In2O3 Nanowires Research Articles

Low power consumption gas sensor based on In2O3 nanowires in detecting hazardous gases

Low power consumption gas sensor based on In2O3 nanowires in detecting hazardous gases

In-depth investigation on the self-catalyzed growth of W2N/In2O3 composite nanowires synthesized via nitrogen plasma assisted in-situ thermal annealing for boosting photoelectrochemical performance

Enhancing the charge separation efficiency through interface engineering of In2O3-based photoanodes represents a critical and complex research endeavor in the field of water splitting. Herein, we report a self-catalyzed growth of intrinsic Indium oxide (In2O3) Nanowires (NWs) and Tungsten nitride/Indium oxide (W2N/In2O3) composite nanowires (CNWs) on c-Si substrates by plasma assisted reactive thermal evaporation (PARTE) and nitrogen plasma assisted in-situ thermal annealing, respectively. The nitrogen plasma assisted in-situ thermal annealing effectively transforms the intrinsic In2O3 NWs to W2N/In2O3 CNWs. The optical energy gap, Eg gradually decreases from 2.49 to 2.40 eV when combine with W2N nanostructures. Decrease in the Eg simultaneously increases the photocurrent density of W2N/In2O3 CNWs at V = 0.4 V from 1.9 to 3.8 mA/cm2. This could attribute to the effective electron−hole separations at the interfaces of the heterojunction CNWs. The correlation between the substantially prolonged lifetime of charge carriers and narrowing the bandgap of the composite NWs could be feasible as a good electrochemical electrode. Moreover, the self-catalyzed and secondary growth mechanisms of hierarchically branched In2O3 NWs and W2N/In2O3 CNWs are discussed.

Controlled Growth of Indium Oxide Nanowires for Gas Sensing Application.

The In2O3 nanowires have attracted enormous attention for gas sensor application due to their advantageous features. However, the controlled synthesis of In2O3 nanowires for gas sensors is vital and challenging because the gas sensing performance of the nanowires is strongly dependent on their characteristics. Here in this patent, we fabricated In2O3 nanowires on SiO2/Si substrate via a simple thermal vapor deposition method with the Au thin film as the catalyst. The growth temperatures were controlled to obtain desired nanowires of small size. The grown In2O3 nanowires were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction. The ethanol gas sensing properties were tested under the dynamic flow of dry air and analytic gas. The synthesized In2O3 nanowires have the potential for use in ethanol gas sensor application. In2O3 nanostructures grown at different temperatures ranging from 600 to 900oC have different morphologies. The sample grown at 600oC had a morphology of nanowire, with a diameter of approximately 80 nm and a length of few micrometers. Nanowires grown at 600°C were composed of oxygen (O) and indium (In) elements, with the atomic ratio of [O]/[In] = 3/5. The nanowire was a single phase cubic structure of In2O3 crystal. The In2O3 nanowire sensor showed typical n-type semiconducting sensing properties. The response decreased from 130 to 75 at 100 ppm when the working temperature decreased from 450°C to 350°C. The nanowires grown at 600°C by the thermal vapor deposition method had the best morphology with a small diameter of about 80 nm and a length of few micrometers. The In2O3 nanowires had a good ability to sense ethanol at varying concentrations in the range of 20 ppm to 100 ppm. The In2O3 nanowires can be used as building blocks for future nanoscale gas sensors.

Mechanisms behind combustion chemistry in low-temperature solution process of nanomaterials

Combustion synthesis has been widely used for low-temperature growth of metal-oxides nanomaterials. However, the mechanism behind its effectiveness remains unclear, because the current thermal analysis tools require the sample mass beyond 10 mg hardly achieved for nanomaterials. In this study, electrospinning was employed to fabricate massive In2O3 nanowires network films that enables directly study the thermal behaviours of combustion in nanomaterials via thermal analysis tools. We compared the thermal behaviours of electrospun nanomaterials and bulk materials with/without combustion. In the absence of combustion reaction in both, the nanowires shows a lower decomposition temperature than the bulk (500 versus 570 °C). In the presence of combustion reaction in both, it shows even lower decomposition temperature than the bulk (430 versus 500 °C). These indicate that combustion synthesis has two-fold mechanisms: first, it indeed provides internal thermal energy through combustion reaction for crystallizing the nanowires; second, the large surface area of the nanowires promotes the gases transport, which in turn accelerate the decomposition of organics in the nanowires. Based upon both mechanisms, a field effect transistor made of In2O3 nanowires network film was fabricated at 400 °C, whose Ion/Ioff reaches up to 105 with an Ion of 6 × 10−5 A.

