Increase In Doping Concentration Research Articles

Effect of Molybdenum Concentration and Deposition Temperature on the Structure and Tribological Properties of the Diamond-like Carbon Films

Two series of non-hydrogenated diamond-like carbon (DLC) films and molybdenum doped diamond-like carbon (Mo-DLC) films were grown on the silicon substrate using direct current magnetron sputtering. The influence of molybdenum doping (between 6.3 and 11.9 at.% of Mo), as well as the deposited temperature (between 185 and 235 °C) on the surface morphology, elemental composition, bonding microstructure, friction force, and nanohardness of the films, were characterized by atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and a nanoindenter. It was found that the increase in the metal dopant concentration led to a higher metallicity and graphitization of the DLC films. The surface roughness and sp3/sp2 ratio were obtained as a function of the Mo concentration and formation temperature. The nanohardness of DLC films was improved by up to 75% with the addition of Mo. Meanwhile, the reduction in the deposition temperature decreased the nanohardness of the DLC films. The friction coefficient of the DLC films was slightly reduced with addition of the molybdenum.

Study of Structural, Thermal and Electrical Properties of Sr-Doped CaMnO<sub>3</sub>

Sr-doped CaMnO3 materials have wide applications due to their thermal and electrical properties. The importance of the synthesis of Sr-doped CaMnO3 material for various applications encourages researchers to evaluate and refine the synthesis process. In this study, Ca1-xSrxMnO3 (x = 0; 0.05; 0.1; 0.15; 0.2) system has been prepared by sol-gel method followed by conventional sintering process at 850°C for 8 hr. A thorough discussion has been made on the outcomes derived from the investigation on the structural, electrical, and thermal properties of Sr-doped CaMnO3 system using powder x-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, DC fourprobe method, thermal expansion studies, and thermoelectric power analyses. The XRD patterns of all prepared samples exhibited single phase with orthorhombic crystal structure (space group Pnma). Rietveld refinements were performed for all the patterns by using Fullprof software to extract the structural properties. The values of unit cell volume of samples tend to increase with the increment of dopant concentration, whereas the crystallite size values were decreased with dopant concentration. The microstructures of all the samples were studied using SEM, and elemental compositions were confirmed from the EDS results. Linear thermal expansion coefficients of all the samples were found to have moderate values in the temperature range from 30°C to 800°C. The electrical properties of all the system of samples were studied in the temperature range from 30°C to 400°C using DC fourprobe conductivity setup. It was found that all the samples exhibited semiconductor nature. Sr-content on the A-site suppress the electrical resistivity up to 10% of concentration and 5% dopant content exhibited the lowest electrical resistivity. The values of Seebeck coefficient found to vary from -160 µV/K to -124 µV/K with the increase of dopant content in the parent compound.

An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer

This paper investigates an improved trench MOS barrier Schottky (TMBS) structure with extra double epitaxial layers (DE-TMBS) based on the conventional TMBS (C-TMBS) featuring a high-doped N-type current spreading layer (CSL) and a high-doped low resistance layer (LRL). Compared to the C-TMBS, the CSL in the improved structure is grown on the N-type drift region, and the LRL is extended on the CSL. According to the numerical simulations and analytical models, the specific on-resistance (Ron,sp) of DE-TMBS can be significantly reduced compared to the conventional one. This is primarily due to the high doping concentration in CSL, which effectively lowers both the JFET resistance and spreading resistance. Additionally, the increased doping concentration in LRL reduces the channel resistance and JFET resistance. Moreover, the doping concentration and thickness of CSL and LRL are optimized to maximize the figure of merit (FOM), that Ron,sp is reduced by 40.9 % and the FOM (BV2/Ron,sp) is improved by 67.9 % compared to the C-TMBS structure.

