Indium Bromide Research Articles

Indium(I) bromide-mediated bromocyanomethylation of carbonyl compounds

Bromocyanomethylation of a variety of carbonyl compounds to produce the corresponding 2-bromo-3-hydroxynitriles has been achieved in moderate to good yields by the action of dibromoacetonitrile and indium(I) bromide. Moderate diastereoselectivity was observed. Exclusive mono-coupling at the carbonyl group was found with 1,2-diketones and α-haloketones.

Reaction of Indium Bromide with 1,4-Dilithiotetraphenylbutadiene. Synthesis and Molecular Structure of (Et2O)2Li(Br)2In{(C4Ph4)}2In(Br)2Li(OEt2)2: A Novel Ten-Membered-Ring Organometallic Complex

Reaction of 1,4-dilithiotetraphenylbutadiene with indium bromide affords the organometallic complex (Et2O)2Li(Br)2In{(C4Ph4)}2In(Br)2Li(OEt2)2 as yellow monoclinic crystals. The two 1,4-tetraphenylbutadienylene units are bridged by two indium atoms, affording a severely twisted In2C8 ten-membered ring.

Structure of concentrated aqueous solutions of indium chloride and bromide. Modelling of the structure of electrolyte solutions

Concentrated aqueous solutions of indium bromide (3.06 mol dm-3) and chloride (3.22 mol dm-3) were investigated by x-ray diffraction. In order to interpret the profile of the diffraction patterns, the existence of positional correlations between cation complexes and between cation complexes and (free) anions extending to distances beyond 7 Å is discussed. These complexes are constituted by the coordination around the indium cation of two anions, bromide or chloride, and five (six? for the bromide solutions) water molecules. The structure of these complexes was previously investigated by Raman spectroscopy and by EXAFS. Results of these and of other investigations are compared with those recently obtained.

InCrBr3: A Ternary Indium Bromide Containing Jahn−Teller Unstable Cr2+ and the Magnetic Structures of InCrBr3 and InFeBr3

Yellow needles of InCrBr3 are synthesized from molten InBr3 and elemental Cr at 450 °C. Its monoclinic crystal structure (a = 412.09(3) pm, b = 1500.6(1) pm, c = 937.65(6) pm, β = 94.386(6)°; P21/c...

α,ω-Alkanediyldiindium

The reaction of indium(I) bromide with α,ω-alkanediylbis(bromomercury) complexes (alkane = butane, pentane, and hexane) resulted in formation of the corresponding α,ω-alkanediylbis(dibromoindium) compounds, which were isolated as THF adducts. The THF molecules of the complexes are easily displaced by bromide anions, thus affording the corresponding α,ω-alkanediylbis(tribromoindate) dianions.

A Novel Synthesis of Allyl and Propargyl Selenides Promoted by Indium

Promoted by indium, allylic and propargyl bromides react with diorganyl diselenides in THF to give allylic and propargyl selenides in moderate to good yields.

Indium as an Electrophilic Center in Polyfunctional Lewis Acids

The reaction of indium(I) bromide with ortho-phenylenemercury and 1,2-bis(bromomercurio)benzene leads to the isolation of the polyfunctional Lewis acid−Lewis base adducts (o-C6H4(InBr(THF)2))2 (2) and Hg(o-C6H4(InBr2(THF)))2 (3), respectively.

Disproportionation of Low Valent Indium Bromide: Synthesis and Molecular Structure of Bis (2, 6-Dimesityl-Phenyl) Indium Bromide, (2, 6-Mes2C6H3)2InBr (Mes = 2, 4, 6-Me3C6H2). When does Trigonal Planar Become T-Shaped?

Bis(2, 6-dimesitylphenyl) indium bromide, (2, 6-Mes2C6H3)2 InBr (Mes = 2, 4, 6-Me3C6H2), I, has been prepared and characterized by 1H NMR, elemental analyses, IR spectroscopy, and single-crystal X-ray diffraction. I may be approached by either of two synthetic routes. Whereas I may be readily prepared from reaction of indium (III) bromide with (2, 6-dimesitylphenyl) lithium in Et2O, it may also be approached by an interesting disproportionation of Br2In-InBr2 in the presence of (2, 6-Mes2C6H3) Li. The title compound crystallizes in the monoclinic space group P21/n (No. 14) with unit cell parameters a = 12.341 ((2)A, b = 20.799 (4) A, c = 16.512 (2) A, β = 101.18 (1)°, D calcd = 1.31 g cm −3, and V = 4158 (1)A3 for Z = 4. Refinement, based on 1661 observed reflections, converged at R = 0.072, Rw = 0.071. The In-Br bond distance is 2.505 (4) A. As the steric demands of the two bulky ligands are sufficient to result in a C-In-C bond angle of 157.3 (8)° — the widest angle reported for a three-coordinate indiu...

