Indium Ions Research Articles

Crystal structure of bis-(μ2-5-nona-noylquinolin-8-olato)bis-[aqua-dichlorido-indium(III)

Crystallization of 5-nona-noyl-8-hy-droxy-quinoline in the presence of InCl3 in aceto-nitrile yields a dinuclear InIII complex crystallizing in the space group P. In this complex, [In2(C18H22NO2)2Cl4(H2O)2], each indium ion is sixfold coordinated by two chloride ions, one water mol-ecule and two 8-quinolino-late ions. The crystal of the title complex is composed of two-dimensional supra-molecular aggregates, resulting from the linkage of the Owater-H⋯O=C and Owater-H⋯Cl hydrogen bonds as well as bifurcated Carene-H⋯Cl contacts.

Analog and digital resistive switching in W/TiO2/ITO devices: the impact of crystallinity and Indium diffusion

The resistance-switching memristor with capabilities of information storage and brain-inspired computing has prime importance in recent research. In this study, the impact of crystallinity and Indium diffusion on the existence of analog and digital resistive switching in a W/TiO2/ITO device has been reported. The memristor devices are fabricated by depositing titania films by sol–gel and spin-coating techniques. The films annealed at 250 °C and 400 °C were characterized using x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy (XPS). The characteristic anatase phase started appearing after annealing at 400 °C, whereas the 250 °C annealed sample was in the amorphous state. The electrical characterization revealed significant differences in the switching characteristics of amorphous and crystalline samples, especially in the switching interface, compliance properties, and current conduction mechanism. The grain boundary assisted oxygen vacancy migration, and the diffusion of indium ions from the ITO bottom electrode helped the crystalline sample to show highly stable and reproducible resistive switching compared to amorphous film. The XPS studies confirmed the indium ion diffusion in the crystalline sample. The oxygen vacancy-induced barrier modulation and conductive filament formation caused characteristic switching in amorphous and crystalline samples, respectively. Schottky emission in the amorphous film and SCLC mechanism in the crystalline film confirmed the experimental results. This study provides a distinctive viewpoint and an innovative strategy for developing multifunctional resistive switching devices.

Composition-Regulated Photocatalytic Activity of ZnIn2S4@CdS Hybrids for Efficient Dye Degradation and H2O2 Evolution.

Heterostructures of visible light-absorbing semiconductors were prepared through the growth of ZnIn2S4 crystallites in the presence of CdS nanostructures. A variety of hybrid compositions was synthesized. Both reference samples and heterostructured materials were characterized in detail, regarding their morphology, crystalline character, chemical speciation, as well as vibrational properties. The abovementioned physicochemical characterization suggested the absence of doping phenomena, such as the integration of either zinc or indium ions into the CdS lattice. At specific compositions, the growth of the amorphous ZnIn2S4 component was observed through both XRD and Raman analysis. The development of heterojunctions was found to be composition-dependent, as indicated by the simultaneous recording of the Raman profiles of both semiconductors. The optical band gaps of the hybrids range at values between the corresponding band gaps of reference semiconductors. The photocatalytic activity was assessed in both organic dye degradation and hydrogen peroxide evolution. It was observed that the hybrids demonstrating efficient photocatalytic activity in dye degradation were rather poor photocatalysts for hydrogen peroxide evolution. Specifically, the hybrids enriched in the CdS component were shown to act efficiently for hydrogen peroxide evolution, whereas ZnIn2S4-enriched hybrids demonstrated high potential to photodegrade an azo-type organic dye. Furthermore, scavenging experiments suggested the involvement of singlet oxygen in the mechanistic path for dye degradation.