Electrochemical performance of cobalt-doped NiO thin films synthesized by spray pyrolysis

ABSTRACT In this work, various cobalt-doped NiO thin films have been synthesized via the spray pyrolysis. The cobalt-doped NiO thin films show a cubic phase with preferred orientation along the (111) plane. The scanning electron microscopy images of the cobalt-doped NiO thin films show interconnected flakes with small agglomerated particles. The optical bandgap decreases from 3.30 eV for the undoped NiO thin film to 2.90 eV for 20 mol% cobalt doping, with an increase in cobalt doping concentration in NiO. The electrochemical activities have been tested in 2M KOH electrolyte with cyclic voltammetry, galvanostatic charge–discharge and electrochemical impedance spectroscopy. The highest specific capacitance observed for the 10 mol% cobalt-doped NiO thin film electrode is 760 Fg−1 at a scan rate of 5 mVs−1. The 10 mol% cobalt-doped NiO thin film electrode shows 92% retention in capacitance after 1000 cycles and a low charge transfer resistance of 10 Ωcm2.

Static disorder in perovskite-type proton-conducting oxides BaSn1-xMxO3-x/2-(y/2)H2O (M = Ga, Sc, In, Y, La): a novel approach based on statistical analysis of numerous DFT simulated structures.

Perovskite-type proton-conducting oxides inherently include defects such as substitutional aliovalent cations, oxide ion vacancies, and interstitial protons. These defects introduce static disorder into their crystal structures. To investigate such disorder in BaSn1-xMxO3-x/2-(y/2)H2O (M = Ga, Sc, In, Y, La), we employ a novel approach based on density functional theory (DFT) simulations. This approach involves the structural optimization of a large number of relatively small, randomly constructed supercells, followed by statistical analysis of their geometric, energetic, and vibrational properties. Our key findings are as follows. The structural disorder becomes more pronounced as the dopant concentration increases, and as the dopant ionic radius increases from Sc to La. The O-H covalent bond lengths, as well as the number densities, of hydrogen atoms display clearly different distributions depending on whether the hydrogen atoms are trapped by aliovalent cations or not. The hydrogen-trapping energies appear to decrease as the geometric similarity of O-H covalent bonds between trapped and untrapped hydrogen atoms increases. Hydrogen atoms simultaneously trapped by more than one dopant atom exhibit considerable stability, potentially hindering proton diffusion at high dopant concentrations. The O-H stretching wavenumber decreases as the O-H covalent bond length increases, showing a very strong and nearly linear correlation between the two. The simulated IR absorption spectra show semi-quantitative agreement with the measured spectra. These new findings demonstrate the effectiveness of the present 'statistical' approach for investigating static disorder.

Effect of laser heating on partial decomposition of ZnCo2O4 nanoparticles: Raman study

We conducted a comprehensive investigation into the nanostructuring of the ZnO/CoO mixture by laser heating and optical attributes of partial decomposition of the obtained two-phase system represented by ZnO and ZnCo2O4. Starting mixtures were obtained across a broad range of dopant, CoO, concentrations, spanning from 5 % to 90 % of CoO. The samples were methodically prepared using the coprecipitation method and subjected to calcination at 600 °C. Laser-induced heating experiments were conducted at nine distinct laser powers. The characterization of these samples was accomplished through the utilization of SEM, XRD, and Raman spectroscopy. XRD analysis unveiled the presence of ZnO and ZnCo2O4 phases. Concurrently, we systematically monitored nanostructuring effects caused by laser-induced heating, the influence of partial decomposition on the behavior of surface optical phonons (SOP), and phase transitions in the samples with varying dopant concentrations during the performed experiment. New phases, including Zn1-xCoxO, ZnyCo3-yO4, CoO, and even the Co3O4 phase, were unveiled. The Raman spectra obtained distinctly indicate the presence of surface optical phonons (SOP), emphasizing the existence of the ZnO phase. The alterations in the behavior of surface optical phonon (SOP) modes were meticulously examined by laser-induced heating nanostructuring effects where it became evident that there was a discernible loss of these modes with an increase in dopant concentration and laser power. This detailed study sheds light on the intricate interplay between dopant concentration, laser power nanostructuring, partial decomposition, and the evolution of phase transformations and surface optical phonon modes in the examined samples.