Synthesis, Crystal Structure, Electronic Structure, and Magnetic Properties of In2ThBr6

In{sub 2}ThBr{sub 6}, a reduced indium bromide containing univalent indium and tetravalent thorium, is synthesized from indium tribromide, thorium tetrabromide, and elemental indium at moderate temperatures. The monoclinic crystal structure, determined via Rietveld refinement of high-precision X-ray powder diffractometer data ({alpha} = 879.12(1) pm, b = 1467.00(2) pm, c = 904.64(1) pm, {beta} = 91.153(1){degrees}; C2/c; Z = 4), is built up from three-dimensionally interconnected ThBr{sub 8}{sup 4-} bisdisphenoids and InBr{sub 9}{sup 8-} monocapped cubes, the latter polyhedra being significantly distorted. The analysis of the chemical bonding of In{sub 2}ThBr{sub 6}, as well as the explanation of the novel compound`s weak paramagnetic susceptibility (direct van Vleck type), is based on ab initio all-electron scalar-relativistic band structure calculations.

Reactive Ion Etching of Indium Tin Oxide with Hydrogen Bromide

Reactive ion etching of indium tin oxide (ITO) with hydrogen bromide has been investigated, and two fundamentally different etching regimes have been identified. To reveal the basic mechanisms of etching, we have studied the effect of substrate temperature on etch rate by monitoring the emission intensity of atomic indium from the plasma. The results indicate that there are two different types of rate‐limiting steps in the etching process, and that the etch rate is strongly temperature‐dependent. At room temperature, the total etch rate of ITO is low, and there is a long incubation period before the onset of etching. At substrate temperatures below 100°C, etching is rate‐limited by the slow removal of the etched product, indium bromide, and the primary contribution to etching is physical sputtering from the plasma. At temperatures in excess of 150°C, etching is rate‐limited by surface reaction of ITO with the bromine species, and the etch rate is increased by ion bardment. We have demonstrated that ITO etch rates as high as 1500 A/min are possible when a substrate temperature bias of 150°C is applied.

High temperature heat capacities of indium(III) bromide and sodium iodide by differential scanning calorimetry

The heat capacities of indium(III) bromide and sodium iodide have been determined by differential scanning calorimetry over the range 700–1000 K using specially designed high-pressure nickel containers in a commercial differential scanning calorimeter. Enthalpies and temperatures of melting were also recorded.

A new emission spectrum of indium bromide at 5200 Å

A new green emission has been observed at 5200 Å in a microwave discharge through a mixture of indium, bromine and Ne/Ar (InBr 3+Ne/Ar). The most intense part of the emission is spread over 150 Å. It is a diffuse patch with a few line-like heads, followed by double-double weak, line-like heads at the high-frequency side. The low-frequency side shows no structure. The new emission spectrum appears to be an excimer transition and may therefore be suitable for laser action.

The thermodynamics of the vaporization of liquid indium(I) bromide by modified entrainment

The transport of gaseous In(I)Br in an argon carrier gas was studied in the temperature range 680 to 935 K by the modified entrainment method. Combination of the entrainment results with a literature equation for the total vapour pressure above the liquid gave the following expressions for the temperature dependence of the vapour pressures of the monomer (In2Br2) and dimer (In2Br2) respectively: [Formula: see text] ln T − 0.001164 ± 0.00021)T, (680 −950 K) and [Formula: see text] (680–810 K); p0 = 105 Pa. The dimer concentration is ca. 14% at 680 K and decreases to ca. 4% at 810 K. Key words: high temperature thermodynamics, indium(I) bromide, vaporization thermodynamics.