Oxygen-defect rich SnO2-based homogenous composites for fast response and recovery hydrogen sensor

As a kind of green energy, hydrogen (H2) has been widely concerned and applied by people. One of the biggest challenges for sensing applications is the quick detection of hydrogen leaks or their release in various conditions, particularly in large electric vehicle batteries. This study successfully constructed a quick response and recovery hydrogen sensor based on the In2O3-SnO2 heterojunction. The response and recovery time of the In2O3-SnO2 hydrogen sensor is 1.1/1.9 s to 50 ppm H2. This is reduced to 11.0 %/9.5 % compared to the SnO2 hydrogen sensor. This sensor's remarkable gas detecting properties are mainly attributed to the In2O3-SnO2 heterojunction creation, crystal structure modification, and increased specific surface area (92.9 m2/g). Homogenous In2O3-SnO2 nanocomposites contain more oxygen defects, which is the primary factor enhancing the sensor's ability to detect gases. Firstly, indium ions are incorporated in the lattice of SnO2 results in lattice distortion and enhances the presence of oxygen deficiency in the composites, which plays a pivotal role in achieving rapid response and recovery of the sensor. Secondly, In2O3-SnO2 heterostructures promote rapid adsorption of oxygen molecules and target gases by facilitating effective electron mobility on their surface. The quicker response and recovery times of hydrogen sensors based on In2O3-SnO2 heterojunctions are observed. This innovative approach to creating fast-responding gas sensors highlights the promise of heterojunction-based hydrogen sensors for real-time H2 monitoring and opens up new research directions.

Atomic structure of In2O3 films on InSb nanowire and nanosheet

Surface reactions of indium antimonide (InSb) nanowires and nanosheets, including oxidation, often result in the performance deterioration of semiconductor devices. In this study, we characterized the oxide films of InSb nanowires/nanosheets at the atomic level. The oxide film on the nanowire is composed of In2O3, which grows in islands and layers along the (1¯11) and (002) planes of the matrix. The oxide film on the lateral side of the InSb nanosheet was amorphous and thinner than the oxide film on the nanowire. In2O3 grew via the external diffusion of indium ions. The oxide films on the InSb nanowires and nanosheets are closely related to the InSb surface features.

1,1,2,2-Tetra(4-carboxylphenyl)ethylene-Based Metal-Organic Gel as Aggregation-Induced Electrochemiluminescence Emitter for the Detection of Aflatoxin B1 Based on Nanosurface Energy Transfer.

In this Letter, a sensitive DNA sensing platform was developed using an indium-ion-coordinated 1,1,2,2-tetra(4-carboxylphenyl)ethylene (TPE) metal-organic gel (In-MOG) as an aggregation-induced electrochemiluminescence (AIECL) emitter and nanosurface energy transfer (NSET) as an efficient quenching strategy for detecting aflatoxin B1 (AFB1), the most dangerous food toxin. The coordination occurred in indium ions, and carboxyl groups restricted the internal rotation and vibration of TPE molecules, forcing them to release photons via radiative transitions. The quenchers of microfluidic-produced gold nanoparticles were embedded in a long-tailed triangular DNA structure, where the quenching phenomenon aligned with the theory of ECL-NSET under the overlap of spectra and appropriate donor-acceptor spacing. The proposed analytical method showed a sensitive ECL response to AFB1 in the wide concentration range of 0.50-200.00 ng/mL with a limit of detection of 0.17 ng/mL. Experimental results confirmed that constraining luminescent molecules using coordination and bonding to trigger the AIECL phenomenon was a promising method to prepare signal labels for the trace detection of food toxins.

Hydrothermal preparation of a novel indium doped MoO3 photocatalyst with enhanced photocatalytic activity for Rhodamine B degradation

In this work, a simple one-step hydrothermal approach was used to successfully manufacture a novel indium doped molybdenum trioxide (In–MoO3) photocatalyst for enhancing the photocatalytic degradation of Rhodamine B (RhB) under simulated light. The structural characterization of In–MoO3 confirms successful addition of indium ions to the MoO3 lattice. Importantly, the performance of the doped samples was significantly enhanced when the doping mass of indium accounted for 5 % under simulated light, and the RhB degradation rate reached 96.2 %. Even after four cycles, the doped sample proved to maintain excellent cycling stability. The proposed photocatalytic mechanism for the RhB degradation by In–MoO3 is presented. It is revealed that ·OH acts as the primary active species in this photocatalytic system, while ·O2− also plays a supporting role. Indium doping improves the light absorption and effectively reduces the interfacial charge transfer resistance and bandgap width, leading to significant progress in the photocatalytic performance of MoO3.

Simulation and experimental study of InN nanoparticles synthesized by ion implantation technology.

