cavity is changed. Two band-stop filters are introduced to isolate the signals coming from the stimulus signal. Measurement results show that the dielectric properties of indium phosphate manifest nonlinear behavior under the electronic field intensity of $10^{5}$ V/m. From the experimental result and theoretical analysis, we conclude that the nonlinear behavior is caused by the material’s inherent characteristics.

Experimental Investigation on the Interaction Mechanism Between Microwave Field and Semiconductor Material

An experimental method and apparatus for investigating the interaction mechanism between microwave field and semiconductor material are presented in this paper. The investigation is based on a dual-mode compressed rectangular cavity, which includes the TE102 and TE103 modes. The TE102 mode is used for providing the stimulus signal, which supplies the microwave field during the experiment, and the TE103 mode is for testing. The two modes are individually coupled to the cavity, and two band-stop filters are introduced to isolate the signals coming from both the modes. A directional coupler is utilized to monitor the power level of the stimulus signal. Experimental results demonstrate that microwave field may affect the inherent characteristics of indium phosphate, a typical kind of semiconductor materials, which eventually leads to the nonlinear behavior of the dielectric property. After the microwave field strength exceeds a critical value, the nonlinear behavior of the microwave materials becomes more and more drastic along with further increasing field strength, and according to the particular experiment setup, we conclude that the nonlinear behavior is not caused by microwave thermal effect, but some inherent characteristics of the material itself. In addition, the experimental method and apparatus can also be employed to predict the consequences of the non-thermal action of microwave effect of other high-power microwave material under microwave field.