Mesoporous Co3O4/In2O3 nanocomposites for formaldehyde gas sensors: Synthesis from ZIF-67 and gas-sensing behavior

Mesoporous In2O3 nanowires (NWs) were synthesized with nanocasting method, and then Co3O4/In2O3 nanocomposites were prepared through calcining ZIF-67. All results indicate that Co3O4 nanoparticles greatly affect the microstructures and gas-sensing properties of Co3O4/In2O3 sensors. The response to 10 ppm (formaldehyde) HCHO gas exhibits a significant improvement though the loading of Co3O4. The response values soar from 26.16 for In2O3 NWs to 92.94 for 6%Co3O4/In2O3 and up to maximum 113.6 for 8% Co3O4/In2O3, then decreases to 25.76 for 10% Co3O4/In2O3. 8% Co3O4/In2O3 sensor possesses the excellent HCHO gas-sensing performance with the highest response (113.6) and shortest response time of 20 s. The working temperature of Co3O4/In2O3 sensors is 30 °C lower than that of In2O3 sensor due to Co3O4 catalysis. P-n heterojunctions between p-type Co3O4 and n-type In2O3 affect the interfacial carrier distribution, improving the gas-sensing behavior of Co3O4/In2O3 sensors. Furthermore, oxygen vacancies also play a important role to improve the gas-sensing performance of Co3O4/In2O3 sensors.

Controlled Synthesis and Enhanced Gas Sensing Performance of Zinc-Doped Indium Oxide Nanowires.

Indium oxide (In2O3) is a widely used n-type semiconductor for detection of pollutant gases; however, its gas selectivity and sensitivity have been suboptimal in previous studies. In this work, zinc-doped indium oxide nanowires with appropriate morphologies and high crystallinity were synthesized using chemical vapor deposition (CVD). An accurate method for electrical measurement was attained using a single nanowire microdevice, showing that electrical resistivity increased after doping with zinc. This is attributed to the lower valence of the dopant, which acts as an acceptor, leading to the decrease in electrical conductivity. X-ray photoelectron spectroscopy (XPS) analysis confirms the increased oxygen vacancies due to doping a suitable number of atoms, which altered oxygen adsorption on the nanowires and contributed to improved gas sensing performance. The sensing performance was evaluated using reducing gases, including carbon monoxide, acetone, and ethanol. Overall, the response of the doped nanowires was found to be higher than that of undoped nanowires at a low concentration (5 ppm) and low operating temperatures. At 300 °C, the gas sensing response of zinc-doped In2O3 nanowires was 13 times higher than that of undoped In2O3 nanowires. The study concludes that higher zinc doping concentration in In2O3 nanowires improves gas sensing properties by increasing oxygen vacancies after doping and enhancing gas molecule adsorption. With better response to reducing gases, zinc-doped In2O3 nanowires will be applicable in environmental detection and life science.

Multi-dimensional dynamic fluorescence readout from laser engineered In2O3 nanowire micropatterns

A laser-irradiated array of In2O3 nanowires presents yellow and blue fluorescence states that can be dynamically altered under UV light for anti-counterfeiting features based upon microscale patterning, color evolution and time-domain encoding.

Facile fabrication of NiO foam@Sn-doped In2O3 nanowire heterosturctures for highly sensitive ethylene glycol gas sensors at low temperatures

Ethylene glycol is odorless and harmful to human beings. However, the high operating temperature and the low gas response of the ethylene glycol sensors limit their wide applications. Herein, p-type nickel oxide foam/ n-type tin-doped indium oxide nanowires composite (NTO) has been fabricated for ethylene glycol gas sensing. The NTO composite was prepared by complete oxidation of Ni foam at high temperature, then Sn-doped indium oxide (ITO) nanowires were grown on NiO foam by chemical vapor deposition. The assembled NTO sensor exhibits a unique response (Rg/Ra=160.72) to 100 ppm ethylene glycol at a low temperature of 125 ℃, and a fast response/ recovery time (8.7 s/ 19.3 s). This excellent gas-sensitive performance of NTO sensors can be attributed to the formation of p/n heterojunctions and the In and Sn doping of NiO during ITO growth. This fabrication method provides an effective strategy for building NiO-based heterostructures for high-performance gas sensors.