The high temperature heat capacities of indium(i) bromide and indium(III) bromide by differential scanning calorimetry

The high temperature heat capacities of indium(I) bromide (crystal and liquid) and indium(III) bromide (crystal) in the temperature range 333–700 K were determined. A chemical reaction during the melting of indium(I) bromide, possibly disproportionation to give indium metal and indium(III) bromide, was also investigated.

EXAFS studies of local order in InBr3 aqueous solutions

EXAFS measurements at the In and Br k edges are reported for InBr3 aqueous solutions at various concentrations. The experimental results are in agreement with the structure of indium complexes proposed on the grounds of X-ray diffraction measurements for a concentrated aqueous solution of indium bromide. The analysis of the Fourier-filtered spectra shows that these complexes persist at least until the 1M concentration has been reached.

Raman spectroscopic investigations of concentrated aqueous solutions of InCl3 and of InBr3

Raman spectra have been observed for concentrated solutions of indium chloride and bromide in water and deuterium oxide. Isotopic shifts and the modification of these profiles were observed for the Raman bands at ca. 400 cm–1, 195 cm–1, 60–80 cm–1 in indium bromide, and ca. 400 cm–1, 295 cm–1, 90–120 cm–1 in indium chloride solutions. When the static pressure of the solution increases from 1 atmosphere up to ca. 6 kbar the value of the frequency of the 195 cm–1 Raman band increases and a small modification of the profile of the spectrum of the ca. 4 mol dm–3 indium bromide solution is observed in the region near 40 cm–1. Indium complexes with a quasi-linear configuration (halide–indium–halide) seem to be the predominant species existent in these concentrated solutions; the presence of coordinated water molecules in these complexes is apparent.

Optical Phonons in Orthorhombic Indium Bromide Studied by Resonance Raman Scattering

The anisotropy in longitudinal optical (LO) phonon spectra in orthorhombic indium bromide crystal has been confirmed by the resonance Raman scattering. By changing the crystal orientation with respect to the incident laser light, three LO phonon modes are identified referring to three principal crystallographic axes. Obtained LO phonon energies are 15.9, 17.0 and 15.5 meV for the B 3u mode (along a axis), B 2u ( b axis) and B 1u ( c axis), respectively. A Raman forbidden transverse optical (TO) phonon scattering is also observed at 6.7 meV under the resonance condition.

ChemInform Abstract: The Mono‐, Sesqui‐, and Dibromides of Indium: InBr, In2Br3, and InBr2.

AbstractThe three reduced indium bromides are synthesized by heating InBr3/In mixtures in molar ratios of 1:2, 1:1, and 2:1, resp., to 340 °C (1 d).

The mono‐, sesqui‐, and dibromides of indium: InBr, In2Br3, and InBr2

AbstractOf the four reduced indium bromides, InBr, In2Br3, InBr2, and In4Br7, synthesis, crystal growth and structure determination of the first three is reported. InBr (orthorhombic), Cmcm, Z = 4, a = 446.6(1), b = 1236.8(2), c = 473.9(1) pm, Vm = 39.42(1) cm3 mol−1) crystallizes with the TlI‐type structure. In2Br3 (orthorhombic, Pnma, Z = 16, a = 1300.6(5), b = 1649.8(5), c = 1289.7(9) pm, Vm = 104.16(9) cm3 mol −1), isotypic with Ga2Br3, is according to In2[In2Br6] a mixed‐valence InI–InII‐bromid with eclipsed [In2Br6]2− groups with d(In–In) = 268.8 and 271.6 pm, respectively. InBr2(In[InBr4]) is a mixed‐valence InIInIII bromide with the GaCl2‐type structure (orthorhombic, Pnna, Z = 8, a = 798.6(2), b = 1038.5(2), c = 1042.5(5) pm, Vm = 65.09(4) cm3 mol−1).

Polarized Reflection Spectra of Orthorhombic Indium Bromide in 2-30 eV Region

Polarized reflection spectra of orthorhombic indium bromide has been measured in 2-30 eV region by using the synchrotron radiation. From 2 to 15 eV, structure in the spectra comes from the transition from the valence bands of Br 4p and In 5s. At about 20 eV, sharp doublet structure due to In 4d NIV,V levels has been observed with several fine structures. Analysis of the intensity ratio of the doublet peaks reveals that the effect of the exchange interaction is significant in this d9 p manifold.