Abstract
AbstractWe investigated interactions between UV light and Indium Tin Oxide (ITO) thin films sputtered at room temperature. Owing to their photon energy, higher than the band gap of In2O3 (3.5–4.0 eV), KrF (5.0 eV) or XeCl (4.0 eV) lasers proved useful, at high fluences (1‐3 J/cm2) for minute laser shaping, at low fluences (100 mJ/cm2) for laser annealing, or even at very low fluences for gases desorption. Sputtered ITO becomes totally amorphous when an oxygen flow is mixed in the process argon and adjusted for the lowest resistivity. As non optimised layers behave like gas sensors, amorphous ITO is immune to atmospheric agents. The band structure of indium oxide and exposures to UV light at selected wavelengths helped to a better understanding of the gas sensing mechanisms on oxygen rich and oxygen poor layers. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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