Synthesis and mesoporous-structures of indium oxide nanowires for high sensitivity formaldehyde gas sensor

Mesoporous indium oxide nanowires (In2O3 NWs) were synthesized using ordered mesoporous SBA-15 silica as hard templates with nanocasting method, and then the bundled In2O3 nanowires (In2O3 BNWs) were separated from the dispersed In2O3 nanowires (In2O3 DNWs) by centrifugation technique. From the characterization with XRD, SEM, TEM, UV–vis spectra and nitrogen adsorption-desorption isotherm, both samples present the same mesoporous-structures, diameter and the similar defects due to the same synthesis conditions. The specific surface area (57.37 m2/g) of In2O3 BNWs are higher than that of In2O3 DNWs for the better mesoporous-structures. In2O3 BNWs with the smaller grain size and higher surface area absorb more oxygen in air and increase the thickness of electron depletion layer, leading to the larger change of resistance in air. Therefore, In2O3 BNWs sensor presents the better sensitivity (26.16) to formaldehyde than In2O3 DNWs sensor at optimized operating temperature owing to the high surface area and small grain size.

A novel design and fabrication of self-heated In2O3 nanowire gas sensor on glass for ethanol detection

Many attempts have been made on the design and fabrication of low-power consumption gas sensor for application on the Internet of Things and portable devices. The performance of gas sensors includes sensitivity, selectivity, and power consumption, which are strongly dependent on the configuration of the device such as the gap size between two electrodes, the sensing material, and operation principle. Here, self-heated In2O3 nanowire-based gas sensors were designed and fabricated by on-chip growth technique via thermal evaporation to work at room temperature. The effect of electrode gap (10–40 µm) on the power consumption and gas sensing performance of the In2O3 nanowire sensors was studied. With the large gap of 40 µm, the sensor exhibited excellent sensing characteristics of low power consumption (1.06 mW) with ability to detect ethanol gas down to 20 ppm effectively. We also examined the role of nanowire conductivity in the performance of the self-heated sensor in the detection of reducing gas. The sensor demonstrated rapid response and recovery times of less than a minute, exceptional stability, and remarkable recovery.

Sensitivity enhancement of In2O3/ZrO2 composite based acetone gas sensor: A promising collaborative approach of ZrO2 as the heterojunction and dopant for in-situ grown octahedron-like particles

In the present work, the chemo-resistive acetone sensor based on n-n heterojunction was designed and fabricated by incorporating ZrO2 into one-dimensional In2O3 nanowires (NWs). The In2O3/ZrO2 (IZO) nanowires were synthesized via a facile electrospinning strategy followed by calcination. Interestingly, some in-situ grown octahedral-like particles appears on the surface of nanowires. It is observed that the In2O3/ZrO2 heterojunction exhibits a comparatively better response for 100-ppm acetone gas with a short response time of ~1 s at the operating temperature of 260 °C. The maximum sensitivity is obtained by optimizing the doping In/Zr molar ratio. Furthermore, several considerations are discussed to evaluate the sensitivity, selectivity, long-term stability (“3 S”), and repeatability. Overall, this work not only reveals the role of ZrO2 in the generation and resistance modulation of the n-n heterojunction but also provides a unique perspective on using ZrO2 to modulate lattice spacing to construct in-situ grown octahedral-like particles on In2O3 nanowires, thereby providing valuable guidance for optimizing the sensing performance of the In2O3 based composite sensors for sub-ppm-level acetone gas.

A Novel Design and Fabrication of Self-Heated In2o3 Nanowire Gas Sensor on Glass for Ethanol Detection

A Novel Design and Fabrication of Self-Heated In2o3 Nanowire Gas Sensor on Glass for Ethanol Detection

Excellent gas-sensitive properties towards acetone of In2O3 nanowires prepared by electrospinning

In2O3 nanowires (NWs) were successfully synthesized by electrospinning. The crystalline phase, microstructure, morphology, elemental composition, and BET surface area were analyzed XRD, SEM, TEM, XPS, and nitrogen adsorption. The characterization of the In2O3 NWs showed that In2O3 NWs were uniform thickness, structural integrity, and high purity. In subsequent gas-sensitive tests, the effects of PVP percentage, calcination temperature, calcination ramp-up rate, and calcination time on sensitive properties were analyzed. In particular, the In2O3 sensor showed a response of up to 37.9 (Ra/Rg) to 100 ppm acetone at an operating temperature of 200 °C and the response/recovery time is 1 s/7 s. The gas-sensitive mechanism of the In2O3 sensor was also analyzed in conjunction with the characterization results. Our study shows that the response of the In2O3 sensor is improved compared to the previously published sensors.