Stoichiometry modulated tunable optoelectronic properties of Nb-doped WS2 synthesized by chemical vapor deposition method.

Significant progress has been made in the field of two-dimensional WS2, yet the precise control of the doping process to achieve desired properties and the interpretation of complex physical phenomena in these novel materials necessitate thorough research. In this study, Nb-doped WS2 is synthesized using chemical vapor deposition technology, leading to triangular flakes with a side length of 12-20μm. The X-ray photoelectron spectroscopy analysis indicates that the NbW substitution defect functions as an electron acceptor. The interlayer and transverse forces of the Nb-doped WS2 flake approach 1 nN and 150 pN, respectively. As the doping concentration increases, the valence band maximum energy of Nb-doped WS2 ranges from 4.06eV to 4.3eV. Furthermore, the performance of the photodetector is discussed.

Synergistic modulation of SrTiO3-TiO2 colossal permittivity system by internal lattice defects and phase composition: Experimental and theoretical investigations

The SrTiO3–TiO2 composite ceramics with different contents of La doping were fabricated by traditional solid-state sintering methods. The performance of the colossal permittivity ceramics was enhanced by the synergistic design of the internal defect structure and phase composition. When the doping content is 2%, SrTiO3–TiO2 composite ceramics possessed a colossal permittivity (ԑr ∼ 1.1 × 105), low dielectric loss (tanδ ∼ 0.050) and favorable thermal stability (−70 °C-150 °C, ΔC/C25°C ≤ ±15%). Phase structure analysis suggested that a TiO2 secondary phase was induced at the grain boundaries of SrTiO3 phase with the addition of La3+ ions. XPS and dielectric behavior analyses revealed that oxygen vacancies and lattice defects formed by inhomogeneous ion-doping act to modulate the dielectric behavior in ceramics. The IBLC interfacial effects in relation to semiconductor grains and insulation grain boundaries are the main contributors to the colossal permittivity (CP) properties of ceramics, and the contribution of the IBLC effects becomes more prominent with increasing doping content. On the basis of first-principles analysis, the ceramic lattice undergoes severe deformation when the La content is increased, and the gathering of electrons at oxygen vacancies and defects is evident. As a result, it leads to enhanced grain semiconducting properties and interfacial effects, which facilitate colossal permittivity and low dielectric loss for ceramics. The results are prospective in the application of CP ceramics.

First-principle study of the effect of Hf doping and VO-Hi co-existence on absorption spectrum, conductivity and carrier activity of β-Ga2O3

At present, some progress has been made in the study of Hf doping on the conductivity. However, few studies on the effects of Hf doping, and O vacancy and interstitial H co-existence on photoelectric properties of β-Ga2O3. O vacancy and interstitial H will inevitably exist during the preparation of β-Ga2O3. Given these problems, the effects of Hf doping, O vacancy and interstitial H co-existence on photoelectric properties of β-Ga2O3 were studied using first-principles calculations. Results show that doping and defects affect the photoelectric properties of β-Ga2O3 to some extent. With increased Hf doping concentration, the bandgap of the system decreases gradually, the absorption spectrum in the deep ultraviolet region red shifts, the carrier activity and carrier lifetime are enhanced. The mobility and conductivity of the system also increase with increased doping concentration. The Hf doping and interstitial H can effectively improve the conductivity of the system. In summary, Hf can be used as a powerful candidate material for designing and preparing β-Ga2O3 optoelectronic devices.

