Changes in the structure of polycrystalline indium oxide after irradiation with xenon ions with energies of 140 and 300 keV have been studied. It has been found that irradiation with xenon ions leads to a change in the chemical composition of indium oxide, accompanied by phase transformations, an increase in the reflective intensity of X-ray lines of the indium oxide structure, and an increase in the unit cell parameter over the depth of the sample. The X-ray method was used to separate the elastic and inelastic effects of xenon ions on the structure of indium oxide. The concentration of xenon ions, dissolved over the depth of the sample, was determined as a function of the irradiation energy. A structural model of the dissolution of xenon ions in the indium oxide lattice is presented, which explains the formation of an ionic bond of xenon with indium and oxygen atoms and anionic vacancies. The intercalation of xenon ions into the octahedral positions of indium oxide leads to the formation of an interstitial solid solution based on indium oxide along the depth of the sample. It has been found that the energy of defect formation in the structure of indium oxide after irradiation of the samples depends on the dose of xenon ions and the irradiation energy. The experimental and theoretical calculations were made to determine the lattice parameter and ionic radius of xenon in the XeO 2 compound, and the correct mechanism for the formation of an interstitial solid solution based on indium oxide was found. A mathematical model has been calculated that explains the increase in the reflective X-ray intensity of indium oxide lines over the depth of the sample after irradiation with xenon ions. Ill. 9. Ref. 18. Tab. 3.