Increasing Sn Content Research Articles

Study on preparation and sintering properties of nano-silver-coated tin slurry

A nano-sized silver-coated tin (Sn@Ag) slurry was prepared by heterogeneous flocculation method by adjusting the pH value of solution and selecting different dispersants. The slurry improved the oxidation resistance of tin and its dispersibility in silver matrix. The sintering strength of nanometre Sn@Ag slurry increases with the increase of Sn content. When the Sn content reaches 5%, the shear strength of the joint reaches the highest 50 MPa, which is more than 10 MPa higher than that of the pure nanometre silver slurry sintered joint. The increase of shear strength is due to the fact that the equilibrium phase formed after sintering is Ag–Sn replacement solid solution and intermetallic compound Ag 3 Sn, which have the effect of replacement solution strengthening and dispersion strengthening, respectively. It is proved by experiments and analysis that the application of nano-silver paste in chip interconnection is feasible. The research of this subject provides experimental reference and theoretical basis for the application of new generation interconnect materials in power devices and promotes the development of microelectronics packaging technology.

Analysis of structural and electrical properties of Sn modified Ca0.6Sr0.4TiO3 ceramics

In this study, we synthesized Ca0.6Sr0.4Ti1-xSnxO3 ceramics using the solid-state reaction technique, varying the Sn compositions from x = 0.0 to 0.08. X-ray diffraction analysis revealed a slight modification in the crystallographic structure of calcium strontium titanate (CST) as the Sn content increased, while confirming the formation of single-phase ceramics. Parameters such as crystallite size, lattice strain, stacking fault, and dislocation density were estimated based on the XRD data. Crystallite size generally increased with higher tin concentrations, except for x = 0.08 where a decrease was observed. The FTIR spectra exhibited a broad band, and deconvolution using a Gaussian distribution was employed to identify structural units. Density measurements demonstrated densification with increasing Sn content. The activation energy values increased from 0.76 eV for undoped CST to 0.95 eV for x = 0.06, except for x = 0.08, which measured 0.89 eV, indicating the role of Sn in modifying the structure. Activation energy was determined through linear fitting of experimental data, revealing that the reciprocal temperature dependence of DC conductivity followed Arrhenius behaviour. These findings contribute novel insights into the synthesis and characterization of Ca0.6Sr0.4Ti1-xSnxO3 ceramics, highlighting the impact of Sn on the structural and electrical properties of CST.

Microstructure and wear resistance of AlCoCrFeNiCuSnX high-entropy alloy coatings by plasma cladding

AlCoCrFeNiCuSnX (X = 0,0.03,0.05,0.1,0.2) high-entropy alloy coatings were prepared on the surface of 35CrMo steel by plasma cladding technology. The phase structure, chemical composition, microstructure and wear resistance of the coatings were studied by X-Ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), microhardness test and wear test. The results show that each coating structure is mainly dendrites. And the dendrites region (DR) consists mainly of Fe-based solid solution with BCC structure, while the interdendritic (ID) consists mainly of Cu-rich phase with FCC structure, and a small amount of AlN precipitated phase with HCP structure. The microhardness of the coating increases with the increase of Sn content. The wear resistance of the coating shows a non-linear trend of increasing and then decreasing with the increase of Sn content, and the Sn0.1 coating has the best wear resistance.

Superelastic metastable Ti-Mo-Sn alloys with high elastic admissible strain for potential bio-implant applications

The demand for titanium alloys simultaneously having high elastic admissible strain and large recovery strain for bio-implant applications is increasing. Ni-free Ti-based shape memory alloys are promising candidates for obtaining the required multifunctional properties. In this study, a wide content range of (0–15)wt% of low-cost, toxicity-free, and high-biocompatible Sn element was added to the Ti-8Mo (wt%) alloy to study its effect on the superelastic recovery and mechanical properties of biomedical Ti-Mo-Sn alloys. By tailoring Sn content, desired multifunctional properties of high elastic admissible strain and room temperature superelasticity were achieved in the studied Ti-Mo-Sn alloys. It was found that the increase in Sn content stabilized the β phase and a single β phase was obtained at room temperature in Ti-8Mo-(13, 15)Sn alloys. The addition of Sn modified the lattice parameters of the α″ martensite and β phase and affected the lattice deformation stain of β → α″. The lattice deformation strain along the [011]β direction was found to be decreased by –0.26%/wt% Sn. The room temperature superelasticity with a recovery strain of 3.1% and an elastic admissible strain of 1% was obtained in the Ti-8Mo-13Sn alloy. As Sn content increased to 15 wt%, a high elastic admissible strain of 1.56% and a recovery strain of 2.0% were obtained. These Ti-Mo-Sn alloys with excellent multifunctional properties are promising candidates for bio-implant applications.