Enhancing electromagnetic properties of NiCuZn ferrites through Nb and Li Co-doping for wireless power transfer

With the rapid development of wireless charging technology, there is a growing demand for ferrite materials with high permeability, high saturation magnetic induction intensity, and low power loss. This study aims to enhance the electromagnetic performance of NiCuZn ferrite by co-doping Nb5+ and Li+. The influence of the doping levels Nb5+ and Li + on the morphology, crystal structure, and electromagnetic properties of NiCuZn ferrite were studied in detail. Structural analysis shows that the lattice constant decreases as the Nb5+-Li+ doping concentration increases, and the NiCuZn ferrite exhibits a high density and homogeneous microscopic morphology at the optimum concentration of x = 0.004. Specifically, at a doping concentration of x = 0.004, the magnetic permeability at 1 MHz measured at 1112.1, the saturation magnetic induction intensity reached 458.98 mT, and the power loss was minimized to 521.85 kW/m3, demonstrating significant improvement in the transmission power of wireless charging applications.

Thermal stability of dielectric properties of Dy-doped BaTiO3 for application in the ultra-thin multilayer ceramic capacitors

Rare earth elements are usually used to improve the performance of multilayer ceramic capacitors (MLCC), because their unique chemical and physical properties. Exploring the optimal method of rare earth doping is crucial to address the current performance deficiencies of MLCC. In this study, three samples with different doping levels of Dy and Ho selected to investigate the microstructure, dielectric performance, and reliability. Compared to the co-doping of Dy and Ho, excessive Dy doping exhibited better defect structure, resulting in smoother and more stable temperature coefficient of capacitance (TCC) curves and stronger suppression of oxygen vacancies. As the increase of Dy doping content, the activation energy of oxygen vacancies increased from 59.98 V/μm to 86.79 V/μm. This indicates that appropriate Dy doping has a superior effect on improving MLCC performance compared to co-doping systems. This work validates the complex defect structure induced by Dy doping and its improvement effect on MLCC performance, demonstrating the significant potential of Dy-doped MLCC.

Understanding Spin-Orbit-Coupling-Induced Reverse Intersystem Crossing in DMAC-TRZ-Doped Organic Light-Emitting Diodes via Magnetic-Field-Effect Measurement.

An efficient reverse intersystem crossing (RISC) process in thermally activated delayed fluorescence (TADF) material is a common way to obtain high-performance organic light-emitting diodes (OLEDs), but the physical mechanism for the spin flipping of the RISC remains vague. Here, using magneto-electroluminescence (MEL) as an effective tool, we found that the RISC (CT3 → CT1) from a triplet charge transfer (CT3) to the singlet charge transfer (CT1) state is decided by spin-orbit coupling (SOC) in metal-free OLEDs based on a typical TADF emitter DMAC-TRZ. By fitting and analyzing the current and concentration-dependent MEL data, it is found that the characteristic magnetic field of the SOC-induced RISC process is approximately 65-85 mT, which is obviously larger than that (several mT) of the hyperfine-interaction-induced RISC process. Simultaneously, the dissociation effect of the electric field on the CT3 state causes the SOC-induced RISC process to decrease with increasing bias current. The different formation methods of excited states lead to the nonmonotonic change of SOC-induced RISC process with the increase of dopant concentration. Furthermore, considering the orbital polarization of dipoles, the SOC mechanism is further verified by the measurement of magneto-photoluminescence to be the responsible for achieving the spin flipping in TADF molecules. Therefore, this work clarifies the underlying dynamic mechanism of the RISC process in TADF-OLEDs.

