The cavity length of a semiconductor laser plays a key role in its operation and dynamic behaviour. Moreover, downsizing the quantum well (QW) laser chip is required for specific applications, such as hard disk drives (HDDs). Therefore, it is vital to study laser operation at various cavity lengths in micro-scale dimensions. Here, the operation of a GaInP/GaAs multiple-quantum-well laser with different short cavity lengths (i.e., 200, 300, 400, and 500 µm) at room temperature is demonstrated. The threshold current (Ith), differential efficiency, emission spectra, and near-field profile images are all experimentally reported in this study. Likewise, the modal gain threshold and mirror facet coating effects on the operation of the samples are also discussed. The Ith decreases with the increase of cavity length, whereas emission spectra exhibited a redshift by about 3 nm when the laser length rises from 200 to 500 µm. The near-field images showed a reduction in profile width when the laser length is shorter, which is attributed to a reduction of the spreading current along the laser stripe. The short cavity of the 200 µm sample showed high efficiency, low spreading current, and fast carrier dynamic but a slightly high Ith which can be reduced by coating its facets. This could be a promising small-footprint candidate laser chip for next-generation HDDs and for downsizing photonic applications.
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