First-principles calculations to investigate Band structure and effective masses of direct bandgap hexagonal GeSn alloys

It is well known that hexagonal Ge has a direct bandgap and exhibits excellent light emission. The structure and electrical characteristics of hex-GeSn alloys are investigated using an ab initio computation and the PBEsol-meta-GGA-mBJ function. In all alloys, the direct bandgap is observed. Due to the high radius of the Sn atom, when Sn content increases, the bandgap decreases and lattice parameters expand. Their spin–orbit, crystal field splitting and effective mass of electron and hole were also determined, indicating that the direct bandgap of hex-GeSn alloys has significant application in optoelectronic.

Sn-alloying of BaZrS3 chalcogenide perovskite as eco-friendly material for photovoltaics: First principle insight

This paper focuses mainly on investigating the effects of partial substitution of Zr cations by Sn cations on the structural, opto-electronic and photovoltaic properties of the chalcogenide perovskite BaZr1−xSnxS3 (x ≤ 0.25). For this purpose, we have used first-principles calculations. Through this approach, we show that the lattice constants and the gap energy (Eg) decrease as the Sn content (x) increases. Furthermore, the Eg values obtained decrease from 1.55 to 0.96 eV. our calculated decomposition energies suggest that it will be difficult to synthesize BaZr1−xSnxS3 alloys for higher Sn contents under thermal equilibrium conditions. Also, the calculated dielectric functions and absorption coefficient show a red shift for higher Sn content. Besides, our theoretical approach, indicate that, the compound BaZr0.815Sn0.125S3 presents a maximum photovoltaic efficiency η of 32.5% for a thickness L = 500 nm, which is close to the Shockley–Queisser limit (33.7%), which makes it a promising candidate for the production of high power conversion efficiency solar cells with ultra-thin absorption layers. sulfide alloys for lead-free perovskite solar cells.

Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam

Much effort has been expended to obtain thin films of metastable solid solutions of germanium (Ge) that contain as high tin (Sn) content as possible because of their excellent electronic and optoelectronic properties. On the basis of our previous study on amorphous Ge, we demonstrated in this study that irradiation of substrate-free films of amorphous Ge100−xSnx (x = 8, 11, and 19 at. %) with a low-energy electron beam of 3 keV at ambient temperature can induce instantaneous wide-area crystallization (explosive crystallization). Characteristic spiral crystal growth associated with explosive crystallization occurred with areas exceeding 50 μm in diameter around a scanned area of the electron beam of 8 × 8 μm2. As a result, solid solutions of GeSn with Sn concentration up to 19 at. % were obtained with the suppression of precipitation of β-Sn. The region of explosive crystallization reduced in size with increasing Sn content. In addition, thermal analyses revealed that the heat released during crystallization of amorphous GeSn films decreased with increasing Sn content. This relationship indicates that the heat release at the growth front plays a key role in the propagation of explosive crystallization of a-GeSn.

Novel approach towards ternary magnetic g-C3N4/ZnO-W/Snx nanocomposite: photodegradation of nicotine under visible light irradiation