Study on the Effect of Ce Doping Concentration on the Kinetics of Graphene Formation

The thermodynamic and kinetic processes of Ce-doped graphene were simulated by the method of first-principles molecular dynamics. The structural optimization and annealing, the kinetic properties of Ce-doped graphene composites were calculated by the classical mechanics Forcite module. The results show that with the increase of Ce doping concentration, the order of the radial distribution function in the system increases and presents a state of aggregation. According to the analysis of mean azimuth shift function, the mean square displacement (MSD) value of Ce doped graphene composite increases with the increase of doping concentration, and the corresponding diffusion coefficient also increases. The research of gyration radius and gyration evolution radius shows that with the increase of temperature and doping concentration, the gyration evolution radius of atoms becomes shorter and shorter, indicating that the interatomic force in the system is enhanced and the range of activity is shortened. Combined with the analysis of local cluster structure, it can be seen that the maximum cluster size and number of Ce doped graphene composites do not change significantly with the increase of doping concentration, indicating that Ce atom doping will improve the order in the system, increase the diffusion coefficient and enhance the interaction force between atoms. The paper aims to reduce the error between the theoretical properties and the actual properties, and provide a theoretical basis for the development of new materials with excellent properties.

Cr–Sc co-substituted nickel-cobalt nanospinel ferrites: An investigation of their structural, magnetic properties and hyperfine interactions

The chromium and scandium co-substituted nickel-cobalt nanospinel ferrites (NSFs) having general formula of Co0.5Ni0.5ScxCrxFe2-2xO4 (CoNiScCr) (x ≤ 0.10) have been fabricated through the sol-gel route and citric acid as fuel and characterized by X-ray diffractometry (XRD), 57Fe Mössbauer spectroscopy, vibrating sample magnetometry (VSM), and finally by scanning and transmission electron microscopy techniques (SEM and TEM, respectively). The crystallite size (Dmax) values of the products were estimated to lay between 31 and 46 nm, which was calculated by the Scherrer formula. It was observed that the doping ions’ concentration did not have a linear impact on the expansion of the lattice constant. SEM and TEM present the cubic shape of CoNiScCr NSFs. All ratios demonstrate highly agglomerated cubic particles with diverse sizes. Both XRD and EDX (Energy Dispersive X-ray Spectroscopy) analyses confirmed the absence of any impurity/phases. Through an analysis of hysteresis loops at 300 (RT = room temperature) and 20 K, along with a probe of temperature-induced alteration in magnetization M, the magnetic properties of CoNiScCr (x ≤ 0.10) NSFs have been thoroughly investigated. Notably, all products exhibited complementary soft and hard magnetic behaviors at RT and 20 K, respectively. At 20 K, the observation of squareness ratio values surpassing 0.5 exhibits a single-domain behavior at this specific temperature. Magnetic parameters, in general, exhibit fluctuations with increasing doping content. Across the entire range of materials studied, a notable trend emerges as the temperature decreases, the magnetization in the zero field cooling curves shows a non-linear decrease, eventually stabilizing in the field cooling branches. The findings suggest that the inclusion of Sc3+/Cr3+ dopants can be utilized to manipulate and achieve desired magnetic properties in Co–Ni ferrites. The spectra of Mössbauer analysis, which was utilized to establish the distribution of cations, presented four magnetic sextets for all samples. Doped ions are substituted with Fe3+ ions at the B site.

Exploration of laser-assisted chemical bath for enhancing synthesis of undoped and nickel-doped zinc oxide and its potential applications in water purification and mitigating antimicrobial resistance

This study aims to explore the antimicrobial and photocatalytic efficiencies of pure and Ni-doped ZnO nanostructures produced via Laser-assisted Chemical Bath Synthesis (LACBS) to develop sustainable solutions for water treatment and pathogen control amid the global water crisis exacerbated by climate change and environmental pollution. Utilizing zinc acetate dihydrate and hexamethylenetetramine, the nanostructures were synthesized with Ni doping levels of 0.0 %, 1.5 %, 3.0 %, and 4.5 %, targeting their promising photocatalytic and antimicrobial properties to combat contaminants from pharmaceuticals, agriculture, and industries. Morphological analyses using Scanning Electron Microscopy showed a transition from hexagonal particles to nanoflowers, enhancing photocatalytic activity due to increased surface-to-volume ratio. X-ray Diffraction confirmed the hexagonal wurtzite structure, with variations in peak intensities indicating improved crystallinity with Ni doping. Energy Dispersive X-ray analysis verified the purity and successful incorporation of Ni. Photocatalytic assessments indicated up to 99.24 % degradation of Methylene Orange dye under blue laser irradiation within 60 minutes, correlating with Ni content. Antimicrobial tests demonstrated effective inhibition of pathogens such as Escherichia coli, Staphylococcus aureus, and additional strains like Candida albicans and Klebsiella pneumonia, with increasing zones of inhibition corresponding to higher Ni levels, extending up to 37 mm. The results underscore the dual functionality of ZnO nanostructures for applications in sustainable water treatment and antimicrobial controls, highlighting the need for future studies to examine the impacts of further increased doping concentrations on the material properties and efficacy.