In order to synthesize InN nanoparticles (NPs), we have simulated the co-implantation of indium (In) and nitrogen (N) ions on silicon (Si) and silicon oxide (SiO2) substrates with flat-top profiles. The choice of flat-top profile is to increase the possibility of creating homogeneous zone with well-distributed InN nanoparticles over the entire implanted layer. In this view and to obtain these flat-top profiles, we must do several implantations with different doses and energies optimized by our program. The simulation results performed on a silicon substrate < 111 > , give an average dose of 4.30 × 1016 at./cm2 and the implantation energies were In (10, 46, and 180 keV) and N (13 and 35 keV). But for the SiO2 substrate, the total mean dose is about 5.20 × 1016at./cm2 for each Indium and nitrogen ion. The respective implantation energies were In (23, 63, and 120 keV) and N (12 and 28 keV) in an average depth of approximately 100 nm. The implantations were performed in a 206-nm-thick (SiO2) layer thermally grown on < 100 > silicon. Subsequent thermal treatments (500-900°C) lead to the formation of nanoparticles precipitates of the compound semiconductor (InN) and to cure the oxide defects during different periods of time. To verify that indium (In) and nitrogen (N) ions were located according to flat curves, we used RBS technical and study the formation (InN) stoichiometric compound several techniques, were used such as X-ray diffraction, UV-visible-IR, and photoluminescence (PL) spectroscopy. The simulated profiles have been chosen with the aim that the implanted element not exceeding 5-10 at %maximum concentration for each species. We have elaborated our program to simulate these profiles using data as input values from SRIM2008 code taking into account the sputtering factor. The optimal conditions are determined, which are the expected depth impact energies (Rp), the standard deviation (ΔRp) and the sputtering corrosion factor (Fs). Through these results, a simulation program has been created which allows building flat "distribution" curves for ion implantation for each element (In and N), so that each curve is obtained from three Gaussian functions whose values are carefully chosen in relation to the optimal experimental conditions.

Indium Tin Oxide Induced Internal Positive Feedback and Indium Ion Transport in Perovskite Solar Cells.

Stability is the most pressing challenge hindering the commercialization of perovskite solar cells (PSCs), and previous efforts focused more on enhancing the resistance of PSCs to external stimulus. Here, we found that the indium tin oxide (ITO) will deteriorate the photovoltaic performance of PSCs through positive feedback cycles. Specifically, the perovskite degradation products will cross the electron transport layer to chemically etch the electrode ITO to generate In3+, which will migrate upwards into the perovskite film. Then, the reaction that corrodes ITO consumes the decomposition products of perovskite and shifts the balance of the perovskite decomposition reaction, further promoting the degradation and thus falling into a positive feedback cycle. Moreover, the In3+ in the perovskite film was found to accumulate at the upper surface, which would lead to n-type doping of perovskite film to form the energy barrier for interface carrier extraction. Subsequently, the chelating molecule ethylenediaminetetraacetic acid disodium salt (EDTA-2Na) was introduced onto ITO to firmly chelate the In3+ and prevent it from migrating upward, thus breaking this internal positive feedback cycle and significantly enhancing the efficiency and stability of PSCs. This work provides new perspectives for understanding the mechanism of photovoltaic performance loss and ionic transport in PSCs.

Indium Tin Oxide Induced Internal Positive Feedback and Indium Ion Transport in Perovskite Solar Cells

AbstractStability is the most pressing challenge hindering the commercialization of perovskite solar cells (PSCs), and previous efforts focused more on enhancing the resistance of PSCs to external stimulus. Here, we found that the indium tin oxide (ITO) will deteriorate the photovoltaic performance of PSCs through positive feedback cycles. Specifically, the perovskite degradation products will cross the electron transport layer to chemically etch the electrode ITO to generate In3+, which will migrate upwards into the perovskite film. Then, the reaction that corrodes ITO consumes the decomposition products of perovskite and shifts the balance of the perovskite decomposition reaction, further promoting the degradation and thus falling into a positive feedback cycle. Moreover, the In3+ in the perovskite film was found to accumulate at the upper surface, which would lead to n‐type doping of perovskite film to form the energy barrier for interface carrier extraction. Subsequently, the chelating molecule ethylenediaminetetraacetic acid disodium salt (EDTA‐2Na) was introduced onto ITO to firmly chelate the In3+ and prevent it from migrating upward, thus breaking this internal positive feedback cycle and significantly enhancing the efficiency and stability of PSCs. This work provides new perspectives for understanding the mechanism of photovoltaic performance loss and ionic transport in PSCs.