ABSTRACT Nicotine, an exceedingly noxious alkaloid, has been reported as an emerging anthropogenic waste water contaminant for decades. The current study investigated the photocatalytic degradation of nicotine in aqueous medium. Novel g-C3N4/ZnO-W/Snx composites were fabricated by impregnation of g-C3N4 with ZnO-W and SnCl2.H2O. The XRD and FTIR data strappingly evidenced the proficient blending of g-C3N4, metal oxide and the metal used as dopant. SEM and EDS micrographs showed agglomerated morphology; layered structure with loopholes, which invetrate the elementalconfiguration of fabricated nanocomposites. Spectroscopic analysis shows red shift in the vicinity of 240–270 nanometre as a confirmation of increased Sn content. Optical analysis shows band gap tailoring (2.32–1.78 eV) with increased dopant metal content, which constrains the electron hole pair recombination. This results in the production of more ROS species in the reaction system, leading to significant increase in photoactive nicotine degradation from 24% g-C3N4/ZnO-W to 98% g-C3N4/ZnO-W/Sn(0.011). The rate constant R2 values 0.985, 0.988, 0.990, 0.992, 0.996 and 0.997 for the synthesised composites confirmed the pseudo-first-order kinetics and maximum photodegradation in acidic medium. Efficient outcomes of 98% degradation under visible light and striking recyclability results for the grown composite g-C3N4/ZnO-W/Sn (0.011) even after the fifth cycle was 93% evidenced that synthesised composite exhibits high reusability and mechanical stability. Inclusively, the present research provides an innovative approach for the fabrication of photo-catalysts in wastewater treatment.

Study of the microstructure and mechanical properties of Cu–Sn alloys formed by selective laser melting with different Sn contents

The microstructure and the mechanical properties of α-phase Cu–5Sn alloy, Cu–10Sn alloy, and Cu–15Sn alloy (wt.%) prepared by selective laser melting have been studied in this work. Under the same process condition, the laser absorption of the alloys increases continuously with the increase in Sn content. The optimal process parameters of the three alloys were obtained by Response Surface Method. The Sn content was found to have a significant effect on the relative density of the Cu–Sn alloys, as well as the laser power. The effect of laser power on the relative density of the alloys is weakened by the increase in laser absorption as the Sn content increases. Comparing the melt pool of the three alloys, they all show mainly columnar grains. As the Sn content increases, the size of the columnar grains becomes larger, and when the Sn content reaches 15 wt%, the columnar grains can penetrate through several melt pools. With the increase of Sn content from 5 wt% to 15 wt%, the tensile strength of the alloy increased from 382 MPa to 738 MPa, but the plasticity decreased significantly and the elongation decreased from 26% to 9%. As the Sn content increases from 5 to 15 wt%, the amount of solid-soluble Sn in the α-phase alloy increases, creating a lattice distortion stress field that effectively prevents dislocation movement. Thus, the stress field effectively increasing the yield and tensile strength of the alloy. Meanwhile, the increase in Sn content leads to the appearance of many brittle, hard and rich phases on the micron scale and precipitation from grain boundaries within the lattice, resulting in an increase in strength and a decrease in plasticity of the alloy. In conclusion, Cu–10Sn alloy has more excellent tensile properties and higher yield and tensile strengths with good ductility compared to Cu–5Sn and Cu–15Sn alloys.

Structural & thermal study of Sb14Se(86-x)Sn(x) chalcogenide glassy system

The structural and thermal analyses of Sb14Se(86-x)Sn(x) (x = 3 and × = 6) glassy system generated by the usual melt-quenching approach are presented in this study. Using the differential scanning calorimeter (DSC) technology, the crystallisation mechanism of the produced glass samples were investigated. With increasing Sn content there is increase in glass transition temperature Tg. The less difference in melting temperature and crystallisation temperature makes prepared glasses suitable for memory switching devices. At room temperature the infrared transmission spectra of Sb14Se(86-x)Sn(x) (x = 0, 3, 6, 9, 12 and 15) chalchogenide glasses were acquired in the 2000–2500 cm−1 spectral range. With Sn addition, far IR spectra are shifted towards the high frequency side and some new bonds appear. Because it was evident that Se atoms were being replaced by Sn atoms, a corresponding rise in the production of Sn-Sn bonds and a subsequent fall in Se-Se bonds were seen. The glasses produced in this manner exhibit improved glass forming capability and strong thermal stability. There was good agreement between experimental data and theoretical estimations of bond energy, relative likelihood of bond formation, and wave number. [copyright information to be updated in production process]

Raman Spectroscopic Characterization of Chemical Bonding and Phase Segregation in Tin (Sn)-Incorporated Ga2O3.