Prospect for detecting magnetism in two-dimensional perovskite oxides by electron magnetic circular dichroism

Two-dimensional (2D) magnets, especially strongly correlated 2D transition-metal perovskite oxides, have attracted significant attention due to their intriguing electromagnetic properties for potential applications in spintronic devices. Potentially electron magnetic circular dichroism (EMCD) under zone axis conditions can provide three-dimensional components of magnetic moments in 2D materials, but the collection efficiency and the signal-to-noise ratio for out-of-plane (OOP) components is limited due to the limited collection angle. Here we conducted a comprehensive computational simulation to optimize the experimental setting of EMCD for detecting the OOP components of magnetic moments in three beam conditions (3BCs) on 2D perovskite oxides La1-xSrxMnO3 (LSMO) in a TEM. The key parameters are sample thickness, accelerating voltage, Sr doping concentration, collection semi-angle and position, and sample orientation including systematic reflections excited and tilt angle. Our simulation results demonstrate that the relative dynamical diffraction coefficients of Mn OOP EMCD of LaMnO3 with a thickness ranging from 1 unit cell (uc) to 4 uc can be optimized in a 3BC with (110) systematic reflections excited and a relatively large collection semi-angle of 19 mrad at the relatively low accelerating voltage of 80 kV. In most cases, the relative dynamic diffraction coefficients for La1-xSrxMnO3 with the thickness ranging from 1 uc to 4 uc decrease with the increase of the Sr doping concentrations. The optimal tilt angle from a zone axis to a 3BC is 18° for the cases of the LSMO thickness of 2 uc, 3 uc and 4 uc, and 22° for the monolayer LSMO. Our work provides the theoretical simulation foundation for optimized EMCD experiments for measuring OOP components of magnetic moments in 2D transition-metal perovskite oxides.

Solar light driven enhanced in photocatalytic activity of novel Gd incorporated ZnO/SnO2 heterogeneous nanocomposites

The Gd-doped ZnO/SnO2 nanocomposites with various atomic percentages (0, 0.5, 0.8, and 1.2 at%) of gadolinium (coded as GdZS0, GdZS1, GdZS2, and GdZS3) was synthesis via the sol–gel method and explored for photodegradation against dye solutions exposing solar light irradiation. The synthesized nanocomposites were characterized employing the XRD, FTIR, FE-SEM, Raman spectroscopy, BET analysis and UV–Vis spectrophotometer. The FE-SEM results indicated that the formation of nanoparticles to nanoflowers covered with Gd ions was observed with an increased doping concentration of Gd. The optical bandgap was evaluated and found in the range of 3.21–3.27 eV for GdZS nanocomposites. The GdZS nano-photocatalysts were investigated against the degradation of different organic dyes and GdZS3 shows the highest degradation efficiencies of 99.3%, 98.3% and 99.4% towards MO, MB and RhB dyes, respectively at neutral pH in aqueous media. Before and after photodegradation. Biological oxygen demand and chemical oxygen demand tests to make estimations of mineralization. The investigations are very promising for the degradation process in rare earth doped metal oxide nanocomposites. A plausible photodegradation mechanism of synthesized nanocomposites under investigation has also been proposed.