Fabrication, Characterization and Performance of Low Power Gas Sensors Based on (GaxIn1-x)2O3Nanowires.

Active research in nanostructured materials aims to explore new paths for improving electronic device characteristics. In the field of gas sensors, those based on metal oxide single nanowires exhibit excellent sensitivity and can operate at extremely low power consumption, making them a highly promising candidate for a novel generation of portable devices. The mix of two different metal oxides on the same nanowire can further broaden the response of this kind of gas sensor, thus widening the range of detectable gases, without compromising the properties related to the active region miniaturization. In this paper, a first study on the synthesis, characterization and gas sensing performance of (GaxIn1-x)2O3 nanowires (NWs) is reported. Carbothermal metal-assisted chemical vapor deposition was carried out with different mixtures of Ga2O3, In2O3 and graphite powders. Structural characterization of the NWs revealed that they have a crystalline structure close to that of In2O3 nanowires, with a small amount of Ga incorporation, which highly depends on the mass ratio between the two precursors. Dedicated gas nanosensors based on single NWs were fabricated and tested for both ethanol and nitrogen dioxide, demonstrating an improved performance compared to similar devices based on pure In2O3 or Ga2O3 NWs.

Robust Ultraviolet Photodetection by Tailored Polycrystalline In2O3 Nanowire Synthesized Using Glancing Angle Deposition

Perpendicular In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> nanowire (NW) arrays have been successfully synthesized using glancing angle deposition (GLAD) inside electron-beam evaporator on p-type Si substrate by tailoring the deposition rate and substrate rotation rate. The morphologies of as-deposited In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NWs structures are studied using field emission scanning electron microscope and transmission electron microscopy. The growth mechanisms of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NWs are studied. In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NW shows 1.5 times enhanced optical absorption in UV region compared to In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin film (TF). In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NW shows more photoluminescence emission due to the increase in active surface area to volume ratio compared to bulk TF. The In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NW shows low dark current conduction compared to In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> TF. In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NW shows ~ 50 time enhanced photosensitivity than that of In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> TF at -5 V under 340 nm UV-illumination. In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NW shows faster rise time (~0.6519 s) and fall time (~0.51 s) compared to In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> TF rise time (~1.519 s) and fall time (~0.543 s). In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NW shows excellent detectivity of 9.91×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> Jones and low noise equivalent power of 2.83×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-13</sup> W. Therefore, the remarkable optoelectronic properties attained with In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> NW will guarantee wider promising applications in electronic and optoelectronic devices.

High-performance room temperature NO2 gas sensor based on visible light irradiated In2O3 nanowires

A batch of In2O3 nanowires (NWs) samples were prepared through a simple electrospinning method and the following sintering procedure. The X-ray powder diffraction (XRD) analysis identified their high purity and crystallinity. Furthermore, the field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) revealed the high quality of the synthesized products. The nanowires were homogeneous and of uniform diameter. The X-ray photoelectron spectroscopy (XPS) data showed that the oxygen vacancies and surface chemisorbed oxygen species occupied a large proportion in the total oxygen content. O2-temperature-programmed desorption (TPD) experiments identified the affinity of oxygen to In2O3 nanowires´ surface at room temperature and concrete adsorbed oxygen species. The above results were positive signals of their gas-sensing performance. In the subsequent gas-sensing test, we found that the sensor based on In2O3 NWs exhibited a high selectivity toward NO2 under room temperature. What's more, the response of the sensor toward 5 ppm NO2 at 25 ℃ in dark could reach as high as 740 and its detection limit was as low as 10 ppb. However, like most reported literatures on low-temperature gas sensors, the In2O3 NWs sensor likewise had a significant defect of long recovery process. Fortunately, we successfully solved this defect through the introduction of visible light irradiation during the recovery process. We detailedly explored the relationship between the light intensity and wavelength and the recovery properties of the sensor. Based on an in-depth analysis on the above two parameters and O2-TPD data, we proposed two different action mechanisms of photons according to their energy difference when accelerating the recovery of the sensor.

Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\\In2O3:Er films.

RF magnetron-deposited Si\\In2O3:Er films have the structure of the single-crystalline bixbyite bcc In2O3 nanowires bunched into the columns extended across the films. The obtained films have a typical In2O3 optical band gap of 3.55 eV and demonstrate the 1.54 μm Er3+ room temperature photoluminescence. The current across the film flows inside the columns through the nanowires. The current through the MOS-structure with the intermediate low barrier In2O3:Er dielectric was investigated by the thermionic emission approach, with respect to the partial voltage drop in silicon. Schottky plots ln(I/T 2 ) versus 1/kT of forward currents at small biases and backward currents in saturation give the electron forward n-Si\\In2O3:Er barrier equal to 0.14 eV and the backward In\\In2O3:Er barrier equal to 0.21 eV.

Field-Effect Transistor Behavior of Synthesized In2O3/InP (100) Nanowires via the Vapor–Liquid–Solid Method

We demonstrated the feasibility of using InP (100) substrates, a different indium source, for the synthesis of In2O3 nanowires by the vapor–liquid–solid (VLS) method using a 20-nm-thick Au layer as a catalyst. By varying the thickness of the Au layer and the growth temperature (T), the nanowires showed different morphologies. The nanowires grew along the (100) direction and had perfect crystallinity and lengths up to several hundreds of micrometers. The configured field-effect transistor revealed an n-type behavior with 115 μA of the drain-source current, IDS, under 1.0 V of gate voltage, VDS, at 1.33 × 10−4 kPa of pressure and temperature of 20°C. This result indicates that it is feasible to use different In sources to synthesize In2O3 nanowires by the VLS method for electronic devices.

Surface-Plasmon-Induced Ag Nanoparticles Decorated In2O3 Nanowires for Low Noise Photodetectors

Silver (Ag) nanoparticles (NPs) were synthesized by glancing angle deposition (GLAD) technique on indium oxide (In2O3) nanowires (NWs) over n-type Si substrate. The In2O3 NWs and Ag NPs were morphologically characterized by field emission scanning electron microscopy (FESEM) and electron dispersive spectroscopy (EDS). The complete growth of In2O3 NWs was observed by high-resolution transmission electron microscopy (HRTEM) and corresponding selected area electron diffraction (SAED) pattern was also studied. The structural analysis was done by high-resolution X-ray diffraction (HRXRD), and relevant peaks were identified to calculate the crystalline size. The HRXRD patterns displayed the peak for Ag NPs and monoclinic crystal structure of Ag3O4. The optical properties were analyzed by photoluminescence (PL) emission spectrums. The presence of Ag NPs over In2O3 NWs reduced the PL intensity. Atomic force microscopy (AFM) was also studied to estimate the surface roughness for both the samples. The semi-logarithmic I-V (ln(I)-V) characteristics revealed the enhancement in photoconduction for the n-Si/In2O3 NWs/Ag NPs device at − 4.5 V using a 100-W tungsten filament source. The total ~ 2.6 fold enhancement in photosensitivity were recorded for the n-Si/In2O3 NWs/Ag NPs device at an applied voltage of − 2.4 V. This n-Si/In2O3 NWs/Ag NPs device possessed high detectivity and low noise equivalent power (NEP) as compared with the bare n-Si/In2O3 NWs device.

Boosted photoelectrochemical performance of In2O3 nanowires via modulating oxygen vacancies on crystal facets

Introducing oxygen vacancies into faceted metal oxide nanostructures will largely boost photoelectrochemical water splitting ability, but currently remains a huge challenge. Herein, a simple one-step chemical vapor deposition method is developed to effectively introduce oxygen vacancies into In2O3 nanowires with the active {001} facets exposed. Theoretical calculations reveal that the introduction of oxygen vacancies produces a new defect level as shallow donor and increases the states of density, thereby enhancing the visible light absorption and promoting the separation and transportation of photogenerated carrier of faceted In2O3 nanowires. The In2O3 nanowires grown at optimal condition yield the maximal photocurrent density of 1 mA/cm2 at 0.22 V versus Ag/AgCl with unity Faradic efficiency. The results demonstrate that introducing oxygen vacancies into faceted photoelectrodes is feasible for further promoting the photoelectrochemical performance. Moreover, the methodology can be extended to other practical optoelectronic devices such as solar cell and photodetectors.