Using detailed Raman scattering analyses, the effect of tin (Sn) incorporation on the crystal structure, chemical bonding/inhomogeneity, and single-phase versus multiphase formation of gallium oxide (Ga2O3) compounds is reported. The Raman characterization of the Sn-mixed Ga2O3 polycrystalline compounds (0.00 ≤ x ≤ 0.30), which were produced by the high-temperature solid-state synthesis method, indicated that the Sn-induced changes in the chemical bonding and phase segregation were significant. Furthermore, the evolution of Sn-O bonds with increasing Sn concentration (x) was confirmed. While the monoclinic β-Ga2O3 was unperturbed for lower x values, Raman spectra revealed the nucleation of a composite with a distinct SnO2 secondary phase. A higher Sn content led to the formation of a Ga-Sn-O + SnO2 mixed phase compound, which was reflected in shifts in the high-frequency stretching and bending of the GaO4 tetrahedra that structurally formed the β-Ga2O3 phase. Thus, a chemical composition/phase/chemical bonding correlation was established for the Sn-incorporated Ga2O3 compounds.

Development of Hall-Petch and Hollomon models for thermo-mechanically treated Al-Cu-Mg alloys with trace additions of Sn

ABSTRACT Present study aims to develop Hall-Petch and Hollomon models for Al-6.2 wt.%Cu-0.6 wt.%Mg alloys microalloyed with varying Sn contents, under different thermo-mechanical treatments. Average grain sizes were microscopically determined, and uniaxial tensile tests were conducted to generate flow curves and evaluate yield strength of the alloys. Average grain diameter of Al-Cu-Mg base alloy decreased (by 19.9 %), while yield strength concomitantly increased (by 17.6 %), with increasing Sn content up to 0.06 wt.%. Rolled peak-aged alloys recorded highest average grain refinement and increase in yield strength by 41% and 98.8% respectively, among all thermo-mechanical treatments. Influence of grain size on mechanical strength was analytically modelled through Hall-Petch equation, using Weighted Least Square methodology. Hall-Petch parameters of the alloys were evaluated for first time, considering separate processing conditions. Yield strengths computed from Hall-Petch models were successfully compared with experimental results with fairly good accuracy, to validate estimated Hall-Petch parameters. Flow curves obtained from uniaxial tensile tests were mathematically modelled through Hollomon equation, by determining strain hardening exponent and strength coefficient, first time for investigated alloys under different processing conditions. Trace contents of Sn and processing parameters had significant potential to refine grain structure and enhance mechanical strength of the Al-Cu-Mg alloy.

Optimized AgCuSnTi filler alloy for brazing of diamond/copper combination used in microwave windows: Microstructure and mechanical performance

For the fabrication of diamond microwave windows, a solid joining of diamond with copper rings is critically required. In this work, the AgCu-mSn-nTi filler alloys were designed to braze the diamond and copper. The typical joint microstructure was characterized and its formation mechanism was unveiled. The effect of Ti or Sn fraction on the microstructure and joint shear strength was examined. Finally, an inherent relationship between the microstructure and joint bond strength was clarified. The joint average shear strength optimized reached 256.1 MPa when brazed using AgCu–10Sn–1Ti. With more Ti addition, excessive CuSn3Ti5 compounds produced early failure in the interlayer. Increasing Sn content helped to densify the interlayer. However, rigid Cu5Sn formed declined the joint strength when Sn was over 15 wt%. The work performed provided an optimized filler composition for low-temperature joining of diamond and copper and would guide the fabrication of diamond windows theoretically and technologically.