Synthesis, optimization, electrochemical and electrochromic properties of Zr-doped NiO films by chemical spray pyrolysis

Zirconium (Zr)-doped NiO films with different contents were successfully synthesized via the chemical spray pyrolysis technique. The structure, morphology, optical and electrochemical behaviors of these films were investigated by X-ray diffraction (XRD), Raman spectrometer, scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), UV–Vis-NIR spectrophotometry, cyclic voltammetry (CV), and chronoamperometry (CA). XRD results suggested that the synthesized samples have the cubic crystal structure and a preferred orientation along the plane (111). Raman spectra further confirmed the successful incorporation of zirconium ions into the NiO films. SEM images explained that the surfaces of the doped films were composed of uniform and dense nanoparticles. EDS analysis suggested that Zr, Ni and O elements were uniformly distributed on the films. The optical results showed that the band gap decreases from 3.53 eV to 3.47 eV as the increase of zirconium doping content. The electrochemical analysis suggested that zirconium doping improved the specific capacitance of the NiO films (the NiO film with the Zr amount of 7 %, 59 F/g at 6 mV/s). In addition, the NiO film with 5 % Zr doped amount exhibited the largest ΔOD (81 %), the largest CE (60.37 cm2/C), and the fastest coloring time (tc =2.1 s) and bleaching time (tb = 2.4 s). These results showed that this film had the excellent electrochromic properties, suggesting that the optimal Zr doped amount of NiO films is 5 %. As a novel kind of electrochromic material, the Zr-doped NiO film has broad application prospects in smart windows, green buildings and energy efficient utilization fields.

Enhanced transport anisotropy of Bi film through carrier mobility modulation controlled by calcium metal

Ca-doped Bi films were fabricated on the glass substrate using the molecular beam epitaxy (MBE). The systematic evolution for the preferred orientation, transport properties and surface morphology of Bi films were observed in the change of doping content. The measurement results show the adjustability of the preferred orientated surface morphology and Bi film carrier mobility. As the doping content increases, the mobility ratio four-fold and increases the anisotropy. Transport measurement simplifies the characteristic analysis of topological quantum materials. This work controls the material quantum property by doping Ca using MBE, which extends the potential application of quantum anomalous Hall effect-based devices.

Mechanical properties and multi-field ferroelastic response of Nb/Mn Co-doped CaBi4Ti4O15 high-temperature ferroelectric ceramics

CaBi4Ti4O15 (CBT) ceramics are promising piezoelectric materials that have been widely studied for high-temperature applications. Despite significant advancements in the electrical performance of CBT ceramics, the understanding of their mechanical behaviors remains limited, which is unfavorable for designing ceramics with high stability and reliability during high-temperature service. This work investigated the mechanical properties and fracture behaviors of Nb/Mn co-doped CaBi4Ti4O15 (CBTNM) with various doping levels, focusing on stress-strain responses and ferroelastic deformation behaviors under uniaxial compression and multi-field coupling conditions. HRTEM analysis reveals small-scale layered domain wall structures on the surface of plate-like grains. The fracture and compressive strengths of CBTNM ceramics initially decrease and then increase with an increase in doping content, and the underlying mechanisms are related to grain size, defects, and densification. CBTNM ceramics exhibit nonlinear stress-strain responses due to ferroelastic deformation under compressive loading, and the resultant irreversible domain switching strain increases with an increase in doping content, while poling can further increase the residual strain. Under multi-field loading conditions, CBTNM ceramics undergo more ferroelastic deformation events and exhibit larger residual strain. The micro-cracks, pores, complicated fracture modes, and degraded fracture surfaces with fragmental and rough features are mainly responsible for the lower elastic modulus and inferior mechanical response. This work enhances our understanding of the mechanical behaviors of high-temperature piezoelectric ceramics and provides guidance for designing high-performance piezoelectric materials for complex environmental applications.