Herein, the crystal structure, valence, and electrical transport properties of La1-xBaxMnO3 films were examined by preparing La1-xBaxMnO3 films with varying Ba content (x = 0.22, 0.24, 0.26, 0.28) on LaAlO3 substrates using the sol-gel spin coating technique. The La1-xBaxMnO3 films prepared in the study exhibit topographically demorphed and non-dense characteristics in the microstructure, which is mainly caused by the Volmer-Weber growth mode of the films and the volatilization of organic matter during the sol-gel sintering process for films preparation. The increase of Ba doping leads to MnO6 deformation, decrease in grain boundary scattering, increase in Mn4+ ion content, and enhancement of both the double exchange mechanism and the Jahn-Teller effect. The four-probe results showed that the peak resistivity of the films decreased significantly with the increase in Ba2+ doping, and the metal-insulator transition temperature (Tp) shifted to higher temperatures. Peak temperature coefficient of resistivity (TCR) corresponding temperature (Tk) increased from 283.05 K (x = 0.22) to 309.31 K (x = 0.28), which was consistent with the trend of Tp; the peak value of TCR decreased with the increase of Ba doping. When x = 0.24, the Tk of the La1-xBaxMnO3 films reach room temperature (294.25 K) with TCR = 9.01 % K−1. In conclusion, the electrical properties of La1-xBaxMnO3 can be optimized by varying the amount of Ba doping to obtain La1-xBaxMnO3 films with room-temperature Tk and higher TCR values, providing reasonable data support and theoretical explanation for the Ba doping mechanism.
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