A Comprehensive Study of Sn-Ga2Te3-SnTe Amorphous Alloys: Glass Formation and Crystallization Kinetics

In this paper, newly developed tellurium-based [(Ga2Te3)34(SnTe)66]100-x-Snx amorphous alloys were prepared by the melt-spun method, with a linear velocity of 40 m/s and injection pressure of 20 kPa under an Ar atmosphere. The glass-forming region was identified in the range of x = 0 to 10 mol%. The glass transition temperature Tg and crystallization onset temperature Tc decreased monotonically with the increasing Sn content in the whole compositional range, resulting in the decrease in the stability criterion ΔT from 33 K (S2) to 23 K (S10). The crystallization kinetics were systematically investigated based on the differential scanning calorimeter (DSC) under non-isothermal conditions. The activation energies of the S8 amorphous sample determined by Kissinger and Ozawa equations were Eg (201.1~209.6 kJ/mol), Ec (188.7~198.3 kJ/mol), Ep1 (229.8~240.1 kJ/mol) and Ep2 (264.2~272.6 kJ/mol), respectively. The microscopic structure of the S8 amorphous sample and its annealed glass-ceramics were also analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). The crystalline products were identified as having a SnTe phase (primary crystalline phase) and Ga6SnTe10 phase, thus providing a promising candidate for the development of high-performance thermoelectric glass-ceramic materials.

Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga2O3 Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition

In this work, Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition were treated by rapid thermal annealing (RTA). The RTA influence on the chemical state, surface morphology, energy band alignment, and electrical properties of Sn-doped Ga2O3 films were thoroughly investigated. The results of X-ray photoelectron spectroscopy (XPS) demonstrated that Sn atoms were successfully doped into these films. Moreover, energy band alignments were obtained by the energy-loss peak of the O 1s spectrum and valence band spectra and thoroughly discussed. X-ray reflectivity (XRR) and atomic force microscope (AFM) measurements indicated that the Sn-doping level affects the interfacial microstructure and surface morphology. As the Sn content increases, the film thickness decreases while the roughness increases. Finally, the leakage current-voltage (I-V) characteristics proved that the Sn-doped Ga2O3 films have a large breakdown field. In I-V tests, all metal oxide semiconductor (MOS) capacitors exhibited a hard breakdown. This research demonstrates a method for manufacturing high-performance optoelectronic devices with desired properties.

Enhanced Thermoelectric Performance of Sn-Doped Permingeatites Cu3Sb1-ySnySe4

In this study, Cu3Sb1-ySnySe4 (0 ≤ y ≤ 0.08) permingeatites were synthesized via mechanical alloying followed by hot pressing. The phase transformation, microstructure, charge transport parameters of the permingeatites, and their thermoelectric properties were analyzed. The permingeatites were present in a single phase with a tetragonal structure, and secondary phases were not detected. The permingeatites had relative densities of 97.2%–98.5%. The lattice constants of the a- and c-axis increased when Sn was substituted at the Sb sites. With increasing Sn content, the carrier concentration increased to (2.2–4.1) × 10<sup>19</sup> cm<sup>-3</sup>; however, mobility did not change significantly, at 58–66 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>. The undoped Cu3SbSe4 behaved as a non-degenerate semiconductor. Its Lorenz number was calculated to be (1.57–1.56) × 10<sup>-8</sup>V<sup>2</sup>K<sup>-2</sup> at 323–623 K, and a maximum dimensionless figure of merit (<i>ZT</i>) of 0.39 was obtained at the temperature of 623 K, power factor of 0.49 mWm<sup>-1</sup>K<sup>-2</sup>, and thermal conductivity of 0.76 Wm<sup>-1</sup>K<sup>-1</sup>. However, the Sn-doped specimens behaved as degenerate semiconductors. Their Lorenz numbers increased to (1.63–1.94) × 10<sup>-8</sup>V<sup>2</sup>K<sup>-2</sup> at 323–623 K. Cu3Sb0.96Sn0.04Se4 exhibited a remarkably enhanced <i>ZT</i> of 0.71 at a temperature of 623 K, power factor of 1.18 mWm<sup>-1</sup>K<sup>-2</sup>, and thermal conductivity of 1.01 Wm<sup>-1</sup>K<sup>-1</sup>.