Preparation and freshness detection of tofu based on In-doped CeO2 ammonia gas sensor

An ammonia (NH3) sensor with high sensitivity based on indium-doped cerium oxide (In/CeO2) was prepared by hydrothermal method, and its sensing mechanism was revealed by first-principles. Experimental results show that indium ion (In3+) doping can effectually increase the sensitivity of NH3 sensor based on CeO2, which is mainly attributed to the enhancement in the number of oxygen vacancies and oxygen free radicals on the surface of In/CeO2. In/CeO2 sensor for NH3 with a response value of 5412.93 at a concentration of 1000 ppm, which is 65 times that of CeO2 sensor. Moreover, the low detection limit (LOD) of In/CeO2 is 0.433 ppm and its response/recovery time to 5 ppm NH3 is 1.1 s/1.4 s. Furthermore, the density functional theory (DFT) calculation confirmed that NH3 has higher adsorption-induced charge transfer and adsorption energy on the surface of In/CeO2 than other gases. This makes it easier for In/CeO2 to adsorb NH3 molecules and release more conduction electrons, thus improving the performance of In/CeO2. In addition, In/CeO2 sensor can be effectively used to detect the freshness of tofu through the concentration of NH3 released by the tofu in different storage environments. This work is beneficial to the safety monitoring of high protein food.

Restraint of Nonradiative Recombination via Modulation of n-Phase Distribution through Interfacial Lithium Salt Insertion for High-Performance Pure-Blue Perovskite LEDs.

Quasi-two-dimensional perovskite has been widely used in blue perovskite light-emitting diodes. However, the performance of these devices is still hampered by random phase distribution, nonradiative recombination, and imbalanced carrier transport. In this work, an effective strategy is proposed to mitigate these limitations by inserting lithium salts at the interfaces between the hole transport layer (HTL) and the perovskite layer. The perovskite film on the inserted Li2CO3 layer exhibits reasonable n-value redistribution, which leads to the repressive nonradiation recombination and enhanced carrier transport. Moreover, the inserted Li2CO3 layer also improves the electrical conductivity of PEDOT:PSS and hinders indium ion diffusion from the PEDOT:PSS layer to the perovskite film, which inhibits exciton quenching and nonradiative recombination loss at the HTL/perovskite interface. Taking advantage of these merits, we have successfully fabricated efficient pure-blue PeLEDs with an external quantum efficiency of 6.2% at 472 nm and a luminance of 726 cd cm-2. The restraint of nonradiative recombination at the interface offers a promising approach for efficient pure-blue PeLEDs.

Application of Novel Gill Cell Line from Lates calcarifer for Recognizing Metals Using Probes.

Lates calcarifer (Bloch) is a potential candidate fish species for culture in marine and brackishwater. A continuous gill cell line was derived from L. calcarifer by the explant culture method and has been passaged for 132 times, in Leibovitz's L-15 medium containing 10% fetal bovine serum (FBS) at 28°C. The cells showed a rate of recovery between 90 and 95% after being successfully cryopreserved at various passage levels and formed monolayer in 2-3days without any morphological changes. Immunophenotypic analysis of the SBG cell line revealed that they are of epithelial origin. Polymerase chain reaction assay using mitochondrial 12S rRNA primer specific to L. calcarifer was used to confirm the authenticity of the established gill cell line origin from seabass. The transfection efficiency was evaluated in Seabass Gill (SBG) cell line using pEGFP-N1 and Lipofectamine™ 3000. Transfection efficiency was found to be between 13 and 16%. The cytotoxicity of three different metal detecting probes was evaluated by MTT and Alamar blue assays to determine safe concentration. The result revealed that SBG cell line can be applied for recognition of metals using probes. The current study established, for the first time, a gill-derived cell line (SBG) from Lates calcarifer and its application for the detection of intracellular indium, mercury, and lutetium ions by specific fluorescent probes.

