Indium Adatoms Research Articles

Isothermal desorption of indium from √31− In and √3− In on silicon (111) surfaces

Using RHEED (reflection high energy electron diffraction) techniques, superstructures of submonolayer indium films deposited on silicon (111) 7 × 7 surfaces have been investigated. Combination of the deposition experiments at a constant deposition rate and the desorption experiments under isothermal condition has yielded desorption energies and apparent vibrational periods of indium adatoms (66 kcal mol −1, 6 × 10 −17 s for √31 phase and 63 kcal mol −1, 3 × 10 −15 s for √3 phase). A pattern overlapping √31 + √31, observed in the desorption process, is interpreted as a fluctuation phenomenon caused by a finite interaction range of indium adatoms on silicon (111) surfaces. The range is determined to be ∼24 Å.