Synergy of Sn micro-alloying and thermomechanical processing on formability and precipitation behavior of Al-Mg-Si-Cu-Zn alloys

ABSTRACT The effect of Sn micro-alloying on microstructure evolution, formability and precipitation behaviour of Al-Mg-Si-Cu-Zn alloys were systematically studied by experimental techniques and theoretical calculations. Results show that Sn addition can accelerate both the precipitation and re-dissolution of the Fe-rich phase during casting and homogenising treatments, which thereby determined the final microstructure. A significant retarding effect to natural ageing precipitation was observed with increasing Sn content in quenching samples, but this effect was weakened in pre-aged samples, as explained by DSC and simulations. The different number densities of the strengthening phase β″at the same artificial aging state are mainly attributed to the changed activation energy of the β″ phase affected by the formed Sn-containing Mg-Zn clusters and Mg-Si clusters. Trace Sn participating in the formation of GP zones, Sn-containing MgZn2 phase and new precipitating sequences during ageing were proposed for the first time.

Tunable band gap, CB and VB positions of multicomponent Se65-xTe20Ge15Snx chalcogenide glassy systems: Effect of metallic additives on physical and optical parameters

In the present communication, the compositional dependency on physical, and optical properties of chalcogenide Se65-xTe20Ge15Snx (x = 5, 10, 15, and 20 at. wt. %) glassy systems have been studied. A comprehensive evaluation of various physical and optical parameters has been analyzed systematically. The spectroscopic parameters have been determined from the transmittance and reflectance spectra using spectrophotometric measurements in the range of 200 nm–1200 nm. The optical energy band gap of the as-prepared samples has been evaluated by deploying Tauc's plot method and is observed to decrease from 1.28 eV to 0.93 eV, while the calculated Urbach energy is observed to increase from 0.110 eV to 0.208 eV with the increasing content of the metallic additives. By using the Wemple-Di Domenico model, the dispersion parameters of the samples are obtained and discussed comprehensively. An increase in Sn content is found to affect the absorption coefficient, extinction coefficient, refractive index, optical density, skin depth, and optical conductivity of the glassy systems. By using the chemical bond approach the estimated cohesive energy values are found to increase from 45.39 kcal/mol to 46.75 kcal/mol. Moreover, the location of conduction and valence band edge has been estimated to examine the potential of the synthesized samples as a semiconductor device. The analyzed properties make the multicomponent Se–Te-Ge-Sn chalcogenide system, a potential candidate for numerous device applications.

Tailoring the Pore Structure of Porous Ni-Sn Alloys for Boosting Hydrogen Evolution Reaction in Alkali Solution

Ni-based alloy is an ideal candidate for its application in the field of hydrogen evolution of water splitting due to its good durability, excellent catalytic properties and low hydrogen evolution overpotential. In this paper, porous Ni-Sn alloy materials were prepared by activation reaction sintering, and the pore structure was tailored by adjusting Sn content. The effects of Sn content and electrolyte temperature on the hydrogen evolution properties of porous Ni-Sn alloy electrodes in 6 mol·L−1 KOH solution were studied by electrochemical measurement methods, such as cyclic voltammetry (CV) curves, electrochemical impedance spectroscopy (ESI) and linear sweep voltammetry, and the mechanism of hydrogen evolution was further discussed. The experimental results reveal that when Sn content is 45 wt%, porous Ni-Sn alloy exhibits the best catalytic performance for hydrogen evolution with a Tafel slope of 164.69 mV·dec−1 and an overpotential of 170 mV. The tested electrode also shows good stability for hydrogen evolution in alkaline solution, and the apparent activation energy calculated at room temperature is 29.645 kJ·mol−1. The catalytic mechanism of hydrogen evolution is as follows: the addition of Sn significantly reduces the dissociation degree of M-H bonds, thereby reducing the overpotential of hydrogen evolution; with the increase of Sn content, the porous Ni-Sn electrode displays a higher electrochemical active surface area (ECSA), which makes porous Ni-Sn alloy exhibit good hydrogen evolution catalytic performance.

Effect of Sn content on the passivity of Ti-Ta-Sn alloys

In this work, Ti-13Ta-xSn samples were manufactured using the powder metallurgy technique with a porosity near 35 %. The microstructural analysis revealed that increased Sn content decreased the α-Ti and α’-Ti phases. Furthermore, scanning electron microscopy and X-ray photoelectron spectroscopy showed that the chemical composition of the passive oxide film was influenced by the Sn content. Moreover, the electrochemical analysis revealed that the protective properties of oxide film improved with the Sn addition.