Multiple factors influencing high-purity indium electrolytic refining

The effects of various contaminants in the electrolytic refinement of indium were investigated using a glow discharge mass spectrometer (GDMS). The effects of several factors such as the indium ion (In3+) concentration, the sodium chloride (NaCl) concentration, the current density, the gelatin concentration, the pH, and the electrode distance, were examined. Significant variations in impurity levels concerning gelatin concentration were observed. Both the gelatin and In3+ concentration were moderately positively correlated with the Pb content. The Sb concentration was associated positively with the NaCl concentration, while the Ti concentration had an adverse correlation with the NaCl concentration. The Bi element content was positively linked to the electrode distance. As the current density increased, Cu, Pb, and Bi impurities initially rose and then eventually declined. Notably, a critical current density of 45 A·m−2 was identified in this behavior.

Influence of the Laser Pulse Annealing of the Silicon Implanted with Indium and Arsenic Ions on its Optical and Structural Properties

Influence of the Laser Pulse Annealing of the Silicon Implanted with Indium and Arsenic Ions on its Optical and Structural Properties

Electron impact broadening and atomic data for As IV-V, Mo V and In V spectral lines

Missing Stark broadening parameters for 33 spectral lines of several arsenic, molybdenum and indium ions (7 As IV, 4 As V, 12 Mo V and 10 In V lines) have been calculated using a quantum-mechanical method. All the considered spectral lines for As IV and As V have been detected for the first time in the atmospheres of cool DO white dwarfs HD 149499 B and p=HZ 21, these four As V lines that have been discovered in HD 149499 B are also present in the UV spectrum of hot white dwarf (WD) RE 0503−289. All the considered spectral lines for Mo V have been recently discovered for the first time in the ultraviolet (UV) spectrum of the DO-type white dwarf (WD) RE 0503−289. Also, the ten considered lines for In V have been detected in the ultraviolet (UV) spectrum of the DO-type white dwarf (WD) RE 0503−289, that five among those discovered — recently — for the first time. This recent discovery encourages us to calculate their Stark widths to fill the lack of the data base STARK-B and for use in investigations of observed spectra in such stars. Before the Stark widths evaluation, two calculation steps have been carried out : in the first step, we calculate the atomic structure and then the electron-ion collision as a second step using the sequence of the codes (superstructure, distorted wave, and jajom) of University College London. We provide our results for these lines at different temperature values and at density Ne=1017 cm−3.

Efficient and clean treatment of indium-bearing zinc ferrite: A new approach using a water-regulated deep eutectic solvent

Indium, a strategic key metal, is mainly recovered from zinc leaching residue. However, a challenging problem in the treatment of zinc leaching residue is how to efficiently and cleanly treat the poorly soluble phase, the indium-bearing zinc ferrite (IBZF). Here, we propose a novel strategy for the selective extraction of indium, zinc and iron from IBZF. By introducing water to regulate the coordination environment of a choline chloride-anhydrous oxalic acid based deep eutectic solvent (ChCl-Oxa based DES), efficient leaching and deep separation of indium, zinc and iron were achieved. Water, acting as both co-solvent and diluent, played a critical role in the whole process. The addition of a little water reduces the viscosity of the DES, thereby improving the leaching of indium, zinc and iron. Under specific leaching conditions (leaching temperature of 90 °C, liquid/solid ratio of 20:1 ml/g, molar ratio of ChCl:Oxa = 1:1, molar ratio of DES:H2O = 1:3 and reaction time of 3.5 h), the leaching efficiencies of indium, zinc and iron were 96.27 %, 95.55 % and 96.33 %, respectively. The subsequent addition of large amounts of water dilutes and dissociates the structure of the DES, facilitating the stepwise precipitation and deep separation of metal ions. The precipitation efficiency of zinc and iron reached 93.06 % and 98.07 %, respectively. Residual indium ions in the solution were effectively adsorbed by activated carbon, with a recovery efficiency of 75.7 % after five cycles of adsorption. The solution separated from the metal ions was well regenerated by evaporation and addition of Oxa. Our work represents a novel approach for the recycling and clean utilization of zinc leaching residue. And the regulation of the coordination environment of metal ions in DES is proved to have great potential in metal recycling.

Sorption of indium(III) and gallium(III) by iron(II) hexacyanoferrate

ABSTRACT Iron(II) hexacyanoferrate is highly reactive to various metals, including indium and gallium. Systematic studies on the sorption process of In3+ and Ga3+cations by iron(II) hexacyanoferrate were conducted using the model system “Fe4[Fe(CN)6]3∙5Н2О – In3+– Ga3+– Н2О.” It has been revealed that iron(II) hexacyanoferrate exhibits sorption properties concerning the studied cations. The sorption kinetics of indium(III) and gallium(III) ions were studied under static conditions, employing the limited volume method. The highest degree of sorption of In3+ cations at all concentrations was observed at 25°C. For a system with СIn = 50 mg/l Кс = 49%, СIn = 80 mg/L − 43%, СIn = 125 mg/L − 40% and СIn = (170–200) mg/L − 38%. Gallium(III) cations are sorbed by iron(II) hexacyanoferrate to a lesser extent. The degree of their sorption does not exceed 40–44%. Physicochemical methods (IR spectroscopy, X-ray diffraction analysis, electron microscopy) substantiate the regularities and peculiarities of the sorption process of In3+ and Ga3+cations by iron(II) hexacyanoferrate. It was found that iron hexacyanoferrate(II) exhibits preferential sorption ability with respect to In3+cations. The sorption of indium cations by iron(II) hexacyanoferrate follows a zeolite absorption-like process. Iron hexacyanoferrate(II) efficiently sorbs In3+ and Ga3+ ions, thus offering benefits in water purification, chemical separation, industry, and pollutant removal.

Separation of indium and tin from ITO powders with short-chain dicarboxylic acid-ChCl deep eutectic solvents: Indium tin leaching and splitting mechanism

The substitution of corrosive mineral acids with green deep eutectic solvents (DESs) for extracting rare and precious metals from discarded electronic devices has a sustained appeal for developing clean hydrometallurgical processes. However, the dissolution mechanism of DESs on specific metals still requires an exhaustive understanding. In this work, short-chain dicarboxylic acid-choline chloride DESs were used to dissolve indium tin oxide (ITO) to achieve the separation of indium and tin. Kinetic and thermodynamic studies have shown that the leaching of indium and tin was considered a mixed control of diffusion and chemical reaction, with low activation energies (Ea(In) = 39.93 kJ/mol, Ea(Sn) = 39.52 kJ/mol). The electrospray ionization mass spectrometry (ESI-MS) analysis of the leaching solution and molecular orbital calculations revealed that tin was leached in the main form of [Sn4+(OH−)3(H2O)]+ cation as well as slight [Sn4+MA2−(Cl−)3]− anion, while the dominant ions of indium were [In3+(Cl−)4]− ligand as well as small amounts of [In3+MAH−(Cl−)4]2−, [In3+(MA2−)3]3− and [In3+MA2−(Cl−)2]−. The tin-containing species in the leaching solution can be completely precipitated in the form of cassiterite SnO2 through water dilution and hydrothermal treatment, in which amorphous indium-containing substances were mixed. Most of the indium was retained in the form of [In3+(Cl−)4]− in the liquid. After adjusting the pH of the solution, over 99% of the indium precipitated out as In(OH)3, and after calcination at 600 °C in air for 1 hour, In2O3 was obtained. This study unveiled the leaching mechanism of short-chain dicarboxylic acid-choline chloride DESs on ITO powders. It developed a green, simple, and mild process for potentially recovering ITO-based materials.

Catalysis of Indium Ion Electroreduction in the Presence of Acetazolamide in Chlorates(VII) Solutions with Varied Water Activity.

The influence of acetazolamide (ACT) on the kinetics and the mechanism of electroreduction of In(III) ions as a function of changes of the water activity was investigated using electrochemical methods (DC, SWV, CV and EIS, CV). The multi-step mechanism of the electroreduction process should take into account the dehydration step of indium ions and the presence of In-ACT (,,cap-pair" effect) active complexes, mediating electron transfer, located in the adsorption layer. Differences in the electrode mechanism in the presence of ACT were observed for higher chlorates(VII) concentrations (above 4 mol ⋅ dm-3 chlorates(VII)) reflected by a lack of step wise nature of the electrode process. The highest catalytic activity was observed in 4 mol ⋅ dm-3 chlorates(VII).